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DLLFSD01LPH4

ULTRA LOW LEAKAGE SURFACE MOUNT FAST SWITCHING DIODE

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Description

Ultra low leakage fast switching diodes in an ultra small, low profile leadless surface mount package

Feature(s)

  • Fast Switching Speed, fast reverse recovery time.
  • Ultra-Low Reverse Leakage Current (~5nA @VR = 5V)
  • Very Low Capacitance (<1pF @ VR = 0V)

Application(s)

Mobile phones, battery-powered portable electronics

Product Specifications

Product Parameters

AEC Qualified No
Compliance (Only Automotive supports PPAP) Standard
Configuration Single
Polarity Unidirectional
Power Rating(mW) 350 mW
ESD Diodes (Y|N) No
Peak RepetitiveReverse VoltageVRRM (V) 80 V
Reverse RecoveryTime trr (ns) 4 ns
Maximum Average Rectifier Current IO (mA) 100 mA
Maximum Peak Forward Surge Current IFSM (A) 2 A
Forward Voltage Drop VF @ IF (mA) 0.62, 0.74, 0.94 mA
Maximum ReverseCurrent IR (µA) 0.01, 0.1, 0.2 µA
TotalCapacitance CT (pF) 0.5 pF
VF(V) Max @ IF=100mA 1
V(BR)R (V) Min @IR=100μA 80
Trr(ns) Max @ IF=IR=10 mA, Irr=0.1xIR, RL=100Ω 4
Maximum Reverse Current IR @ VR (V) 80 V
VF(V) Max @ IF=10mA 0.855
IR(uA) Max @ VR=80V 0.2
CT(pF) Max @ VR = 0V, f = 1MHz 2.5

Related Content

Packages

Technical Documents

Recommended Soldering Techniques

TN1.pdf

Product Change Notices (PCNs)

A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.

PCN # Issue Date Implementation Date Subject
PCN-2461 2020-05-08 2021-04-05 Phenitec Wafer Manufacturing Site Change, Additional Wafer Sources, Wafer Diameter Change, Additional Assembly and Test Site
PCN-2315 2018-03-09 2018-06-09 Qualification of Alternative Wafer Sources for Select Products Due to Closure of Diodes FabTech (KFAB) Facility