* DIODES INCORPORATED AND ITS AFFILIATED COMPANIES AND SUBSIDIARIES (COLLECTIVELY, "DIODES") * PROVIDE THESE SPICE MODELS AND DATA (COLLECTIVELY, THE "SM DATA") "AS IS" AND WITHOUT ANY * REPRESENTATIONS OR WARRANTIES, EXPRESS OR IMPLIED, INCLUDING ANY WARRANTY OF MERCHANTABILITY * OR FITNESS FOR A PARTICULAR PURPOSE, ANY WARRANTY ARISING FROM COURSE OF DEALING OR COURSE OF * PERFORMANCE, OR ANY WARRANTY THAT ACCESS TO OR OPERATION OF THE SM DATA WILL BE UNINTERRUPTED, * OR THAT THE SM DATA OR ANY SIMULATION USING THE SM DATA WILL BE ERROR FREE. TO THE MAXIMUM * EXTENT PERMITTED BY LAW, IN NO EVENT WILL DIODES BE LIABLE FOR ANY DIRECT OR INDIRECT, * SPECIAL, INCIDENTAL, PUNITIVE OR CONSEQUENTIAL DAMAGES ARISING OUT OF OR IN CONNECTION WITH * THE PRODUCTION OR USE OF SM DATA, HOWEVER CAUSED AND UNDER WHATEVER CAUSE OF ACTION OR THEORY * OF LIABILITY BROUGHT (INCLUDING, WITHOUT LIMITATION, UNDER ANY CONTRACT, NEGLIGENCE OR OTHER * TORT THEORY OF LIABILITY), EVEN IF DIODES HAS BEEN ADVISED OF THE POSSIBILITY OF SUCH DAMAGES, * AND DIODES' TOTAL LIABILITY (WHETHER IN CONTRACT, TORT OR OTHERWISE) WITH REGARD TO THE SM * DATA WILL NOT, IN THE AGGREGATE, EXCEED ANY SUMS PAID BY YOU TO DIODES FOR THE SM DATA. *************************************************************************************************************************************** *SRC=1N4001G;DI_1N4001G;Diodes;Si; 50.0V 1.00A 2.00us Diodes Inc. Glass Passivated Rectifier .MODEL DI_1N4001G D ( IS=65.4p RS=42.2m BV=50.0 IBV=5.00u + CJO=14.8p M=0.333 N=1.36 TT=2.88u ) *************************************************************************************************************************************** *************************************************************************************************************************************** *SRC=1N4002G;DI_1N4002G;Diodes;Si; 100V 1.00A 2.00us Diodes Inc. Glass Passivated Rectifier .MODEL DI_1N4002G D ( IS=65.4p RS=42.2m BV=100 IBV=5.00u + CJO=14.8p M=0.333 N=1.36 TT=2.88u ) *************************************************************************************************************************************** *************************************************************************************************************************************** *SRC=1N4003G;DI_1N4003G;Diodes;Si; 200V 1.00A 2.00us Diodes Inc. Glass Passivated Rectifier .MODEL DI_1N4003G D ( IS=65.4p RS=42.2m BV=200 IBV=5.00u + CJO=14.8p M=0.333 N=1.36 TT=2.88u ) *************************************************************************************************************************************** *************************************************************************************************************************************** *SRC=1N4004G;DI_1N4004G;Diodes;Si; 400V 1.00A 2.00us Diodes Inc. Glass Passivated Rectifier .MODEL DI_1N4004G D ( IS=65.4p RS=42.2m BV=400 IBV=5.00u + CJO=14.8p M=0.333 N=1.36 TT=2.88u ) *************************************************************************************************************************************** *************************************************************************************************************************************** *SRC=1N4005G;DI_1N4005G;Diodes;Si; 600V 1.00A 2.00us Diodes Inc. Glass Passivated Rectifier .MODEL DI_1N4005G D ( IS=65.4p RS=42.2m BV=600 IBV=5.00u + CJO=14.8p M=0.333 N=1.36 TT=2.88u ) *************************************************************************************************************************************** *************************************************************************************************************************************** *SRC=1N4006G;DI_1N4006G;Diodes;Si; 800V 1.00A 2.00us Diodes Inc. Glass Passivated Rectifier .MODEL DI_1N4006G D ( IS=65.4p RS=42.2m BV=800 IBV=5.00u + CJO=14.8p M=0.333 N=1.36 TT=2.88u ) *************************************************************************************************************************************** *************************************************************************************************************************************** *SRC=1N4007G;DI_1N4007G;Diodes;Si; 1.00kV 1.00A 2.00us Diodes Inc. Glass Passivated Rectifier .MODEL DI_1N4007G D ( IS=65.4p RS=42.2m BV=1.00k IBV=5.00u + CJO=14.8p M=0.333 N=1.36 TT=2.88u ) ************************************************************************************************************************************** *SRC=1N5817;DI_1N5817;Diodes;Si; 20.0V 1.00A 3.00us Diodes Inc. Schottky Barrier Rectifier .MODEL DI_1N5817 D ( IS=870u RS=81.3m BV=20.0 IBV=1.00m + CJO=203p M=0.333 N=1.81 TT=4.32u ) *SRC=1N5818;DI_1N5818;Diodes;Si; 30.0V 1.00A 3.00us Diodes Inc. Schottky Barrier Rectifier .MODEL DI_1N5818 D ( IS=263u RS=73.1m BV=30.0 IBV=1.00m + CJO=203p M=0.333 N=1.90 TT=4.32u ) *SRC=1N5819;DI_1N5819;Diodes;Si; 40.0V 1.00A 3.00us Diodes Inc. Schottky Barrier Rectifier .MODEL DI_1N5819 D ( IS=390n RS=0.115 BV=40.0 IBV=1.00m + CJO=203p M=0.333 N=1.70 TT=4.32u ) *SRC=1N5819HW;DI_1N5819HW;Diodes;Si; 40.0V 1.00A 5.00ns Diodes Inc. Schottky .MODEL DI_1N5819HW D ( IS=191u RS=42.0m BV=40.0 IBV=1.00m + CJO=239p M=0.333 N=1.70 TT=7.20n ) *SRC=ABS10A;DI_ABS10A;Diodes;Si; 1000V 1.0A 3.00us Diodes Inc. Bridge Rectifier -- for one element .MODEL DI_ABS10A D ( IS=3.47n RS=42.6m BV=1000 IBV=5.00u + CJO=25.2p M=0.333 N=1.70 TT=4.32u ) *SRC=B0520LW;DI_B0520LW;Diodes;Si; 20.0V 0.500A 5.00ns Diodes Inc. Schottky .MODEL DI_B0520LW D ( IS=195u RS=49.4m BV=20.0 IBV=250u + CJO=199p M=0.333 N=1.72 TT=7.20n ) *SRC=B0520WS;DI_B0520WS;Schottky rectifier *SIMULATOR=SIMETRIX *ORIGIN=DZSL_DPG_SU *DATE=7OCT2011 *VERSION=1 .MODEL B0520WS D ( IS=1.5u RS=0.16 ISR=3u BV=22.0 IBV=.5m + CJO=107p M=0.45 VJ=.38 N=0.907 TT=5.6n EG=.69 XTI=.3 TBV1=.0001 TRS1=.0048) .SIMULATOR DEFAULT *SRC=B0530W;DI_B0530W;Diodes;Si; 30.0V 0.500A 5.00ns Diodes Inc. Schottky .MODEL DI_B0530W D ( IS=47.4u RS=26.8m BV=30.0 IBV=130u + CJO=225p M=0.333 N=1.66 TT=7.20n ) *SRC=B0530WS;DI_B0530WS;Diodes;Si; 30.0V 0.500A 10.0ns Diodes Inc. Schottky .MODEL DI_B0530WS D ( IS=897u RS=72.9m BV=30.0 IBV=500u + CJO=79.6p M=0.333 N=2.85 TT=14.4n ) *SRC=B0540W;DI_B0540W;Diodes;Si; 40.0V 0.500A 10.0ns Diodes Inc. Schottky .MODEL DI_B0540W D ( IS=55.9p RS=0.125 BV=40.0 IBV=20.0u + CJO=225p M=0.333 N=0.700 TT=14.4n ) *B0540WS Spice Model v1.0 Last Revised 5/23/2018 Diodes Inc SUPER BARRIER RECTIFIER SIMULATOR=SPICE3 .MODEL DI_B0540WS D ( IS=520.0n RS=130.0m BV=50.00 IBV=10.00 + CJO=150.0p M=400.0m N=1.100 TT=11.65n EG=480.0m VJ=44.67m ) * (c) 2018 Diodes Incorporated * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Diodes "). They are supplied * free of charge by Diodes for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Taiwan Inc.7F.,No. 50,Min-Chuan Road,Hsin-Tien District,New Taipei City 23141, Taiwan *SRC=B1100;DI_B1100;Diodes;Si; 100V 1.00A 5.00ns Diodes Inc. Schottky .MODEL DI_B1100 D ( IS=89.3u RS=42.2m BV=100 IBV=500n + CJO=66.3p M=0.333 N=2.45 TT=7.20n ) *SRC=B1100B;DI_B1100B;Diodes;Si; 100V 1.00A 5.00ns Diodes Inc. Schottky .MODEL DI_B1100B D ( IS=89.3u RS=42.2m BV=100 IBV=500n + CJO=66.3p M=0.333 N=2.45 TT=7.20n ) *SRC=B1100LB;DI_B1100LB;Diodes;Si; 100V 1.00A 10.0ns Diodes Inc. Schottky .MODEL DI_B1100LB D ( IS=20.0n RS=24.7m BV=100 IBV=500n + CJO=225p M=0.333 N=1.22 TT=14.4n ) *SRC=B120;DI_B120;Diodes;Si; 20.0V 1.00A 5.00ns Diodes Inc. Schottky .MODEL DI_B120 D ( IS=39.6u RS=50.2m BV=20.0 IBV=500u + CJO=265p M=0.333 N=1.70 TT=7.20n ) *SRC=B120B;DI_B120B;Diodes;Si; 20.0V 1.00A 5.00ns Diodes Inc. Schottky .MODEL DI_B120B D ( IS=39.6u RS=50.2m BV=20.0 IBV=500u + CJO=265p M=0.333 N=1.70 TT=7.20n ) *SRC=B130;DI_B130;Diodes;Si; 30.0V 1.00A 5.00ns Diodes Inc. Schottky .MODEL DI_B130 D ( IS=39.6u RS=50.2m BV=30.0 IBV=500u + CJO=265p M=0.333 N=1.70 TT=7.20n ) *SRC=B130B;DI_B130B;Diodes;Si; 30.0V 1.00A 5.00ns Diodes Inc. Schottky .MODEL DI_B130B D ( IS=39.6u RS=50.2m BV=30.0 IBV=500u + CJO=265p M=0.333 N=1.70 TT=7.20n ) *SRC=B130L;DI_B130L;Diodes;Si; 30.0V 1.00A 5.00ns Diodes Inc. Schottky .MODEL DI_B130L D ( IS=188u RS=18.5m BV=30.0 IBV=1.00m + CJO=331p M=0.333 N=1.65 TT=7.20n ) *SRC=B130LAW;DI_B130LAW;Diodes;Si; 30.0V 1.00A 5.00ns Diodes Inc. Schottky .MODEL DI_B130LAW D ( IS=407u RS=75.5m BV=30.0 IBV=1.00m + CJO=119p M=0.333 N=1.70 TT=7.20n ) *SRC=B130LB;DI_B130LB;Diodes;Si; 30.0V 1.00A 10.0ns Diodes Inc. Schottky .MODEL DI_B130LB D ( IS=458u RS=28.0m BV=30.0 IBV=1.00m + CJO=159p M=0.333 N=1.70 TT=14.4n ) *SRC=B140;DI_B140;Diodes;Si; 40.0V 1.00A 5.00ns Diodes Inc. Schottky .MODEL DI_B140 D ( IS=39.6u RS=50.2m BV=40.0 IBV=500u + CJO=265p M=0.333 N=1.70 TT=7.20n ) *SRC=B140B;DI_B140B;Diodes;Si; 40.0V 1.00A 5.00ns Diodes Inc. Schottky .MODEL DI_B140B D ( IS=39.6u RS=50.2m BV=40.0 IBV=500u + CJO=265p M=0.333 N=1.70 TT=7.20n ) *SRC=B140HB;DI_B140HB;Diodes;Si; 40.0V 1.00A 10.0ns Diodes Inc. Schottky .MODEL DI_B140HB D ( IS=31.0u RS=42.1m BV=40.0 IBV=1.00m + CJO=159p M=0.333 N=1.70 TT=14.4n ) *SRC=B140HW;DI_B140HW;Diodes;Si; 40.0V 1.00A 11.0ns Diodes Incorporated Schottky diode .MODEL DI_B140HW D ( IS=123n RS=66.4m BV=40.0 IBV=40.0u + CJO=119p M=0.333 N=1.07 TT=15.8n ) *SRC=B150;DI_B150;Diodes;Si; 50.0V 1.00A 5.00ns Diodes Inc. Schottky .MODEL DI_B150 D ( IS=15.7u RS=42.0m BV=50.0 IBV=500u + CJO=133p M=0.333 N=1.70 TT=7.20n ) *SRC=B150B;DI_B150B;Diodes;Si; 50.0V 1.00A 5.00ns Diodes Inc. Schottky .MODEL DI_B150B D ( IS=15.7u RS=42.0m BV=50.0 IBV=500u + CJO=133p M=0.333 N=1.70 TT=7.20n ) *SRC=B160;DI_B160;Diodes;Si; 60.0V 1.00A 5.00ns Diodes Inc. Schottky .MODEL DI_B160 D ( IS=15.7u RS=42.0m BV=60.0 IBV=500u + CJO=133p M=0.333 N=1.70 TT=7.20n ) *SRC=B160B;DI_B160B;Diodes;Si; 60.0V 1.00A 5.00ns Diodes Inc. Schottky .MODEL DI_B160B D ( IS=15.7u RS=42.0m BV=60.0 IBV=500u + CJO=133p M=0.333 N=1.70 TT=7.20n ) *SRC=B170;DI_B170;Diodes;Si; 70.0V 1.00A 5.00ns Diodes Inc. Schottky .MODEL DI_B170 D ( IS=89.3u RS=42.2m BV=70.0 IBV=500n + CJO=66.3p M=0.333 N=2.45 TT=7.20n ) *SRC=B170B;DI_B170B;Diodes;Si; 70.0V 1.00A 5.00ns Diodes Inc. Schottky .MODEL DI_B170B D ( IS=89.3u RS=42.2m BV=70.0 IBV=500n + CJO=66.3p M=0.333 N=2.45 TT=7.20n ) *SRC=B180;DI_B180;Diodes;Si; 80.0V 1.00A 5.00ns Diodes Inc. Schottky .MODEL DI_B180 D ( IS=89.3u RS=42.2m BV=80.0 IBV=500n + CJO=66.3p M=0.333 N=2.45 TT=7.20n ) *SRC=B180B;DI_B180B;Diodes;Si; 80.0V 1.00A 5.00ns Diodes Inc. Schottky .MODEL DI_B180B D ( IS=89.3u RS=42.2m BV=80.0 IBV=500n + CJO=66.3p M=0.333 N=2.45 TT=7.20n ) *SRC=B190;DI_B190;Diodes;Si; 90.0V 1.00A 5.00ns Diodes Inc. Schottky .MODEL DI_B190 D ( IS=89.3u RS=42.2m BV=90.0 IBV=500n + CJO=66.3p M=0.333 N=2.45 TT=7.20n ) *SRC=B190B;DI_B190B;Diodes;Si; 90.0V 1.00A 5.00ns Diodes Inc. Schottky .MODEL DI_B190B D ( IS=89.3u RS=42.2m BV=90.0 IBV=500n + CJO=66.3p M=0.333 N=2.45 TT=7.20n ) *SRC=B2100;DI_B2100;Diodes;Si; 100.0V 2.00A 10.0ns Diodes Inc Schottky .MODEL DI_B2100 D ( IS=746u RS=21.0m BV=100.0 IBV=500u + CJO=179p M=0.333 N=2.87 TT=14.4n ) *SRC=B220;DI_B220;Diodes;Si; 20.0V 2.00A 1.00ns Diodes Inc. .MODEL DI_B220 D ( IS=7.98u RS=13.4m BV=20.0 IBV=500u + CJO=370p M=0.333 N=1.13 TT=1.44n ) *SRC=B220A;DI_B220A;Diodes;Si; 20.0V 2.00A 1.00ns Diodes Inc. .MODEL DI_B220A D ( IS=7.98u RS=13.4m BV=20.0 IBV=500u + CJO=370p M=0.333 N=1.13 TT=1.44n ) *SRC=B230;DI_B230;Diodes;Si; 30.0V 2.00A 1.00ns Diodes Inc. .MODEL DI_B230 D ( IS=7.98u RS=13.4m BV=30.0 IBV=500u + CJO=370p M=0.333 N=1.13 TT=1.44n ) *SRC=B230A;DI_B230A;Diodes;Si; 30.0V 2.00A 1.00ns Diodes Inc. .MODEL DI_B230A D ( IS=7.98u RS=13.4m BV=30.0 IBV=500u + CJO=370p M=0.333 N=1.13 TT=1.44n ) *SRC=B240;DI_B240;Diodes;Si; 40.0V 2.00A 1.00ns Diodes Inc. .MODEL DI_B240 D ( IS=7.98u RS=13.4m BV=40.0 IBV=500u + CJO=370p M=0.333 N=1.13 TT=1.44n ) *SRC=B240A;DI_B240A;Diodes;Si; 40.0V 2.00A 1.00ns Diodes Inc. .MODEL DI_B240A D ( IS=7.98u RS=13.4m BV=40.0 IBV=500u + CJO=370p M=0.333 N=1.13 TT=1.44n ) *SRC=B250;DI_B250;Diodes;Si; 50.0V 2.00A 1.00ns Diodes Inc. .MODEL DI_B250 D ( IS=6.08u RS=14.9m BV=50.0 IBV=500u + CJO=370p M=0.333 N=1.55 TT=1.44n ) *SRC=B250A;DI_B250A;Diodes;Si; 50.0V 2.00A 1.00ns Diodes Inc. .MODEL DI_B250A D ( IS=6.08u RS=14.9m BV=50.0 IBV=500u + CJO=370p M=0.333 N=1.55 TT=1.44n ) *SRC=B260;DI_B260;Diodes;Si; 60.0V 2.00A 1.00ns Diodes Inc. .MODEL DI_B260 D ( IS=6.08u RS=14.9m BV=60.0 IBV=500u + CJO=370p M=0.333 N=1.55 TT=1.44n ) *SRC=B260A;DI_B260A;Diodes;Si; 60.0V 2.00A 1.00ns Diodes Inc. .MODEL DI_B260A D ( IS=6.08u RS=14.9m BV=60.0 IBV=500u + CJO=370p M=0.333 N=1.55 TT=1.44n ) *SRC=B270;DI_B270;Diodes;Si; 70.0V 2.00A 10.0ns Diodes Inc Schottky .MODEL DI_B270 D ( IS=746u RS=21.0m BV=70.0 IBV=500u + CJO=179p M=0.333 N=2.87 TT=14.4n ) *SRC=B280;DI_B280;Diodes;Si; 80.0V 2.00A 10.0ns Diodes Inc Schottky .MODEL DI_B280 D ( IS=746u RS=21.0m BV=80.0 IBV=500u + CJO=179p M=0.333 N=2.87 TT=14.4n ) *SRC=B290;DI_B290;Diodes;Si; 90.0V 2.00A 10.0ns Diodes Inc Schottky .MODEL DI_B290 D ( IS=746u RS=21.0m BV=90.0 IBV=500u + CJO=179p M=0.333 N=2.87 TT=14.4n ) *SRC=B3100;DI_B3100;Diodes;Si; 100V 3.00A 10.0ns Diodes Inc. Schottky .MODEL DI_B3100 D ( IS=916u RS=14.1m BV=100 IBV=500u + CJO=159p M=0.333 N=3.04 TT=14.4n ) *SRC=B320;DI_B320;Diodes;Si; 30.0V 3.00A 5.00ns Diodes Inc. Schottky .MODEL DI_B320 D ( IS=9.90n RS=14.0m BV=30.0 IBV=500u + CJO=464p M=0.333 N=0.775 TT=7.20n ) *SRC=B320A;DI_B320A;Diodes;Si; 30.0V 3.00A 5.00ns Diodes Inc. Schottky .MODEL DI_B320A D ( IS=9.90n RS=14.0m BV=30.0 IBV=500u + CJO=464p M=0.333 N=0.775 TT=7.20n ) *SRC=B320B;DI_B320B;Diodes;Si; 30.0V 3.00A 5.00ns Diodes Inc. Schottky .MODEL DI_B320B D ( IS=9.90n RS=14.0m BV=30.0 IBV=500u + CJO=464p M=0.333 N=0.775 TT=7.20n ) *SRC=B330;DI_B330;Diodes;Si; 30.0V 3.00A 5.00ns Diodes Inc. Schottky .MODEL DI_B330 D ( IS=9.90n RS=14.0m BV=30.0 IBV=500u + CJO=464p M=0.333 N=0.775 TT=7.20n ) *SRC=B330A;DI_B330A;Diodes;Si; 30.0V 3.00A 5.00ns Diodes Inc. Schottky .MODEL DI_B330A D ( IS=9.90n RS=14.0m BV=30.0 IBV=500u + CJO=464p M=0.333 N=0.775 TT=7.20n ) *SRC=B330B;DI_B330B;Diodes;Si; 30.0V 3.00A 5.00ns Diodes Inc. Schottky .MODEL DI_B330B D ( IS=9.90n RS=14.0m BV=30.0 IBV=500u + CJO=464p M=0.333 N=0.775 TT=7.20n ) *SRC=B340;DI_B340;Diodes;Si; 40.0V 3.00A 5.00ns Diodes Inc. Schottky .MODEL DI_B340 D ( IS=9.90n RS=14.0m BV=40.0 IBV=500u + CJO=464p M=0.333 N=0.775 TT=7.20n ) *SRC=B340A;DI_B340A;Diodes;Si; 40.0V 3.00A 5.00ns Diodes Inc. Schottky .MODEL DI_B340A D ( IS=9.90n RS=14.0m BV=40.0 IBV=500u + CJO=464p M=0.333 N=0.775 TT=7.20n ) *SRC=B340B;DI_B340B;Diodes;Si; 40.0V 3.00A 5.00ns Diodes Inc. Schottky .MODEL DI_B340B D ( IS=9.90n RS=14.0m BV=40.0 IBV=500u + CJO=464p M=0.333 N=0.775 TT=7.20n ) *SRC=B340LA;DI_B340LA;Diodes;Si; 40.0V 3.00A 10.0ns Diodes Inc. Schottky .MODEL DI_B340LA D ( IS=1.15m RS=17.8m BV=40.0 IBV=2.00m + CJO=411p M=0.333 N=1.70 TT=14.4n ) *SRC=B340LB;DI_B340LB;Diodes;Si; 40.0V 3.00A 10.0ns Diodes Inc. Schottky .MODEL DI_B340LB D ( IS=1.15m RS=17.8m BV=40.0 IBV=2.00m + CJO=411p M=0.333 N=1.70 TT=14.4n ) *SRC=B350;DI_B350;Diodes;Si; 50.0V 3.00A 5.00ns Diodes Inc. Schottky .MODEL DI_B350 D ( IS=9.90n RS=14.0m BV=50.0 IBV=500u + CJO=464p M=0.333 N=0.775 TT=7.20n ) *SRC=B350A;DI_B350A;Diodes;Si; 50.0V 3.00A 5.00ns Diodes Inc. Schottky .MODEL DI_B350A D ( IS=9.90n RS=14.0m BV=50.0 IBV=500u + CJO=464p M=0.333 N=0.775 TT=7.20n ) *SRC=B350B;DI_B350B;Diodes;Si; 50.0V 3.00A 5.00ns Diodes Inc. Schottky .MODEL DI_B350B D ( IS=9.90n RS=14.0m BV=50.0 IBV=500u + CJO=464p M=0.333 N=0.775 TT=7.20n ) *SRC=B360;DI_B360;Diodes;Si; 60.0V 3.00A 5.00ns Diodes Inc. Schottky .MODEL DI_B360 D ( IS=9.90n RS=14.0m BV=60.0 IBV=500u + CJO=464p M=0.333 N=0.775 TT=7.20n ) *SRC=B360A;DI_B360A;Diodes;Si; 60.0V 3.00A 5.00ns Diodes Inc. Schottky .MODEL DI_B360A D ( IS=9.90n RS=14.0m BV=60.0 IBV=500u + CJO=464p M=0.333 N=0.775 TT=7.20n ) *B360AM-13-F Spice Model v1.0 Last Revised 7/29/2022 Diodes Inc SUPER BARRIER RECTIFIER SIMULATOR=SPICE3 .MODEL DI_B360AM-13-F D ( IS=763.8n RS=40.55m BV=70.00 IBV=10.00 + CJO=433.4p M=470.4m N=1.190 TT=9.984n EG=480.0m VJ=458.3m ) *SRC=B360B;DI_B360B;Diodes;Si; 60.0V 3.00A 5.00ns Diodes Inc. Schottky .MODEL DI_B360B D ( IS=9.90n RS=14.0m BV=60.0 IBV=500u + CJO=464p M=0.333 N=0.775 TT=7.20n ) *SRC=B370;DI_B370;Diodes;Si; 70.0V 3.00A 10.0ns Diodes Inc. Schottky .MODEL DI_B370 D ( IS=916u RS=14.1m BV=70.0 IBV=500u + CJO=159p M=0.333 N=3.04 TT=14.4n ) *SRC=B380;DI_B380;Diodes;Si; 80.0V 3.00A 10.0ns Diodes Inc. Schottky .MODEL DI_B380 D ( IS=916u RS=14.1m BV=80.0 IBV=500u + CJO=159p M=0.333 N=3.04 TT=14.4n ) *SRC=B390;DI_B390;Diodes;Si; 90.0V 3.00A 10.0ns Diodes Inc. Schottky .MODEL DI_B390 D ( IS=916u RS=14.1m BV=90.0 IBV=500u + CJO=159p M=0.333 N=3.04 TT=14.4n ) *SRC=B3L30LP;DI_B3L30LP;Diodes;Si; 30.0V 3.00A 15.0ns Diodes INC Schottky rectifier .MODEL DI_B3L30LP D ( IS=25.1u RS=12.5m BV=30.0 IBV=450u + CJO=517p M=0.333 N=1.03 TT=21.6n ) *SRC=B520C;DI_B520C;Diodes;Si; 20.0V 5.00A 5.00ns Diodes Inc. Schottky .MODEL DI_B520C D ( IS=617u RS=10.0m BV=20.0 IBV=500u + CJO=497p M=0.333 N=1.70 TT=7.20n ) *SRC=B530C;DI_B530C;Diodes;Si; 30.0V 5.00A 5.00ns Diodes Inc. Schottky .MODEL DI_B530C D ( IS=617u RS=10.0m BV=30.0 IBV=500u + CJO=497p M=0.333 N=1.70 TT=7.20n ) .LIB B540C * .MODEL B540C D ( +LEVEL = 1 IS = 1.5672e-06 RS = 0.0209949 +N = 1.01362 IBV = 0.0001 CJO = 8.98694e-10 +VJ = 0.396195 MJ = 0.457747 FC = 0.5 +XTI = 0.000352915 EG = 0.750278 TRS1 = 0.00406277 +TRS2 = 2.17553e-07 BV = 50 TT = 0 ) * .ENDL B540C *SRC=B550C;DI_B550C;Diodes;Si; 50.0V 5.00A 5.00ns Diodes Inc. Schottky .MODEL DI_B550C D ( IS=66.7u RS=14.1m BV=50.0 IBV=500u + CJO=497p M=0.333 N=1.70 TT=7.20n ) *SRC=B560C;DI_B560C;Diodes;Si; 60.0V 5.00A 5.00ns Diodes Inc. Schottky .MODEL DI_B560C D ( IS=66.7u RS=14.1m BV=60.0 IBV=500u + CJO=497p M=0.333 N=1.70 TT=7.20n ) *SRC=BAT1000;DI_BAT1000;Diodes;Si; 40.0V 1.00A 5.00ns Diodes Inc. Schottky Barrier Rectifier .MODEL DI_BAT1000 D ( IS=874n RS=65.3m BV=40.0 IBV=100u + CJO=175p M=0.333 N=0.823 TT=7.20n ) *SRC=BAT400D;DI_BAT400D;Diodes;Si; 40.0V 0.500A 5.00ns Diodes Inc. Schottky .MODEL DI_BAT400D D ( IS=1.80u RS=0.103 BV=40.0 IBV=50.0u + CJO=119p M=0.333 N=1.26 TT=7.20n ) *SRC=BAT750;DI_BAT750;Diodes;Si; 40.0V 0.750A 5.00ns Diodes Inc. Schottky .MODEL DI_BAT750 D ( IS=23.1u RS=82.3m BV=40.0 IBV=100u + CJO=225p M=0.333 N=1.16 TT=7.20n ) .MODEL BAT750 D IS=7E-6 N=0.99 RS=130E-3 IKF=0.15 XTI=2 EG=0.58 + CJO=184.9p M=0.523 VJ=0.3905 Fc=0.5 BV=60 IBV=300E-6 + ISR=4E-6 NR=1.8 * *SRC=BAT760;DI_BAT760;Diodes;Si; 30.0V 1.00A 10.0ns Diodes Inc. Schottky .MODEL DI_BAT760 D ( IS=10.6u RS=49.9m BV=30.0 IBV=50.0u + CJO=49.3p M=0.333 N=1.35 TT=14.4n ) *SRC=DF005M;DI_DF005M;Diodes;Si; 50.0V 1.00A 3.00us Diodes Inc. Bridge -- for one element .MODEL DI_DF005M D ( IS=4.42n RS=42.0m BV=50.0 IBV=10.0u + CJO=65.0p M=0.333 N=1.70 TT=4.32u ) *SRC=DF005S;DI_DF005S;Diodes;Si; 50.0V 1.00A 3.00us Diodes Inc. Bridge -- for one element .MODEL DI_DF005S D ( IS=4.42n RS=42.0m BV=50.0 IBV=10.0u + CJO=65.0p M=0.333 N=1.70 TT=4.32u ) *SRC=DF01M;DI_DF01M;Diodes;Si; 100V 1.00A 3.00us Diodes Inc. Bridge -- for one element .MODEL DI_DF01M D ( IS=4.42n RS=42.0m BV=100 IBV=10.0u + CJO=65.0p M=0.333 N=1.70 TT=4.32u ) *SRC=DF01S;DI_DF01S;Diodes;Si; 100V 1.00A 3.00us Diodes Inc. Bridge -- for one element .MODEL DI_DF01S D ( IS=4.42n RS=42.0m BV=100 IBV=10.0u + CJO=65.0p M=0.333 N=1.70 TT=4.32u ) *SRC=DF02M;DI_DF02M;Diodes;Si; 200V 1.00A 3.00us Diodes Inc. Bridge -- for one element .MODEL DI_DF02M D ( IS=4.42n RS=42.0m BV=200 IBV=10.0u + CJO=65.0p M=0.333 N=1.70 TT=4.32u ) *SRC=DF02S;DI_DF02S;Diodes;Si; 200V 1.00A 3.00us Diodes Inc. Bridge -- for one element .MODEL DI_DF02S D ( IS=4.42n RS=42.0m BV=200 IBV=10.0u + CJO=65.0p M=0.333 N=1.70 TT=4.32u ) *SRC=DF04M;DI_DF04M;Diodes;Si; 400V 1.00A 3.00us Diodes Inc. Bridge -- for one element .MODEL DI_DF04M D ( IS=4.42n RS=42.0m BV=400 IBV=10.0u + CJO=65.0p M=0.333 N=1.70 TT=4.32u ) *SRC=DF04S;DI_DF04S;Diodes;Si; 400V 1.00A 3.00us Diodes Inc. Bridge -- for one element .MODEL DI_DF04S D ( IS=4.42n RS=42.0m BV=400 IBV=10.0u + CJO=65.0p M=0.333 N=1.70 TT=4.32u ) *SRC=DF06M;DI_DF06M;Diodes;Si; 600V 1.00A 3.00us Diodes Inc. Bridge -- for one element .MODEL DI_DF06M D ( IS=4.42n RS=42.0m BV=600 IBV=10.0u + CJO=65.0p M=0.333 N=1.70 TT=4.32u ) *SRC=DF06S;DI_DF06S;Diodes;Si; 600V 1.00A 3.00us Diodes Inc. Bridge -- for one element .MODEL DI_DF06S D ( IS=4.42n RS=42.0m BV=600 IBV=10.0u + CJO=65.0p M=0.333 N=1.70 TT=4.32u ) *SRC=DF08M;DI_DF08M;Diodes;Si; 800V 1.00A 3.00us Diodes Inc. Bridge -- for one element .MODEL DI_DF08M D ( IS=4.42n RS=42.0m BV=800 IBV=10.0u + CJO=65.0p M=0.333 N=1.70 TT=4.32u ) *SRC=DF08S;DI_DF08S;Diodes;Si; 800V 1.00A 3.00us Diodes Inc. Bridge -- for one element .MODEL DI_DF08S D ( IS=4.42n RS=42.0m BV=800 IBV=10.0u + CJO=65.0p M=0.333 N=1.70 TT=4.32u ) *SRC=DF10M;DI_DF10M;Diodes;Si; 1.00kV 1.00A 3.00us Diodes Inc. Bridge -- for one element .MODEL DI_DF10M D ( IS=4.42n RS=42.0m BV=1.00k IBV=10.0u + CJO=65.0p M=0.333 N=1.70 TT=4.32u ) *SRC=DF10S;DI_DF10S;Diodes;Si; 1.00kV 1.00A 3.00us Diodes Inc. Bridge -- for one element .MODEL DI_DF10S D ( IS=4.42n RS=42.0m BV=1.00k IBV=10.0u + CJO=65.0p M=0.333 N=1.70 TT=4.32u ) *SRC=DF15005S;DI_DF15005S;Diodes;Si; 50.0V 1.50A 3.00us Diodes Inc. Bridge -- for one element .MODEL DI_DF15005S D ( IS=2.06n RS=28.1m BV=50.0 IBV=10.0u + CJO=65.0p M=0.333 N=1.70 TT=4.32u ) *SRC=DF1501S;DI_DF1501S;Diodes;Si; 100V 1.50A 3.00us Diodes Inc. Bridge -- for one element .MODEL DI_DF1501S D ( IS=2.06n RS=28.1m BV=100 IBV=10.0u + CJO=65.0p M=0.333 N=1.70 TT=4.32u ) *SRC=DF1502S;DI_DF1502S;Diodes;Si; 200V 1.50A 3.00us Diodes Inc. Bridge -- for one element .MODEL DI_DF1502S D ( IS=2.06n RS=28.1m BV=200 IBV=10.0u + CJO=65.0p M=0.333 N=1.70 TT=4.32u ) *SRC=DF1504S;DI_DF1504S;Diodes;Si; 400V 1.50A 3.00us Diodes Inc. Bridge -- for one element .MODEL DI_DF1504S D ( IS=2.06n RS=28.1m BV=400 IBV=10.0u + CJO=65.0p M=0.333 N=1.70 TT=4.32u ) *SRC=DF1506S;DI_DF1506S;Diodes;Si; 600V 1.50A 3.00us Diodes Inc. Bridge -- for one element .MODEL DI_DF1506S D ( IS=2.06n RS=28.1m BV=600 IBV=10.0u + CJO=65.0p M=0.333 N=1.70 TT=4.32u ) *SRC=DF1508S;DI_DF1508S;Diodes;Si; 800V 1.50A 3.00us Diodes Inc. Bridge -- for one element .MODEL DI_DF1508S D ( IS=2.06n RS=28.1m BV=800 IBV=10.0u + CJO=65.0p M=0.333 N=1.70 TT=4.32u ) *SRC=DF1510S;DI_DF1510S;Diodes;Si; 1.00kV 1.50A 3.00us Diodes Inc. Bridge -- for one element .MODEL DI_DF1510S D ( IS=2.06n RS=28.1m BV=1.00k IBV=10.0u + CJO=65.0p M=0.333 N=1.70 TT=4.32u ) *SRC=DFLR1200;DI_DFLR1200;Diodes;Si; 200V 1.00A 3.00us Diodes Inc Standard Recovery Rectifier .MODEL DI_DFLR1200 D ( IS=5.90n RS=44.7m BV=200 IBV=3.00u + CJO=18.5p M=0.333 N=1.88 TT=4.32u ) *SRC=DFLR1400;DI_DFLR1400;Diodes;Si; 400V 1.00A 3.00us Diodes Inc Standard Recovery Rectifier .MODEL DI_DFLR1400 D ( IS=5.90n RS=44.7m BV=400 IBV=3.00u + CJO=18.5p M=0.333 N=1.88 TT=4.32u ) *SRC=DFLR1600;DI_DFLR1600;Diodes;Si; 600V 1.00A 3.00us Diodes Inc Standard Recovery Rectifier .MODEL DI_DFLR1600 D ( IS=5.90n RS=44.7m BV=600 IBV=3.00u + CJO=18.5p M=0.333 N=1.88 TT=4.32u ) *SRC=DFLS1100;DI_DFLS1100;Diodes;Si; 100V 1.00A 11.0ns Diodes Inc. Schottky Rectifier .MODEL DI_DFLS1100 D ( IS=270n RS=28.3m BV=100 IBV=1.00u + CJO=70.9p M=0.333 N=1.50 TT=15.8n ) *SRC=DFLS1150;DI_DFLS1150;Diodes;Si; 150V 1.00A 14.0ns Diodes Inc. Schottky Rectifier .MODEL DI_DFLS1150 D ( IS=10.2u RS=27.0m BV=150 IBV=2.00u + CJO=55.2p M=0.333 N=2.32 TT=20.2n ) *SRC=DFLS1200;DI_DFLS1200;Diodes;Si; 200V 1.00A 30.0ns Diodes Inc. Schottky .MODEL DI_DFLS1200 D ( IS=64.7u RS=10.3m BV=200 IBV=2.00u + CJO=45.3p M=0.333 N=3.25 TT=43.2n ) *SRC=DFLS120L;DI_DFLS120L;Diodes;Si; 20.0V 1.00A 5.00ns DIODES INC SCHOTTKY RECTIFIER .MODEL DI_DFLS120L D ( IS=21.0u RS=46.3m BV=20.0 IBV=1.00m + CJO=252p M=0.333 N=0.936 TT=7.20n ) *SRC=DFLS130;DI_DFLS130;Diodes;Si; 30.0V 1.00A 5.00ns DIODES INC SCHOTTKY RECTIFIER .MODEL DI_DFLS130 D ( IS=35.5u RS=54.5m BV=30.0 IBV=1.00m + CJO=97.1p M=0.333 N=1.09 TT=7.20n ) *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG_SU *SIMULATOR=SIMETRIX *DATE=10AUG2011 *VERSION=2 * .MODEL DFLS130L D(IS=10U RS=58m N=0.88 BV=30 IBV=0.36m NBV=150 + EG=0.62 ISR=30u CJO=396.4p VJ=0.31 M=0.48 TBV1=-0.007 TRS1=0.0045) *$ *SRC=DFLS140;DI_DFLS140;Diodes;Si; 40.0V 1.10A 5.00ns Diodes Inc Schottky .MODEL DI_DFLS140 D ( IS=163n RS=0.103 BV=40.0 IBV=20.0u + CJO=99.4p M=0.333 N=1.00 TT=7.20n ) *SRC=DFLS140L;DI_DFLS140L;Diodes;Si; 40.0V 1.00A 5.00ns Diodes Inc. Low VF Schottky .MODEL DI_DFLS140L D ( IS=817n RS=32.2m BV=40.0 IBV=500u + CJO=293p M=0.333 N=1.01 TT=7.20n ) *SRC=DFLS160;DI_DFLS160;Diodes;Si; 60.0V 1.00A 10.0ns Diodes Inc. Schottky Rectifier .MODEL DI_DFLS160 D ( IS=736n RS=63.0m BV=60.0 IBV=100u + CJO=163p M=0.333 N=1.01 TT=14.4n ) *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG_SU *SIMULATOR=SIMETRIX *DATE=16/12/2014 *VERSION=1.1 * .SUBCKT DFLS2100 1 2 D1 1 2 Dsch D2 1 2 Dpn .MODEL Dsch D (IS=4n RS=.2 BV=110 IBV=50u CJO=88p M=.4 VJ=.55 N=1.05 IKF=60m TRS1=.006 TT=15n EG=.8) .model Dpn D(IS=1p IKF=100 BV=110 TT=50n EG=1.05 RS=.028 ISR=1n) .ENDS * (c) 2014 Diodes Inc * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL *SRC=DFLS220L;DI_DFLS220L;Diodes;Si; 20.0V 2.00A 5.00ns Diodes Inc. Schottky .MODEL DI_DFLS220L D ( IS=20.3u RS=47.4m BV=20.0 IBV=1.00m + CJO=252p M=0.333 N=0.947 TT=7.20n ) *SRC=DFLS230;DI_DFLS230;Diodes;Si; 30.0V 2.00A 5.00ns Diodes Inc. Schottky .MODEL DI_DFLS230 D ( IS=100u RS=52.2m BV=30.0 IBV=1.00m + CJO=133p M=0.333 N=1.27 TT=7.20n ) *SRC=DFLS230L;DI_DFLS230L;Diodes;Si; 30.0V 2.00A 5.00ns Diodes Inc. Schottky .MODEL DI_DFLS230L D ( IS=125u RS=43.6m BV=30.0 IBV=1.00m + CJO=265p M=0.333 N=1.21 TT=7.20n ) *SRC=DFLS230LH;DI_DFLS230LH;Diodes;Si; 30.0V 1.00A 11.0ns Diodes Inc. Schottky .MODEL DI_DFLS230LH D ( IS=947n RS=32.4m BV=30.0 IBV=200u + CJO=206p M=0.333 N=0.957 TT=15.8n ) *SRC=DFLS240L;DI_DFLS240L;Diodes;Si; 40.0V 2.00A 5.00ns Diodes Inc. Schottky .MODEL DI_DFLS240L D ( IS=516n RS=31.4m BV=40.0 IBV=500u + CJO=292p M=0.333 N=0.911 TT=7.20n ) *DFLS260 Spice Model v1.0 Last Revised 3/21/2017 Diodes Inc SUPER BARRIER RECTIFIER SIMULATOR=SPICE3 .MODEL DI_DFLS260 D ( IS=721.4n RS=80.00m BV=60.00 IBV=10.00 + CJO=320.8p M=450.7m N=1.029 TT=10.00n EG=480.0m VJ=292.4m ) * (c) 2017 Diodes Incorporated * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Diodes "). They are supplied * free of charge by Diodes for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Taiwan Inc.7F.,No. 50,Min-Chuan Road,Hsin-Tien District,New Taipei City 23141, Taiwan *DFLU1200 Spice Model v1.0 01/12/2017 Diodes Inc SuperFast Recovery Rectifier .MODEL DI_DFLU1200 D ( +LEVEL = 1 IS = 11n RS = 44.7m +N = 1.10 BV = 200 IBV = 5e-06 +CJO = 45p VJ = 0.468489 MJ = 0.395956 +FC = 0.5 XTI = 3.14412 EG = 1.11 +TT = 33e-9 IKF = 6.06945e-06 TRS1 = -0.00446639 +TRS2 = 9.32759e-06 ) *(c) 2017 Diodes Incorporated * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Diodes "). They are supplied * free of charge by Diodes for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Incorporated, 4949 Hedgcoxe Rd, Suite 110, Plano, TX 75024, USA * DFLU1400 SPICE model * * THIS MODEL IS A SPICE SUBCIRCUIT. * ANY NETLIST USING IT MUST INCLUDE * A STATEMENT WITH THE FOLLOWING SYNTAX * * X1 DFLU1400 A C * * SUBCIRCUIT NODE 1 -> ANODE * SUBCIRCUIT NODE 2 -> CATHODE * .SUBCKT DFLU1400 1 2 D1 1 2 DFLU1400_1 D2 1 2 DFLU1400_2 * .MODEL DFLU1400_1 D ( +LEVEL = 1 IS = 8.97113e-10 RS = 0.218519 +N = 1.00753 BV = 400 IBV = 5e-06 +CJO = 1.7785e-11 VJ = 0.468489 MJ = 0.395956 +FC = 0.5 XTI = 2.98187 EG = 1.19064 +TT = 33e-9 IKF = 6.06945e-06 TRS1 = -0.00446639 +TRS2 = 9.32759e-06 ) * .MODEL DFLU1400_2 D ( +LEVEL = 1 IS = 1.05089e-12 RS = 0.146586 +N = 1.16507 BV = 1E5 IBV = 1e-06 +CJO = 1.7785e-11 VJ = 0.468489 MJ = 0.395956 +FC = 0.5 XTI = 3.14412 EG = 1.05458 +TRS1 = 0.000149447 TRS2 = 2.90699e-05 IKF = 9.9308e-06 +TT = 33e-9 ) * .ENDS DFLU1400 *SRC=DLPA006;DI_DLPA006;Diodes;Si; 85.0V 0.160A 3.00us Diodes, Inc. Switching - one element of DLPA006 array .MODEL DI_DLPA006 D ( IS=59.0p RS=0.262 BV=85.0 IBV=5.00n + CJO=2.00p M=0.333 N=1.78 TT=4.32u ) *SRC=ES1A;DI_ES1A;Diodes;Si; 50.0V 1.00A 20.0ns Diodes Inc. .MODEL DI_ES1A D ( IS=123n RS=42.0m BV=50.0 IBV=5.00u + CJO=18.5p M=0.333 N=2.12 TT=28.8n ) *SRC=ES1B;DI_ES1B;Diodes;Si; 100V 1.00A 20.0ns Diodes Inc. .MODEL DI_ES1B D ( IS=123n RS=42.0m BV=100 IBV=5.00u + CJO=18.5p M=0.333 N=2.12 TT=28.8n ) *SRC=ES1C;DI_ES1C;Diodes;Si; 150V 1.00A 20.0ns Diodes Inc. .MODEL DI_ES1C D ( IS=123n RS=42.0m BV=150 IBV=5.00u + CJO=18.5p M=0.333 N=2.12 TT=28.8n ) *SRC=ES1D;DI_ES1D;Diodes;Si; 200V 1.00A 20.0ns Diodes Inc. .MODEL DI_ES1D D ( IS=123n RS=42.0m BV=200 IBV=5.00u + CJO=18.5p M=0.333 N=2.12 TT=28.8n ) *SRC=ES1G;DI_ES1G;Diodes;Si; 400V 1.00A 20.0ns Diodes Inc. .MODEL DI_ES1G D ( IS=373n RS=64.3m BV=400 IBV=5.00u + CJO=18.5p M=0.333 N=2.84 TT=28.8n ) *SRC=ES2A;DI_ES2A;Diodes;Si; 50.0V 2.00A 25.0ns Diodes Inc. Fast Rectifier .MODEL DI_ES2A D ( IS=267n RS=21.0m BV=50.0 IBV=5.00u + CJO=83.5p M=0.333 N=1.70 TT=36.0n ) ***************************************************************************************** *SRC=ES2AA;DI_ES2AA;Diodes;Si; 50.0V 2.00A 25.0ns Diodes Inc. Fast Rectifier .MODEL DI_ES2AA D ( IS=267n RS=21.0m BV=50.0 IBV=5.00u + CJO=83.5p M=0.333 N=1.70 TT=36.0n ) **************************************************************************************** *SRC=ES2B;DI_ES2B;Diodes;Si; 100V 2.00A 25.0ns Diodes Inc. Fast Rectifier .MODEL DI_ES2B D ( IS=267n RS=21.0m BV=100 IBV=5.00u + CJO=83.5p M=0.333 N=1.70 TT=36.0n ) **************************************************************************************** SRC=ES2BA;DI_ES2BA;Diodes;Si; 100V 2.00A 25.0ns Diodes Inc. Fast Rectifier .MODEL DI_ES2BA D ( IS=267n RS=21.0m BV=100 IBV=5.00u + CJO=83.5p M=0.333 N=1.70 TT=36.0n ) *************************************************************************************** *SRC=ES2C;DI_ES2C;Diodes;Si; 150V 2.00A 25.0ns Diodes Inc. Fast Rectifier .MODEL DI_ES2C D ( IS=267n RS=21.0m BV=150 IBV=5.00u + CJO=83.5p M=0.333 N=1.70 TT=36.0n ) *************************************************************************************** *SRC=ES2CA;DI_ES2CA;Diodes;Si; 150V 2.00A 25.0ns Diodes Inc. Fast Rectifier .MODEL DI_ES2CA D ( IS=267n RS=21.0m BV=150 IBV=5.00u + CJO=83.5p M=0.333 N=1.70 TT=36.0n ) ***************************************************************************************** *SRC=ES2D;DI_ES2D;Diodes;Si; 200V 2.00A 25.0ns Diodes Inc. Fast Rectifier .MODEL DI_ES2D D ( IS=267n RS=21.0m BV=200 IBV=5.00u + CJO=83.5p M=0.333 N=1.70 TT=36.0n ) ***************************************************************************************** *SRC=ES2DA;DI_ES2DA;Diodes;Si; 200V 2.00A 25.0ns Diodes Inc. Fast Rectifier .MODEL DI_ES2DA D ( IS=267n RS=21.0m BV=200 IBV=5.00u + CJO=83.5p M=0.333 N=1.70 TT=36.0n ) ***************************************************************************************** *SRC=ES2G;DI_ES2G;Diodes;Si; 400V 2.00A 25.0ns Diodes Inc. Fast Rectifier .MODEL DI_ES2G D ( IS=3.92n RS=21.0m BV=400 IBV=5.00u + CJO=83.5p M=0.333 N=1.95 TT=36.0n ) *SRC=ES3A;DI_ES3A;Diodes;Si; 50.0V 3.00A 25.0ns Diodes Inc. .MODEL DI_ES3A D ( IS=7.27p RS=22.4m BV=50.0 IBV=10.0u + CJO=83.2p M=0.333 N=0.700 TT=36.0n ) *SRC=ES3AB;DI_ES3AB;Diodes;Si; 50.0V 3.00A 25.0ns Diodes Inc. .MODEL DI_ES3AB D ( IS=7.27p RS=22.4m BV=50.0 IBV=10.0u + CJO=83.2p M=0.333 N=0.700 TT=36.0n ) *SRC=ES3B;DI_ES3B;Diodes;Si; 100V 3.00A 25.0ns Diodes Inc. .MODEL DI_ES3B D ( IS=7.27p RS=22.4m BV=100 IBV=10.0u + CJO=83.2p M=0.333 N=0.700 TT=36.0n ) *SRC=ES3BB;DI_ES3BB;Diodes;Si; 100V 3.00A 25.0ns Diodes Inc. .MODEL DI_ES3BB D ( IS=7.27p RS=22.4m BV=100 IBV=10.0u + CJO=83.2p M=0.333 N=0.700 TT=36.0n ) *SRC=ES3C;DI_ES3C;Diodes;Si; 150V 3.00A 25.0ns Diodes Inc. .MODEL DI_ES3C D ( IS=7.27p RS=22.4m BV=150 IBV=10.0u + CJO=83.2p M=0.333 N=0.700 TT=36.0n ) *SRC=ES3CB;DI_ES3CB;Diodes;Si; 150V 3.00A 25.0ns Diodes Inc. .MODEL DI_ES3CB D ( IS=7.27p RS=22.4m BV=150 IBV=10.0u + CJO=83.2p M=0.333 N=0.700 TT=36.0n ) *SRC=ES3D;DI_ES3D;Diodes;Si; 200V 3.00A 25.0ns Diodes Inc. .MODEL DI_ES3D D ( IS=7.27p RS=22.4m BV=200 IBV=10.0u + CJO=83.2p M=0.333 N=0.700 TT=36.0n ) *SRC=ES3DB;DI_ES3DB;Diodes;Si; 200V 3.00A 25.0ns Diodes Inc. .MODEL DI_ES3DB D ( IS=7.27p RS=22.4m BV=200 IBV=10.0u + CJO=83.2p M=0.333 N=0.700 TT=36.0n ) *FES2DEQ-7 Spice Model v1.0 Last Revised 11/23/2022 Diodes Inc SUPER BARRIER RECTIFIER SIMULATOR=SPICE3 .MODEL DI_FES2DEQ-7 D ( IS=91.46n RS=20.89m BV=220.00 IBV=10.00 + CJO=79.59p M=380.8m N=1.817 TT=22.92n EG=480.0m VJ=346.3m ) *SRC=GBJ15005;DI_GBJ15005;Diodes;Si; 50.0V 15.0A 3.00us Diodes Inc. Bridge Rectifier -- for one element .MODEL DI_GBJ15005 D ( IS=5.11u RS=3.43m BV=50.0 IBV=10.0u + CJO=106p M=0.333 N=2.44 TT=4.32u ) *SRC=GBJ1501;DI_GBJ1501;Diodes;Si; 100V 15.0A 3.00us Diodes Inc. Bridge Rectifier -- for one element .MODEL DI_GBJ1501 D ( IS=5.11u RS=3.43m BV=100 IBV=10.0u + CJO=106p M=0.333 N=2.44 TT=4.32u ) *SRC=GBJ1502;DI_GBJ1502;Diodes;Si; 200V 15.0A 3.00us Diodes Inc. Bridge Rectifier -- for one element .MODEL DI_GBJ1502 D ( IS=5.11u RS=3.43m BV=200 IBV=10.0u + CJO=106p M=0.333 N=2.44 TT=4.32u ) *SRC=GBJ1504;DI_GBJ1504;Diodes;Si; 400V 15.0A 3.00us Diodes Inc. Bridge Rectifier -- for one element .MODEL DI_GBJ1504 D ( IS=5.11u RS=3.43m BV=400 IBV=10.0u + CJO=106p M=0.333 N=2.44 TT=4.32u ) *SRC=GBJ1506;DI_GBJ1506;Diodes;Si; 600V 15.0A 3.00us Diodes Inc. Bridge Rectifier -- for one element .MODEL DI_GBJ1506 D ( IS=5.11u RS=3.43m BV=600 IBV=10.0u + CJO=106p M=0.333 N=2.44 TT=4.32u ) *SRC=GBJ1508;DI_GBJ1508;Diodes;Si; 800V 15.0A 3.00us Diodes Inc. Bridge Rectifier -- for one element .MODEL DI_GBJ1508 D ( IS=5.11u RS=3.43m BV=800 IBV=10.0u + CJO=106p M=0.333 N=2.44 TT=4.32u ) *SRC=GBJ1510;DI_GBJ1510;Diodes;Si; 1.00kV 15.0A 3.00us Diodes Inc. Bridge Rectifier -- for one element .MODEL DI_GBJ1510 D ( IS=5.11u RS=3.43m BV=1.00k IBV=10.0u + CJO=106p M=0.333 N=2.44 TT=4.32u ) *SRC=GBJ20005;DI_GBJ20005;Diodes;Si; 50.0V 20.0A 3.00us Diodes Inc. Bridge Rect. This model covers only one element. There are four elements per pkg. .MODEL DI_GBJ20005 D ( IS=15.1u RS=2.96m BV=50.0 IBV=10.0u + CJO=111p M=0.333 N=2.84 TT=4.32u ) *SRC=GBJ2001;DI_GBJ2001;Diodes;Si; 100V 20.0A 3.00us Diodes Inc. Bridge Rect. This model covers only one element. There are four elements per pkg. .MODEL DI_GBJ2001 D ( IS=15.1u RS=2.96m BV=100 IBV=10.0u + CJO=111p M=0.333 N=2.84 TT=4.32u ) *SRC=GBJ2002;DI_GBJ2002;Diodes;Si; 200V 20.0A 3.00us Diodes Inc. Bridge Rect. This model covers only one element. There are four elements per pkg. .MODEL DI_GBJ2002 D ( IS=15.1u RS=2.96m BV=200 IBV=10.0u + CJO=111p M=0.333 N=2.84 TT=4.32u ) *SRC=GBJ2004;DI_GBJ2004;Diodes;Si; 400V 20.0A 3.00us Diodes Inc. Bridge Rect. This model covers only one element. There are four elements per pkg. .MODEL DI_GBJ2004 D ( IS=15.1u RS=2.96m BV=400 IBV=10.0u + CJO=111p M=0.333 N=2.84 TT=4.32u ) *SRC=GBJ2006;DI_GBJ2006;Diodes;Si; 600V 20.0A 3.00us Diodes Inc. Bridge Rect. This model covers only one element. There are four elements per pkg. .MODEL DI_GBJ2006 D ( IS=15.1u RS=2.96m BV=600 IBV=10.0u + CJO=111p M=0.333 N=2.84 TT=4.32u ) *SRC=GBJ2008;DI_GBJ2008;Diodes;Si; 800V 20.0A 3.00us Diodes Inc. Bridge Rect. This model covers only one element. There are four elements per pkg. .MODEL DI_GBJ2008 D ( IS=15.1u RS=2.96m BV=800 IBV=10.0u + CJO=111p M=0.333 N=2.84 TT=4.32u ) *SRC=GBJ2010;DI_GBJ2010;Diodes;Si; 1.00kV 20.0A 3.00us Diodes Inc. Bridge Rect. This model covers only one element. There are four elements per pkg. .MODEL DI_GBJ2010 D ( IS=15.1u RS=2.96m BV=1.00k IBV=10.0u + CJO=111p M=0.333 N=2.84 TT=4.32u ) *SRC=GBJ2510;DI_GBJ2510;Diodes;Si; 1.00kV 25.0A 3.00us Diodes Inc. Bridge Rectifier--Per Element .MODEL DI_GBJ2510 D ( IS=379n RS=2.84m BV=1.00k IBV=10.0u + CJO=146p M=0.333 N=2.07 TT=4.32u ) *SRC=GBU1002;DI_GBU1002;Diodes;Si; 200V 10.0A 3.00us Diodes Inc. Bridge Rectifier -- Per Element .MODEL DI_GBU1002 D ( IS=1.71f RS=7.00m BV=200 IBV=5.00u + CJO=133p M=0.333 N=0.900 TT=4.32u ) *SRC=GBU1010;DI_GBU1010;Diodes;Si; 1000V 10.0A 3.00us Diodes Inc. Bridge Rectifier -- Per Element .MODEL DI_GBU1010 D ( IS=1.71f RS=7.00m BV=1000 IBV=5.00u + CJO=133p M=0.333 N=0.900 TT=4.32u ) .ENDS* *SRC=GBU4005;DI_GBU4005;Diodes;Si; 50.0V 4.00A 3.00us Diodes Inc. Bridge -- for one element .MODEL DI_GBU4005 D ( IS=23.3n RS=7.20m BV=50.0 IBV=5.00u + CJO=148p M=0.333 N=1.80 TT=4.32u ) *SRC=GBU401;DI_GBU401;Diodes;Si; 100V 4.00A 3.00us Diodes Inc. Bridge -- for one element .MODEL DI_GBU401 D ( IS=23.3n RS=7.20m BV=100 IBV=5.00u + CJO=148p M=0.333 N=1.80 TT=4.32u ) *SRC=GBU402;DI_GBU402;Diodes;Si; 200V 4.00A 3.00us Diodes Inc. Bridge -- for one element .MODEL DI_GBU402 D ( IS=23.3n RS=7.20m BV=200 IBV=5.00u + CJO=148p M=0.333 N=1.80 TT=4.32u ) *SRC=GBU404;DI_GBU404;Diodes;Si; 400V 4.00A 3.00us Diodes Inc. Bridge -- for one element .MODEL DI_GBU404 D ( IS=23.3n RS=7.20m BV=400 IBV=5.00u + CJO=148p M=0.333 N=1.80 TT=4.32u ) *SRC=GBU406;DI_GBU406;Diodes;Si; 600V 4.00A 3.00us Diodes Inc. Bridge -- for one element .MODEL DI_GBU406 D ( IS=23.3n RS=7.20m BV=600 IBV=5.00u + CJO=148p M=0.333 N=1.80 TT=4.32u ) *SRC=GBU408;DI_GBU408;Diodes;Si; 800V 4.00A 3.00us Diodes Inc. Bridge -- for one element .MODEL DI_GBU408 D ( IS=23.3n RS=7.20m BV=800 IBV=5.00u + CJO=148p M=0.333 N=1.80 TT=4.32u ) *SRC=GBU410;DI_GBU410;Diodes;Si; 1.00kV 4.00A 3.00us Diodes Inc. Bridge -- for one element .MODEL DI_GBU410 D ( IS=23.3n RS=7.20m BV=1.00k IBV=5.00u + CJO=148p M=0.333 N=1.80 TT=4.32u ) *SRC=GBU8005;DI_GBU8005;Diodes;Si; 50.0V 8.00A 3.00us Diodes Inc. Bridge -- for one element .MODEL DI_GBU8005 D ( IS=17.8p RS=7.59m BV=50.0 IBV=5.00u + CJO=240p M=0.333 N=1.25 TT=4.32u ) *SRC=GBU801;DI_GBU801;Diodes;Si; 100V 8.00A 3.00us Diodes Inc. Bridge -- for one element .MODEL DI_GBU801 D ( IS=17.8p RS=7.59m BV=100 IBV=5.00u + CJO=240p M=0.333 N=1.25 TT=4.32u ) *SRC=GBU802;DI_GBU802;Diodes;Si; 200V 8.00A 3.00us Diodes Inc. Bridge -- for one element .MODEL DI_GBU802 D ( IS=17.8p RS=7.59m BV=200 IBV=5.00u + CJO=240p M=0.333 N=1.25 TT=4.32u ) *SRC=GBU804;DI_GBU804;Diodes;Si; 400V 8.00A 3.00us Diodes Inc. Bridge -- for one element .MODEL DI_GBU804 D ( IS=17.8p RS=7.59m BV=400 IBV=5.00u + CJO=240p M=0.333 N=1.25 TT=4.32u ) *SRC=GBU806;DI_GBU806;Diodes;Si; 600V 8.00A 3.00us Diodes Inc. Bridge -- for one element .MODEL DI_GBU806 D ( IS=17.8p RS=7.59m BV=600 IBV=5.00u + CJO=240p M=0.333 N=1.25 TT=4.32u ) *SRC=GBU808;DI_GBU808;Diodes;Si; 800V 8.00A 3.00us Diodes Inc. Bridge -- for one element .MODEL DI_GBU808 D ( IS=17.8p RS=7.59m BV=800 IBV=5.00u + CJO=240p M=0.333 N=1.25 TT=4.32u ) *SRC=GBU810;DI_GBU810;Diodes;Si; 1.00kV 8.00A 3.00us Diodes Inc. Bridge -- for one element .MODEL DI_GBU810 D ( IS=17.8p RS=7.59m BV=1.00k IBV=5.00u + CJO=240p M=0.333 N=1.25 TT=4.32u ) *SRC=HBS410;DI_HBS410;Diodes;Si; 1.00kV 4.00A 3.00µs Diodes Inc. Bridge -- for one element .MODEL DI_HBS410 D ( IS=130.2n RS=6.366m BV=1.229k IBV=1m + CJO=69.01p M=0.295 N=2.075 TT=4.32µ) *SRC=HD01;DI_HD01;Diodes;Si; 100V 0.800A 3.00us Diodes Inc. Bridge Rectifier -- for one element .MODEL DI_HD01 D ( IS=3.47n RS=42.6m BV=100 IBV=5.00u + CJO=25.2p M=0.333 N=1.70 TT=4.32u ) *SRC=HD02;DI_HD02;Diodes;Si; 200V 0.800A 3.00us Diodes Inc. Bridge Rectifier -- for one element .MODEL DI_HD02 D ( IS=3.47n RS=42.6m BV=200 IBV=5.00u + CJO=25.2p M=0.333 N=1.70 TT=4.32u ) *SRC=HD04;DI_HD04;Diodes;Si; 400V 0.800A 3.00us Diodes Inc. Bridge Rectifier -- for one element .MODEL DI_HD04 D ( IS=3.47n RS=42.6m BV=400 IBV=5.00u + CJO=25.2p M=0.333 N=1.70 TT=4.32u ) *SRC=HD06;DI_HD06;Diodes;Si; 600V 0.800A 3.00us Diodes Inc. Bridge Rectifier -- for one element .MODEL DI_HD06 D ( IS=3.47n RS=42.6m BV=600 IBV=5.00u + CJO=25.2p M=0.333 N=1.70 TT=4.32u ) *SRC=KBJ4005G;DI_KBJ4005G;Diodes;Si; 50.0V 4.00A 3.00us Diodes Inc. Bridge Rectifier - Per Diode .MODEL DI_KBJ4005G D ( IS=656n RS=10.5m BV=50.0 IBV=10.0u + CJO=79.6p M=0.333 N=2.45 TT=4.32u ) *SRC=KBJ401G;DI_KBJ401G;Diodes;Si; 100V 4.00A 3.00us Diodes Inc. Bridge Rectifier - Per Diode .MODEL DI_KBJ401G D ( IS=656n RS=10.5m BV=100 IBV=10.0u + CJO=79.6p M=0.333 N=2.45 TT=4.32u ) *SRC=KBJ402G;DI_KBJ402G;Diodes;Si; 200V 4.00A 3.00us Diodes Inc. Bridge Rectifier - Per Diode .MODEL DI_KBJ402G D ( IS=656n RS=10.5m BV=200 IBV=10.0u + CJO=79.6p M=0.333 N=2.45 TT=4.32u ) *SRC=KBJ404G;DI_KBJ404G;Diodes;Si; 400V 4.00A 3.00us Diodes Inc. Bridge Rectifier - Per Diode .MODEL DI_KBJ404G D ( IS=656n RS=10.5m BV=400 IBV=10.0u + CJO=79.6p M=0.333 N=2.45 TT=4.32u ) *SRC=KBJ406G;DI_KBJ406G;Diodes;Si; 600V 4.00A 3.00us Diodes Inc. Bridge Rectifier - Per Diode .MODEL DI_KBJ406G D ( IS=656n RS=10.5m BV=600 IBV=10.0u + CJO=79.6p M=0.333 N=2.45 TT=4.32u ) *SRC=KBJ408G;DI_KBJ408G;Diodes;Si; 800V 4.00A 3.00us Diodes Inc. Bridge Rectifier - Per Diode .MODEL DI_KBJ408G D ( IS=656n RS=10.5m BV=800 IBV=10.0u + CJO=79.6p M=0.333 N=2.45 TT=4.32u ) *SRC=KBJ410G;DI_KBJ410G;Diodes;Si; 1.00kV 4.00A 3.00us Diodes Inc. Bridge Rectifier - Per Diode .MODEL DI_KBJ410G D ( IS=656n RS=10.5m BV=1.00k IBV=10.0u + CJO=79.6p M=0.333 N=2.45 TT=4.32u ) *SRC=KBP005G;DI_KBP005G;Diodes;Si; 50.0V 1.50A 3.00us Diodes Inc. Bridge -- for one element .MODEL DI_KBP005G D ( IS=39.2u RS=28.1m BV=50.0 IBV=5.00u + CJO=26.5p M=0.333 N=4.38 TT=4.32u ) *SRC=KBP01G;DI_KBP01G;Diodes;Si; 100V 1.50A 3.00us Diodes Inc. Bridge -- for one element .MODEL DI_KBP01G D ( IS=39.2u RS=28.1m BV=100 IBV=5.00u + CJO=26.5p M=0.333 N=4.38 TT=4.32u ) *SRC=KBP02G;DI_KBP02G;Diodes;Si; 200V 1.50A 3.00us Diodes Inc. Bridge -- for one element .MODEL DI_KBP02G D ( IS=39.2u RS=28.1m BV=200 IBV=5.00u + CJO=26.5p M=0.333 N=4.38 TT=4.32u ) *SRC=KBP04G;DI_KBP04G;Diodes;Si; 400V 1.50A 3.00us Diodes Inc. Bridge -- for one element .MODEL DI_KBP04G D ( IS=39.2u RS=28.1m BV=400 IBV=5.00u + CJO=26.5p M=0.333 N=4.38 TT=4.32u ) *SRC=KBP06G;DI_KBP06G;Diodes;Si; 600V 1.50A 3.00us Diodes Inc. Bridge -- for one element .MODEL DI_KBP06G D ( IS=39.2u RS=28.1m BV=600 IBV=5.00u + CJO=26.5p M=0.333 N=4.38 TT=4.32u ) *SRC=KBP08G;DI_KBP08G;Diodes;Si; 800V 1.50A 3.00us Diodes Inc. Bridge -- for one element .MODEL DI_KBP08G D ( IS=39.2u RS=28.1m BV=800 IBV=5.00u + CJO=26.5p M=0.333 N=4.38 TT=4.32u ) *SRC=KBP10G;DI_KBP10G;Diodes;Si; 1.00kV 1.50A 3.00us Diodes Inc. Bridge -- for one element .MODEL DI_KBP10G D ( IS=39.2u RS=28.1m BV=1.00k IBV=5.00u + CJO=26.5p M=0.333 N=4.38 TT=4.32u ) *SRC=KBP2005G;DI_KBP2005G;Diodes;Si; 50.0V 2.00A 3.00us Diodes Inc. Bridge -- for one element .MODEL DI_KBP2005G D ( IS=143n RS=21.1m BV=50.0 IBV=5.00u + CJO=46.2p M=0.333 N=2.12 TT=4.32u ) *SRC=KBP201G;DI_KBP201G;Diodes;Si; 100V 2.00A 3.00us Diodes Inc. Bridge -- for one element .MODEL DI_KBP201G D ( IS=143n RS=21.1m BV=100 IBV=5.00u + CJO=46.2p M=0.333 N=2.12 TT=4.32u ) *SRC=KBP202G;DI_KBP202G;Diodes;Si; 200V 2.00A 3.00us Diodes Inc. Bridge -- for one element .MODEL DI_KBP202G D ( IS=143n RS=21.1m BV=200 IBV=5.00u + CJO=46.2p M=0.333 N=2.12 TT=4.32u ) *SRC=KBP204G;DI_KBP204G;Diodes;Si; 400V 2.00A 3.00us Diodes Inc. Bridge -- for one element .MODEL DI_KBP204G D ( IS=143n RS=21.1m BV=400 IBV=5.00u + CJO=46.2p M=0.333 N=2.12 TT=4.32u ) *SRC=KBP206G;DI_KBP206G;Diodes;Si; 600V 2.00A 3.00us Diodes Inc. Bridge -- for one element .MODEL DI_KBP206G D ( IS=143n RS=21.1m BV=600 IBV=5.00u + CJO=46.2p M=0.333 N=2.12 TT=4.32u ) *SRC=KBP208G;DI_KBP208G;Diodes;Si; 800V 2.00A 3.00us Diodes Inc. Bridge -- for one element .MODEL DI_KBP208G D ( IS=143n RS=21.1m BV=800 IBV=5.00u + CJO=46.2p M=0.333 N=2.12 TT=4.32u ) *SRC=KBP210G;DI_KBP210G;Diodes;Si; 1.00kV 2.00A 3.00us Diodes Inc. Bridge -- for one element .MODEL DI_KBP210G D ( IS=143n RS=21.1m BV=1.00k IBV=5.00u + CJO=46.2p M=0.333 N=2.12 TT=4.32u ) *SRC=MBR1035;DI_MBR1035;Diodes;Si; 35.0V 10.0A 5.00ns Diodes Inc. Schottky Barrier Rectifier .MODEL DI_MBR1035 D ( IS=2.62m RS=4.20m BV=35.0 IBV=100u + CJO=796p M=0.333 N=2.12 TT=7.20n ) *SRC=MBR1050;DI_MBR1050;Diodes;Si; 50.0V 10.0A 5.00ns Diodes Inc. Schottky Barrier Rectifier .MODEL DI_MBR1050 D ( IS=153u RS=3.17m BV=50.0 IBV=100u + CJO=796p M=0.333 N=1.96 TT=7.20n ) *SRC=MBR1530CT;DI_MBR1530CT;Diodes;Si; 30.0V 15.0A 5.00ns Diodes Inc. Schottky - One element of device .MODEL DI_MBR1530CT D ( IS=344u RS=2.81m BV=30.0 IBV=25.0u + CJO=530p M=0.333 N=2.28 TT=7.20n ) *SRC=MBR1535CT;DI_MBR1535CT;Diodes;Si; 35.0V 15.0A 5.00ns Diodes Inc. Schottky - One element of device .MODEL DI_MBR1535CT D ( IS=344u RS=2.81m BV=35.0 IBV=25.0u + CJO=530p M=0.333 N=2.28 TT=7.20n ) *SRC=MBR1550CT;DI_MBR1550CT;Diodes;Si; 50.0V 15.0A 5.00ns Diodes Inc. Schottky - One element of device .MODEL DI_MBR1550CT D ( IS=11.3u RS=2.64m BV=50.0 IBV=25.0u + CJO=530p M=0.333 N=1.87 TT=7.20n ) *MBR230S1F Spice Model v1.0 Last Revised 4/3/209 Diodes Inc SUPER BARRIER RECTIFIER SIMULATOR=SPICE3 .MODEL DI_SMBR230S1F D ( IS=22.00u RS=29.65m BV=40.00 IBV=10.00 + CJO=409.0p M=469.1m N=1.012 TT=10.00n EG=480.0m VJ=287.2m ) * (c) 2019 Diodes Incorporated * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Diodes "). They are supplied * free of charge by Diodes for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Taiwan Inc.7F.,No. 50,Min-Chuan Road,Hsin-Tien District,New Taipei City 23141, Taiwan *SRC=MSB15MH; DI_MSB15MH; Diodes Inc.; Si; 1000V 1.50A Diodes Bridge -- for one element .MODEL DI_MSB15MH D ( IS=1.14457E-09 RS=19m BV=1000 IBV=5.00u + CJO=43.5p M=0.333 N=1.7 TT=4.32u ) *SRC=MSB25MH; DI_MSB25MH; Diodes Inc.; Si; 1000V 2.50A Diodes Bridge -- for one element .MODEL DI_MSB25MH D ( IS=2.3E-10 RS=11.56m BV=1000 IBV=5.00u + CJO=52.5p M=0.333 N=1.7 TT=4.32u ) *SRC=MUR120;DI_MUR120;Diodes;Si; 200V 1.00A 25.0ns Diodes Inc. Super Fast Rectifier .MODEL DI_MUR120 D ( IS=7.06e-017 RS=73.4m BV=200 IBV=2.00u + CJO=49.9p M=0.333 N=0.700 TT=36.0n ) *SRC=MURS120;DI_MURS120;Diodes;Si; 200V 1.00A 25.0ns Diodes Inc. Super Fast Rectifier .MODEL DI_MURS120 D ( IS=17.1n RS=20.6m BV=200 IBV=2.00u + CJO=60.0p M=0.333 N=1.73 TT=36.0n ) ************************************************************************************************************************************ *SRC=MURS140;DI_MURS140;Diodes;Si; 400V 1.00A 50.0ns Diodes Inc. Super Fast Rectifier .MODEL DI_MURS140 D ( IS=17.1n RS=20.6m BV=400 IBV=2.00u + CJO=45.0p M=0.333 N=1.73 TT=72.0n ) *********************************************************************************************************************************** *SRC=MURS160;DI_MURS160;Diodes;Si; 600V 1.00A 50.0ns Diodes Inc. Super Fast Rectifier .MODEL DI_MURS160 D ( IS=17.1n RS=20.6m BV=600 IBV=2.00u + CJO=45.0p M=0.333 N=1.73 TT=72.0n ) *********************************************************************************************************************************** *SRC=MURS320;DI_MURS320;Diodes;Si; 200V 3.00A 25.0ns Diodes Inc. Super Fast Rectifier .MODEL DI_MURS320 D ( IS=11.8n RS=7.89m BV=200 IBV=5.00u + CJO=45.0p M=0.333 N=1.56 TT=36.0n ) *********************************************************************************************************************************** *SRC=PD3S120L;DI_PD3S120L;Diodes;Si; 20.0V 1.00A 18.0ns Diodes INC Schottky rectifier .MODEL DI_PD3S120L D ( IS=4.60u RS=41.2m BV=20.0 IBV=70.0u + CJO=112p M=0.333 N=1.03 TT=25.9n ) *SRC=PS3S130H;DI_PD3S130H;Diodes;Si; 30.0V 1.00A 17.5ns Diodes INC Schottky rectifier .MODEL DI_PD3S130H D ( IS=425n RS=67.9m BV=30.0 IBV=100u + CJO=97.1p M=0.333 N=1.07 TT=25.2n ) *SRC=PS3S130L;DI_PD3S130L;Diodes;Si; 30.0V 1.00A 21.5ns Diodes INC Schottky rectifier .MODEL DI_PD3S130L D ( IS=6.92u RS=35.0m BV=30.0 IBV=1.50m + CJO=97.1p M=0.333 N=0.953 TT=31.0n ) *SRC=PS3S140;DI_PD3S140;Diodes;Si; 40.0V 1.00A 27.0ns Diodes INC Schottky rectifier .MODEL DI_PD3S140 D ( IS=91.2n RS=62.2m BV=40.0 IBV=50.0u + CJO=77.7p M=0.333 N=0.996 TT=38.9n ) *SRC=PS3S160;DI_PD3S160;Diodes;Si; 60.0V 1.00A 13.0ns Diodes INC Schottky rectifier .MODEL DI_PD3S160 D ( IS=82.7n RS=57.6m BV=60.0 IBV=100u + CJO=92.2p M=0.333 N=1.09 TT=18.7n ) * *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG *SIMULATOR=PSPICE *DATE=13/10/2009 *VERSION=1 * .MODEL PD3S230L D IS=1.07E-5 N=1 ISR=7E-6 NR=1 BV=33 + IBV=1E-4 NBV=5 IBVL=6E-6 NBVL=200 RS=0.035 CJO=220E-12 + VJ=0.33 M=0.40 EG=0.6 XTI=2 TRS1=6E-3 * *$ *SRC=PDR3G;DI_PDR3G;Diodes;Si; 400V 3.00A 3.09us Diodes Inc. Standard Recovery Rectifier .MODEL DI_PDR3G D ( IS=5.82n RS=13.9m BV=400 IBV=10.0u + CJO=38.5p M=0.333 N=1.70 TT=4.45u ) *SRC=PDR5G;DI_PDR5G;Diodes;Si; 400V 5.00A 3.32us Diodes Inc. Standard Recovery Rectifier .MODEL DI_PDR5G D ( IS=8.05n RS=8.40m BV=400 IBV=10.0u + CJO=75.6p M=0.333 N=1.70 TT=4.78u ) *SRC=PDS1040;DI_PDS1040;Diodes;Si; 40.0V 10.0A 10.0ns Diodes Inc. Schottky .MODEL DI_PDS1040 D ( IS=2.78u RS=2.78m BV=40.0 IBV=700u + CJO=1.72n M=0.333 N=1.05 TT=14.4n ) *SRC=PDS1040CTL;Di_PDS1040CTL;Diodes;Si; 40.0V 10.0A 20.0ns Diodes Inc. 10A Dual Low VF Schottky Barrier Rectifier Per Node .MODEL Di_PDS1040CTL D ( IS=21.5u RS=4.20m BV=40.0 IBV=200u + CJO=789p M=0.333 N=1.28 TT=28.8n ) *SRC=PDS1040L;Di_PDS1040L;Diodes;Si; 40.0V 10.0A 35.0ns Diodes Inc. 10A Low VF Schottky Barrier Rectifier .MODEL Di_PDS1040L D ( IS=6.02u RS=4.20m BV=40.0 IBV=600u + CJO=2.21n M=0.333 N=1.04 TT=50.4n ) *SRC=PDS1045;Di_PDS1045;Diodes;Si; 45.0V 10.0A 31.1ns Diodes Inc. 10A Schottky Barrier Rectifier .MODEL Di_PDS1045 D ( IS=17.0u RS=4.20m BV=45.0 IBV=600u + CJO=2.25n M=0.333 N=1.11 TT=44.8n ) *SRC=PDS3100;DI_PDS3100;Diodes;Si; 100V 3.00A 10.0ns Diodes Inc. 3A HV Schottky Barrier Rectifier .MODEL DI_PDS3100 D ( IS=20.9u RS=13.9m BV=100 IBV=200u + CJO=305p M=0.333 N=1.70 TT=14.4n ) *DIODES_INC_SPICE_MODEL_PDS3200 *ORIGIN=DZSL_DPG_SU *SIMULATOR=PSPICE *DATE=30/06/2014 *VERSION=1 .MODEL PDS3200 D (IS=10E-9 RS=0.026 ISR=.1u BV=202.0 IBV=1u + CJO=500p M=0.4 VJ=.55 N=1 IKF=.09 EG=.95 XTI=1.5 TT=30n) * (c) 2014 Diodes Inc * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL * *SRC=PDS340;DI_PDS340;Diodes;Si; 40.0V 3.00A 13.0ns Diodes Inc. Schottky .MODEL DI_PDS340 D ( IS=2.59u RS=13.5m BV=40.0 IBV=500u + CJO=630p M=0.333 N=1.11 TT=18.7n ) * *Zetex PDS360 Spice Model v1.0 Last Revised 20/02/09 * .MODEL PDS360 D IS=0.7E-7 N=1.02 ISR=0.94E-7 NR=1.1 BV=63 IBV=2E-4 + NBV=2 IBVL=8E-8 NBVL=300 RS=0.034 CJO=390E-12 VJ=1.1 M=0.53 + EG=0.74 XTI=2 TRS1=4e-3 * *$ * * (c) 2009 Diodes Incorporated * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Diodes "). They are supplied * free of charge by Diodes for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Incorporated, 1566 N. Dallas Parkway, Suite 850, Dallas, TX 75248, USA *SRC=PDS4150;DI_PDS4150;Diodes;Si; 150V 4.00A 15.0ns Diodes Inc. 4A HV Schottky Barrier Rectifier .MODEL DI_PDS4150 D ( IS=19.2u RS=5.66m BV=150 IBV=10.0u + CJO=630p M=0.333 N=1.89 TT=21.6n ) *SRC=PDS5100;DI_PDS5100;Diodes;Si; 100V 5.00A 15.0ns Diodes Inc. 5A Schottky Barrier Rectifier .MODEL DI_PDS5100 D ( IS=49.0u RS=7.63m BV=100 IBV=200u + CJO=375p M=0.333 N=1.84 TT=21.6n ) *PDS5100H Spice Model v2.0 Last Revised 05/12/2014 Diodes Inc SCHOTTKY BARRIER RECTIFIER *SIMULATOR=SPICE3 .MODEL PDS5100H D ( IS=9.000n RS=18.00m BV=105.0 IBV=36.54u + CJO=836.0p M=450.0m N=970.0m TT=18.50n EG=800.0m VJ=450.0m XTI=1.500 ) * (c) 2014 Diodes Incorporated * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Diodes "). They are supplied * free of charge by Diodes for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Taiwan Inc.7F.,No. 50,Min-Chuan Road,Hsin-Tien District,New Taipei City 23141, Taiwan *SRC=PDS540;DI_PDS540;Diodes;Si; 40.0V 5.00A 15.0ns Diodes Inc. 5A Schottky Barrier Rectifier .MODEL DI_PDS540 D ( IS=9.59u RS=10.7m BV=40.0 IBV=300u + CJO=727p M=0.333 N=1.26 TT=21.6n ) *DIODES_INC_SPICE_MODEL_PDS560 *ORIGIN=DZSL_DPG_SU *SIMULATOR=PSPICE *DATE=4/08/2014 *VERSION=1 .MODEL PDS560 D (IS=18E-8 RS=0.018 ISR=20E-8 BV=60.0 IBV=1u + CJO=500p M=0.4 VJ=.4 N=.97 IKF=.35 EG=.69 XTI=1.5 NR=1.2 TT=20n) * (c) 2014 Diodes Inc * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL * * *Zetex PDS760 Spice Model v1.0 Last Revised 24/02/09 * .MODEL PDS760 D IS=2.1E-7 N=1.02 ISR=2.6E-7 NR=1.1 BV=63 IBV=2E-4 + NBV=2 IBVL=5.5E-7 NBVL=350 RS=0.016 CJO=1060E-12 VJ=1.1 M=0.53 + EG=0.74 XTI=2 TRS1=4e-3 * *$ * * (c) 2009 Diodes Incorporated * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Diodes "). They are supplied * free of charge by Diodes for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Incorporated, 1566 N. Dallas Parkway, Suite 850, Dallas, TX 75248, USA *SRC=PDS835L;DI_PDS835L;Diodes;Si; 35.0V 8.00A 15.0ns Diodes Inc. 8A Low VF Schottky Barrier Rectifier .MODEL DI_PDS835L D ( IS=42.9u RS=6.30m BV=35.0 IBV=1.40m + CJO=623p M=0.333 N=1.43 TT=21.6n ) *SRC=PDU340;DI_PDU340;Diodes;Si; 400V 3.00A 50.0ns Diodes Inc. Ultrafast Rectifier .MODEL DI_PDU340 D ( IS=3.74u RS=25.9m BV=400 IBV=10.0u + CJO=86.2p M=0.333 N=2.58 TT=72.0n ) *SRC=PDU420;DI_PDU420;Diodes;Si; 400V 4.00A 25.0ns Diodes Inc. ultrafast rectifier .MODEL DI_PDU420 D ( IS=189n RS=10.5m BV=400 IBV=5.00u + CJO=276p M=0.333 N=1.73 TT=36.0n ) *SRC=PDU540;DI_PDU540;Diodes;Si; 400V 5.00A 35.0ns Diodes Inc. Ultrafast Rectifier .MODEL DI_PDU540 D ( IS=2.68u RS=8.33m BV=400 IBV=10.0u + CJO=196p M=0.333 N=2.27 TT=50.4n ) *SRC=PDU620;DI_PDU620;Diodes;Si; 200V 6.00A 25.0ns Diodes Inc. Ultrafast Rectifier .MODEL DI_PDU620 D ( IS=190n RS=9.91m BV=200 IBV=5.00u + CJO=402p M=0.333 N=1.69 TT=36.0n ) *SRC=PDU620CT;DI_PDU620CT;Diodes;Si; 200V 3.00A 25.0ns Diodes Inc. Ultrafast Rectifier .MODEL DI_PDU620CT D ( IS=7.48n RS=19.5m BV=200 IBV=5.00u + CJO=223p M=0.333 N=1.42 TT=36.0n ) *SRC=RH02;DI_RH02;Diodes;Si; 200V 0.500A 150ns Diodes Inc. Fast Recovery Bridge Rectifier, per node .MODEL DI_RH02 D ( IS=2.25n RS=0.100 BV=200 IBV=5.00u + CJO=24.0p M=0.333 N=1.70 TT=216n ) *SRC=RH04;DI_RH04;Diodes;Si; 400V 0.500A 150ns Diodes Inc. Fast Recovery Bridge Rectifier, per node .MODEL DI_RH04 D ( IS=2.25n RS=0.100 BV=400 IBV=5.00u + CJO=24.0p M=0.333 N=1.70 TT=216n ) *SRC=RH06;DI_RH06;Diodes;Si; 600V 0.500A 250ns Diodes Inc. Fast Recovery Bridge Rectifier, per node .MODEL DI_RH06 D ( IS=2.25n RS=0.100 BV=600 IBV=5.00u + CJO=24.0p M=0.333 N=1.70 TT=360n ) *SRC=RS1A;DI_RS1A;Diodes;Si; 50.0V 1.00A 150ns Diodes Inc. Fast Rectifier .MODEL DI_RS1A D ( IS=948n RS=81.3m BV=50.0 IBV=5.00u + CJO=27.7p M=0.333 N=2.48 TT=216n ) ************************************************************************************************************************************* *SRC=RS1AB;DI_RS1AB;Diodes;Si; 50.0V 1.00A 150ns Diodes Inc. Fast Rectifier .MODEL DI_RS1AB D ( IS=948n RS=81.3m BV=50.0 IBV=5.00u + CJO=27.7p M=0.333 N=2.48 TT=216n ) ************************************************************************************************************************************* *SRC=RS1B;DI_RS1B;Diodes;Si; 100V 1.00A 150ns Diodes Inc. Fast Rectifier .MODEL DI_RS1B D ( IS=948n RS=81.3m BV=100 IBV=5.00u + CJO=27.7p M=0.333 N=2.48 TT=216n ) ************************************************************************************************************************************** *SRC=RS1BB;DI_RS1BB;Diodes;Si; 100V 1.00A 150ns Diodes Inc. Fast Rectifier .MODEL DI_RS1BB D ( IS=948n RS=81.3m BV=100 IBV=5.00u + CJO=27.7p M=0.333 N=2.48 TT=216n ) ************************************************************************************************************************************** *SRC=RS1D;DI_RS1D;Diodes;Si; 200V 1.00A 150ns Diodes Inc. Fast Rectifier .MODEL DI_RS1D D ( IS=948n RS=81.3m BV=200 IBV=5.00u + CJO=27.7p M=0.333 N=2.48 TT=216n ) ************************************************************************************************************************************** *SRC=RS1DB;DI_RS1DB;Diodes;Si; 200V 1.00A 150ns Diodes Inc. Fast Rectifier .MODEL DI_RS1DB D ( IS=948n RS=81.3m BV=200 IBV=5.00u + CJO=27.7p M=0.333 N=2.48 TT=216n ) ************************************************************************************************************************************** *SRC=RS1G;DI_RS1G;Diodes;Si; 400V 1.00A 150ns Diodes Inc. Fast Rectifier .MODEL DI_RS1G D ( IS=948n RS=81.3m BV=400 IBV=5.00u + CJO=27.7p M=0.333 N=2.48 TT=216n ) ************************************************************************************************************************************** *SRC=RS1GB;DI_RS1GB;Diodes;Si; 400V 1.00A 150ns Diodes Inc. Fast Rectifier .MODEL DI_RS1GB D ( IS=948n RS=81.3m BV=400 IBV=5.00u + CJO=27.7p M=0.333 N=2.48 TT=216n ) ************************************************************************************************************************************** *SRC=RS1J;DI_RS1J;Diodes;Si; 600V 1.00A 250ns Diodes Inc. Fast Rectifier .MODEL DI_RS1J D ( IS=948n RS=81.3m BV=600 IBV=5.00u + CJO=27.7p M=0.333 N=2.48 TT=360n ) ************************************************************************************************************************************** *SRC=RS1JB;DI_RS1JB;Diodes;Si; 600V 1.00A 250ns Diodes Inc. Fast Rectifier .MODEL DI_RS1JB D ( IS=948n RS=81.3m BV=600 IBV=5.00u + CJO=27.7p M=0.333 N=2.48 TT=360n ) ************************************************************************************************************************************** *SRC=RS1K;DI_RS1K;Diodes;Si; 800V 1.00A 500ns Diodes Inc. Fast Rectifier .MODEL DI_RS1K D ( IS=948n RS=81.3m BV=800 IBV=5.00u + CJO=27.7p M=0.333 N=2.48 TT=720n ) ************************************************************************************************************************************** *SRC=RS1KB;DI_RS1KB;Diodes;Si; 800V 1.00A 500ns Diodes Inc. Fast Rectifier .MODEL DI_RS1KB D ( IS=948n RS=81.3m BV=800 IBV=5.00u + CJO=27.7p M=0.333 N=2.48 TT=720n ) ************************************************************************************************************************************** *SRC=RS1M;DI_RS1M;Diodes;Si; 1.00kV 1.00A 500ns Diodes Inc. Fast Rectifier .MODEL DI_RS1M D ( IS=948n RS=81.3m BV=1.00k IBV=5.00u + CJO=27.7p M=0.333 N=2.48 TT=720n ) ************************************************************************************************************************************** *SRC=RS1MB;DI_RS1MB;Diodes;Si; 1.00kV 1.00A 500ns Diodes Inc. Fast Rectifier .MODEL DI_RS1MB D ( IS=948n RS=81.3m BV=1.00k IBV=5.00u + CJO=27.7p M=0.333 N=2.48 TT=720n ) ************************************************************************************************************************************** *SIMULATOR=SIMETRIX *ORIGIN=DZSL_DPG_SU *DATE=25Aug2016 *VERSION=1 .SUBCKT RS1MWF 1 2 D1 1 2 DF D2 1 2 DR .MODEL DF D ( IS=5p RS=.041 BV=1000 IKF=80u CJO=15p M=0.35 VJ=.65 N=1 TT=460n EG=.7 TRS1=0.01m XTI=15) .model DR D (N=10 ISR=6.5n BV=1010 IBV=100u EG=.8 RS=2 CJO=1p VJ=.65) .ENDS * (c) 2016 Diodes Inc * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL *SRC=RS2A;DI_RS2A;Diodes;Si; 50.0V 1.50A 150ns Diodes Inc. Fast Rectifier .MODEL DI_RS2A D ( IS=169u RS=4.81m BV=50.0 IBV=5.00u + CJO=55.5p M=0.333 N=6.02 TT=216n ) ****************************************************************************************************** *SRC=RS2AA;DI_RS2AA;Diodes;Si; 50.0V 1.50A 150ns Diodes Inc. Fast Rectifier .MODEL DI_RS2AA D ( IS=169u RS=4.81m BV=50.0 IBV=5.00u + CJO=55.5p M=0.333 N=6.02 TT=216n ) ****************************************************************************************************** *SRC=RS2B;DI_RS2B;Diodes;Si; 100V 1.50A 150ns Diodes Inc. Fast Rectifier .MODEL DI_RS2B D ( IS=169u RS=4.81m BV=100 IBV=5.00u + CJO=55.5p M=0.333 N=6.02 TT=216n ) ****************************************************************************************************** *SRC=RS2BA;DI_RS2BA;Diodes;Si; 100V 1.50A 150ns Diodes Inc. Fast Rectifier .MODEL DI_RS2BA D ( IS=169u RS=4.81m BV=100 IBV=5.00u + CJO=55.5p M=0.333 N=6.02 TT=216n ) ****************************************************************************************************** *SRC=RS2D;DI_RS2D;Diodes;Si; 200V 1.50A 150ns Diodes Inc. Fast Rectifier .MODEL DI_RS2D D ( IS=169u RS=4.81m BV=200 IBV=5.00u + CJO=55.5p M=0.333 N=6.02 TT=216n ) ****************************************************************************************************** *SRC=RS2DA;DI_RS2DA;Diodes;Si; 200V 1.50A 150ns Diodes Inc. Fast Rectifier .MODEL DI_RS2DA D ( IS=169u RS=4.81m BV=200 IBV=5.00u + CJO=55.5p M=0.333 N=6.02 TT=216n ) ****************************************************************************************************** *SRC=RS2G;DI_RS2G;Diodes;Si; 400V 1.50A 150ns Diodes Inc. Fast Rectifier .MODEL DI_RS2G D ( IS=169u RS=4.81m BV=400 IBV=5.00u + CJO=55.5p M=0.333 N=6.02 TT=216n ) ****************************************************************************************************** *SRC=RS2GA;DI_RS2GA;Diodes;Si; 400V 1.50A 150ns Diodes Inc. Fast Rectifier .MODEL DI_RS2GA D ( IS=169u RS=4.81m BV=400 IBV=5.00u + CJO=55.5p M=0.333 N=6.02 TT=216n ) ****************************************************************************************************** *SRC=RS2J;DI_RS2J;Diodes;Si; 600V 1.50A 250ns Diodes Inc. Fast Rectifier .MODEL DI_RS2J D ( IS=169u RS=4.81m BV=600 IBV=5.00u + CJO=55.5p M=0.333 N=6.02 TT=360n ) ****************************************************************************************************** *SRC=RS2JA;DI_RS2JA;Diodes;Si; 600V 1.50A 250ns Diodes Inc. Fast Rectifier .MODEL DI_RS2JA D ( IS=169u RS=4.81m BV=600 IBV=5.00u + CJO=55.5p M=0.333 N=6.02 TT=360n ) ****************************************************************************************************** *SRC=RS2K;DI_RS2K;Diodes;Si; 800V 1.50A 500ns Diodes Inc. Fast Rectifier .MODEL DI_RS2K D ( IS=169u RS=4.81m BV=800 IBV=5.00u + CJO=55.5p M=0.333 N=6.02 TT=720n ) ****************************************************************************************************** *SRC=RS2KA;DI_RS2KA;Diodes;Si; 800V 1.50A 500ns Diodes Inc. Fast Rectifier .MODEL DI_RS2KA D ( IS=169u RS=4.81m BV=800 IBV=5.00u + CJO=55.5p M=0.333 N=6.02 TT=720n ) ****************************************************************************************************** *SRC=RS2M;DI_RS2M;Diodes;Si; 1.00kV 1.50A 500ns Diodes Inc. Fast Rectifier .MODEL DI_RS2M D ( IS=169u RS=4.81m BV=1.00k IBV=5.00u + CJO=55.5p M=0.333 N=6.02 TT=720n ) ****************************************************************************************************** *SRC=RS2MA;DI_RS2MA;Diodes;Si; 1.00kV 1.50A 500ns Diodes Inc. Fast Rectifier .MODEL DI_RS2MA D ( IS=169u RS=4.81m BV=1.00k IBV=5.00u + CJO=55.5p M=0.333 N=6.02 TT=720n ) ****************************************************************************************************** *SRC=RS3A;DI_RS3A;Diodes;Si; 50.0V 3.00A 150ns Diodes Inc. Fast Rectifier .MODEL DI_RS3A D ( IS=200n RS=25.4m BV=50.0 IBV=5.00u + CJO=92.5p M=0.333 N=2.23 TT=216n ) ********************************************************************************************************** *SRC=RS3AB;DI_RS3AB;Diodes;Si; 50.0V 3.00A 150ns Diodes Inc. Fast Rectifier .MODEL DI_RS3AB D ( IS=200n RS=25.4m BV=50.0 IBV=5.00u + CJO=92.5p M=0.333 N=2.23 TT=216n ) ********************************************************************************************************** *SRC=RS3B;DI_RS3B;Diodes;Si; 100V 3.00A 150ns Diodes Inc. Fast Rectifier .MODEL DI_RS3B D ( IS=200n RS=25.4m BV=100 IBV=5.00u + CJO=92.5p M=0.333 N=2.23 TT=216n ) ********************************************************************************************************** *SRC=RS3BB;DI_RS3BB;Diodes;Si; 100V 3.00A 150ns Diodes Inc. Fast Rectifier .MODEL DI_RS3BB D ( IS=200n RS=25.4m BV=100 IBV=5.00u + CJO=92.5p M=0.333 N=2.23 TT=216n ) ********************************************************************************************************** *SRC=RS3D;DI_RS3D;Diodes;Si; 200V 3.00A 150ns Diodes Inc. Fast Rectifier .MODEL DI_RS3D D ( IS=200n RS=25.4m BV=200 IBV=5.00u + CJO=92.5p M=0.333 N=2.23 TT=216n ) ********************************************************************************************************** *SRC=RS3DB;DI_RS3DB;Diodes;Si; 200V 3.00A 150ns Diodes Inc. Fast Rectifier .MODEL DI_RS3DB D ( IS=200n RS=25.4m BV=200 IBV=5.00u + CJO=92.5p M=0.333 N=2.23 TT=216n ) ********************************************************************************************************** *SRC=RS3G;DI_RS3G;Diodes;Si; 400V 3.00A 150ns Diodes Inc. Fast Rectifier .MODEL DI_RS3G D ( IS=200n RS=25.4m BV=400 IBV=5.00u + CJO=92.5p M=0.333 N=2.23 TT=216n ) ********************************************************************************************************** *SRC=RS3GB;DI_RS3GB;Diodes;Si; 400V 3.00A 150ns Diodes Inc. Fast Rectifier .MODEL DI_RS3GB D ( IS=200n RS=25.4m BV=400 IBV=5.00u + CJO=92.5p M=0.333 N=2.23 TT=216n ) ********************************************************************************************************** *SRC=RS3J;DI_RS3J;Diodes;Si; 600V 3.00A 250ns Diodes Inc. Fast Rectifier .MODEL DI_RS3J D ( IS=200n RS=25.4m BV=600 IBV=5.00u + CJO=92.5p M=0.333 N=2.23 TT=360n ) ********************************************************************************************************** *SRC=RS3JB;DI_RS3JB;Diodes;Si; 600V 3.00A 250ns Diodes Inc. Fast Rectifier .MODEL DI_RS3JB D ( IS=200n RS=25.4m BV=600 IBV=5.00u + CJO=92.5p M=0.333 N=2.23 TT=360n ) ********************************************************************************************************** *SRC=RS3K;DI_RS3K;Diodes;Si; 800V 3.00A 500ns Diodes Inc. Fast Rectifier .MODEL DI_RS3K D ( IS=200n RS=25.4m BV=800 IBV=5.00u + CJO=92.5p M=0.333 N=2.23 TT=720n ) *********************************************************************************************************** *SRC=RS3KB;DI_RS3KB;Diodes;Si; 800V 3.00A 500ns Diodes Inc. Fast Rectifier .MODEL DI_RS3KB D ( IS=200n RS=25.4m BV=800 IBV=5.00u + CJO=92.5p M=0.333 N=2.23 TT=720n ) *********************************************************************************************************** *SRC=RS3M;DI_RS3M;Diodes;Si; 1.00kV 3.00A 500ns Diodes Inc. Fast Rectifier .MODEL DI_RS3M D ( IS=200n RS=25.4m BV=1.00k IBV=5.00u + CJO=92.5p M=0.333 N=2.23 TT=720n ) *********************************************************************************************************** *SRC=RS3MB;DI_RS3MB;Diodes;Si; 1.00kV 3.00A 500ns Diodes Inc. Fast Rectifier .MODEL DI_RS3MB D ( IS=200n RS=25.4m BV=1.00k IBV=5.00u + CJO=92.5p M=0.333 N=2.23 TT=720n ) *********************************************************************************************************** *SRC=S1A;DI_S1A;Diodes;Si; 50.0V 1.00A 3.00us Diodes Inc. Rectifier .MODEL DI_S1A D ( IS=7.31e-018 RS=42.0m BV=50.0 IBV=5.00u + CJO=42.4p M=0.333 N=0.775 TT=4.32u ) *SRC=S1AB;DI_S1AB;Diodes;Si; 50.0V 1.00A 3.00us Diodes Inc. Rectifier .MODEL DI_S1AB D ( IS=7.31e-018 RS=42.0m BV=50.0 IBV=5.00u + CJO=42.4p M=0.333 N=0.775 TT=4.32u ) *SRC=S1B;DI_S1B;Diodes;Si; 100V 1.00A 3.00us Diodes Inc. Rectifier .MODEL DI_S1B D ( IS=7.31e-018 RS=42.0m BV=100 IBV=5.00u + CJO=42.4p M=0.333 N=0.775 TT=4.32u ) *SRC=S1BB;DI_S1BB;Diodes;Si; 100V 1.00A 3.00us Diodes Inc. Rectifier .MODEL DI_S1BB D ( IS=7.31e-018 RS=42.0m BV=100 IBV=5.00u + CJO=42.4p M=0.333 N=0.775 TT=4.32u ) *SRC=S1D;DI_S1D;Diodes;Si; 200V 1.00A 3.00us Diodes Inc. Rectifier .MODEL DI_S1D D ( IS=7.31e-018 RS=42.0m BV=200 IBV=5.00u + CJO=42.4p M=0.333 N=0.775 TT=4.32u ) *SRC=S1DB;DI_S1DB;Diodes;Si; 200V 1.00A 3.00us Diodes Inc. Rectifier .MODEL DI_S1DB D ( IS=7.31e-018 RS=42.0m BV=200 IBV=5.00u + CJO=42.4p M=0.333 N=0.775 TT=4.32u ) *TITLE=S1G-13-F *DATE=19/11/2013 *ORIGIN=DZSL_DPG_SU *SIMULATOR=SIMETRIX *VERSION=1 .model S1G-13-F D(IS=.0005n RS=0.03 CJO=17p M=0.5 VJ=0.75 N=1.1 IKF=.15 ISR=.01u + BV=401 IBV=100u TT=150n EG=.95 TRS1=.1m) * (c) 2013 Diodes Inc * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL *SRC=S1GB;DI_S1GB;Diodes;Si; 400V 1.00A 3.00us Diodes Inc. Rectifier .MODEL DI_S1GB D ( IS=7.31e-018 RS=42.0m BV=400 IBV=5.00u + CJO=42.4p M=0.333 N=0.775 TT=4.32u ) *SRC=S1J;DI_S1J;Diodes;Si; 600V 1.00A 3.00us Diodes Inc. Rectifier .MODEL DI_S1J D ( IS=7.31e-018 RS=42.0m BV=600 IBV=5.00u + CJO=42.4p M=0.333 N=0.775 TT=4.32u ) *SRC=S1JB;DI_S1JB;Diodes;Si; 600V 1.00A 3.00us Diodes Inc. Rectifier .MODEL DI_S1JB D ( IS=7.31e-018 RS=42.0m BV=600 IBV=5.00u + CJO=42.4p M=0.333 N=0.775 TT=4.32u ) *SRC=S1K;DI_S1K;Diodes;Si; 800V 1.00A 3.00us Diodes Inc. Rectifier .MODEL DI_S1K D ( IS=7.31e-018 RS=42.0m BV=800 IBV=5.00u + CJO=42.4p M=0.333 N=0.775 TT=4.32u ) *SRC=S1KB;DI_S1KB;Diodes;Si; 800V 1.00A 3.00us Diodes Inc. Rectifier .MODEL DI_S1KB D ( IS=7.31e-018 RS=42.0m BV=800 IBV=5.00u + CJO=42.4p M=0.333 N=0.775 TT=4.32u ) *SRC=S1M;DI_S1M;Diodes;Si; 1.00kV 1.00A 3.00us Diodes Inc. Rectifier .MODEL DI_S1M D ( IS=7.31e-018 RS=42.0m BV=1.00k IBV=5.00u + CJO=42.4p M=0.333 N=0.775 TT=4.32u ) *SRC=S1MB;DI_S1MB;Diodes;Si; 1.00kV 1.00A 3.00us Diodes Inc. Rectifier .MODEL DI_S1MB D ( IS=7.31e-018 RS=42.0m BV=1.00k IBV=5.00u + CJO=42.4p M=0.333 N=0.775 TT=4.32u ) *---------- S1MSWFQ Spice Model ---------- .SUBCKT S1MSWFQ 1 2 * TERMINALS: Anode Cathode D1 1 2 + D1 R1 1 2 3.216E+09 .MODEL D1 D + IS = 4.749E-10 N = 1.667 RS = 0.05177 + CJO = 1.611E-11 VJ = 0.2047 M = 0.2938 + FC = 0.5 + BV = 1174 IBV = 4.441E-10 .ENDS *Diodes_TGI S1MSWFQ Spice Model v1.0 Last Revised 2019/06/12 *SRC=S2A;DI_S2A;Diodes;Si; 50.0V 1.50A 3.00us Diodes Inc. .MODEL DI_S2A D ( IS=1.30u RS=8.92m BV=50.0 IBV=5.00u + CJO=37.0p M=0.333 N=2.58 TT=4.32u ) *SRC=S2AA;DI_S2AA;Diodes;Si; 50.0V 1.50A 3.00us Diodes Inc. .MODEL DI_S2AA D ( IS=1.30u RS=8.92m BV=50.0 IBV=5.00u + CJO=37.0p M=0.333 N=2.58 TT=4.32u ) *SRC=S2B;DI_S2B;Diodes;Si; 100V 1.50A 3.00us Diodes Inc. .MODEL DI_S2B D ( IS=1.30u RS=8.92m BV=100 IBV=5.00u + CJO=37.0p M=0.333 N=2.58 TT=4.32u ) *SRC=S2BA;DI_S2BA;Diodes;Si; 100V 1.50A 3.00us Diodes Inc. .MODEL DI_S2BA D ( IS=1.30u RS=8.92m BV=100 IBV=5.00u + CJO=37.0p M=0.333 N=2.58 TT=4.32u ) *SRC=S2D;DI_S2D;Diodes;Si; 200V 1.50A 3.00us Diodes Inc. .MODEL DI_S2D D ( IS=1.30u RS=8.92m BV=200 IBV=5.00u + CJO=37.0p M=0.333 N=2.58 TT=4.32u ) *SRC=S2DA;DI_S2DA;Diodes;Si; 200V 1.50A 3.00us Diodes Inc. .MODEL DI_S2DA D ( IS=1.30u RS=8.92m BV=200 IBV=5.00u + CJO=37.0p M=0.333 N=2.58 TT=4.32u ) *SRC=S2G;DI_S2G;Diodes;Si; 400V 1.50A 3.00us Diodes Inc. .MODEL DI_S2G D ( IS=1.30u RS=8.92m BV=400 IBV=5.00u + CJO=37.0p M=0.333 N=2.58 TT=4.32u ) *SRC=S2GA;DI_S2GA;Diodes;Si; 400V 1.50A 3.00us Diodes Inc. .MODEL DI_S2GA D ( IS=1.30u RS=8.92m BV=400 IBV=5.00u + CJO=37.0p M=0.333 N=2.58 TT=4.32u ) *SRC=S2J;DI_S2J;Diodes;Si; 600V 1.50A 3.00us Diodes Inc. .MODEL DI_S2J D ( IS=1.30u RS=8.92m BV=600 IBV=5.00u + CJO=37.0p M=0.333 N=2.58 TT=4.32u ) *SRC=S2JA;DI_S2JA;Diodes;Si; 600V 1.50A 3.00us Diodes Inc. .MODEL DI_S2JA D ( IS=1.30u RS=8.92m BV=600 IBV=5.00u + CJO=37.0p M=0.333 N=2.58 TT=4.32u ) *SRC=S2K;DI_S2K;Diodes;Si; 800V 1.50A 3.00us Diodes Inc. .MODEL DI_S2K D ( IS=1.30u RS=8.92m BV=800 IBV=5.00u + CJO=37.0p M=0.333 N=2.58 TT=4.32u ) *SRC=S2KA;DI_S2KA;Diodes;Si; 800V 1.50A 3.00us Diodes Inc. .MODEL DI_S2KA D ( IS=1.30u RS=8.92m BV=800 IBV=5.00u + CJO=37.0p M=0.333 N=2.58 TT=4.32u ) *SRC=S2M;DI_S2M;Diodes;Si; 1.00kV 1.50A 3.00us Diodes Inc. .MODEL DI_S2M D ( IS=1.30u RS=8.92m BV=1.00k IBV=5.00u + CJO=37.0p M=0.333 N=2.58 TT=4.32u ) *SRC=S2MA;DI_S2MA;Diodes;Si; 1.00kV 1.50A 3.00us Diodes Inc. .MODEL DI_S2MA D ( IS=1.30u RS=8.92m BV=1.00k IBV=5.00u + CJO=37.0p M=0.333 N=2.58 TT=4.32u ) *SRC=S3A;DI_S3A;Diodes;Si; 50.0V 3.00A 3.00us Diodes Inc. - .MODEL DI_S3A D ( IS=1.37n RS=14.0m BV=50.0 IBV=10.0u + CJO=74.0p M=0.333 N=1.70 TT=4.32u ) *SRC=S3A;DI_S3A;Diodes;Si; 50.0V 3.00A 3.00us Diodes Inc. - .MODEL DI_S3A D ( IS=1.37n RS=14.0m BV=50.0 IBV=10.0u + CJO=74.0p M=0.333 N=1.70 TT=4.32u ) *SRC=S3BB;S3BB;Diodes;Si; 100V 3.00A 3.00us Diodes Inc. - .MODEL S3BB D ( IS=1.37n RS=14.0m BV=100 IBV=10.0u + CJO=74.0p M=0.333 N=1.70 TT=4.32u ) *SRC=S3BB;S3BB;Diodes;Si; 100V 3.00A 3.00us Diodes Inc. - .MODEL S3BB D ( IS=1.37n RS=14.0m BV=100 IBV=10.0u + CJO=74.0p M=0.333 N=1.70 TT=4.32u ) *SRC=S3D;DI_S3D;Diodes;Si; 200V 3.00A 3.00us Diodes Inc. - .MODEL DI_S3D D ( IS=1.37n RS=14.0m BV=200 IBV=10.0u + CJO=74.0p M=0.333 N=1.70 TT=4.32u ) *SRC=S3DB;DI_S3DB;Diodes;Si; 200V 3.00A 3.00us Diodes Inc. - .MODEL DI_S3DB D ( IS=1.37n RS=14.0m BV=200 IBV=10.0u + CJO=74.0p M=0.333 N=1.70 TT=4.32u ) *SRC=S3GB;DI_S3GB;Diodes;Si; 400V 3.00A 3.00us Diodes Inc. - .MODEL DI_S3GB D ( IS=1.37n RS=14.0m BV=400 IBV=10.0u + CJO=74.0p M=0.333 N=1.70 TT=4.32u ) *SRC=S3GB;DI_S3GB;Diodes;Si; 400V 3.00A 3.00us Diodes Inc. - .MODEL DI_S3GB D ( IS=1.37n RS=14.0m BV=400 IBV=10.0u + CJO=74.0p M=0.333 N=1.70 TT=4.32u ) *SRC=S3K;DI_S3K;Diodes;Si; 800V 3.00A 3.00us Diodes Inc. - .MODEL DI_S3K D ( IS=1.37n RS=14.0m BV=800 IBV=10.0u + CJO=74.0p M=0.333 N=1.70 TT=4.32u ) *SRC=S3K;DI_S3K;Diodes;Si; 800V 3.00A 3.00us Diodes Inc. - .MODEL DI_S3K D ( IS=1.37n RS=14.0m BV=800 IBV=10.0u + CJO=74.0p M=0.333 N=1.70 TT=4.32u ) *SRC=S3M;DI_S3M;Diodes;Si; 1.00kV 3.00A 3.00us Diodes Inc. - .MODEL DI_S3M D ( IS=1.37n RS=14.0m BV=1.00k IBV=10.0u + CJO=74.0p M=0.333 N=1.70 TT=4.32u ) *SRC=S3M;DI_S3M;Diodes;Si; 1.00kV 3.00A 3.00us Diodes Inc. - .MODEL DI_S3M D ( IS=1.37n RS=14.0m BV=1.00k IBV=10.0u + CJO=74.0p M=0.333 N=1.70 TT=4.32u ) *SRC=S5AC;DI_S5AC;Diodes;Si; 50.0V 5.00A 2.00us Diodes Inc. - .MODEL DI_S5AC D ( IS=2.28n RS=8.40m BV=50.0 IBV=10.0u + CJO=74.0p M=0.333 N=1.70 TT=2.88u ) *SRC=S5BC;DI_S5BC;Diodes;Si; 100V 5.00A 2.00us Diodes Inc. - .MODEL DI_S5BC D ( IS=2.28n RS=8.40m BV=100 IBV=10.0u + CJO=74.0p M=0.333 N=1.70 TT=2.88u ) *SRC=S5DC;DI_S5DC;Diodes;Si; 200V 5.00A 2.00us Diodes Inc. - .MODEL DI_S5DC D ( IS=2.28n RS=8.40m BV=200 IBV=10.0u + CJO=74.0p M=0.333 N=1.70 TT=2.88u ) *SRC=S5GC;DI_S5GC;Diodes;Si; 400V 5.00A 2.00us Diodes Inc. .MODEL DI_S5GC D ( IS=2.28n RS=8.40m BV=400 IBV=10.0u + CJO=74.0p M=0.333 N=1.70 TT=2.88u ) *SRC=S5JC;DI_S5JC;Diodes;Si; 600V 5.00A 2.00us Diodes Inc. - .MODEL DI_S5JC D ( IS=2.28n RS=8.40m BV=600 IBV=10.0u + CJO=74.0p M=0.333 N=1.70 TT=2.88u ) *SRC=S5KC;DI_S5KC;Diodes;Si; 800V 5.00A 2.00us Diodes Inc. - .MODEL DI_S5KC D ( IS=2.28n RS=8.40m BV=800 IBV=10.0u + CJO=74.0p M=0.333 N=1.70 TT=2.88u ) *SRC=S5MC;DI_S5MC;Diodes;Si; 1.00kV 5.00A 2.00us Diodes Inc. - .MODEL DI_S5MC D ( IS=2.28n RS=8.40m BV=1.00k IBV=10.0u + CJO=74.0p M=0.333 N=1.70 TT=2.88u ) *SRC=S8KC;S8KC;Diodes;Si; 800V 8.00A 3.00us Diodes Inc .MODEL S8KC D ( IS=777n RS=8.87m BV=800 IBV=10.0u + CJO=74.0p M=0.333 N=1.65 TT=4.32u ) *SRC=S8MC;S8MC;Diodes;Si; 1.00kV 8.00A 3.00us Diodes Inc .MODEL S8MC D ( IS=777n RS=8.87m BV=1.00k IBV=10.0u + CJO=74.0 M=0.333 N=1.65 TT=4.32u *SRC=SB1100;DI_SB1100;Diodes;Si; 100.0V 1.00A 5.00ns Diodes Inc. Schottky .MODEL DI_SB1100 D ( IS=6.63u RS=62.3m BV=100.0 IBV=500u + CJO=199p M=0.333 N=1.70 TT=7.20n ) *SRC=SB130;DI_SB130;Diodes;Si; 30.0V 1.00A 5.00ns Diodes Inc. Schottky .MODEL DI_SB130 D ( IS=31.5u RS=49.2m BV=30.0 IBV=500u + CJO=239p M=0.333 N=1.70 TT=7.20n ) *SRC=SB140;DI_SB140;Diodes;Si; 40.0V 1.00A 5.00ns Diodes Inc. Schottky .MODEL DI_SB140 D ( IS=31.5u RS=49.2m BV=40.0 IBV=500u + CJO=239p M=0.333 N=1.70 TT=7.20n ) *SRC=SB150;DI_SB150;Diodes;Si; 50.0V 1.00A 5.00ns Diodes Inc. Schottky .MODEL DI_SB150 D ( IS=1.17u RS=42.0m BV=50.0 IBV=500u + CJO=172p M=0.333 N=1.28 TT=7.20n ) *SRC=SB160;DI_SB160;Diodes;Si; 60.0V 1.00A 5.00ns Diodes Inc. Schottky .MODEL DI_SB160 D ( IS=1.17u RS=42.0m BV=60.0 IBV=500u + CJO=172p M=0.333 N=1.28 TT=7.20n ) *SRC=SB180;DI_SB180;Diodes;Si; 80.0V 1.00A 5.00ns Diodes Inc. Schottky .MODEL DI_SB180 D ( IS=6.63u RS=62.3m BV=80.0 IBV=500u + CJO=199p M=0.333 N=1.70 TT=7.20n ) *SRC=SB190;DI_SB190;Diodes;Si; 90.0V 1.00A 5.00ns Diodes Inc. Schottky .MODEL DI_SB190 D ( IS=6.63u RS=62.3m BV=90.0 IBV=500u + CJO=199p M=0.333 N=1.70 TT=7.20n ) *SRC=SBL1630PT;DI_SBL1630PT;Diodes;Si; 30.0V 16.0A 5.00ns Diodes Inc. Schottky - Single device of dual .MODEL DI_SBL1630PT D ( IS=575u RS=3.47m BV=30.0 IBV=500u + CJO=1.86n M=0.333 N=1.68 TT=7.20n ) *SRC=SBL1635PT;DI_SBL1635PT;Diodes;Si; 35.0V 16.0A 5.00ns Diodes Inc. Schottky - Single device of dual .MODEL DI_SBL1635PT D ( IS=575u RS=3.47m BV=35.0 IBV=500u + CJO=1.86n M=0.333 N=1.68 TT=7.20n ) *SRC=SBL1645PT;DI_SBL1645PT;Diodes;Si; 45.0V 16.0A 5.00ns Diodes Inc. Schottky - Single device of dual .MODEL DI_SBL1645PT D ( IS=575u RS=3.47m BV=45.0 IBV=500u + CJO=1.86n M=0.333 N=1.68 TT=7.20n ) *SRC=SBL1660PT;DI_SBL1660PT;Diodes;Si; 60.0V 16.0A 5.00ns Diodes Inc. Schottky - Single device of dual .MODEL DI_SBL1660PT D ( IS=89.9u RS=3.60m BV=60.0 IBV=500u + CJO=1.86n M=0.333 N=1.67 TT=7.20n ) *SRC=SBL535;DI_SBL535;Diodes;Si; 35.0V 5.00A 10.0ns Diodes Inc. Schottky .MODEL DI_SBL535 D ( IS=926u RS=9.47m BV=35.0 IBV=500u + CJO=968p M=0.333 N=1.69 TT=14.4n ) *SRC=SBL550;DI_SBL550;Diodes;Si; 50.0V 5.00A 10.0ns Diodes Inc. Schottky .MODEL DI_SBL550 D ( IS=14.0u RS=8.33m BV=50.0 IBV=500u + CJO=968p M=0.333 N=1.70 TT=14.4n ) *SRC=SBL560;DI_SBL560;Diodes;Si; 60.0V 5.00A 10.0ns Diodes Inc. Schottky .MODEL DI_SBL560 D ( IS=14.0u RS=8.33m BV=60.0 IBV=500u + CJO=968p M=0.333 N=1.70 TT=14.4n ) *SRC=SBL6050PT;DI_SBL6050PT;Diodes;Si; 50.0V 60.0A 10.0ns Diodes Inc. Schottky - Single device of dual .MODEL DI_SBL6050PT D ( IS=353u RS=909u BV=50.0 IBV=20.0m + CJO=3.25n M=0.333 N=1.76 TT=14.4n ) *SBR0230T5 Spice Model v1.0 Last Revised 1/12/2016 Diodes Inc SUPER BARRIER RECTIFIER SIMULATOR=SPICE3 .MODEL DI_SDM02U30LP3 D ( IS=54.13n RS=378.1m BV=50.00 IBV=10.00 + CJO=237.7p M=526.0m N=1.032 TT=10.00n EG=480.0m VJ=12.71m ) * (c) 2015 Diodes Incorporated * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Diodes "). They are supplied * free of charge by Diodes for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Taiwan Inc.7F.,No. 50,Min-Chuan Road,Hsin-Tien District,New Taipei City 23141, Taiwan *SBR02M30LP Spice Model v1.0 Last Revised 1/20/2017 Diodes Inc SUPER BARRIER RECTIFIER SIMULATOR=SPICE3 .MODEL DI_SBR02M30LP D ( IS=87.49n RS=387.2m BV=35.00 IBV=1.000m + CJO=59.00p M=110.0k N=1.045 TT=20.00n EG=480.0m VJ=1.100 ) * (c) 2015 Diodes Incorporated * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Diodes "). They are supplied * free of charge by Diodes for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Taiwan Inc.7F.,No. 50,Min-Chuan Road,Hsin-Tien District,New Taipei City 23141, Taiwan .MODEL SBR02U100LP D ( + IS=37.999E-9 + N=1.2423 + RS=1.0042 + IKF=6.4683E-3 + CJO=138.07E-12 + M=1.4985 + VJ=.79033 + ISR=7.0384E-12 + NR=4.9950 + BV=103 + IBV=1.0000E-3 + XTI=2.67 ) *SBR0330CW Spice Model v1.0 Last Revised 9/29/2020 Diodes Inc SUPER BARRIER RECTIFIER SIMULATOR=SPICE3 .MODEL DI_SBR0330CW D ( IS=581.5n RS=527.7m BV=34.00 IBV=10.00 + CJO=180.0p M=610.0m N=1.119 TT=15.00n EG=480.0m VJ=50.00m ) *SBR0560S1 Spice Model v1.0 Last Revised 5/24/2022 Diodes Inc SUPER BARRIER RECTIFIER SIMULATOR=SPICE3 .MODEL DI_SBR0560S1 D ( IS=2.051u RS=136.4m BV=66.0 IBV=10.00 + CJO=810.0p M=569.3m N=1.063 TT=7.792n EG=480.0m VJ=35.54m ) *SBR10U200P5 Spice Model v1.0 Last Revised 2/24/2015 Diodes Inc SUPER BARRIER RECTIFIER SIMULATOR=SPICE3 .MODEL DI_SBR10U200P5 D ( IS=35.49n RS=15.06m BV=220.0 IBV=10.00 + CJO=1.190n M=412.1m N=1.366 TT=21.70n EG=480.0m VJ=61.27m ) * (c) 2015 Diodes Incorporated * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Diodes "). They are supplied * free of charge by Diodes for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Taiwan Inc.7F.,No. 50,Min-Chuan Road,Hsin-Tien District,New Taipei City 23141, Taiwan *SRC=SBR10U40CT;DI_SBR10U40CT;Diodes;Si; 40.0V 5.00A 35.0ns Diodes INC SBR rectifier .MODEL DI_SBR10U40CT D ( IS=6.83m RS=6.69u BV=40.0 IBV=0.100 + CJO=593p M=0.333 N=7.19 TT=50.4n ) *DIODES_INC_SPICE_MODEL SBR10U45SP5 *SIMULATOR=SIMETRIX *ORIGIN=DZSL_DPG_SU *DATE=3/10/2012 *VERSION=1 .MODEL SBR10U45SP5 D( IS=28E-6 RS=10m BV=46.0 IBV=300u N=.97 TT=10n EG=.48 TRS1=4m CJO=12590p M=.8 VJ=.4) * (c) 2012 Diodes Inc * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * *SBR12U120P5 Spice Model v1.0 Last Revised 3/28/2016 Diodes Inc SUPER BARRIER RECTIFIER SIMULATOR=SPICE3 .MODEL DI_SBR12U120P5 D ( IS=3.440u RS=40.05m BV=135.0 IBV=10.00 + CJO=3.462n M=3.523 N=1.047 TT=10.00n EG=480.0m VJ=682.4m ) * (c) 2015 Diodes Incorporated * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Diodes "). They are supplied * free of charge by Diodes for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * Diodes Taiwan Inc.7F.,No. 50,Min-Chuan Road,Hsin-Tien District,New Taipei City 23141, Taiwan *SBR12U45LH1 Spice Model v1.0 Last Revised 10/17/2014 Diodes Inc SUPER BARRIER RECTIFIER SIMULATOR=SPICE3 .MODEL DI_SBR12U45LH1 D ( IS=29.84u RS=6.504m BV=50.00 IBV=10.00 + CJO=10.37n M=523.4m N=1.052 TT=34.00n EG=480.0m VJ=32.79m ) * (c) 2014 Diodes Incorporated * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Diodes "). They are supplied * free of charge by Diodes for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Taiwan Inc.7F.,No. 50,Min-Chuan Road,Hsin-Tien District,New Taipei City 23141, Taiwan *SRC=SBR130S3;SBR130S3;Diodes;Si; 30.0V 1.00A 39.0ns Diodes .MODEL SBR130S3 D ( IS=7.30u RS=80.3m BV=30.0 IBV=12.2u + CJO=416p M=0.333 N=1.09 TT=56.2n *SBRT15U50SP5 Spice Model v1.0 Last Revised 10/30/2014 Diodes Inc TRENCH SUPER BARRIER RECTIFIER *SIMULATOR=SPICE3 .MODEL DI_SBRT15U50SP5 D ( IS=74.23u RS=5.775m BV=55.00 IBV=10.00 + CJO=14.41n M=489.9m N=1.023 TT=49.80n EG=480.0m VJ=20.30m ) * (c) 2014 Diodes Incorporated * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Diodes "). They are supplied * free of charge by Diodes for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Taiwan Inc.7F.,No. 50,Min-Chuan Road,Hsin-Tien District,New Taipei City 23141, Taiwan *SBR1U150SA Spice Model v1.0 Last Revised 05/07/2014 Diodes Inc SURFACE MOUNT SUPER BARRIER RECTIFIER .MODEL DI_SBR1U150SA D ( IS=1.020m RS=1.983u BV=165.00 IBV=10.00 + CJO=1.164n M=461.9m N=3.651 TT=10.00n EG=480.0m VJ=12.68m ) * (c) 2014 Diodes Incorporated * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Diodes "). They are supplied * free of charge by Diodes for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Taiwan Inc.7F.,No. 50,Min-Chuan Road,Hsin-Tien District,New Taipei City 23141, Taiwan *TITLE=SBR1U200P1 *DATE=5/02/2016 *ORIGIN=DZSL_DPG_SU *SIMULATOR=SIMETRIX *VERSION=2 .SUBCKT SBR1U200P1 1 2 D1 1 2 Dsch D2 1 2 Dpn .MODEL Dsch D(IS=55n RS=1.8 BV=201 IBV=50u CJO=355p M=.41 VJ=.41 N=1.05 ISR=20n IKF=10m TRS1=.001 XTI1=3 TT=50n EG=.6 TIKF=.1) .model Dpn D(IS=8p IKF=30m BV=250 N=1 TT=50n EG=1.12 RS=.008 ISR=.1n) .ends * (c) 2016 Diodes Inc * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL * *TITLE=SBR1U400P1 *DATE=12/03/2012 *ORIGIN=DZSL_DPG_SU *SIMULATOR=SIMETRIX *VERSION=1 .MODEL SBR1U400P1 D(IS=70n RS=.05 BV=401 IBV=50u CJO=65p M=.41 VJ=.41 N=1.25 ISR=20n IKF=.51m TRS1=0 XTI1=3 TT=85n EG=.75 TIKF=.1) * (c) 2011 Diodes Inc * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL * *TITLE: SBR1U40LP *SIMULATOR=SIMETRIX *ORIGIN=DZSL_DPG_SU *DATE=27Apr2012 *VERSION=1 *PIN 1=Anode 2=Cathode .SUBCKT SBR1U40LP 1 2 M1 3 4 5 5 NMOD D1 5 3 DMOD R1 1 4 1u C1 3 5 1p R2 1 5 1u R3 3 2 1u .MODEL NMOD NMOS(LEVEL=3 VTO=.24 TOX=90E-10 NSUB=6E+15 KP=40 NFS=.2E+12 RS=0.3) .MODEL DMOD D(IS=5.7E-7 TT=3u N=1.74) .ENDS .SIMULATOR DEFAULT * (c) 2012 Diodes Inc * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL *SRC=SBR20A200CTB;DI_SBR20A200CTB;Diodes;Si; 200V 20.0A 20.0ns Diodes INC Schottky rectifier .MODEL DI_SBR20A200CTB D ( IS=4.16m RS=1.34m BV=200 IBV=3.28u + CJO=514p M=0.333 N=3.98 TT=28.8n *SBR20M150D1Q Spice Model v1.0 Last Revised 7/19/2019 Diodes Inc SUPER BARRIER RECTIFIER SIMULATOR=SPICE3 .MODEL DI_SBR20M150D1Q D ( IS=11.31u RS=23.20m BV=165.0 IBV=10.00 + CJO=11.60n M=552.0m N=1.329 TT=24.00n EG=480.0m VJ=13.53m ) * (c) 2019 Diodes Incorporated * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Diodes "). They are supplied * free of charge by Diodes for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Taiwan Inc.7F.,No. 50,Min-Chuan Road,Hsin-Tien District,New Taipei City 23141, Taiwan *SRC=SBR20U150CT;DI_SBR20U150CT;Diodes;Si; 150V 20.0A 30.0ns Diodes Inc. SBR/ SKY .MODEL DI_SBR20U150CT D ( IS=3.25m RS=2.57m BV=150 IBV=500u + CJO=11.3n M=0.333 N=3.28 TT=43.2n ) *SRC=SBR20U150CTFP;DI_SBR20U150CTFP;Diodes;Si; 150V 20.0A 30.0ns Diodes Inc. SBR/ SKY .MODEL DI_SBR20U150CTFP D ( IS=3.25m RS=2.57m BV=150 IBV=500u + CJO=11.3n M=0.333 N=3.28 TT=43.2n ) *SRC=SBR2A30P1;DI_SBR2A30P1;Diodes;Si; 30.0V 2.00A 12.0ns Diodes INC Schottky rectifier .MODEL DI_SBR2A30P1 D ( IS=78.9u RS=29.8m BV=30.0 IBV=60.0u + CJO=806p M=0.333 N=1.25 TT=17.3n) *SRC=SBR2A40P1;DI_SBR2A40P1;Diodes;Si; 40.0V 2.00A 12.0ns Diodes INC Schottky rectifier .MODEL DI_SBR2A40P1 D ( IS=17.0u RS=28.8m BV=40.0 IBV=15.9u + CJO=705p M=0.333 N=1.17 TT=17.3n) *SRC=SBR2M30P1;DI_SBR2M30P1;Diodes;Si; 30.0V 2.00A 12.0ns Diodes INC Schottky rectifier .MODEL DI_SBR2M30P1 D ( IS=17.0u RS=28.8m BV=30.0 IBV=20.0u + CJO=865p M=0.333 N=1.17 TT=17.3n) *SBR2M60S1F Spice Model v1.0 Last Revised 7/18/2022 Diodes Inc SUPER BARRIER RECTIFIER SIMULATOR=SPICE3 .MODEL DI_SBR2M60S1F D ( IS=122.1n RS=66.59m BV=66.0 IBV=10.00 + CJO=1.674n M=463.4m N=1.075 TT=12.00n EG=480.0m VJ=13.64m ) *SBR2U100LP Spice Model v1.0 Last Revised 3/22/2018 Diodes Inc SUPER BARRIER RECTIFIER SIMULATOR=SPICE3 .MODEL DI_SBR2U100LP D ( IS=2.009u RS=46.88m BV=111.00 IBV=10.00 + CJO=723.7p M=638.1m N=1.587 TT=21.8n EG=480.0m VJ=52.26m ) * (c) 2018 Diodes Incorporated * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Diodes "). They are supplied * free of charge by Diodes for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Taiwan Inc.7F.,No. 50,Min-Chuan Road,Hsin-Tien District,New Taipei City 23141, Taiwan *TITLE: SBR2U150SA *SIMULATOR=SIMETRIX *ORIGIN=DZSL_DPG_SU *DATE=16Dec2014 *VERSION=1 .SUBCKT SBR2U150SA 1 2 D1 1 2 Dsch D2 1 2 Dpn .MODEL Dsch D ( IS=4u RS=.3 BV=160.0 IBV=150.0u CJO=951p M=0.333 N=1.145 TT=17.3n EG=.5 TRS1=3m NBV=10 IKF=200m) .model Dpn D(IS=2p IKF=20000m BV=160 TT=50n EG=1.12 RS=.02 ISR=1n) .ENDS * (c) 2014 Diodes Inc * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL *TITLE: SBR2U30P1 *SIMULATOR=SIMETRIX *ORIGIN=DZSL_DPG_SU *DATE=31Jan2012 *VERSION=2 *PIN 1=Anode 2=Cathode .MODEL SBR2U30P1 D( IS=60u RS=25m BV=32.0 IBV=150.0u CJO=951p M=0.333 N=1.14 TT=17.3n EG=.5 TRS1=3m NBV=10) * (c) 2011 Diodes Inc * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL * *SBR2U60S1F Spice Model v1.0 Last Revised 6/26/2017 Diodes Inc SUPER BARRIER RECTIFIER SIMULATOR=SPICE3 .MODEL DI_SBR2U60S1F D ( IS=12.49u RS=58.29m BV=62.00 IBV=10.00 + CJO=1.727n M=2.037 N=1.060 TT=1.82n EG=480.0m VJ=357.3m ) * (c) 2017 Diodes Incorporated * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Diodes "). They are supplied * free of charge by Diodes for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Taiwan Inc.7F.,No. 50,Min-Chuan Road,Hsin-Tien District,New Taipei City 23141, Taiwan *SRC=SBR3045CT;DI_SBR3045CT;Diodes;Si; 45.0V 30.0A 35.2ns Diodes Inc. SBR/ SKY .MODEL DI_SBR3045CT D ( IS=2.03m RS=2.30m BV=45.0 IBV=500u + CJO=1.87n M=0.333 N=1.66 TT=50.7n ) *SRC=SBR30A45CT;DI_SBR30A45CT;Diodes;Si; 45.0V 30.0A 35.2ns Diodes Inc. SBR/ SKY .MODEL DI_SBR30A45CT D ( IS=120u RS=1.66m BV=45.0 IBV=500u + CJO=1.87n M=0.333 N=1.18 TT=50.7n ) *SRC=SBR30U30CT;DI_SBR30U30CT;Diodes;Si; 20.0V 30.0A 35.0ns Diodes INC Schottky rectifier .MODEL DI_SBR30U30CT D ( IS=580u RS=3.06m BV=20.0 IBV=230u + CJO=997p M=0.333 N=1.35 TT=50.4n *TITLE: SBR3150SB *SIMULATOR=SIMETRIX *ORIGIN=DZSL_DPG_SU *DATE=16Dec2014 *VERSION=1 .SUBCKT SBR3150SB 1 2 D1 1 2 Dsch D2 1 2 Dpn .MODEL Dsch D ( IS=11u RS=.22 BV=160.0 IBV=150.0u CJO=951p M=0.333 N=1.145 TT=17.3n EG=.47 TRS1=2m NBV=10 IKF=120m) .model Dpn D(IS=2p IKF=100 BV=160 TT=50n EG=1.1 RS=.011 ISR=1n) .ENDS * (c) 2014 Diodes Inc * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL *SRC=SBR3A40SA;DI_SBR3A40SA;Diodes;Si; 40.0V 3.00A 12.0ns Diodes Inc. SBR/ SKY .MODEL DI_SBR3A40SA D ( IS=165u RS=18.5m BV=40.0 IBV=400u + CJO=57.0p M=0.333 N=1.26 TT=17.3n ) *SRC=SBR3M30P1;DI_SBR3M30P1;Diodes;Si; 30.0V 3.00A 12.0ns Diodes INC Schottky rectifier .MODEL DI_SBR3M30P1 D ( IS=11.4u RS=10.6m BV=30.0 IBV=19.0u + CJO=865p M=0.333 N=1.13 TT=17.3n) *SRC=SBR3U100LP;DI_SBR3U100LP;Diodes;Si; 100V 3.00A 12.9ns Diodes Inc. SBR/ SKY .MODEL DI_SBR3U100LP D ( IS=8.73n RS=34.4m BV=100 IBV=16.0u + CJO=141p M=0.333 N=0.700 TT=18.6n ) *SRC=SBR3U150LP;DI_SBR3U150LP;Diodes;Si; 150V 3.00A 11.5ns Diodes Inc. SBR/ SKY .MODEL DI_SBR3U150LP D ( IS=311u RS=22.4m BV=150 IBV=600n + CJO=178p M=0.333 N=2.78 TT=16.6n ) * *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG *SIMULATOR=PSPICE *DATE=02/07/2009 *VERSION=3 *PIN_ORDER anode cathode * .SUBCKT SBR3U20SA 1 2 D1 1 3 Dmod R1 3 2 95 L1 3 2 1.8E-9 .MODEL Dmod D (IS=8E-5 N=1.1 ISR=5E-8 NR=1.0 BV=21 IBV=1E-3 NBV=5 + IBVL=2E-6 NBVL=500 RS=0.015 CJO=3500E-12 VJ=0.38 M=0.7 EG=0.5 XTI=2 + TRS1=0.003 TT=3e-9) .ENDS * *$ *SRC=SBR3U30P1;DI_SBR3U30P1;Diodes;Si; 30.0V 3.00A 12.0ns Diodes INC Schottky rectifier .MODEL DI_SBR3U30P1 D ( IS=1.14m RS=11.7m BV=30.0 IBV=146u + CJO=951p M=0.333 N=1.71 TT=17.3n) *TITLE: SBR3U40P1 *SIMULATOR=SIMETRIX *ORIGIN=DZSL_DPG_SU *DATE=1May2012 *VERSION=1 .MODEL SBR3U40P1 D( IS=20E-6 RS=35m BV=41.0 IBV=70u N=1 TT=10n EG=.53 TRS1=5m CJO=500p M=.6 VJ=.4) * (c) 2012 Diodes Inc * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL *SBR3U60P1 Spice Model v1.0 Last Revised 04/29/2014 Diodes Inc SUPER BARRIER RECTIFIER .MODEL DI_SBR3U60P1 D ( IS=1.638u RS=62.49m BV=66.00 IBV=10.00 + CJO=1.853n M=761.6m N=1.048 TT=10.00n EG=480.0m VJ=173.8m ) * (c) 2014 Diodes Incorporated * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Diodes "). They are supplied * free of charge by Diodes for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Taiwan Inc.7F.,No. 50,Min-Chuan Road,Hsin-Tien District,New Taipei City 23141, Taiwan *SBR40U300CTB Spice Model v1.0 Last Revised 12/17/2014 Diodes Inc SUPER BARRIER RECTIFIER SIMULATOR=SPICE3 .MODEL DI_SBR40U300CTB D ( IS=233.1n RS=16.34m BV=330.0 IBV=10.00 + CJO=1.055n M=487.5m N=1.424 TT=33.00n EG=480.0m VJ=504.9m ) * (c) 2014 Diodes Incorporated * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Diodes "). They are supplied * free of charge by Diodes for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Taiwan Inc.7F.,No. 50,Min-Chuan Road,Hsin-Tien District,New Taipei City 23141, Taiwan *SRC=SBR40U45CT;DI_SBR40U45CT;Diodes;Si; 45.0V 40.0A 74.0ns Diodes INC Schottky rectifier .MODEL DI_SBR40U45CT D ( IS=30.5m RS=1.77m BV=45.0 IBV=250u + CJO=8.18n M=0.333 N=2.24 TT=107n .MODEL SBR4U130LP D ( + IS=15.568E-6 + N=1.031 + RS=20e-3 + IKF=257.62E-6 + CJO=5.0982E-9 + M=1.0812 + VJ=68.681E-3 + ISR=38.247E-9 + NR=4.9950 + BV=130.27 + IBV=100.00E-6 + XTI=2.89 ) *SBR545SAFQ-13 Spice Model v1.0 Last Revised 11/14/2022 Diodes Inc SUPER BARRIER RECTIFIER SIMULATOR=SPICE3 .MODEL DI_SBR545SAFQ-13 D ( IS=15.81u RS=24.82m BV=60.0 IBV=10.00 + CJO=3.030n M=542.8m N=1.108 TT=14.88n EG=480.0m VJ=33.17m ) * (c) 2019 Diodes Incorporated * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Diodes "). They are supplied * free of charge by Diodes for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Taiwan Inc.7F.,No. 50,Min-Chuan Road,Hsin-Tien District,New Taipei City 23141, Taiwan *SBR60A300CT Spice Model v1.0 Last Revised 12/17/2014 Diodes Inc SUPER BARRIER RECTIFIER SIMULATOR=SPICE3 .MODEL DI_SBR60A300CT D ( IS=3.829u RS=25.27m BV=330.0 IBV=10.00 + CJO=1.006n M=557.8m N=1.413 TT=25.00n EG=480.0m VJ=826.8m ) * (c) 2014 Diodes Incorporated * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Diodes "). They are supplied * free of charge by Diodes for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Taiwan Inc.7F.,No. 50,Min-Chuan Road,Hsin-Tien District,New Taipei City 23141, Taiwan *SRC=SBR60A60CT;DI_SBR60A60CT;Diodes;Si; 60.0V 60.0A 68.0ns Diodes INC Schottky rectifier .MODEL DI_SBR60A60CT D ( IS=1.44m RS=1.34m BV=60.0 IBV=70.0u + CJO=7.24n M=0.333 N=1.72 TT=97.9n ) *SBR6100CTLQ Spice Model v1.0 Last Revised 7/20/2022 Diodes Inc SUPER BARRIER RECTIFIER SIMULATOR=SPICE3 .MODEL DI_SBR6100CTLQ D ( IS=388.8n RS=35.91m BV=110.0 IBV=10.00 + CJO=2.366n M=532.4m N=1.117 TT=12.00n EG=480.0m VJ=19.00m) *SRC=SBR8U60P5;;Diodes;Si; 60.0V 8.00A 25.0ns Diodes INC SBR rectifier .MODEL D ( IS=75.3u RS=20.1m BV=60.0 IBV=600u + CJO=13.3n M=0.333 N=1.10 TT=36.0n ) *SBRT10U50SP5 Spice Model v1.0 Last Revised 11/06/2014 Diodes Inc TRENCH SUPER BARRIER RECTIFIER *SIMULATOR=SPICE3 .MODEL DI_SBRT10U50SP5 D ( IS=47.29u RS=7.545m BV=55.00 IBV=10.00 + CJO=5.815n M=426.5m N=1.010 TT=38.20n EG=480.0m VJ=35.52m ) * (c) 2014 Diodes Incorporated * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Diodes "). They are supplied * free of charge by Diodes for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Taiwan Inc.7F.,No. 50,Min-Chuan Road,Hsin-Tien District,New Taipei City 23141, Taiwan *SBRT15U100SP5 Spice Model v1.0 Last Revised 05/22/2014 Diodes Inc TRENCH SUPER BARRIER RECTIFIER *SIMULATOR=SPICE3 .MODEL DI_SBRT15U100SP5 D ( IS=14.76u RS=19.00m BV=110.00 IBV=10.00 + CJO=10.76n M=519.9m N=1.023 TT=29.10n EG=480.0m VJ=14.89m ) * (c) 2014 Diodes Incorporated * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Diodes "). They are supplied * free of charge by Diodes for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Taiwan Inc.7F.,No. 50,Min-Chuan Road,Hsin-Tien District,New Taipei City 23141, Taiwan *SBRT15U50SP5 Spice Model v1.0 Last Revised 7/12/2017 Diodes Inc TRENCH SUPER BARRIER RECTIFIER *SIMULATOR=SPICE3 .MODEL DI_SBRT15U50SP5 D ( IS=74.23u RS=5.775m BV=54.00 IBV=10.00 + CJO=14.41n M=489.9m N=1.023 TT=49.80n EG=480.0m VJ=20.30m ) * (c) 2017 Diodes Incorporated * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Diodes "). They are supplied * free of charge by Diodes for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Taiwan Inc.7F.,No. 50,Min-Chuan Road,Hsin-Tien District,New Taipei City 23141, Taiwan *SBRT20M60SP5 Spice Model v1.0 Last Revised 05/23/2014 Diodes Inc TRENCH SUPER BARRIER RECTIFIER *SIMULATOR=SPICE3 .MODEL DI_SBRT20M60SP5 D ( IS=17.25u RS=7.887m BV=66.00 IBV=10.00 + CJO=14.41n M=526.0m N=1.019 TT=44.20n EG=480.0m VJ=21.52m ) * (c) 2014 Diodes Incorporated * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Diodes "). They are supplied * free of charge by Diodes for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Taiwan Inc.7F.,No. 50,Min-Chuan Road,Hsin-Tien District,New Taipei City 23141, Taiwan *SBRT20U50SLP Spice Model v1.0 Last Revised 04/16/2014 Diodes Inc Trench SUPER BARRIER RECTIFIER .MODEL DI_SBRT20U50SLP D ( IS=60.50u RS=6.029m BV=55.00 IBV=10.00 + CJO=13.00n M=473.3m N=1.017 TT=10.00n EG=480.0m VJ=20.19m ) * (c) 2014 Diodes Incorporated * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Diodes "). They are supplied * free of charge by Diodes for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Taiwan Inc.7F.,No. 50,Min-Chuan Road,Hsin-Tien District,New Taipei City 23141, Taiwan *SBRT20U60SP5 Spice Model v1.0 Last Revised 05/22/2014 Diodes Inc TRENCH SUPER BARRIER RECTIFIER *SIMULATOR=SPICE3 .MODEL DI_SBRT20U60SP5 D ( IS=53.48u RS=7.620m BV=66.00 IBV=10.00 + CJO=14.07n M=529.3m N=1.019 TT=43.20n EG=480.0m VJ=23.66m ) * (c) 2014 Diodes Incorporated * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Diodes "). They are supplied * free of charge by Diodes for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Taiwan Inc.7F.,No. 50,Min-Chuan Road,Hsin-Tien District,New Taipei City 23141, Taiwan *SBRT3M60P1 Spice Model v1.0 Last Revised 2/13/2018 Diodes Inc SUPER BARRIER RECTIFIER SIMULATOR=SPICE3 .MODEL DI_SBRT3M60P1 D ( IS=1.813u RS=46.73m BV=61.00 IBV=10.00 + CJO=2.515n M=513.9m N=1.040 TT=12.00n EG=480.0m VJ=12.99m ) * (c) 2018 Diodes Incorporated * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Diodes "). They are supplied * free of charge by Diodes for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Taiwan Inc.7F.,No. 50,Min-Chuan Road,Hsin-Tien District,New Taipei City 23141, Taiwan *SBRT3U40P1 Spice Model v1.0 Last Revised 05/28/2014 Diodes Inc TRENCH SUPER BARRIER RECTIFIER *SIMULATOR=SPICE3 .MODEL DI_SBRT3U40P1 D ( IS=11.26u RS=31.17m BV=45.00 IBV=10.00 + CJO=2.602n M=426.4m N=1.031 TT=12.40n EG=480.0m VJ=6.740m ) * (c) 2014 Diodes Incorporated * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Diodes "). They are supplied * free of charge by Diodes for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Taiwan Inc.7F.,No. 50,Min-Chuan Road,Hsin-Tien District,New Taipei City 23141, Taiwan *SBRT3U45SA Spice Model v1.0 Last Revised 04/22/2014 Diodes Inc TRENCH SUPER BARRIER RECTIFIER *SIMULATOR=SPICE3 .MODEL DI_SBRT3U45SA D ( IS=16.77u RS=32.93m BV=50.50 IBV=10.00 + CJO=1.717n M=325.5m N=1.065 TT=10.00n EG=480.0m VJ=1.538m ) * (c) 2014 Diodes Incorporated * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Diodes "). They are supplied * free of charge by Diodes for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Taiwan Inc.7F.,No. 50,Min-Chuan Road,Hsin-Tien District,New Taipei City 23141, Taiwan *SBRT5A50SA Spice Model v1.0 Last Revised 04/23/2014 Diodes Inc TRENCH SUPER BARRIER RECTIFIER *SIMULATOR=SPICE3 .MODEL DI_SBRT5A50SA D ( IS=11.30u RS=22.68m BV=56.00 IBV=10.00 + CJO=1.998n M=448.8m N=1.040 TT=10.00n EG=480.0m VJ=33.67m ) * (c) 2014 Diodes Incorporated * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Diodes "). They are supplied * free of charge by Diodes for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Taiwan Inc.7F.,No. 50,Min-Chuan Road,Hsin-Tien District,New Taipei City 23141, Taiwan *SBRT5A50SAF Spice Model v1.0 Last Revised 04/11/2014 Diodes Inc Trench SUPER BARRIER RECTIFIER .MODEL DI_SBRT5A50SAF D ( IS=16.70u RS=25.96m BV=61 IBV=10 + CJO=1.986n M=388.7m N=1.052 TT=10.00n EG=480.0m VJ=11.34m ) * (c) 2014 Diodes Incorporated * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Diodes "). They are supplied * free of charge by Diodes for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Taiwan Inc.7F.,No. 50,Min-Chuan Road,Hsin-Tien District,New Taipei City 23141, Taiwan *SDM05A30CP3 Spice Model v1.0 Last Revised 10/18/2022 Diodes Inc SUPER BARRIER RECTIFIER SIMULATOR=SPICE3 .MODEL DI_SDM05A30CP3 D ( IS=159.2n RS=319.8m BV=33.0 IBV=10.00 + CJO=82.04p M=294.4m N=1.092 TT=4.096n EG=480.0m VJ=3.281m ) *SRC=SDM100K30L;DI_SDM100K30L;Diodes;Si; 30.0V 1.00A 10.0ns Diodes Inc. Schottky Barrier Rectifier .MODEL DI_SDM100K30L D ( IS=255n RS=0.108 BV=30.0 IBV=100u + CJO=53.4p M=0.333 N=0.927 TT=14.4n ) *SDM1100S1F Spice Model v1.0 Last Revised 1/19/2018 Diodes Inc SUPER BARRIER RECTIFIER SIMULATOR=SPICE3 .MODEL DI_SDM1100S1F D ( IS=5.225n RS=119.2m BV=104.0 IBV=10.00 + CJO=223.1p M=336.8m N=1.126 TT=9.5n EG=480.0m VJ=24.16m ) * (c) 2018 Diodes Incorporated * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Diodes "). They are supplied * free of charge by Diodes for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Taiwan Inc.7F.,No. 50,Min-Chuan Road,Hsin-Tien District,New Taipei City 23141, Taiwan SDM2U30CSP Spice Model v1.0 Last Revised 8/11/2015 Diodes Inc SUPER BARRIER RECTIFIER SIMULATOR=SPICE3 .MODEL DI_SDM02U30LP3 D ( IS=10.49u RS=43.16m BV=100.00 IBV=200.00u + CJO=375.0p M=333.0m N=1.146 TT=21.6n EG=480.0m VJ=600.0m ) * (c) 2015 Diodes Incorporated * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Diodes "). They are supplied * free of charge by Diodes for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Taiwan Inc.7F.,No. 50,Min-Chuan Road,Hsin-Tien District,New Taipei City 23141, Taiwan *SDT12A120P5 Spice Model v1.0 Last Revised 4/8/2022 Diodes Inc SUPER BARRIER RECTIFIER SIMULATOR=SPICE3 .MODEL DI_SDT12A120P5 D ( IS=1.084u RS=19.29m BV=140.0 IBV=10.00 + CJO=2.275n M=669.4m N=1.086 TT=25.30n EG=480.0m VJ=877.8m ) *SDT15H100P5 Spice Model v1.0 Last Revised 4/8/2022 Diodes Inc SIMULATOR=SPICE3 .MODEL DI_SDT15H100P5 D ( IS=1.531u RS=8.047m BV=120.0 IBV=10.00 + CJO=2.944n M=610.9m N=1.113 TT=40.80n EG=480.0m VJ=1.158 ) *SDT5100LP5 Spice Model v1.0 Last Revised 02/21/2022 Diodes Inc SUPER BARRIER RECTIFIER SIMULATOR=SPICE3 .MODEL DI_SDT5100LP5 D ( IS=183.4n RS=33.62m BV=110.0 IBV=10.00 + CJO=504.0p M=688.6m N=1.286 TT=20.00n EG=480.0m VJ=2.077 ) *SRC=US1A;DI_US1A;Diodes;Si; 50.0V 1.00A 50.0ns Diodes Inc. - .MODEL DI_US1A D ( IS=667n RS=72.0m BV=50.0 IBV=5.00u + CJO=37.0p M=0.333 N=2.41 TT=72.0n ) *SRC=US1B;DI_US1B;Diodes;Si; 100V 1.00A 50.0ns Diodes Inc. - .MODEL DI_US1B D ( IS=667n RS=72.0m BV=100 IBV=5.00u + CJO=37.0p M=0.333 N=2.41 TT=72.0n ) *SRC=US1D;DI_US1D;Diodes;Si; 200V 1.00A 50.0ns Diodes Inc. - .MODEL DI_US1D D ( IS=667n RS=72.0m BV=200 IBV=5.00u + CJO=37.0p M=0.333 N=2.41 TT=72.0n ) *SRC=US1G;DI_US1G;Diodes;Si; 400V 1.00A 50.0ns Diodes Inc. .MODEL DI_US1G D ( IS=540p RS=0.116 BV=400 IBV=5.00u + CJO=37.0p M=0.333 N=1.70 TT=72.0n ) *SRC=US1J;DI_US1J;Diodes;Si; 600V 1.00A 75.0ns Diodes Inc. - .MODEL DI_US1J D ( IS=709n RS=82.3m BV=600 IBV=5.00u + CJO=18.5p M=0.333 N=3.23 TT=108n ) *SRC=US1K;DI_US1K;Diodes;Si; 800V 1.00A 75.0ns Diodes Inc. - .MODEL DI_US1K D ( IS=709n RS=82.3m BV=800 IBV=5.00u + CJO=18.5p M=0.333 N=3.23 TT=108n ) *SRC=US1M;DI_US1M;Diodes;Si; 1.00kV 1.00A 75.0ns Diodes Inc. - .MODEL DI_US1M D ( IS=709n RS=82.3m BV=1.00k IBV=5.00u + CJO=18.5p M=0.333 N=3.23 TT=108n ) * *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG_SU *SIMULATOR=PSPICE *DATE=7/22/2019 *VERSION=1 *SRC=US1MDFQ;DI_US1MDFQ;Diodes;Si; 1.00kV 1.00A 75.0ns Diodes Inc. - .MODEL DI_US1MDFQ D ( IS=269n RS=116.2m BV=1.2k IBV=10.00u + CJO=15.6p M=0.333 N=2.777 TT=55n ) *Diodes US1MDFQ Spice Model v1.0 Last Revised 2019/07/24 * (c) 2019 Diodes Inc * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL * * DIODES INCORPORATED AND ITS AFFILIATED COMPANIES AND SUBSIDIARIES (COLLECTIVELY, "DIODES") * PROVIDE THESE SPICE MODELS AND DATA (COLLECTIVELY, THE "SM DATA") "AS IS" AND WITHOUT ANY * REPRESENTATIONS OR WARRANTIES, EXPRESS OR IMPLIED, INCLUDING ANY WARRANTY OF MERCHANTABILITY * OR FITNESS FOR A PARTICULAR PURPOSE, ANY WARRANTY ARISING FROM COURSE OF DEALING OR COURSE OF * PERFORMANCE, OR ANY WARRANTY THAT ACCESS TO OR OPERATION OF THE SM DATA WILL BE UNINTERRUPTED, * OR THAT THE SM DATA OR ANY SIMULATION USING THE SM DATA WILL BE ERROR FREE. TO THE MAXIMUM * EXTENT PERMITTED BY LAW, IN NO EVENT WILL DIODES BE LIABLE FOR ANY DIRECT OR INDIRECT, * SPECIAL, INCIDENTAL, PUNITIVE OR CONSEQUENTIAL DAMAGES ARISING OUT OF OR IN CONNECTION WITH * THE PRODUCTION OR USE OF SM DATA, HOWEVER CAUSED AND UNDER WHATEVER CAUSE OF ACTION OR THEORY * OF LIABILITY BROUGHT (INCLUDING, WITHOUT LIMITATION, UNDER ANY CONTRACT, NEGLIGENCE OR OTHER * TORT THEORY OF LIABILITY), EVEN IF DIODES HAS BEEN ADVISED OF THE POSSIBILITY OF SUCH DAMAGES, * AND DIODES' TOTAL LIABILITY (WHETHER IN CONTRACT, TORT OR OTHERWISE) WITH REGARD TO THE SM * DATA WILL NOT, IN THE AGGREGATE, EXCEED ANY SUMS PAID BY YOU TO DIODES FOR THE SM DATA. *SRC=US1NWFQ;DI_US1NWFQ;Diodes;Si; 1.20kV 1.00A 80.0ns Diodes Inc. - .MODEL DI_US1NWFQ D ( IS=174n RS=211.9m BV=1.372k IBV=5.00u + CJO=12.67p VJ=0.867 M=0.333 N=2.837 TT=47.2n ) *ZETEX ZHCS1000 Spice Model v1.0 Last Revised 22/05/02 * .MODEL ZHCS1000 D IS=1.6e-7 N=.59 RS=137e-3 IKF=2.5e-3 XTI=2 +EG=.58 CJO=184.9p M=.5231 VJ=.3905 Fc=.5 BV=60 IBV=100E-6 +ISR=4E-6 NR=1.8 * *$ * *ZETEX ZHCS2000 Spice Model v1.0 Last Revised 22/10/03 * .MODEL ZHCS2000 D IS=5e-7 N=.59 RS=88e-3 IKF=5e-3 XTI=2 +EG=.58 CJO=370p M=.5231 VJ=.3905 Fc=.5 BV=60 IBV=300E-6 +ISR=10E-6 NR=1.8 * *$ * *ZETEX ZHCS500 Spice Model v1.0 Last Revised 22/05/02 * .MODEL ZHCS500 D IS=9.1e-8 N=.59 RS=250e-3 IKF=1.37e-3 XTI=2 +EG=.58 CJO=101p M=.5231 VJ=.3905 Fc=.5 BV=60 IBV=100E-6 +ISR=2.2E-6 NR=1.8 * *$ * *ZHCS506QTA Spice Model v1.0 Last Revised 11/23/2022 Diodes Inc SUPER BARRIER RECTIFIER SIMULATOR=SPICE3 .MODEL DI_ZHCS506QTA D ( IS=2.455u RS=383.2m BV=66.00 IBV=10.00 + CJO=93.58p M=387.8m N=1.018 TT=8.727n EG=480.0m VJ=237.2m ) *ZETEX ZHCS750 Spice Model v1.0 Last Revised 23/9/97 * .MODEL ZHCS750 D IS=7E-6 N=.99 RS=130E-3 IKF=.15 XTI=2 EG=.58 + CJO=184.9p M=.523 VJ=.3905 Fc=.5 BV=60 IBV=300E-6 + ISR=4E-6 NR=1.8 * *$ * *ZETEX ZLLS1000 Spice Model v2.0 Last revision 24/05/2007 * *This simple model has limitations with respect to temperature *for best fit of forward characteristitics with temperature EG=0.63 *for best fit of reverse characteristitics with temperature EG=0.85 * .MODEL ZLLS1000 D IS=1.35E-6 N=1.03 ISR=3.3E-6 NR=2 IKF=0.65 BV=56 IBV=5E-4 +RS=0.14 TT=4E-9 CJO=115E-12 VJ=0.6 M=0.36 EG=0.63 XTI=2 TRS1=4E-3 * *$ * *ZETEX ZLLS2000 Spice Model v2.0 Last revision 25/05/2007 * *This simple model has limitations with respect to temperature *for best fit of forward characteristitics with temperature EG=0.63 *for best fit of reverse characteristitics with temperature EG=0.85 * .MODEL ZLLS2000 D IS=2.7e-6 N=1.03 ISR=4.5E-6 NR=2 IKF=1.3 BV=56 IBV=1E-3 +RS=0.07 TT=6e-9 CJO=265e-12 VJ=0.6 M=0.34 EG=0.63 XTI=2 TRS1=4e-3 * *$ * *ZETEX ZLLS400 Spice Model v2.0 Last revision 24/05/2007 * *This simple model has limitations with respect to temperature *best fit of forward characteristitics with temperature EG=0.63 *best fit of reverse characteristitics with temperature EG=0.85 * .MODEL ZLLS400 D IS=6.1e-7 N=1.03 ISR=1.4E-6 NR=2 IKF=0.32 BV=42 IBV=2E-4 +RS=0.27 TT=3e-9 CJO=71e-12 VJ=0.6 M=0.36 EG=0.63 XTI=2 TRS1=4e-3 * *$ * *ZETEX ZLLS410 Spice Model v1.0 Last Revised 25/05/07 * *This simple model has limitations with respect to temperature *best fit of forward characteristitics with temperature EG=0.63 *best fit of reverse characteristitics with temperature EG=0.75 * .MODEL ZLLS410 D IS=1.3e-6 N=1.03 ISR=4E-7 NR=2 IKF=0.15 BV=36 IBV=200E-6 +NBV=1 RS=0.1 TT=2e-9 CJO=81e-12 VJ=0.6 M=0.39 EG=0.63 XTI=2 TRS1=4E-3 * *$ * *ZETEX ZLLS500 Spice Model v2.0 Last revision 24/05/2007 * *This simple model has limitations with respect to temperature *best fit of forward characteristitics with temperature EG=0.63 *best fit of reverse characteristitics with temperature EG=0.85 * .MODEL ZLLS500 D IS=6.1e-7 N=1.03 ISR=1.4E-6 NR=2 IKF=0.32 BV=42 IBV=2E-4 +RS=0.27 TT=3e-9 CJO=71e-12 VJ=0.6 M=0.36 EG=0.63 XTI=2 TRS1=4e-3 * *$ *