Diodes Incorporated
SO 8

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ZXMHC3F381N8

30V SO8 Complementary enhancement mode MOSFET H-Bridge

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Description

This new generation complementary MOSFET H-Bridge features low on-resistance achievable with low gate drive.

Application(s)

  • DC Motor control
  • DC-AC Inverters

Product Specifications

Product Parameters

AEC Qualified No
Compliance (Only Automotive(Q) supports PPAP) Standard
Polarity 2N2P
ESD Diodes (Y|N) No
|VDS| (V) 30 V
|VGS| (±V) 20 ±V
|IDS| @TA = +25°C (A) 3.98, 3.36 A
PD @TA = +25°C (W) 0.87 W
RDS(ON)Max@ VGS(10V)(mΩ) 33, 55 mΩ
RDS(ON)Max@ VGS(4.5V)(mΩ) 60, 80 mΩ
QG Typ @ |VGS| = 10V (nC) 9, 12.7 nC
CISS Typ (pF) 430, 670 pF
CISS Condition @|VDS| (V) 15, 15 V

Related Content

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Technical Documents

Recommended Soldering Techniques

TN1.pdf

RoHS CofC