* DIODES INCORPORATED AND ITS AFFILIATED COMPANIES AND SUBSIDIARIES (COLLECTIVELY, "DIODES") * PROVIDE THESE SPICE MODELS AND DATA (COLLECTIVELY, THE "SM DATA") "AS IS" AND WITHOUT ANY * REPRESENTATIONS OR WARRANTIES, EXPRESS OR IMPLIED, INCLUDING ANY WARRANTY OF MERCHANTABILITY * OR FITNESS FOR A PARTICULAR PURPOSE, ANY WARRANTY ARISING FROM COURSE OF DEALING OR COURSE OF * PERFORMANCE, OR ANY WARRANTY THAT ACCESS TO OR OPERATION OF THE SM DATA WILL BE UNINTERRUPTED, * OR THAT THE SM DATA OR ANY SIMULATION USING THE SM DATA WILL BE ERROR FREE. TO THE MAXIMUM * EXTENT PERMITTED BY LAW, IN NO EVENT WILL DIODES BE LIABLE FOR ANY DIRECT OR INDIRECT, * SPECIAL, INCIDENTAL, PUNITIVE OR CONSEQUENTIAL DAMAGES ARISING OUT OF OR IN CONNECTION WITH * THE PRODUCTION OR USE OF SM DATA, HOWEVER CAUSED AND UNDER WHATEVER CAUSE OF ACTION OR THEORY * OF LIABILITY BROUGHT (INCLUDING, WITHOUT LIMITATION, UNDER ANY CONTRACT, NEGLIGENCE OR OTHER * TORT THEORY OF LIABILITY), EVEN IF DIODES HAS BEEN ADVISED OF THE POSSIBILITY OF SUCH DAMAGES, * AND DIODES' TOTAL LIABILITY (WHETHER IN CONTRACT, TORT OR OTHERWISE) WITH REGARD TO THE SM * DATA WILL NOT, IN THE AGGREGATE, EXCEED ANY SUMS PAID BY YOU TO DIODES FOR THE SM DATA. *DIODES-BCD AP2127 ADJ Version Spice Model v1.0 * *NOTE: This is a simplified model not all features are modeled. * .subckt AP2127_ADJ 1 2 3 4 5 * NODES: VIN GND EN ADJ VOUT M1 5 9 1 1 MOD1 L=1u W=1000u R1 6 1 1E6 C1 9 1 20E-12 C2 5 9 20E-12 G1 2 20 4 12 6E-6 G2 2 22 12 4 6E-6 F1 22 2 VS 1 F2 1 6 VS 20 G3 6 1 22 2 100E-6 R3 20 23 10E3 VS 23 2 0 C3 20 2 310E-15 C4 20 5 10E-12 R2 22 2 5E6 R5 22 24 400E3 C5 24 2 20E-12 D1 5 1 Dmod1 R6 3 13 20E4 R7 3 2 3E6 C6 13 2 4E-6 R8 1 5 50E6 R9 6 9 20E3 R10 2 12 Rmod1 1 R40 5 2 5E4 S1 1 6 13 2 Smod1 I1 2 12 0.8 .MODEL MOD1 PMOS (VTO=-0.82 RS=0.2 RD=0.2 IS=1E-15 KP=0.73 KF=2e-19 AF=1.22) .MODEL Dmod1 D (IS=1E-13 RS=0.5 N=1) .MODEL Dmod2 D (IS=1E-13 RS=0.1 N=0.5) .MODEL Rmod1 RES (TC1=-3E-5 TC2=-1E-7) .MODEL Smod1 VSWITCH RON=1E-3 ROFF=10E6 VON=0.5 VOFF=1.2 .ENDS AP2127_ADJ * *SRC=MMBT4401;DI_MMBT4401;BJTs NPN; Si; 40.0V 0.600A 200MHz Diodes, Inc. transistor .MODEL DI_MMBT4401 NPN (IS=60.9f NF=1.00 BF=410 VAF=114 + IKF=0.364 ISE=25.5p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.900 RE=0.713 RB=2.85 RC=0.285 + XTB=1.5 CJE=36.2p VJE=1.10 MJE=0.500 CJC=15.4p VJC=0.300 + MJC=0.300 TF=717p TR=121n EG=1.12 ) *SRC=UDZ5V6B;DI_UDZ5V6;Diodes;Zener <=10V; 5.60V 0.200W Diodes Inc. Zener Diode *SYM=HZEN .SUBCKT DI_UDZ5V6 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 4.99 .MODEL DF D ( IS=14.7p RS=3.10 N=1.10 + CJO=32.9p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=2.94f RS=1.28 N=0.828 ) .ENDS