Diodes Incorporated
SOD123F

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SBR2U60S1F

2A SUPER BARRIER RECTIFIER SCHOTTKY

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Description

The SBR2U60S1F is a single rectifier packaged in SOD123F. Offering low VF, low power loss and high efficiency, this device is ideal for use in general rectification applications.

Feature(s)

  • Guard Ring Die Construction for Transient Protection
  • Low Power Loss, High Efficiency
  • Patented Interlocking Clip Design for High Surge Current Capacity
  • Qualified to AEC-Q101 Standards
  • Lead-Free Finish; RoHS Compliant
  • Halogen and Antimony Free. “Green” Device

Application(s)

  • Boost Diode
  • Blocking Diode
  • Blocking Dode

Product Specifications

Product Parameters

@ TerminalTemperature TT (ºC) -
AEC Qualified Yes
Compliance (Only Automotive supports PPAP) Standard
Configuration Single
Maximum Average Rectified Current IO (A) 2
Peak Repetitive Reverse Voltage VRRM (V) 60
Peak Forward Surge Current IFSM (A) 35
Forward VoltageDrop VF(V) 0.51
@ IF (A) 2
Maximum Reverse Current IR (μA) 150
@ VR (V) 60
Reverse Recovery Time trr (ns) 11
Total Capacitance CT (pF) 75

Related Content

Packages

Applications

Technical Documents

SPICE Model

Recommended Soldering Techniques

TN1.pdf

Product Change Notices (PCNs)

A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.

PCN # Issue Date Implementation Date Subject
PCN-2660 2024-03-13 2024-06-13 Qualification of Additional Wafer Source with Wafer Diameter and Mold Compound Changes for Select Discrete Products
PCN-2588 2022-06-01 2022-09-01 Qualification of Additional Clip Bonding, Lead Frame Structure (Matrix) and Mold Compound, and Qualification of Additional
Diodes Internal Assembly & Test Site (SSEC) for Select Discrete Products
PCN-2398 2019-05-21 2019-08-21 Transfer Assembly Lines to Eris Assembly Site (Plant 2) in Taoyuan, Taiwan from the Existing Assembly Site (Plant 1) in Taipei City, Taiwan for Select Discrete Products

FAQs

Related Application FAQs