* DIODES INCORPORATED AND ITS AFFILIATED COMPANIES AND SUBSIDIARIES (COLLECTIVELY, "DIODES") * PROVIDE THESE SPICE MODELS AND DATA (COLLECTIVELY, THE "SM DATA") "AS IS" AND WITHOUT ANY * REPRESENTATIONS OR WARRANTIES, EXPRESS OR IMPLIED, INCLUDING ANY WARRANTY OF MERCHANTABILITY * OR FITNESS FOR A PARTICULAR PURPOSE, ANY WARRANTY ARISING FROM COURSE OF DEALING OR COURSE OF * PERFORMANCE, OR ANY WARRANTY THAT ACCESS TO OR OPERATION OF THE SM DATA WILL BE UNINTERRUPTED, * OR THAT THE SM DATA OR ANY SIMULATION USING THE SM DATA WILL BE ERROR FREE. TO THE MAXIMUM * EXTENT PERMITTED BY LAW, IN NO EVENT WILL DIODES BE LIABLE FOR ANY DIRECT OR INDIRECT, * SPECIAL, INCIDENTAL, PUNITIVE OR CONSEQUENTIAL DAMAGES ARISING OUT OF OR IN CONNECTION WITH * THE PRODUCTION OR USE OF SM DATA, HOWEVER CAUSED AND UNDER WHATEVER CAUSE OF ACTION OR THEORY * OF LIABILITY BROUGHT (INCLUDING, WITHOUT LIMITATION, UNDER ANY CONTRACT, NEGLIGENCE OR OTHER * TORT THEORY OF LIABILITY), EVEN IF DIODES HAS BEEN ADVISED OF THE POSSIBILITY OF SUCH DAMAGES, * AND DIODES' TOTAL LIABILITY (WHETHER IN CONTRACT, TORT OR OTHERWISE) WITH REGARD TO THE SM * DATA WILL NOT, IN THE AGGREGATE, EXCEED ANY SUMS PAID BY YOU TO DIODES FOR THE SM DATA. *SRC=2DA1774R;DI_2DA1774R;BJTs PNP; Si; 50.0V 0.150A 250MHz Diodes Inc. Bipolar Transistor .MODEL DI_2DA1774R PNP (IS=15.2f NF=1.00 BF=523 VAF=127 + IKF=54.7m ISE=3.88p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.710 RB=2.84 RC=0.284 + XTB=1.5 CJE=42.6p VJE=1.10 MJE=0.500 CJC=13.7p VJC=0.300 + MJC=0.300 TF=453p TR=96.4n EG=1.12 ) * *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG *SIMULATOR=PSPICE *DATE=08/01/2009 *VERSION=1 * .MODEL 2DA1797 PNP IS=2.715E-13 BF=170 VAF=70 NF=1.004 IKF=2.75 ISE=1E-13 + NE=1.535 BR=23 VAR=40 NR=1.005 IKR=.55 ISC=5.15E-14 NC=1.13 RB=.07 + RE=.065 RC=.085 CJE=360E-12 TF=.94E-9 CJC=90E-12 TR=60E-9 VJC=.705 + MJC=.46 * *$ * *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG *SIMULATOR=PSPICE *DATE=08/01/2009 *VERSION=1 * .MODEL 2DA1797 PNP IS=2.715E-13 BF=170 VAF=70 NF=1.004 IKF=2.75 ISE=1E-13 + NE=1.535 BR=23 VAR=40 NR=1.005 IKR=.55 ISC=5.15E-14 NC=1.13 RB=.07 + RE=.065 RC=.085 CJE=360E-12 TF=.94E-9 CJC=90E-12 TR=60E-9 VJC=.705 + MJC=.46 * *$ *SRC=2DB1132R;DI_2DB1132R;BJTs PNP; Si; 32.0V 1.00A 200MHz - .MODEL DI_2DB1132R NPN (IS=3.90f NF=1.00 BF=302 VAF=102 + IKF=0.989 ISE=6.63f NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=1.50 RE=96.5m RB=0.386 RC=38.6m + XTB=1.5 CJE=127p VJE=1.10 MJE=0.500 CJC=32.4p VJC=0.300 + MJC=0.300 TF=741p TR=123n EG=1.12 ) *DIODES_INC_SPICE_MODEL 2DB1182Q *SIMULATOR=SIMETRIX *ORIGIN=DZSL_DPG_SU *DATE=6Nov2012 *VERSION=1 .MODEL 2DB1182Q PNP (IS=24E-14 NF=1.00 BF=200 ISE=10E-15 NE=1.28 VAF=127 + IKF=3.34 BR=16.00 NR=1.00 ISC=30E-15 NC=1 + VAR=20.0 IKR=5.25 RE=33.2m RB=0.133 RC=33.3m + XTB=1.5 CJE=411p VJE=.75 MJE=0.37 CJC=93.24p VJC=0.500 + MJC=0.3300 TF=1.27n TR=230n EG=1.2 XTI=3) * (c) 2012 Diodes Inc * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL * *DIODES_INC_SPICE_MODEL 2DB1184Q *SIMULATOR=SIMETRIX *ORIGIN=DZSL_DPG_SU *DATE=29Nov2012 *VERSION=1 .MODEL 2DB1184Q PNP (IS=24E-14 NF=1.00 BF=200 ISE=10E-15 NE=1.28 VAF=127 + IKF=3.34 BR=16.00 NR=1.00 ISC=30E-15 NC=1 + VAR=20.0 IKR=5.25 RE=33.2m RB=0.133 RC=33.3m + XTB=1.5 CJE=411p VJE=.75 MJE=0.37 CJC=93.24p VJC=0.500 + MJC=0.3300 TF=1.27n TR=230n EG=1.2 XTI=3) * (c) 2012 Diodes Inc * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL * *SRC=2DC2412R;DI_2DC2412R;BJTs NPN; Si; 50.0V 0.150A 200MHz Diodes Inc. Bipolar Transistor .MODEL DI_2DC2412R NPN (IS=15.5f NF=1.00 BF=524 VAF=127 + IKF=54.7m ISE=3.90p NE=2.00 BR=4.00 NR=1.00 + VAR=28.0 IKR=0.135 RE=0.290 RB=1.16 RC=0.116 + XTB=1.5 CJE=22.7p VJE=1.10 MJE=0.500 CJC=7.34p VJC=0.300 + MJC=0.300 TF=698p TR=121n EG=1.12 ) *SRC=2DC4617QLP;DI_2DC4617QLP;BJTs NPN; Si; 50.0V 0.100A 200MHz .MODEL DI_2DC4617QLP NPN (IS=1.21f NF=1.00 BF=202 VAF=127 + IKF=98.0m ISE=5.55f NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=0.150 RE=0.575 RB=2.30 RC=0.230 + XTB=1.5 CJE=15.6p VJE=1.10 MJE=0.500 CJC=6.12p VJC=0.300 + MJC=0.300 TF=765p TR=126n EG=1.12 ) *SRC=2DC4617R;DI_2DC4617R;BJTs NPN; Si; 50.0V 0.150A 200MHz Diodes Inc. Bipolar Transistor .MODEL DI_2DC4617R NPN (IS=15.5f NF=1.00 BF=524 VAF=127 + IKF=54.7m ISE=3.90p NE=2.00 BR=4.00 NR=1.00 + VAR=28.0 IKR=0.135 RE=0.290 RB=1.16 RC=0.116 + XTB=1.5 CJE=22.7p VJE=1.10 MJE=0.500 CJC=7.34p VJC=0.300 + MJC=0.300 TF=698p TR=121n EG=1.12 ) * *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG *SIMULATOR=PSPICE *DATE=09/01/2009 *VERSION=1 * .MODEL 2DC4672 NPN IS=2.218E-13 NF=.9956 BF=230 IKF=2 VAF=100 ISE=2.9E-14 + NE=1.35 NR=.995 BR=56 IKR=1 VAR=30 ISC=2.971E-13 NC=1.321 RB=.04 + RE=.075 RC=.069 CJC=51E-12 MJC=.42 VJC=.595 CJE=318E-12 TF=.77E-9 + TR=27E-9 * *$ * *DIODES_INC_SPICE_MODEL 2DD1664R *ORIGIN=DZSL_DPG_SU *SIMULATOR=PSPICE *DATE=14/07/2014 *VERSION=1 .MODEL DD1664R NPN IS=150E-15 NF=1 BF=224 + ISE=1E-15 NE=1.35 NR=1 BR=28 ISC=6E-14 IKF=5 NK=.52 VAF=30 + NC=1.3 RB=0.5 RE=0.1 RC=0.134 QUASIMOD=1 RCO=1 GAMMA=50E-11 VO=10 + CJC=36.5E-12 MJC=0.36 VJC=0.55 CJE=139.4E-12 MJE=0.36 VJE=0.7 + TF=1.3E-9 TR=16E-6 TRC1=.004 TRB1=.004 TRE1=.004 XTB=1.2 *QUASIMOD=1 RCO=80 GAMMA=4E-7 IKR=0.7 VAR=64 *$ * (c) 2014 Diodes Inc * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL * * *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG *SIMULATOR=PSPICE *DATE=08/01/2009 *VERSION=1 * .MODEL 2DD2656 NPN IS=2.61E-13 BF=550 IKF=0.99 VAF=84 + ISE=7.17E-14 NE=1.4148 BR=110 IKR=0.63 VAR=51 ISC=2.25E-12 + NC=1.45 RB=0.093 RE=0.073 RC=0.083 CJC=18E-12 MJC=0.371 + VJC=0.435 CJE=97.7E-12 TF=0.78E-9 TR=9E-9 * *$ * *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG *SIMULATOR=PSPICE *DATE=09/01/2009 *VERSION=1 * .MODEL 2DD2679 NPN IS=5.1E-13 BF=480 NF=1 VAF=99 IKF=3.3 ISE=1.2E-13 + NE=1.49 BR=65 NR=1 VAR=24 IKR=1 ISC=1.1E-13 NC=1.31 RE=0.0115 RB=0.15 RC=0.012 + CJE=192E-12 VJE=0.75 MJE=0.38 CJC=35E-12 VJC=0.47 MJC=0.34 TF=0.62E-9 TR=20E-9 + RCO=1.9 GAMMA=1E-8 QUASIMOD=1 XTB=1.35 TRE1=0.005 TRB1=0.005 TRC1=0.005 * *$ *SRC=BC807-16;DI_BC807-16;BJTs PNP; Si; 45.0V 0.500A 220MHz Diodes Inc. BJTs .MODEL DI_BC807-16 PNP (IS=50.7f NF=1.00 BF=342 VAF=121 + IKF=0.273 ISE=24.2p NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=0.675 RE=0.213 RB=0.852 RC=85.2m + XTB=1.5 CJE=107p VJE=1.10 MJE=0.500 CJC=34.7p VJC=0.300 MJC=0.300 + TF=631p TR=111n EG=1.12 ) *SRC=BC807-16W;DI_BC807-16W;BJTs PNP; Si; 45.0V 0.500A 163MHz Diodes Inc. PNP BJT .MODEL DI_BC807-16W NPN (IS=49.9f NF=1.00 BF=342 VAF=121 + IKF=0.182 ISE=19.6p NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=0.450 RE=0.663 RB=2.65 RC=0.265 + XTB=1.5 CJE=107p VJE=1.10 MJE=0.500 CJC=34.7p VJC=0.300 + MJC=0.300 TF=841p TR=112n EG=1.12 *SRC=BC807-25;DI_BC807-25;BJTs PNP; Si; 45.0V 0.500A 220MHz Diodes Inc. BJTs .MODEL DI_BC807-25 PNP (IS=50.7f NF=1.00 BF=547 VAF=121 + IKF=0.273 ISE=15.1p NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=0.675 RE=0.213 RB=0.852 RC=85.2m + XTB=1.5 CJE=107p VJE=1.10 MJE=0.500 CJC=34.7p VJC=0.300 MJC=0.300 + TF=631p TR=109n EG=1.12 ) *SRC=BC807-25W;DI_BC807-25W;BJTs PNP; Si; 45.0V 0.500A 163MHz Diodes Inc. PNP BJT .MODEL DI_BC807-25W NPN (IS=49.9f NF=1.00 BF=547 VAF=121 + IKF=0.182 ISE=12.3p NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=0.450 RE=0.663 RB=2.65 RC=0.265 + XTB=1.5 CJE=107p VJE=1.10 MJE=0.500 CJC=34.7p VJC=0.300 + MJC=0.300 TF=841p TR=110n EG=1.12 ) *SRC=BC807-40;DI_BC807-40;BJTs PNP; Si; 45.0V 0.500A 220MHz Diodes Inc. BJTs .MODEL DI_BC807-40 PNP (IS=50.7f NF=1.00 BF=821 VAF=121 + IKF=0.273 ISE=10.1p NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=0.675 RE=0.213 RB=0.852 RC=85.2m + XTB=1.5 CJE=107p VJE=1.10 MJE=0.500 CJC=34.7p VJC=0.300 MJC=0.300 + TF=631p TR=108n EG=1.12 ) *SRC=BC807-40;DI_BC807-40;BJTs PNP; Si; 45.0V 0.500A 220MHz Diodes Inc. BJTs .MODEL DI_BC807-40 PNP (IS=50.7f NF=1.00 BF=821 VAF=121 + IKF=0.273 ISE=10.1p NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=0.675 RE=0.213 RB=0.852 RC=85.2m + XTB=1.5 CJE=107p VJE=1.10 MJE=0.500 CJC=34.7p VJC=0.300 MJC=0.300 + TF=631p TR=108n EG=1.12 ) *SRC=BC807-40W;DI_BC807-40W;BJTs PNP; Si; 45.0V 0.500A 163MHz Diodes Inc. PNP BJT .MODEL DI_BC807-40W NPN (IS=49.9f NF=1.00 BF=821 VAF=121 + IKF=0.182 ISE=8.17p NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=0.450 RE=0.663 RB=2.65 RC=0.265 + XTB=1.5 CJE=107p VJE=1.10 MJE=0.500 CJC=34.7p VJC=0.300 + MJC=0.300 TF=841p TR=109n EG=1.12 ) *SRC=BC817-16;DI_BC817-16;BJTs NPN; Si; 45.0V 0.800A 220MHz Diodes Inc. BJTs .MODEL DI_BC817-16 NPN (IS=4.04n NF=1.00 BF=342 VAF=121 + IKF=0.273 ISE=6.86n NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=0.675 RE=0.227 RB=0.907 RC=90.7m + XTB=1.5 CJE=107p VJE=1.10 MJE=0.500 CJC=34.7p VJC=0.300 MJC=0.300 + TF=651p TR=111n EG=1.12 ) *SRC=BC817-16;DI_BC817-16;BJTs NPN; Si; 45.0V 0.800A 220MHz Diodes Inc. BJTs .MODEL DI_BC817-16 NPN (IS=4.04n NF=1.00 BF=342 VAF=121 + IKF=0.273 ISE=6.86n NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=0.675 RE=0.227 RB=0.907 RC=90.7m + XTB=1.5 CJE=107p VJE=1.10 MJE=0.500 CJC=34.7p VJC=0.300 MJC=0.300 + TF=651p TR=111n EG=1.12 ) *SRC=BC807-16W;DI_BC807-16W;BJTs PNP; Si; 45.0V 0.500A 163MHz Diodes Inc. PNP BJT .MODEL DI_BC807-16W NPN (IS=49.9f NF=1.00 BF=342 VAF=121 + IKF=0.182 ISE=19.6p NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=0.450 RE=0.663 RB=2.65 RC=0.265 + XTB=1.5 CJE=107p VJE=1.10 MJE=0.500 CJC=34.7p VJC=0.300 + MJC=0.300 TF=841p TR=112n EG=1.12 *SRC=BC817-25;DI_BC817-25;BJTs NPN; Si; 45.0V 0.800A 220MHz Diodes Inc. BJTs .MODEL DI_BC817-25 NPN (IS=4.04n NF=1.00 BF=548 VAF=121 + IKF=0.273 ISE=4.29n NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=0.675 RE=0.227 RB=0.907 RC=90.7m + XTB=1.5 CJE=107p VJE=1.10 MJE=0.500 CJC=34.7p VJC=0.300 MJC=0.300 + TF=651p TR=109n EG=1.12 ) *SRC=BC817-25;DI_BC817-25;BJTs NPN; Si; 45.0V 0.800A 220MHz Diodes Inc. BJTs .MODEL DI_BC817-25 NPN (IS=4.04n NF=1.00 BF=548 VAF=121 + IKF=0.273 ISE=4.29n NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=0.675 RE=0.227 RB=0.907 RC=90.7m + XTB=1.5 CJE=107p VJE=1.10 MJE=0.500 CJC=34.7p VJC=0.300 MJC=0.300 + TF=651p TR=109n EG=1.12 ) *SRC=BC807-25W;DI_BC807-25W;BJTs PNP; Si; 45.0V 0.500A 163MHz Diodes Inc. PNP BJT .MODEL DI_BC807-25W NPN (IS=49.9f NF=1.00 BF=547 VAF=121 + IKF=0.182 ISE=12.3p NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=0.450 RE=0.663 RB=2.65 RC=0.265 + XTB=1.5 CJE=107p VJE=1.10 MJE=0.500 CJC=34.7p VJC=0.300 + MJC=0.300 TF=841p TR=110n EG=1.12 ) *SRC=BC817-40;DI_BC817-40;BJTs NPN; Si; 45.0V 0.800A 220MHz Diodes Inc. BJTs .MODEL DI_BC817-40 NPN (IS=4.04n NF=1.00 BF=822 VAF=121 + IKF=0.273 ISE=2.86n NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=0.675 RE=0.227 RB=0.907 RC=90.7m + XTB=1.5 CJE=107p VJE=1.10 MJE=0.500 CJC=34.7p VJC=0.300 MJC=0.300 + TF=651p TR=108n EG=1.12 ) *SRC=BC817-40;DI_BC817-40;BJTs NPN; Si; 45.0V 0.800A 220MHz Diodes Inc. BJTs .MODEL DI_BC817-40 NPN (IS=4.04n NF=1.00 BF=822 VAF=121 + IKF=0.273 ISE=2.86n NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=0.675 RE=0.227 RB=0.907 RC=90.7m + XTB=1.5 CJE=107p VJE=1.10 MJE=0.500 CJC=34.7p VJC=0.300 MJC=0.300 + TF=651p TR=108n EG=1.12 ) *SRC=BC807-40W;DI_BC807-40W;BJTs PNP; Si; 45.0V 0.500A 163MHz Diodes Inc. PNP BJT .MODEL DI_BC807-40W NPN (IS=49.9f NF=1.00 BF=821 VAF=121 + IKF=0.182 ISE=8.17p NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=0.450 RE=0.663 RB=2.65 RC=0.265 + XTB=1.5 CJE=107p VJE=1.10 MJE=0.500 CJC=34.7p VJC=0.300 + MJC=0.300 TF=841p TR=109n EG=1.12 ) *SRC=BC847A;DI_BC847A;BJTs NPN; Si; 45.0V 0.100A 300MHz Diodes Inc BJTs .MODEL DI_BC847A NPN (IS=10.2f NF=1.00 BF=301 VAF=121 + IKF=60.7m ISE=5.82p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.150 RE=0.915 RB=3.66 RC=0.366 + XTB=1.5 CJE=26.8p VJE=1.10 MJE=0.500 CJC=8.67p VJC=0.300 MJC=0.300 + TF=427p TR=50.3n EG=1.12 ) *SRC=BC847A;DI_BC847A;BJTs NPN; Si; 45.0V 0.100A 300MHz Diodes Inc BJTs .MODEL DI_BC847A NPN (IS=10.2f NF=1.00 BF=301 VAF=121 + IKF=60.7m ISE=5.82p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.150 RE=0.915 RB=3.66 RC=0.366 + XTB=1.5 CJE=26.8p VJE=1.10 MJE=0.500 CJC=8.67p VJC=0.300 MJC=0.300 + TF=427p TR=50.3n EG=1.12 ) *SRC=BC847AT;DI_BC847AT;BJTs NPN; Si; 45.0V 0.100A 300MHz Diodes Inc BJTs .MODEL DI_BC847AT NPN (IS=9.98f NF=1.00 BF=301 VAF=121 + IKF=60.7m ISE=5.75p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.150 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=26.8p VJE=1.10 MJE=0.500 CJC=13.0p VJC=0.300 MJC=0.300 + TF=423p TR=50.3n EG=1.12 ) *SRC=BC847AW;DI_BC847AW;BJTs NPN; Si; 45.0V 0.100A 300MHz Diodes Inc BJTs .MODEL DI_BC847AW NPN (IS=10.2f NF=1.00 BF=301 VAF=121 + IKF=60.7m ISE=5.82p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.150 RE=0.915 RB=3.66 RC=0.366 + XTB=1.5 CJE=26.8p VJE=1.10 MJE=0.500 CJC=8.67p VJC=0.300 MJC=0.300 + TF=427p TR=50.3n EG=1.12 ) *SRC=BC847B;DI_BC847B;BJTs NPN; Si; 45.0V 0.100A 300MHz Diodes, Inc. transistor .MODEL DI_BC847B NPN (IS=3.75f NF=1.00 BF=1.61k VAF=121 + IKF=8.79m ISE=8.38p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=90.0m RE=0.765 RB=3.06 RC=0.306 + XTB=1.5 CJE=13.3p VJE=1.10 MJE=0.500 CJC=8.67p VJC=0.300 + MJC=0.300 TF=520p TR=78.9n EG=1.12 ) *DIODES_INC_SPICE_MODEL BC847BFA *SIMULATOR=SIMETRIX *ORIGIN=DZSL_DPG_IM *DATE=10Jul2013 *VERSION=1.0 .MODEL BC847BFA NPN (IS=6E-15 NF=.99 BF=350 ISE=400E-18 NE=1.15 BR=1.8 NR=.97 NC=1.1 ISC=10E-15 RE=0.15 RB=4 RC=0.2 CJE=9p VJE=.7 MJE=0.3 CJC=3.146p VJC=0.500 MJC=0.2200 VAF=40 IKF=48m VAR=24.0 IKR=90.0m) * (c) 2013 Diodes Inc * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL * *DIODES_INC_SPICE_MODEL BC847BFA *SIMULATOR=SIMETRIX *ORIGIN=DZSL_DPG_IM *DATE=10Jul2013 *VERSION=1.0 .MODEL BC847BFA NPN (IS=6E-15 NF=.99 BF=350 ISE=400E-18 NE=1.15 BR=1.8 NR=.97 NC=1.1 ISC=10E-15 RE=0.15 RB=4 RC=0.2 CJE=9p VJE=.7 MJE=0.3 CJC=3.146p VJC=0.500 MJC=0.2200 VAF=40 IKF=48m VAR=24.0 IKR=90.0m) * (c) 2013 Diodes Inc * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL * *DIODES_INC_SPICE_MODEL BC847BFAQ *SIMULATOR=SIMETRIX *ORIGIN=DZSL_DPG_IM *DATE=10Jul2013_package updated Jan2019 *VERSION=1.0 .MODEL BC847BFAQ NPN (IS=6E-15 NF=.99 BF=350 ISE=400E-18 NE=1.15 BR=1.8 NR=.97 NC=1.1 ISC=10E-15 RE=0.15 RB=4 RC=0.2 CJE=9p VJE=.7 MJE=0.3 CJC=3.146p VJC=0.500 MJC=0.2200 VAF=40 IKF=48m VAR=24.0 IKR=90.0m) * (c) 2013 Diodes Inc * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL * *DIODES_INC_SPICE_MODEL BC847BFZ *SIMULATOR=SIMETRIX *ORIGIN=DZSL_DPG_IM *DATE=10Jul2013_package updated Jan2019 *VERSION=1.0 .MODEL BC847BFZ NPN (IS=6E-15 NF=.99 BF=350 ISE=400E-18 NE=1.15 BR=1.8 NR=.97 NC=1.1 ISC=10E-15 RE=0.15 RB=4 RC=0.2 CJE=9p VJE=.7 MJE=0.3 CJC=3.146p VJC=0.500 MJC=0.2200 VAF=40 IKF=48m VAR=24.0 IKR=90.0m) * (c) 2013 Diodes Inc * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL * *SRC=BC847BLP;DI_BC847BLP;BJTs NPN; Si; 45.0V 0.100A 280MHz - .MODEL DI_BC847BLP NPN (IS=5.62f NF=1.00 BF=450 VAF=121 + IKF=70.3m ISE=191f NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.120 RE=0.700 RB=2.80 RC=0.280 + XTB=1.5 CJE=14.6p VJE=1.10 MJE=0.500 CJC=6.93p VJC=0.300 + MJC=0.300 TF=541p TR=86.5n EG=1.12 ) *SRC=BC847BLP4;DI_BC847BLP4;BJTs NPN; Si; 45.0V 0.100A 450MHz .MODEL DI_BC847BLP4 NPN (IS=2.31f NF=1.00 BF=425 VAF=121 + IKF=58.6m ISE=3.67f NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=90.0m RE=0.700 RB=2.80 RC=0.280 + XTB=1.5 CJE=14.9p VJE=1.10 MJE=0.500 CJC=6.07p VJC=0.300 + MJC=0.300 TF=294p TR=53.9n EG=1.12 ) *SRC=BC847B;DI_BC847B;BJTs NPN; Si; 45.0V 0.100A 300MHz Diodes, Inc. transistor .MODEL DI_BC847B NPN (IS=3.75f NF=1.00 BF=1.61k VAF=121 + IKF=8.79m ISE=8.38p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=90.0m RE=0.765 RB=3.06 RC=0.306 + XTB=1.5 CJE=13.3p VJE=1.10 MJE=0.500 CJC=8.67p VJC=0.300 + MJC=0.300 TF=520p TR=78.9n EG=1.12 ) *SRC=BC847BS;DI_BC847BS;BJTs NPN; Si; 45.0V 0.100A 250MHz Diodes Inc. BJTs .MODEL DI_BC847BS NPN (IS=9.98f NF=1.00 BF=616 VAF=121 + IKF=60.7m ISE=2.81p NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=0.150 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=13.3p VJE=1.10 MJE=0.500 CJC=4.33p VJC=0.300 MJC=0.300 + TF=585p TR=49.1n EG=1.12 ) *SRC=BC847BS;DI_BC847BS;BJTs NPN; Si; 45.0V 0.100A 250MHz Diodes Inc. BJTs .MODEL DI_BC847BS NPN (IS=9.98f NF=1.00 BF=616 VAF=121 + IKF=60.7m ISE=2.81p NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=0.150 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=13.3p VJE=1.10 MJE=0.500 CJC=4.33p VJC=0.300 MJC=0.300 + TF=585p TR=49.1n EG=1.12 ) *SRC=BC847BT;DI_BC847BT;BJTs NPN; Si; 45.0V 0.100A 300MHz Diodes Inc BJTs .MODEL DI_BC847BT NPN (IS=9.98f NF=1.00 BF=616 VAF=121 + IKF=60.7m ISE=2.81p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.150 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=26.8p VJE=1.10 MJE=0.500 CJC=13.0p VJC=0.300 MJC=0.300 + TF=423p TR=49.1n EG=1.12 ) *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG_PH *SIMULATOR=SIMETRIX *DATE=13OCT2019 *VERSION=1 * .MODEL BC847BTQ NPN + IS=9.98f + NF=1.00 + BF=616 + VAF=121 + IKF=60.7m + ISE=2.81p + NE=2.00 + BR=4.00 + NR=1.00 + VAR=24.0 + IKR=0.150 + RE=0.815 + RB=3.26 + RC=0.326 + XTB=1.5 + CJE=26.8p + VJE=1.10 + MJE=0.500 + CJC=13.0p + VJC=0.300 + MJC=0.300 + TF=423p + TR=49.1n + EG=1.12 * (c) 2019 Diodes Inc * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability = intrinsic base-intrinsic emitter voltage * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL *SRC=BC847BVC;DI_BC847BVC;BJTs NPN; Si; 45.0V 0.100A 300MHz Diodes, Inc. transistor .MODEL DI_BC847BVC NPN (IS=3.75f NF=1.00 BF=1.61k VAF=121 + IKF=8.79m ISE=8.38p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=90.0m RE=0.765 RB=3.06 RC=0.306 + XTB=1.5 CJE=13.3p VJE=1.10 MJE=0.500 CJC=8.67p VJC=0.300 + MJC=0.300 TF=520p TR=78.9n EG=1.12 ) *SRC=BC847BVC;DI_BC847BVC;BJTs NPN; Si; 45.0V 0.100A 300MHz Diodes, Inc. transistor .MODEL DI_BC847BVC NPN (IS=3.75f NF=1.00 BF=1.61k VAF=121 + IKF=8.79m ISE=8.38p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=90.0m RE=0.765 RB=3.06 RC=0.306 + XTB=1.5 CJE=13.3p VJE=1.10 MJE=0.500 CJC=8.67p VJC=0.300 + MJC=0.300 TF=520p TR=78.9n EG=1.12 ) *DIODES_INC_SPICE_MODEL BC847BW *SIMULATOR=SIMETRIX *ORIGIN=DZSL_DPG_IM *DATE=10Jul2013_package updated Jan2019 *VERSION=1.0 .MODEL BC847BW NPN (IS=6E-15 NF=.99 BF=350 ISE=400E-18 NE=1.15 BR=1.8 NR=.97 NC=1.1 ISC=10E-15 RE=0.15 RB=4 RC=0.2 CJE=9p VJE=.7 MJE=0.3 CJC=3.146p VJC=0.500 MJC=0.2200 VAF=40 IKF=48m VAR=24.0 IKR=90.0m) * (c) 2013 Diodes Inc * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL * *DIODES_INC_SPICE_MODEL BC847BW *SIMULATOR=SIMETRIX *ORIGIN=DZSL_DPG_IM *DATE=10Jul2013_package updated Jan2019 *VERSION=1.0 .MODEL BC847BW NPN (IS=6E-15 NF=.99 BF=350 ISE=400E-18 NE=1.15 BR=1.8 NR=.97 NC=1.1 ISC=10E-15 RE=0.15 RB=4 RC=0.2 CJE=9p VJE=.7 MJE=0.3 CJC=3.146p VJC=0.500 MJC=0.2200 VAF=40 IKF=48m VAR=24.0 IKR=90.0m) * (c) 2013 Diodes Inc * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL * *SRC=BC847C;DI_BC847C;BJTs NPN; Si; 45.0V 0.100A 300MHz Diodes Inc BJTs .MODEL DI_BC847C NPN (IS=10.3f NF=1.00 BF=1.09k VAF=121 + IKF=60.7m ISE=1.61p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.150 RE=0.965 RB=3.86 RC=0.386 + XTB=1.5 CJE=26.8p VJE=1.10 MJE=0.500 CJC=8.67p VJC=0.300 MJC=0.300 + TF=427p TR=48.6n EG=1.12 ) *SRC=BC847CDLP;DI_BC847CDLP;BJTs NPN; Si; 45.0V 0.100A 300MHz Diodes Inc .MODEL DI_BC847CDLP NPN (IS=10.2f NF=1.00 BF=1.09k VAF=121 + IKF=36.4m ISE=1.24p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=90.0m RE=0.490 RB=1.96 RC=0.196 + XTB=1.5 CJE=13.4p VJE=1.10 MJE=0.500 CJC=5.92p VJC=0.300 + MJC=0.300 TF=481p TR=79.2n EG=1.12 ) *SRC=BC847C;DI_BC847C;BJTs NPN; Si; 45.0V 0.100A 300MHz Diodes Inc BJTs .MODEL DI_BC847C NPN (IS=10.3f NF=1.00 BF=1.09k VAF=121 + IKF=60.7m ISE=1.61p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.150 RE=0.965 RB=3.86 RC=0.386 + XTB=1.5 CJE=26.8p VJE=1.10 MJE=0.500 CJC=8.67p VJC=0.300 MJC=0.300 + TF=427p TR=48.6n EG=1.12 ) *SRC=BC847CT;DI_BC847CT;BJTs NPN; Si; 45.0V 0.100A 300MHz Diodes Inc BJTs .MODEL DI_BC847CT NPN (IS=9.98f NF=1.00 BF=1.09k VAF=121 + IKF=60.7m ISE=1.58p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.150 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=26.8p VJE=1.10 MJE=0.500 CJC=13.0p VJC=0.300 MJC=0.300 + TF=423p TR=48.6n EG=1.12 ) *SRC=BC847CW;DI_BC847CW;BJTs NPN; Si; 45.0V 0.100A 300MHz Diodes Inc BJTs .MODEL DI_BC847CW NPN (IS=10.2f NF=1.00 BF=1.09k VAF=121 + IKF=60.7m ISE=1.60p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.150 RE=0.915 RB=3.66 RC=0.366 + XTB=1.5 CJE=26.8p VJE=1.10 MJE=0.500 CJC=8.67p VJC=0.300 MJC=0.300 + TF=427p TR=48.6n EG=1.12 ) *SRC=BC847CW;DI_BC847CW;BJTs NPN; Si; 45.0V 0.100A 300MHz Diodes Inc BJTs .MODEL DI_BC847CW NPN (IS=10.2f NF=1.00 BF=1.09k VAF=121 + IKF=60.7m ISE=1.60p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.150 RE=0.915 RB=3.66 RC=0.366 + XTB=1.5 CJE=26.8p VJE=1.10 MJE=0.500 CJC=8.67p VJC=0.300 MJC=0.300 + TF=427p TR=48.6n EG=1.12 ) *SRC=BC848A;DI_BC848A;BJTs NPN; Si; 30.0V 0.100A 300MHz Diodes Inc BJTs .MODEL DI_BC848A NPN (IS=10.2f NF=1.00 BF=1.09k VAF=98.6 + IKF=60.7m ISE=1.60p NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=0.150 RE=0.915 RB=3.66 RC=0.366 + XTB=1.5 CJE=26.8p VJE=1.10 MJE=0.500 CJC=8.67p VJC=0.300 MJC=0.300 + TF=427p TR=48.6n EG=1.12 ) *SRC=BC848AW;DI_BC848AW;BJTs NPN; Si; 30.0V 0.100A 300MHz Diodes Inc BJTs .MODEL DI_BC848AW NPN (IS=10.2f NF=1.00 BF=1.09k VAF=98.6 + IKF=60.7m ISE=1.60p NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=0.150 RE=0.915 RB=3.66 RC=0.366 + XTB=1.5 CJE=26.8p VJE=1.10 MJE=0.500 CJC=8.67p VJC=0.300 MJC=0.300 + TF=427p TR=48.6n EG=1.12 ) *SRC=BC848B;DI_BC848B;BJTs NPN; Si; 30.0V 0.100A 300MHz Diodes Inc BJTs .MODEL DI_BC848B NPN (IS=10.2f NF=1.00 BF=616 VAF=98.6 + IKF=60.7m ISE=2.84p NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=0.150 RE=0.915 RB=3.66 RC=0.366 + XTB=1.5 CJE=26.8p VJE=1.10 MJE=0.500 CJC=8.67p VJC=0.300 MJC=0.300 + TF=427p TR=49.1n EG=1.12 ) *SRC=BC848BW;DI_BC848BW;BJTs NPN; Si; 30.0V 0.100A 300MHz Diodes Inc BJTs .MODEL DI_BC848BW NPN (IS=10.2f NF=1.00 BF=616 VAF=98.6 + IKF=60.7m ISE=2.84p NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=0.150 RE=0.915 RB=3.66 RC=0.366 + XTB=1.5 CJE=26.8p VJE=1.10 MJE=0.500 CJC=8.67p VJC=0.300 MJC=0.300 + TF=427p TR=49.1n EG=1.12 ) *SRC=BC848C;DI_BC848C;BJTs NPN; Si; 30.0V 0.100A 300MHz Diodes Inc BJTs .MODEL DI_BC848C NPN (IS=10.2f NF=1.00 BF=1.09k VAF=98.6 + IKF=60.7m ISE=1.60p NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=0.150 RE=0.915 RB=3.66 RC=0.366 + XTB=1.5 CJE=26.8p VJE=1.10 MJE=0.500 CJC=8.67p VJC=0.300 MJC=0.300 + TF=427p TR=48.6n EG=1.12 ) *SRC=BC848C;DI_BC848C;BJTs NPN; Si; 30.0V 0.100A 300MHz Diodes Inc BJTs .MODEL DI_BC848C NPN (IS=10.2f NF=1.00 BF=1.09k VAF=98.6 + IKF=60.7m ISE=1.60p NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=0.150 RE=0.915 RB=3.66 RC=0.366 + XTB=1.5 CJE=26.8p VJE=1.10 MJE=0.500 CJC=8.67p VJC=0.300 MJC=0.300 + TF=427p TR=48.6n EG=1.12 ) *SRC=BC848CW;DI_BC848CW;BJTs NPN; Si; 30.0V 0.100A 300MHz Diodes Inc BJTs .MODEL DI_BC848CW NPN (IS=10.2f NF=1.00 BF=1.09k VAF=98.6 + IKF=60.7m ISE=1.60p NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=0.150 RE=0.915 RB=3.66 RC=0.366 + XTB=1.5 CJE=26.8p VJE=1.10 MJE=0.500 CJC=8.67p VJC=0.300 MJC=0.300 + TF=427p TR=48.6n EG=1.12 ) *SRC=BC857A;DI_BC857A;BJTs PNP; Si; 45.0V 0.100A 250MHz Diodes Inc. BJTs .MODEL DI_BC857A PNP (IS=10.2f NF=1.00 BF=342 VAF=121 + IKF=72.9m ISE=5.59p NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=0.180 RE=0.715 RB=2.86 RC=0.286 + XTB=1.5 CJE=13.3p VJE=1.10 MJE=0.500 CJC=7.80p VJC=0.300 + MJC=0.300 TF=581p TR=97.8n EG=1.12 ) *SRC=BC857AT;DI_BC857AT;BJTs PNP; Si; 45.0V 0.100A 250MHz Diodes Inc. BJTs .MODEL DI_BC857AT PNP (IS=10.2f NF=1.00 BF=342 VAF=121 + IKF=72.9m ISE=5.59p NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=0.180 RE=0.715 RB=2.86 RC=0.286 + XTB=1.5 CJE=37.6p VJE=1.10 MJE=0.500 CJC=12.1p VJC=0.300 + MJC=0.300 TF=488p TR=97.8n EG=1.12 ) *SRC=BC857AW;DI_BC857AW;BJTs PNP; Si; 45.0V 0.100A 250MHz Diodes Inc. BJTs .MODEL DI_BC857AW PNP (IS=10.2f NF=1.00 BF=342 VAF=121 + IKF=72.9m ISE=5.59p NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=0.180 RE=0.715 RB=2.86 RC=0.286 + XTB=1.5 CJE=13.3p VJE=1.10 MJE=0.500 CJC=7.80p VJC=0.300 + MJC=0.300 TF=581p TR=97.8n EG=1.12 ) *SRC=BC857B;DI_BC857B;BJTs PNP; Si; 45.0V 0.100A 200MHz Diodes, Inc. transistor .MODEL DI_BC857B PNP (IS=5.51f NF=1.00 BF=424 VAF=121 + IKF=36.4m ISE=2.35p NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=90.0m RE=0.765 RB=3.06 RC=0.306 + XTB=1.5 CJE=26.9p VJE=1.10 MJE=0.500 CJC=8.67p VJC=0.300 + MJC=0.300 TF=700p TR=121n EG=1.12 ) *DIODES_INC_SPICE_MODEL BC857BFA *SIMULATOR=SIMETRIX *ORIGIN=DZSL_DPG_IM *DATE=10Jul2013 *VERSION=1.0 .MODEL BC857BFA PNP (IS=10E-15 NF=1 BF=180 ISE=2E-15 NE=1.45 BR=4 ISC=3E-15 NC=1.05 NR=1 CJC=5.45E-12 MJC=0.33 VJC=0.59 CJE=7.53E-12 MJE=0.36 VJE=0.73 RC=.2 RE=200m VAF=5 IKF=70m XTB=1.3 NK=.7) * (c) 2013 Diodes Inc * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL * *SRC=BC857BLP;DI_BC857BLP;BJTs PNP; Si; 45.0V 0.100A 490MHz Diodes Inc. BJT .MODEL DI_BC857BLP PNP (IS=3.72f NF=1.00 BF=650 VAF=121 + IKF=54.7m ISE=1.54p NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=0.135 RE=1.06 RB=4.26 RC=0.426 + XTB=1.5 CJE=26.8p VJE=1.10 MJE=0.500 CJC=8.67p VJC=0.300 + MJC=0.300 TF=221p TR=49.1n EG=1.12 ) *SRC=BC857BLP4;DI_BC857BLP4;BJTs PNP; Si; 45.0V 0.100A 220MHz .MODEL DI_BC857BLP4 PNP (IS=2.24f NF=1.00 BF=333 VAF=121 + IKF=98.0m ISE=4.59f NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=0.150 RE=1.14 RB=4.58 RC=0.458 + XTB=1.5 CJE=14.8p VJE=1.10 MJE=0.500 CJC=8.09p VJC=0.300 + MJC=0.300 TF=659p TR=111n EG=1.12 ) *SRC=BC857B;DI_BC857B;BJTs PNP; Si; 45.0V 0.100A 200MHz Diodes, Inc. transistor .MODEL DI_BC857B PNP (IS=5.51f NF=1.00 BF=424 VAF=121 + IKF=36.4m ISE=2.35p NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=90.0m RE=0.765 RB=3.06 RC=0.306 + XTB=1.5 CJE=26.9p VJE=1.10 MJE=0.500 CJC=8.67p VJC=0.300 + MJC=0.300 TF=700p TR=121n EG=1.12 ) *SRC=BC857BS;DI_BC857BS;BJTs PNP; Si; 45.0V 0.100A 250MHz Diodes Inc. BJTs - Single device of dual .MODEL DI_BC857BS PNP (IS=10.2f NF=1.00 BF=650 VAF=121 + IKF=42.5m ISE=2.25p NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=0.105 RE=0.715 RB=2.86 RC=0.286 + XTB=1.5 CJE=13.3p VJE=1.10 MJE=0.500 CJC=7.80p VJC=0.300 MJC=0.300 + TF=586p TR=95.9n EG=1.12 ) *SRC=BC857BS;DI_BC857BS;BJTs PNP; Si; 45.0V 0.100A 250MHz Diodes Inc. BJTs - Single device of dual .MODEL DI_BC857BS PNP (IS=10.2f NF=1.00 BF=650 VAF=121 + IKF=42.5m ISE=2.25p NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=0.105 RE=0.715 RB=2.86 RC=0.286 + XTB=1.5 CJE=13.3p VJE=1.10 MJE=0.500 CJC=7.80p VJC=0.300 MJC=0.300 + TF=586p TR=95.9n EG=1.12 ) *SRC=BC857BT;DI_BC857BT;BJTs PNP; Si; 45.0V 0.100A 200MHz Diodes, Inc. transistor .MODEL DI_BC857B PNP (IS=5.51f NF=1.00 BF=424 VAF=121 + IKF=36.4m ISE=2.35p NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=90.0m RE=0.765 RB=3.06 RC=0.306 + XTB=1.5 CJE=26.9p VJE=1.10 MJE=0.500 CJC=8.67p VJC=0.300 + MJC=0.300 TF=700p TR=121n EG=1.12 ) *SRC=BC857BV;DI_BC857BV;BJTs PNP; Si; 45.0V 0.100A 250MHz Diodes Inc. BJTs .MODEL DI_BC857BV PNP (IS=10.2f NF=1.00 BF=650 VAF=121 + IKF=42.5m ISE=2.25p NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=0.105 RE=0.715 RB=2.86 RC=0.286 + XTB=1.5 CJE=37.6p VJE=1.10 MJE=0.500 CJC=12.1p VJC=0.300 + MJC=0.300 TF=499p TR=95.9n EG=1.12 )=499p TR=95.9n EG=1.12 ) *SRC=BC857BW;DI_BC857BW;BJTs PNP; Si; 45.0V 0.100A 200MHz Diodes, Inc. transistor .MODEL DI_BC857BW PNP (IS=5.51f NF=1.00 BF=424 VAF=121 + IKF=36.4m ISE=2.35p NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=90.0m RE=0.765 RB=3.06 RC=0.306 + XTB=1.5 CJE=26.9p VJE=1.10 MJE=0.500 CJC=8.67p VJC=0.300 + MJC=0.300 TF=700p TR=121n EG=1.12 ) *SRC=BC857C;DI_BC857C;BJTs PNP; Si; 45.0V 0.100A 250MHz Diodes Inc. BJTs .MODEL DI_BC857C PNP (IS=10.2f NF=1.00 BF=1.09k VAF=121 + IKF=36.4m ISE=1.24p NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=90.0m RE=0.715 RB=2.86 RC=0.286 + XTB=1.5 CJE=13.3p VJE=1.10 MJE=0.500 CJC=7.80p VJC=0.300 + MJC=0.300 TF=587p TR=95.0n EG=1.12 ) *SRC=BC857C;DI_BC857C;BJTs PNP; Si; 45.0V 0.100A 250MHz Diodes Inc. BJTs .MODEL DI_BC857C PNP (IS=10.2f NF=1.00 BF=1.09k VAF=121 + IKF=36.4m ISE=1.24p NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=90.0m RE=0.715 RB=2.86 RC=0.286 + XTB=1.5 CJE=13.3p VJE=1.10 MJE=0.500 CJC=7.80p VJC=0.300 + MJC=0.300 TF=587p TR=95.0n EG=1.12 ) *SRC=BC857CT;DI_BC857CT;BJTs PNP; Si; 45.0V 0.100A 250MHz Diodes Inc. BJTs .MODEL DI_BC857CT PNP (IS=10.2f NF=1.00 BF=1.09k VAF=121 + IKF=36.4m ISE=1.24p NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=90.0m RE=0.715 RB=2.86 RC=0.286 + XTB=1.5 CJE=30.8p VJE=1.10 MJE=0.500 CJC=12.1p VJC=0.300 + MJC=0.300 TF=526p TR=95.0n EG=1.12 ) *SRC=BC857CW;DI_BC857CW;BJTs PNP; Si; 45.0V 0.100A 250MHz Diodes Inc. BJTs .MODEL DI_BC857CW PNP (IS=10.2f NF=1.00 BF=1.09k VAF=121 + IKF=36.4m ISE=1.24p NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=90.0m RE=0.715 RB=2.86 RC=0.286 + XTB=1.5 CJE=13.3p VJE=1.10 MJE=0.500 CJC=7.80p VJC=0.300 + MJC=0.300 TF=587p TR=95.0n EG=1.12 ) *SRC=BC858A;DIBC858A;BJTs PNP; Si; 30.0V 0.100A 250MHz Diodes Inc. BJTs .MODEL DIBC858A PNP (IS=10.2f NF=1.00 BF=342 VAF=98.6 + IKF=72.9m ISE=5.59p NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=0.180 RE=0.715 RB=2.86 RC=0.286 + XTB=1.5 CJE=13.3p VJE=1.10 MJE=0.500 CJC=7.80p VJC=0.300 + MJC=0.300 TF=581p TR=97.8n EG=1.12 ) *SRC=BC858AW;DI_BC858AW;BJTs PNP; Si; 30.0V 0.100A 250MHz Diodes Inc. BJTs .MODEL DI_BC858AW PNP (IS=10.2f NF=1.00 BF=342 VAF=98.6 + IKF=72.9m ISE=5.59p NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=0.180 RE=0.715 RB=2.86 RC=0.286 + XTB=1.5 CJE=13.3p VJE=1.10 MJE=0.500 CJC=7.80p VJC=0.300 + MJC=0.300 TF=581p TR=97.8n EG=1.12 ) *SRC=BC858B;DI_BC858B;BJTs PNP; Si; 30.0V 0.100A 250MHz Diodes Inc. BJTs .MODEL DI_BC858B PNP (IS=10.2f NF=1.00 BF=650 VAF=98.6 + IKF=42.5m ISE=2.25p NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=0.105 RE=0.715 RB=2.86 RC=0.286 + XTB=1.5 CJE=13.3p VJE=1.10 MJE=0.500 CJC=7.80p VJC=0.300 + MJC=0.300 TF=586p TR=95.9n EG=1.12 ) *SRC=BC858BW;DI_BC858BW;BJTs PNP; Si; 30.0V 0.100A 200MHz Diodes, Inc. transistor .MODEL DI_BC858BW PNP (IS=5.51f NF=1.00 BF=424 VAF=98.6 + IKF=36.4m ISE=2.35p NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=90.0m RE=0.765 RB=3.06 RC=0.306 + XTB=1.5 CJE=26.9p VJE=1.10 MJE=0.500 CJC=8.67p VJC=0.300 + MJC=0.300 TF=700p TR=121n EG=1.12 ) *SRC=BC858C;DI_BC858C;BJTs PNP; Si; 30.0V 0.100A 250MHz Diodes Inc. BJTs .MODEL DI_BC858C PNP (IS=10.2f NF=1.00 BF=1.09k VAF=98.6 + IKF=36.4m ISE=1.24p NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=90.0m RE=0.715 RB=2.86 RC=0.286 + XTB=1.5 CJE=13.3p VJE=1.10 MJE=0.500 CJC=7.80p VJC=0.300 + MJC=0.300 TF=587p TR=95.0n EG=1.12 ) *BCM857BS Spice models *SIMULATOR=SIMETRIX *ORIGIN=DZSL_DPG_PH *DATE= 12 February 2020 *VERSION=1 *#SIMETRIX ****************************************************************************** * This file contains 3 models: * BCM857BS_typ The typical model * BCM857BS_slow The -2% gain model * BCM857BS_fast The +2% gain model ****************************************************************************** * pin order C B E .subckt BCM857BS_fast 1 2 3 Q1 1 2 3 BCM857BS 0.93 .ends * pin order C B E .subckt BCM857BS_slow 1 2 3 Q1 1 2 3 BCM857BS 1.07 .ends * pin order C B E .subckt BCM857BS_typ 1 2 3 Q1 1 2 3 BCM857BS 1.00 .ends .MODEL BCM857BS PNP + IS=2e-14; + NF=1.00; + BF=650; 350; + VAF=121; + IKF=472m; + NK=1; + ISE=11.6p; 3.6e-12; 2.58p; + NE=2.00; + BR=4.00; + NR=1.00; + ISC = 1.633E-14; + NC = 1.15; + VAR=20; + IKR=0.105; + RE=0.715; + RB=2.86; ;+ IRB=5.0u; ;+ RBM=5u; + RC=1.286; + CJE=37.6p + VJE=1.10; + MJE=0.500 + CJC=12.1p + VJC=0.400; + MJC=0.300 + TF=499p + TR=95.9n + EG=1.11 ; + XTB=1.4; + XTI=3.0; *BCM857BV Spice models *SIMULATOR=SIMETRIX *ORIGIN=DZSL_DPG_PH *DATE= 12 February 2020 *VERSION=1 *#SIMETRIX ****************************************************************************** * This file contains 3 models: * BCM857BV_typ The typical model * BCM857BV_slow The -2% gain model * BCM857BV_fast The +2% gain model ****************************************************************************** * pin order C B E .subckt BCM857BV_fast 1 2 3 Q1 1 2 3 BCM857BV 0.93 .ends * pin order C B E .subckt BCM857BV_slow 1 2 3 Q1 1 2 3 BCM857BV 1.07 .ends * pin order C B E .subckt BCM857BV_typ 1 2 3 Q1 1 2 3 BCM857BV 1.00 .ends .MODEL BCM857BV PNP + IS=2e-14; + NF=1.00; + BF=650; 350; + VAF=121; + IKF=472m; + NK=1; + ISE=11.6p; 3.6e-12; 2.58p; + NE=2.00; + BR=4.00; + NR=1.00; + ISC = 1.633E-14; + NC = 1.15; + VAR=20; + IKR=0.105; + RE=0.715; + RB=2.86; ;+ IRB=5.0u; ;+ RBM=5u; + RC=1.286; + CJE=37.6p + VJE=1.10; + MJE=0.500 + CJC=12.1p + VJC=0.400; + MJC=0.300 + TF=499p + TR=95.9n + EG=1.11 ; + XTB=1.4; + XTI=3.0; + QUASIMOD=1 +GAMMA=1e-11; +RCO=0.2; +VO=10.0; ; ---- restivity temperature effects ;+TRB1=1 ;+TRB2=1 +TRC1=0.001; ;+TRC2=0.00001; +TRE1=0.001; *ZETEX BCW68H Spice Model v1.0 Last Revised 8/8/05 * .MODEL BCW68H PNP IS =3.0572E-13 NF =1.0103 BF =450 IKF=0.93 VAF=20 +ISE=1.5E-14 NE =1.52 NR =1.007 BR =160 IKR=0.08 VAR=33 +ISC=3.8736E-14 NC =1.0893 RB =0.112 RE =0.144 RC =0.156 +CJC=42E-12 MJC=0.4449 VJC=0.3131 CJE=91E-12 +TF =0.51E-9 TR =3.6E-9 * *$ * *ZETEX BCW68H Spice Model v1.0 Last Revised 8/8/05 * .MODEL BCW68H PNP IS =3.0572E-13 NF =1.0103 BF =450 IKF=0.93 VAF=20 +ISE=1.5E-14 NE =1.52 NR =1.007 BR =160 IKR=0.08 VAR=33 +ISC=3.8736E-14 NC =1.0893 RB =0.112 RE =0.144 RC =0.156 +CJC=42E-12 MJC=0.4449 VJC=0.3131 CJE=91E-12 +TF =0.51E-9 TR =3.6E-9 * *$ * .MODEL BCW68H PNP IS =3.0572E-13 NF =1.0103 BF =450 IKF=0.93 VAF=20 +ISE=1.5E-14 NE =1.52 NR =1.007 BR =160 IKR=0.08 VAR=33 +ISC=3.8736E-14 NC =1.0893 RB =0.112 RE =0.144 RC =0.156 +CJC=42E-12 MJC=0.4449 VJC=0.3131 CJE=91E-12 +TF =0.51E-9 TR =3.6E-9 * *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG_PH *SIMULATOR=PSPICE *DATE=15Nov2019 *VERSION=1 * .MODEL BCX5116 PNP + IS=2E-13 + NF=1 + BF=300 + IKF=0.8 + VAF=44 + ISE=1E-13 + NE=1.4 + RCO=4.5 + GAMMA=5E-9 + NR=1 + BR=20 + IKR=0.2 + VAR=10 + ISC=2e-13 + NC=1.25 + RB=0.15 + RE=0.15 + RC=0.2 + QUASIMOD=1 + CJC=36E-12 + MJC=0.45 + VJC=0.75 + CJE=110E-12 + TF=0.8E-9 + TR=70e-9 + XTB=1.4 .ends * * (c) 2019 Diodes Inc * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL * *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG *SIMULATOR=PSPICE *DATE=16/04/2009 *VERSION=1 * .MODEL DJT4030P PNP IS=5.5e-13 NF=1 ISE=1.3e-13 NE=1.5 BF=360 + VAF=36 IKF=8 ISC=1.1e-13 NC=1.28 BR=55 VAR=6.6 IKR=1.4 RE=9e-3 + RB=300e-3 RC=9e-3 CJE=380e-12 VJE=0.7 MJE=0.4 CJC=111e-12 + VJC=0.4 MJC=0.35 TF=8.5e-10 TR=3.7e-9 XTB=1.6 QUASIMOD=1 + RCO=0.24 GAMMA=6e-10 * *$ *SRC=DMB2227A;DI_DMB2227A_NPN;BJTs NPN; Si; 40.0V 0.600A 410MHz - .MODEL DI_DMB2227A_NPN NPN (IS=9.69f NF=1.00 BF=272 VAF=114 + IKF=0.493 ISE=11.7f NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.750 RE=0.253 RB=1.01 RC=0.101 + XTB=1.5 CJE=29.0p VJE=1.10 MJE=0.500 CJC=14.7p VJC=0.300 + MJC=0.300 TF=362p TR=60.3n EG=1.12 ) *SRC=DMB2227A;DI_DMB2227A_PNP;BJTs PNP; Si; 60.0V 0.600A 360MHz - .MODEL DI_DMB2227A_PNP NPN (IS=6.60f NF=1.00 BF=151 VAF=139 + IKF=0.394 ISE=17.3f NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=0.600 RE=0.434 RB=1.74 RC=0.174 + XTB=1.5 CJE=31.0p VJE=1.10 MJE=0.500 CJC=14.8p VJC=0.300 + MJC=0.300 TF=416p TR=71.8n EG=1.12 ) *SRC=DMMT3904W;DI_DMMT3904W;BJTs NPN; Si; 40.0V 0.200A 347MHz Diodes *Inc. Matched Transistor .MODEL DI_DMMT3904W NPN (IS=20.3f NF=1.00 BF=274 VAF=114 + IKF=36.4m ISE=6.99p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=90.0m RE=0.657 RB=2.63 RC=0.263 + XTB=1.5 CJE=8.29p VJE=1.10 MJE=0.500 CJC=7.10p VJC=0.300 + MJC=0.300 TF=426p TR=71.3n EG=1.12 ) *SRC=DMMT3904W;DI_DMMT3904W;BJTs NPN; Si; 40.0V 0.200A 347MHz Diodes *Inc. Matched Transistor .MODEL DI_DMMT3904W NPN (IS=20.3f NF=1.00 BF=274 VAF=114 + IKF=36.4m ISE=6.99p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=90.0m RE=0.657 RB=2.63 RC=0.263 + XTB=1.5 CJE=8.29p VJE=1.10 MJE=0.500 CJC=7.10p VJC=0.300 + MJC=0.300 TF=426p TR=71.3n EG=1.12 ) ***************************************************************************************************************************************** *SRC=DMMT3906;DI_DMMT3906;BJTs PNP; Si; 40.0V 0.200A 257MHz Diodes Inc. Matched BJTs - Single device of dual .MODEL DI_DMMT3906 PNP (IS=20.3f NF=1.00 BF=437 VAF=114 + IKF=44.6m ISE=6.81p NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=0.120 RE=1.16 RB=4.63 RC=0.463 + XTB=1.5 CJE=23.5p VJE=1.10 MJE=0.500 CJC=10.7p VJC=0.300 + MJC=0.300 TF=504p TR=94.3n EG=1.12 ) ***************************************************************************************************************************************** ***************************************************************************************************************************************** *SRC=DMMT3906;DI_DMMT3906;BJTs PNP; Si; 40.0V 0.200A 257MHz Diodes Inc. Matched BJTs - Single device of dual .MODEL DI_DMMT3906 PNP (IS=20.3f NF=1.00 BF=437 VAF=114 + IKF=44.6m ISE=6.81p NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=0.120 RE=1.16 RB=4.63 RC=0.463 + XTB=1.5 CJE=23.5p VJE=1.10 MJE=0.500 CJC=10.7p VJC=0.300 + MJC=0.300 TF=504p TR=94.3n EG=1.12 ) ***************************************************************************************************************************************** *SRC=DMMT3906W;DI_DMMT3906W;BJTs PNP; Si; 40.0V 0.200A 257MHz Diodes, Inc. PNP .MODEL DI_DMMT3906W PNP (IS=20.3f NF=1.00 BF=274 VAF=114 + IKF=36.4m ISE=6.99p NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=90.0m RE=1.01 RB=4.03 RC=0.403 + XTB=1.5 CJE=12.1p VJE=1.10 MJE=0.500 CJC=10.7p VJC=0.300 + MJC=0.300 TF=531p TR=85.6n EG=1.12 ) *SRC=DMMT3906W;DI_DMMT3906W;BJTs PNP; Si; 40.0V 0.200A 257MHz Diodes, Inc. PNP .MODEL DI_DMMT3906W PNP (IS=20.3f NF=1.00 BF=274 VAF=114 + IKF=36.4m ISE=6.99p NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=90.0m RE=1.01 RB=4.03 RC=0.403 + XTB=1.5 CJE=12.1p VJE=1.10 MJE=0.500 CJC=10.7p VJC=0.300 + MJC=0.300 TF=531p TR=85.6n EG=1.12 ) *SRC=DNLS350E;DI_DNLS350E;BJTs NPN; Si; 50.0V 3.00A 220MHz .MODEL DI_DNLS350E NPN (IS=11.7f NF=1.00 BF=388 VAF=127 + IKF=2.97 ISE=8.95f NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=4.50 RE=23.8m RB=95.3m RC=9.53m + XTB=1.5 CJE=341p VJE=1.10 MJE=0.500 CJC=45.4p VJC=0.300 + MJC=0.300 TF=574p TR=111n EG=1.12 ) *SRC=DNLS350Y;DI_DNLS350Y;BJTs NPN; Si; 50.0V 3.00A 220MHz .MODEL DI_DNLS350Y NPN (IS=11.7f NF=1.00 BF=388 VAF=127 + IKF=2.97 ISE=8.95f NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=4.50 RE=23.8m RB=95.3m RC=9.53m + XTB=1.5 CJE=341p VJE=1.10 MJE=0.500 CJC=45.4p VJC=0.300 + MJC=0.300 TF=574p TR=111n EG=1.12 ) *DIODES_INC_SPICE_MODEL *SIMULATOR=SIMETRIX *ORIGIN=DZSL_DPG *DATE=18Apr2014 *VERSION=1.1 .MODEL DP0150BLP4 PNP IS=3E-15 NF=1 BF=145 ISE=2E-15 NE=1.45 + BR=4 ISC=15E-15 NC=1.05 NR=1 CJC=5.45E-12 MJC=0.33 VJC=0.59 + CJE=7.53E-12 MJE=0.36 VJE=0.73 RC=.2 RE=200m VAF=5 IKF=135m XTB=1 NK=.7 .SIMULATOR DEFAULT * (c) 2014 Diodes Inc * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL * .SIMULATOR DEFAULT *SRC=DPLS350E;DI_DPLS350E;BJTs PNP; Si; 50.0V 3.00A 200MHz .MODEL DI_DPLS350E PNP (IS=9.40f NF=1.00 BF=382 VAF=127 + IKF=2.48 ISE=8.14f NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=3.75 RE=25.8m RB=0.103 RC=10.3m + XTB=1.5 CJE=337p VJE=1.10 MJE=0.500 CJC=76.7p VJC=0.300 + MJC=0.300 TF=645p TR=122n EG=1.12 ) *SRC=DPLS350Y;DI_DPLS350Y;BJTs PNP; Si; 50.0V 3.00A 200MHz .MODEL DI_DPLS350Y PNP (IS=9.40f NF=1.00 BF=382 VAF=127 + IKF=2.48 ISE=8.14f NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=3.75 RE=25.8m RB=0.103 RC=10.3m + XTB=1.5 CJE=337p VJE=1.10 MJE=0.500 CJC=76.7p VJC=0.300 + MJC=0.300 TF=645p TR=122n EG=1.12 ) *DIODES_INC_SPICE_MODEL DSS2540M *SIMULATOR=SIMETRIX *ORIGIN=DZSL_DPG_SU *DATE=02Apr2012 *VERSION=1 .MODEL DSS2540M NPN(IS=6E-14 BF=500 NF=.98 ISE=1E-14 NE=1.25 ISC=3.3E-14 BR=15 NR=1 NC=1.12 CJE=36.592p VJE=.75 MJE=.37 CJC=9.674p VJC=.5 MJC=.33 VAF=28 IKF=1 RC=.1 RE=.05 NK=.808) * (c) 2011 Diodes Inc * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL * * *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG_GM *SIMULATOR=PSPICE *DATE=13OCT2010 *VERSION=1 * .MODEL DSS30101L NPN IS=6.8E-13 BF=700 NF=1.005 VAF=100 IKF=2.8 + ISE=6E-14 NE=1.4 BR=42 NR=1 VAR=14 IKR=1 ISC=4.8E-13 NC=1.44 + RE=0.02 RB=1 RC=0.032 CJE=141E-12 VJE=0.84 MJE=0.4 CJC=31E-12 + VJC=0.55 MJC=0.4 TF=0.59E-9 TR=6E-9 RCO=1.7 GAMMA=3E-8 + QUASIMOD=1 XTB=1.35 TRE1=0.0045 TRB1=0.0035 TRC1=0.0045 * *$ *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG_SU *SIMULATOR=PSPICE *DATE=14/11/2013 *VERSION=1 .MODEL DSS3540M PNP IS=20e-14 NF=1 ISE=5e-15 NE=1.3 BF=350 + VAF=26 IKF=1 ISC=9e-15 NC=1.03 BR=15 NR=1 VAR=5.7 IKR=0.6 RE=0.067 + RB=0.33 RC=0.012 CJE=36.99e-12 VJE=0.75 MJE=0.41 CJC=13.96e-12 VJC=0.5 + MJC=0.33 TF=4.5e-10 TR=5.6e-9 QUASIMOD=1 RCO=0.66 GAMMA=1.3e-9 NK=.71 + XTB=1.5 TRE1=0.004 TRB1=0.003 TRC1=0.004 * (c) 2013 Diodes Inc * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL * *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG_SU *SIMULATOR=PSPICE *DATE=14/11/2013 *VERSION=1 .MODEL DSS3540M PNP IS=20e-14 NF=1 ISE=5e-15 NE=1.3 BF=350 + VAF=26 IKF=1 ISC=9e-15 NC=1.03 BR=15 NR=1 VAR=5.7 IKR=0.6 RE=0.067 + RB=0.33 RC=0.012 CJE=36.99e-12 VJE=0.75 MJE=0.41 CJC=13.96e-12 VJC=0.5 + MJC=0.33 TF=4.5e-10 TR=5.6e-9 QUASIMOD=1 RCO=0.66 GAMMA=1.3e-9 NK=.71 + XTB=1.5 TRE1=0.004 TRB1=0.003 TRC1=0.004 * (c) 2013 Diodes Inc * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL * * *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG_GM *SIMULATOR=PSPICE *DATE=13OCT2010 *VERSION=2 * .MODEL DSS4140U NPN IS=6.8E-13 BF=700 NF=1.005 VAF=100 IKF=2.8 + ISE=6E-14 NE=1.4 BR=42 NR=1 VAR=14 IKR=1 ISC=4.8E-13 NC=1.44 + RE=0.02 RB=1 RC=0.032 CJE=141E-12 VJE=0.84 MJE=0.4 CJC=31E-12 + VJC=0.55 MJC=0.4 TF=0.59E-9 TR=6E-9 RCO=1.7 GAMMA=3E-8 + QUASIMOD=1 XTB=1.35 TRE1=0.0045 TRB1=0.0035 TRC1=0.0045 * *$ * *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG_GM *SIMULATOR=PSPICE *DATE=13OCT2010 *VERSION=2 * .MODEL DSS4140V NPN IS=6.8E-13 BF=700 NF=1.005 VAF=100 IKF=2.8 + ISE=6E-14 NE=1.4 BR=42 NR=1 VAR=14 IKR=1 ISC=4.8E-13 NC=1.44 + RE=0.02 RB=1 RC=0.032 CJE=141E-12 VJE=0.84 MJE=0.4 CJC=31E-12 + VJC=0.55 MJC=0.4 TF=0.59E-9 TR=6E-9 RCO=1.7 GAMMA=3E-8 + QUASIMOD=1 XTB=1.35 TRE1=0.0045 TRB1=0.0035 TRC1=0.0045 * *$ * *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG_GM *SIMULATOR=PSPICE *DATE=13OCT2010 *VERSION=2 * .MODEL DSS4240V NPN IS=6.8E-13 BF=700 NF=1.005 VAF=100 IKF=2.8 + ISE=6E-14 NE=1.4 BR=42 NR=1 VAR=14 IKR=1 ISC=4.8E-13 NC=1.44 + RE=0.02 RB=1 RC=0.032 CJE=141E-12 VJE=0.84 MJE=0.4 CJC=31E-12 + VJC=0.55 MJC=0.4 TF=0.59E-9 TR=6E-9 RCO=1.7 GAMMA=3E-8 + QUASIMOD=1 XTB=1.35 TRE1=0.0045 TRB1=0.0035 TRC1=0.0045 * *$ * *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG *SIMULATOR=PSPICE *DATE=06/01/09 *VERSION=1 * .MODEL DSS4540X NPN IS=1.35E-12 NF=1.0 BF=600 IKF=5.0 VAF=120 + ISE=0.6E-13 NE=1.25 NR=1.0 BR=150 IKR=3 VAR=15 + ISC=1.0E-10 NC=1.7 RB=0.1 RE=0.023 RC=0.010 + CJC=90.36E-12 CJE=547.5E-12 MJC=0.385 MJE=0.357 + VJC=0.5 VJE=0.741 TF=600E-12 TR=8E-9 * *$ * *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG *SIMULATOR=PSPICE *DATE=21/04/2009 *VERSION=1 * .MODEL DSS5140U PNP IS=3e-13 NF=1 ISE=8e-14 NE=1.47 BF=430 + VAF=27 IKF=2.35 ISC=1e-13 NC=1.25 BR=29 VAR=9.3 IKR=0.5 RE=55e-3 + RB=500e-3 RC=12e-3 CJE=158e-12 VJE=1.0 MJE=0.55 CJC=51e-12 + VJC=0.7 MJC=0.45 TF=6e-10 TR=13.6e-9 XTB=1.6 QUASIMOD=1 + RCO=0.85 GAMMA=6e-10 * *$ * *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG *SIMULATOR=PSPICE *DATE=21/04/2009 *VERSION=1 * .MODEL DSS5140V PNP IS=3e-13 NF=1 ISE=8e-14 NE=1.47 BF=430 + VAF=27 IKF=2.35 ISC=1e-13 NC=1.25 BR=29 VAR=9.3 IKR=0.5 RE=55e-3 + RB=500e-3 RC=12e-3 CJE=158e-12 VJE=1.0 MJE=0.55 CJC=51e-12 + VJC=0.7 MJC=0.45 TF=6e-10 TR=13.6e-9 XTB=1.6 QUASIMOD=1 + RCO=0.85 GAMMA=6e-10 * *$ *DIODES_INC_DSS5540X_SPICE_MODEL *DATE=23Jan2023 *VERSION=1.0 *ORIGIN=DT *SIMULATOR=SIMETRIX * .MODEL DSS5540X PNP (IS=3.003p NF=1.00 BF=433 VAF=114 + IKF=12.74 ISE=0.3p NE=2.00 BR=47.00 NR=1.00 NK=0.9 ISC=21p NC=1.9 + VAR=24.0 IKR=7.50 RE=17.4m RB=61.5m RC=6.15m RCO=0.002 + XTB=1.5 CJE=543p VJE=1.10 MJE=0.500 CJC=139p VJC=0.300 + MJC=0.300 TF=5.42n TR=11.1n EG=1.12 + TRE1=0.001 TRB1=0.003 TRC1=0.001 GAMMA=1n ) * *$ * ****************************************************************************** * (c) 2023 Diodes Inc * * Diodes Incorporated and its affiliated companies and subsidiaries * (collectively, "Diodes") provide these spice models and data * (collectively, the "SM data") "as is" and without any representations * or warranties, express or implied, including any warranty of * merchantability or fitness for a particular purpose, any warranty * arising from course of dealing or course of performance, or any * warranty that access to or operation of the SM data will be * uninterrupted, or that the SM data or any simulation using the SM data * will be error free. * * To the maximum extent permitted by law, in no event will Diodes be * liable for any indirect, special, incidental, punitive or consequential * damages arising out of or in connection with the production or use of * SM data, however caused and under whatever cause of action or theory of * liability brought (including, without limitation, under any contract, * negligence or other tort theory of liability), even if Diodes has been * advised of the possibility of such damages, and Diodes' total liability * (whether in contract, tort or otherwise) with regard to the SM data * will not, in the aggregate, exceed any sums paid by you to Diodes for * the SM data * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL ****************************************************************************** *DIODES_INC_SPICE_MODEL DST3904DJ *SIMULATOR=SIMETRIX *ORIGIN=DZSL_DPG_SU *DATE=28Feb2011 *VERSION=1 .MODEL DST3904DJ NPN (IS=4.5E-15 NF=1 ISE=2E-15 NE=1.4 BF=170 ISC=30E-15 NC=.995 BR=1.2 NR=1.24 CJE=8.5p VJE=.7 MJE=.345 CJC=2.9p MJC=.23 VJC=.4 RE=.1 RB=5 RC=.1 VAR=2.4 IKR=0.300 VAF=180 IKF=0.121 TF=1n TR=250u) * (c) 2011 Diodes Inc * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL * *DIODES_INC_SPICE_MODEL DST3906DJ *SIMULATOR=SIMETRIX *ORIGIN=DZSL_DPG_SU *DATE=31Aug2012 *VERSION=1.1 .MODEL DST3906DJ PNP (IS=6E-15 BF=150 NE=1.45 NF=1 ISE=2E-15 ISC=2E-15 NR=1 BR=5 NC=1.025 CJC=6.49E-12 MJC=0.32 VJC=0.5 CJE=8.819E-12 MJE=0.35 VJE=0.7 RE=.8 RC=.6 IKF=170m NK=.70 VAF=12 XTB=1.5 QUASIMOD=1 RCO=1 EG=1.15) * (c) 2012 Diodes Inc * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL * *DIODES_INC_SPICE_MODEL DST3946DPJ *SIMULATOR=SIMETRIX *ORIGIN=DZSL_DPG_SU *DATE=31Aug2012 *VERSION=1.1 .SUBCKT DST3946DPJ 1 2 3 4 5 6 Q1 6 2 1 DST3904DJ Q2 3 5 4 DST3906DJ .MODEL DST3904DJ NPN (IS=4.5E-15 NF=1 ISE=2E-15 NE=1.4 BF=170 ISC=30E-15 NC=.995 BR=1.2 NR=1.24 CJE=8.5p VJE=.7 MJE=.345 CJC=2.9p MJC=.23 VJC=.4 RE=.1 RB=5 RC=.1 VAR=2.4 IKR=0.300 VAF=180 IKF=0.121 TF=1n TR=250u) .MODEL DST3906DJ PNP (IS=6E-15 BF=150 NE=1.45 NF=1 ISE=2E-15 ISC=2E-15 NR=1 BR=5 NC=1.025 CJC=6.49E-12 MJC=0.32 VJC=0.5 CJE=8.819E-12 MJE=0.35 VJE=0.7 RE=.8 RC=.6 IKF=170m NK=.70 VAF=12 XTB=1.5 QUASIMOD=1 RCO=1 EG=1.15) .ENDS * (c) 2012 Diodes Inc * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL * *DIODES_INC_SPICE_MODEL DST847BDJ *SIMULATOR=SIMETRIX *ORIGIN=DZSL_DPG_SU *DATE=15Mar2011 *VERSION=1 .MODEL DST847BDJ NPN (IS=6E-15 NF=.99 BF=350 ISE=400E-18 NE=1.15 BR=1.8 NR=.97 NC=1.1 ISC=10E-15 + RE=0.15 RB=4 RC=0.2 CJE=9p VJE=.7 MJE=0.3 CJC=3.146p VJC=0.500 MJC=0.2200 VAF=40 IKF=48m VAR=24.0 IKR=90.0m) * (c) 2011 Diodes Inc * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL * *DIODES_INC_SPICE_MODEL DST847BPDP6 *SIMULATOR=SIMETRIX *ORIGIN=DZSL_DPG_SU *DATE=17Aug2012 *VERSION=1.1 .SUBCKT DST847BPDP6 1 2 3 4 5 6 Q1 6 2 1 DST847BDJ Q2 3 5 4 DST857BDJ .MODEL DST847BDJ NPN (IS=6E-15 NF=.99 BF=350 ISE=400E-18 NE=1.15 BR=1.8 NR=.97 NC=1.1 ISC=10E-15 RE=0.15 RB=4 RC=0.2 CJE=9p VJE=.7 MJE=0.3 CJC=3.146p VJC=0.500 MJC=0.2200 VAF=40 IKF=48m VAR=24.0 IKR=90.0m) .MODEL DST857BDJ PNP (IS=10E-15 NF=1 BF=180 ISE=2E-15 NE=1.45 BR=4 ISC=3E-15 NC=1.05 NR=1 CJC=5.45E-12 MJC=0.33 VJC=0.59 CJE=7.53E-12 MJE=0.36 VJE=0.73 RC=.2 RE=200m VAF=5 IKF=70m XTB=1.3 NK=.7) .ENDS * (c) 2012 Diodes Inc * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL * *DIODES_INC_SPICE_MODEL DST857BDJ *SIMULATOR=SIMETRIX *ORIGIN=DZSL_DPG_SU *DATE=17Aug2012 *VERSION=1.2 .MODEL DST857BDJ PNP (IS=10E-15 NF=1 BF=180 ISE=2E-15 NE=1.45 BR=4 ISC=3E-15 NC=1.05 NR=1 CJC=5.45E-12 MJC=0.33 VJC=0.59 CJE=7.53E-12 MJE=0.36 VJE=0.73 RC=.2 RE=200m VAF=5 IKF=70m XTB=1.3 NK=.7) * (c) 2012 Diodes Inc * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL * *SRC=DXT2222A;DI_DXT2222A;BJTs NPN; Si; 40.0V 0.600A 410MHz - .MODEL DI_DXT2222A NPN (IS=9.69f NF=1.00 BF=272 VAF=114 + IKF=0.493 ISE=11.7f NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.750 RE=0.253 RB=1.01 RC=0.101 + XTB=1.5 CJE=29.0p VJE=1.10 MJE=0.500 CJC=14.7p VJC=0.300 + MJC=0.300 TF=362p TR=60.3n EG=1.12 ) *SRC=DXT3904;DI_DXT3904;BJTs NPN; Si; 40.0V 0.200A 420MHz - .MODEL DI_DXT3904 NPN (IS=3.52e-016 NF=1.00 BF=233 VAF=114 + IKF=39.0m ISE=2.61f NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=60.0m RE=0.655 RB=2.62 RC=0.262 + XTB=1.5 CJE=6.25p VJE=1.10 MJE=0.500 CJC=4.78p VJC=0.300 + MJC=0.300 TF=368p TR=59.4n EG=1.12 ) *SRC=DXT3906;DI_DXT3906;BJTs PNP; Si; 40.0V 0.200A 510MHz - .MODEL DI_DXT3906 PNP (IS=2.87e-016 NF=1.00 BF=160 VAF=114 + IKF=88.5m ISE=120f NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=0.150 RE=0.705 RB=2.82 RC=0.282 + XTB=1.5 CJE=8.98p VJE=1.10 MJE=0.500 CJC=6.15p VJC=0.300 + MJC=0.300 TF=293p TR=50.4n EG=1.12 ) * *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG_IM *SIMULATOR=PSPICE *DATE=21Oct2013 *VERSION=1 * .MODEL DXT690BP5 NPN IS=1.5E-12 NF=1 BF=1000 IKF=3 VAF=60 ISE=4E-13 NE=1.37 +NR=1 BR=123 IKR=1 VAR=14.5 ISC=4E-13 NC=1.34 RB=0.1 RE=0.045 RC=0.027 +CJE=250E-12 VJE=0.68 MJE=0.36 CJC=59E-12 VJC=0.49 MJC=0.36 TF=0.77E-9 +TR=18E-9 RCO=0.93 GAMMA=5E-9 QUASIMOD=1 XTB=1.4 TRE1=0.002 TRB1=0.002 +TRC1=0.002 * * (c) 2013 Diodes Inc * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL * * *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG_IM *SIMULATOR=PSPICE *DATE=21Oct2013 *VERSION=1 * .MODEL DXT690BP5 NPN IS=1.5E-12 NF=1 BF=1000 IKF=3 VAF=60 ISE=4E-13 NE=1.37 +NR=1 BR=123 IKR=1 VAR=14.5 ISC=4E-13 NC=1.34 RB=0.1 RE=0.045 RC=0.027 +CJE=250E-12 VJE=0.68 MJE=0.36 CJC=59E-12 VJC=0.49 MJC=0.36 TF=0.77E-9 +TR=18E-9 RCO=0.93 GAMMA=5E-9 QUASIMOD=1 XTB=1.4 TRE1=0.002 TRB1=0.002 +TRC1=0.002 * * (c) 2013 Diodes Inc * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL * *DIODES_INC_SPICE_MODEL DXT790AP5 *SIMULATOR=SIMETRIX *ORIGIN=DZSL_DPG_IM *DATE=25Oct2012 *VERSION=1 .MODEL DXT790AP5 PNP IS=1.09684E-12 NF=1.0102 BF=650 IKF=1.7 NK=0.75 +VAF=23.5 ISE=9.88593E-14 NE=1.47256 NR=1.00391 BR=270 IKR=0.2 VAR=30 +ISC=5.4933E-14 NC=1.07427 RB=0.055 RE=0.049 RC=0.078 CJC=96E-12 +MJC=0.495 VJC=0.67 CJE=275E-12 TF=0.75E-9 TR=10.8E-9 XTB=1.4 +TRE1=.0025 TRB1=.0025 TRC1=.0025 * (c) 2012 Diodes Inc * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL * *DXTN07045DFG Spice Model v1.0 Last revision 13/07/07 * .MODEL DXTN07045DFG NPN IS=1.5E-12 NF=1 BF=1160 IKF=4 VAF=60 ISE=4E-13 NE=1.37 +NR=1 BR=123 IKR=1 VAR=14.5 ISC=4E-13 NC=1.34 RB=0.1 RE=0.022 RC=0.015 +CJE=250E-12 VJE=0.68 MJE=0.36 CJC=59E-12 VJC=0.49 MJC=0.36 TF=0.6E-9 +TR=9E-9 RCO=0.75 GAMMA=5E-9 QUASIMOD=1 XTB=1.4 TRE1=0.004 TRB1=0.004 +TRC1=0.004 * *$ * *SRC=DZT2222A;DI_DZT2222A;BJTs NPN; Si; 40.0V 0.600A 410MHz - .MODEL DI_DZT2222A NPN (IS=9.69f NF=1.00 BF=272 VAF=114 + IKF=0.493 ISE=11.7f NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.750 RE=0.253 RB=1.01 RC=0.101 + XTB=1.5 CJE=29.0p VJE=1.10 MJE=0.500 CJC=14.7p VJC=0.300 + MJC=0.300 TF=362p TR=60.3n EG=1.12 ) *ZETEX FCX1051A Spice Model v1.0 Last Revised 3/1/03 * .MODEL FCX1051A NPN IS=1.35E-12 NF=1.0 BF=600 IKF=5.0 VAF=120 + ISE=0.6E-13 NE=1.25 NR=1.0 BR=150 IKR=3 VAR=15 + ISC=1.0E-10 NC=1.7 RB=0.1 RE=0.023 RC=0.010 + CJC=90.36E-12 CJE=547.5E-12 MJC=0.385 MJE=0.357 + VJC=0.5 VJE=0.741 TF=600E-12 TR=8E-9 * *$ * *ZETEX FCX1151A Spice Model v1.0 Last Revised 3/1/03 * .MODEL FCX1151A PNP IS=1.7e-12 NF=1.004 ISE=1.02e-13 NE=1.55 BF=562 + VAF=26.01 IKF=3.5 NR=.97 ISC=1.5e-13 NC=1.3 BR=38 + VAR=2.41 IKR=0.3 RE=25.37e-3 RB=250e-3 RC=25e-3 + CJE=440e-12 CJC=160e-12 VJC=1.058 MJC=0.5678 + TF=0.8e-9 TR=55.5e-9 * *$ * *ZETEX FCX491 Spice Model v1.0 Last Revised 8/8/05 * .MODEL FCX491 NPN IS=3.05E-13 NF=1.0034 BF=200 IKF=0.8 VAF=165 +ISE=8.0191E-14 NE=1.4126 NR=1.001 BR=50 IKR=0.6 VAR=69 +ISC=1.6E-12 NC=1.38 RB=0.065 RE=0.109 RC=0.075 +CJC=17.2E-12 MJC=0.3429 VJC=0.4298 CJE=96E-12 +TF=0.71E-9 TR=2.5E-9 * *$ * *ZETEX FCX491 Spice Model v1.0 Last Revised 8/8/05 * .MODEL FCX491 NPN IS=3.05E-13 NF=1.0034 BF=200 IKF=0.8 VAF=165 +ISE=8.0191E-14 NE=1.4126 NR=1.001 BR=50 IKR=0.6 VAR=69 +ISC=1.6E-12 NC=1.38 RB=0.065 RE=0.109 RC=0.075 +CJC=17.2E-12 MJC=0.3429 VJC=0.4298 CJE=96E-12 +TF=0.71E-9 TR=2.5E-9 * *$ * *ZETEX FCX589 Spice Model v1.0 Last Revised 26/01/05 * .MODEL FCX589 PNP IS =1.3E-13 BF =200 IKF=1.8 VAF=104 +ISE=6E-14 NE =1.45 BR =50 IKR=0.2 VAR=8 +ISC=3.5E-14 NC =1.23 RB =0.7 RE =0.063 RC =0.122 +CJC=55E-12 MJC=0.3541 VJC=0.1928 CJE=120.9E-12 +MJE=.4685 VJE=1.041 TF =0.51E-9 TR =3.6E-9 * *$ * *ZETEX FCX591 Spice Model v1.0 Last Revised 8/8/05 * .MODEL FCX591 PNP IS =3.2E-14 BF =170 VAF=45 NF =0.977 IKF=1.25 ISE=7E-15 +NE =1.35 BR =50 VAR=50 NR =.986 IKR=0.15 ISC=0.9E-14 NC =1.08 RB =0.16 +RE =0.195 RC =0.185 CJE=104E-12 TF =0.7E-9 CJC=30.5E-12 TR =3E-9 VJC=0.395 +MJC=0.415 * *$ * *ZETEX FCX591 Spice Model v1.0 Last Revised 8/8/05 * .MODEL FCX591 PNP IS =3.2E-14 BF =170 VAF=45 NF =0.977 IKF=1.25 ISE=7E-15 +NE =1.35 BR =50 VAR=50 NR =.986 IKR=0.15 ISC=0.9E-14 NC =1.08 RB =0.16 +RE =0.195 RC =0.185 CJE=104E-12 TF =0.7E-9 CJC=30.5E-12 TR =3E-9 VJC=0.395 +MJC=0.415 * *$ * *ZETEX FCX619 Spice Model v1.0 Last Revised 25/11/02 * .MODEL FCX619 NPN IS =5.8032E-13 NF =1.0027 BF =485 IKF=2.2 VAF=84 + ISE=1.5933E-13 NE =1.4148 NR =1.0006 BR =110 IKR=1.4 + VAR=51 ISC=5E-12 NC =1.45 RB =0.042 RE =0.033 + RC =0.0375 CJC=40E-12 MJC=0.3708 VJC=0.4347 CJE=217E-12 + TF =0.78E-9 TR =9E-9 * *$ * *ZETEX FCX619 Spice Model v1.0 Last Revised 25/11/02 * .MODEL FCX619 NPN IS =5.8032E-13 NF =1.0027 BF =485 IKF=2.2 VAF=84 + ISE=1.5933E-13 NE =1.4148 NR =1.0006 BR =110 IKR=1.4 + VAR=51 ISC=5E-12 NC =1.45 RB =0.042 RE =0.033 + RC =0.0375 CJC=40E-12 MJC=0.3708 VJC=0.4347 CJE=217E-12 + TF =0.78E-9 TR =9E-9 * *$ * *ZETEX FCX690B Spice Model v2.0 Last revision 12/07/07 * .MODEL FCX690B NPN IS=1.5E-12 NF=1 BF=1000 IKF=3 VAF=60 ISE=4E-13 NE=1.37 +NR=1 BR=123 IKR=1 VAR=14.5 ISC=4E-13 NC=1.34 RB=0.1 RE=0.045 RC=0.027 +CJE=250E-12 VJE=0.68 MJE=0.36 CJC=59E-12 VJC=0.49 MJC=0.36 TF=0.77E-9 +TR=18E-9 RCO=0.93 GAMMA=5E-9 QUASIMOD=1 XTB=1.4 TRE1=0.002 TRB1=0.002 +TRC1=0.002 * *$ * *ZETEX FCX790A Spice Model v2.0 Last Revised 1/5/03 * .MODEL FCX790A PNP IS=1.09684E-12 NF=1.0102 BF=650 IKF=1.7 NK=0.75 +VAF=23.5 ISE=9.88593E-14 NE=1.47256 NR=1.00391 BR=270 IKR=0.2 VAR=30 +ISC=5.4933E-14 NC=1.07427 RB=0.055 RE=0.049 RC=0.078 CJC=96E-12 +MJC=0.495 VJC=0.67 CJE=275E-12 TF=0.75E-9 TR=10.8E-9 XTB=1.4 +TRE1=.0025 TRB1=.0025 TRC1=.0025 * *$ * *ZETEX FMMT449 Spice Model v1.0 Last Revised 11/11/04 * .MODEL FMMT449 NPN IS =1.04E-13 BF =195 IKF =1.9 VAF =160 + ISE=1.83E-14 NE =1.35 NR =1.00 BR =140 IKR=0.5 + VAR=30 ISC=6.00E-12 NC =1.5 RB =0.3 RE =0.065 + RC =0.11 CJC=25.37E-12 MJC=0.3281 VJC=0.464 + CJE=122E-12 MJE=0.3412 VJE=0.7631 TF =0.86E-9 + TR =12.5E-9 * *$ * *ZETEX FMMT489 Spice Model v1.0 Last Revised 13/10/93 * .MODEL FMMT489 NPN IS =1.04E-13 BF =195 IKF =1.9 VAF =160 + ISE=1.83E-14 NE =1.35 NR =1.00 BR =140 IKR=0.5 + VAR=30 ISC=6.00E-12 NC =1.5 RB =0.3 RE =0.065 + RC =0.11 CJC=25.37E-12 MJC=0.3281 VJC=0.464 + CJE=122E-12 MJE=0.3412 VJE=0.7631 TF =0.86E-9 + TR =12.5E-9 * *$ * *TITLE=FMMT491A *DATE=April_2019 *ORIGIN=SH, updated from FMMT491 *SIMULATOR=DIODES, SIMETRIX *VERSION=1 .MODEL FMMT491A NPN + IS=3.05E-13 NF=1.0034 BF=800 IKF=4 VAF=165 NKF=0.9 + ISE=8.0191E-14 NE=1.4126 NR=1.001 BR=120 IKR=0.6 VAR=69 + ISC=1.6E-12 NC=1.38 RB=0.065 RE=0.109 RC=0.075 + CJC=17.2E-12 MJC=0.3429 VJC=0.4298 CJE=96E-12 + TF=0.71E-9 TR=2.5E-9 * *$ * * (c) 2013 Diodes Inc * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL *ZETEX FMMT491 Spice Model v1.0 Last Revised 8/8/05 * .MODEL FMMT491 NPN IS=3.05E-13 NF=1.0034 BF=200 IKF=0.8 VAF=165 +ISE=8.0191E-14 NE=1.4126 NR=1.001 BR=50 IKR=0.6 VAR=69 +ISC=1.6E-12 NC=1.38 RB=0.065 RE=0.109 RC=0.075 +CJC=17.2E-12 MJC=0.3429 VJC=0.4298 CJE=96E-12 +TF=0.71E-9 TR=2.5E-9 * *$ * *TITLE=FMMT491A *DATE=April_2019 *ORIGIN=SH, updated from FMMT491 *SIMULATOR=DIODES, SIMETRIX *VERSION=1 .MODEL FMMT491A NPN + IS=3.05E-13 NF=1.0034 BF=800 IKF=4 VAF=165 NKF=0.9 + ISE=8.0191E-14 NE=1.4126 NR=1.001 BR=120 IKR=0.6 VAR=69 + ISC=1.6E-12 NC=1.38 RB=0.065 RE=0.109 RC=0.075 + CJC=17.2E-12 MJC=0.3429 VJC=0.4298 CJE=96E-12 + TF=0.71E-9 TR=2.5E-9 * *$ * * (c) 2013 Diodes Inc * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL *ZETEX FMMT549 Spice Model v1.0 Last Revised 11/10/94 * .MODEL FMMT549 PNP IS =1.3E-13 BF =200 IKF=1.8 VAF=104 + ISE=6E-14 NE =1.45 BR =50 IKR=0.2 VAR=8 + ISC=3.5E-14 NC =1.23 RB =0.7 RE =0.063 RC =0.122 + CJC=55E-12 MJC=0.3541 VJC=0.1928 CJE=120.9E-12 + MJE=.4685 VJE=1.041 TF =0.51E-9 TR =3.6E-9 * *$ * *ZETEX FMMT589 Spice Model v1.0 Last Revised 11/10/94 * .MODEL FMMT589 PNP IS =1.3E-13 BF =200 IKF=1.8 VAF=104 + ISE=6E-14 NE =1.45 BR =50 IKR=0.2 VAR=8 + ISC=3.5E-14 NC =1.23 RB =0.7 RE =0.063 RC =0.122 + CJC=55E-12 MJC=0.3541 VJC=0.1928 CJE=120.9E-12 + MJE=.4685 VJE=1.041 TF =0.51E-9 TR =3.6E-9 * *$ * *ZETEX FMMT591 Spice Model v1.0 Last Revised 8/8/05 * .MODEL FMMT591 PNP IS =3.2E-14 BF =170 VAF=45 NF =0.977 IKF=1.25 ISE=7E-15 +NE =1.35 BR =50 VAR=50 NR =.986 IKR=0.15 ISC=0.9E-14 NC =1.08 RB =0.16 +RE =0.195 RC =0.185 CJE=104E-12 TF =0.7E-9 CJC=30.5E-12 TR =3E-9 VJC=0.395 +MJC=0.415 * *$ * *ZETEX FMMT591 Spice Model v1.0 Last Revised 8/8/05 * .MODEL FMMT591 PNP IS =3.2E-14 BF =170 VAF=45 NF =0.977 IKF=1.25 ISE=7E-15 +NE =1.35 BR =50 VAR=50 NR =.986 IKR=0.15 ISC=0.9E-14 NC =1.08 RB =0.16 +RE =0.195 RC =0.185 CJE=104E-12 TF =0.7E-9 CJC=30.5E-12 TR =3E-9 VJC=0.395 +MJC=0.415 * *$ * *FMMT619 Spice model *SIMULATOR=SIMETRIX *ORIGIN=PH *DATE=09April2019 *VERSION=2 *#SIMETRIX .Model FMMT619 NPN ; ## Description ## ## Effect ## ; ## DC Forward Parameters ## + IS = 5.8032E-13 ; transport saturation current Controls Icbo and where hFE falls with high Ic + NF = 1.02 ; forward current emission coefficient + ISE = 1.5933E-13 ; base-emitter leakage saturation current Controls the fall in hFE that occurs at low Ic + NE = 1.4148 ; base-emitter leakage emission coefficient Controls Icbo and where hFE falls with high Ic. Controls the fall in hFE that occurs at low Ic + BF = 465 ; ideal maximum forward beta Controls peak forward hFE + IKF = 8 ; corner for forward-beta high-current roll-off Current where rollof occurs + NK = 0.8 ; high-current roll-off coefficient Slope of roll off + VAF = 84 ; forward Early voltage controls the variation of collector current with voltage when the transistor is operated in its linear region. ; ## DC Reverse Parameters ## + NR = 1.0006 ; reverse current emission coefficient + ISC = 5E-12 ; base-collector leakage saturation current Controls the fall of reverse hFE at low currents + NC = 1.6 ; base-collector leakage emission coefficient Controls the fall of reverse hFE at low currents + BR = 110 ; ideal maximum reverse beta Controls peak reverse hFE + IKR = 1.4 ; corner for reverse-beta high-current roll-off Current where rollof occurs + VAR = 51 ; reverse Early voltage the reverse version of VAF. ; ## DC Rb Parameters ## + RB = 14.5 ; zero-bias (maximum) base resistance + IRB = 8.00E-06 ; current at which Rb falls halfway to RBM + RBM = 0.2 ; minimum base resistance ; ## DC Re Parameters ## + RE = 0.05 ; emitter ohmic resistance ; ## DC Rc Parameters ## + RC = 0.0375 ; collector ohmic resistance ; ## AC base-emitter Parameters ## + CJE= 2.17E-10 ; base-emitter zero-bias p-n capacitance controls Cbe. + VJE = 0.75 ; base-emitter built-in potential + MJE = 0.33 ; base-emitter p-n grading factor ; ## AC base-collector Parameters ## + CJC = 4E-11 ; base-collector zero-bias p-n capacitance control Ccb and how it varies with Vcb. + VJC = 0.4347 ; base-collector built-in potential control Ccb and how it varies with Vcb. + MJC = 0.3708 ; base-collector p-n grading factor control Ccb and how it varies with Vcb. + XCJC = 1 ; fraction of CJC connected internally to Rb ; ## AC substrate Parameters ## + CJS = 0 ; substrate zero-bias p-n capacitance + VJS = 0.75 ; substrate p-n built-in potential + MJS = 0 ; substrate p-n grading factor ; ## AC Transit Time Parameters ## + TF = 780.0E-12 ; ideal forward transit time controls Ft and switching speeds. + XTF = 0 ; transit time bias dependence coefficient + VTF = 1E+20 ; transit time dependency on Vbc + ITF = 0 ; transit time dependency on Ic + PTF = 0 ; excess phase @ 1/(2p·TF)Hz + TR = 9.00E-09 ; ideal reverse transit time controls switching storage times. ; ##Temperature Parameters ## + XTB = 1.3 ; forward and reverse beta temperature coefficient controls temperature effects on hFE. Try 1.6 for NPN, 1.9 for PNP + XTI = 3 ; IS temperature effect exponent controls temperature effects on saturation current + RCO = 0 ; epitaxial region resistance + TRB1 = 0 ; RB temperature coefficient (linear) + TRB2 = 0 ; RB temperature coefficient (quadratic) + TRC1 = 0 ; RC temperature coefficient (linear) + TRC2 = 0 ; RC temperature coefficient (quadratic) + TRE1 = 0 ; RE temperature coefficient (linear) + TRE2 = 0 ; RE temperature coefficient (quadratic) + TRM1 = 0 ; RBM temperature coefficient (linear) + TRM2 = 0 ; RBM temperature coefficient (quadratic) * T_ABS = ; absolute temperature + T_MEASURED = 27 ; measured temperature * T_REL_GLOBAL = ; relative to current temperature + QUASIMOD = 1 ; quasi-saturation model flag for temperature dependence 1= Gamma, RCO, VO temp dependance 0n. 0=off. + CN = 2.42 ; quasi-saturation temperature coefficient for hole mobility defaults NPN 2.42, PNP 2.20 + D = 0.87 ; quasi-saturation temperature coefficient -hole carrier velocity defaults NPN 0.87, PNP 0.52 + FC = 0.5 ; forward-bias depletion capacitor coefficient + EG = 1.11 ; bandgap voltage (barrier height) + GAMMA = 1E-11 ; epitaxial region doping factor + ISS = 0 ; substrate p-n saturation current + NS = 1 ; substrate p-n emission coefficient + QCO = 0 ; epitaxial region charge factor ; ## Flicker Parameters ## + AF = 1 ; flicker noise exponent + KF = 0 ; flicker noise coefficient 0.0 + VG = 1.206 ; quasi-saturation extrapolated bandgap voltage at 0° K + VO = 10 ; carrier mobility knee voltage * (c) 2019 Diodes Inc * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL *FMMT619 Spice model *SIMULATOR=SIMETRIX *ORIGIN=PH *DATE=09April2019 *VERSION=2 *#SIMETRIX .Model FMMT619 NPN ; ## Description ## ## Effect ## ; ## DC Forward Parameters ## + IS = 5.8032E-13 ; transport saturation current Controls Icbo and where hFE falls with high Ic + NF = 1.02 ; forward current emission coefficient + ISE = 1.5933E-13 ; base-emitter leakage saturation current Controls the fall in hFE that occurs at low Ic + NE = 1.4148 ; base-emitter leakage emission coefficient Controls Icbo and where hFE falls with high Ic. Controls the fall in hFE that occurs at low Ic + BF = 465 ; ideal maximum forward beta Controls peak forward hFE + IKF = 8 ; corner for forward-beta high-current roll-off Current where rollof occurs + NK = 0.8 ; high-current roll-off coefficient Slope of roll off + VAF = 84 ; forward Early voltage controls the variation of collector current with voltage when the transistor is operated in its linear region. ; ## DC Reverse Parameters ## + NR = 1.0006 ; reverse current emission coefficient + ISC = 5E-12 ; base-collector leakage saturation current Controls the fall of reverse hFE at low currents + NC = 1.6 ; base-collector leakage emission coefficient Controls the fall of reverse hFE at low currents + BR = 110 ; ideal maximum reverse beta Controls peak reverse hFE + IKR = 1.4 ; corner for reverse-beta high-current roll-off Current where rollof occurs + VAR = 51 ; reverse Early voltage the reverse version of VAF. ; ## DC Rb Parameters ## + RB = 14.5 ; zero-bias (maximum) base resistance + IRB = 8.00E-06 ; current at which Rb falls halfway to RBM + RBM = 0.2 ; minimum base resistance ; ## DC Re Parameters ## + RE = 0.05 ; emitter ohmic resistance ; ## DC Rc Parameters ## + RC = 0.0375 ; collector ohmic resistance ; ## AC base-emitter Parameters ## + CJE= 2.17E-10 ; base-emitter zero-bias p-n capacitance controls Cbe. + VJE = 0.75 ; base-emitter built-in potential + MJE = 0.33 ; base-emitter p-n grading factor ; ## AC base-collector Parameters ## + CJC = 4E-11 ; base-collector zero-bias p-n capacitance control Ccb and how it varies with Vcb. + VJC = 0.4347 ; base-collector built-in potential control Ccb and how it varies with Vcb. + MJC = 0.3708 ; base-collector p-n grading factor control Ccb and how it varies with Vcb. + XCJC = 1 ; fraction of CJC connected internally to Rb ; ## AC substrate Parameters ## + CJS = 0 ; substrate zero-bias p-n capacitance + VJS = 0.75 ; substrate p-n built-in potential + MJS = 0 ; substrate p-n grading factor ; ## AC Transit Time Parameters ## + TF = 780.0E-12 ; ideal forward transit time controls Ft and switching speeds. + XTF = 0 ; transit time bias dependence coefficient + VTF = 1E+20 ; transit time dependency on Vbc + ITF = 0 ; transit time dependency on Ic + PTF = 0 ; excess phase @ 1/(2p·TF)Hz + TR = 9.00E-09 ; ideal reverse transit time controls switching storage times. ; ##Temperature Parameters ## + XTB = 1.3 ; forward and reverse beta temperature coefficient controls temperature effects on hFE. Try 1.6 for NPN, 1.9 for PNP + XTI = 3 ; IS temperature effect exponent controls temperature effects on saturation current + RCO = 0 ; epitaxial region resistance + TRB1 = 0 ; RB temperature coefficient (linear) + TRB2 = 0 ; RB temperature coefficient (quadratic) + TRC1 = 0 ; RC temperature coefficient (linear) + TRC2 = 0 ; RC temperature coefficient (quadratic) + TRE1 = 0 ; RE temperature coefficient (linear) + TRE2 = 0 ; RE temperature coefficient (quadratic) + TRM1 = 0 ; RBM temperature coefficient (linear) + TRM2 = 0 ; RBM temperature coefficient (quadratic) * T_ABS = ; absolute temperature + T_MEASURED = 27 ; measured temperature * T_REL_GLOBAL = ; relative to current temperature + QUASIMOD = 1 ; quasi-saturation model flag for temperature dependence 1= Gamma, RCO, VO temp dependance 0n. 0=off. + CN = 2.42 ; quasi-saturation temperature coefficient for hole mobility defaults NPN 2.42, PNP 2.20 + D = 0.87 ; quasi-saturation temperature coefficient -hole carrier velocity defaults NPN 0.87, PNP 0.52 + FC = 0.5 ; forward-bias depletion capacitor coefficient + EG = 1.11 ; bandgap voltage (barrier height) + GAMMA = 1E-11 ; epitaxial region doping factor + ISS = 0 ; substrate p-n saturation current + NS = 1 ; substrate p-n emission coefficient + QCO = 0 ; epitaxial region charge factor ; ## Flicker Parameters ## + AF = 1 ; flicker noise exponent + KF = 0 ; flicker noise coefficient 0.0 + VG = 1.206 ; quasi-saturation extrapolated bandgap voltage at 0° K + VO = 10 ; carrier mobility knee voltage * (c) 2019 Diodes Inc * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL *ZETEX FMMT720 Spice Model v2.0 Last Revised 1/5/03 * .MODEL FMMT720 PNP IS =6.261E-13 BF =500 IKF =1.4 VAF =28.4 +ISE=1.057E-13 NE =1.4923 NR =1.00 BR =42 IKR=0.65 VAR=10.21 +ISC=6E-14 NC =1.124 RB =0.078 RE =0.077 RC =0.04 CJC=59.54E-12 +MJC=0.5058 VJC=0.8427 CJE=201.4E-12 MJE=0.5244 VJE=1.021 +TF =0.68E-9 TR =23.7E-9 NK=0.75 XTB=1.8 TRE1=.0025 TRB1=.0025 +TRC1=.0025 * *$ * *ZETEX FMMT720 Spice Model v2.0 Last Revised 1/5/03 * .MODEL FMMT720 PNP IS =6.261E-13 BF =500 IKF =1.4 VAF =28.4 +ISE=1.057E-13 NE =1.4923 NR =1.00 BR =42 IKR=0.65 VAR=10.21 +ISC=6E-14 NC =1.124 RB =0.078 RE =0.077 RC =0.04 CJC=59.54E-12 +MJC=0.5058 VJC=0.8427 CJE=201.4E-12 MJE=0.5244 VJE=1.021 +TF =0.68E-9 TR =23.7E-9 NK=0.75 XTB=1.8 TRE1=.0025 TRB1=.0025 +TRC1=.0025 * *$ * *ZETEX FZT1051A Spice Model v1.0 Last Revised 18/3/97 * .MODEL FZT1051A NPN IS=1.35E-12 NF=1.0 BF=600 IKF=5.0 VAF=120 + ISE=0.6E-13 NE=1.25 NR=1.0 BR=150 IKR=3 VAR=15 + ISC=1.0E-10 NC=1.7 RB=0.1 RE=0.023 RC=0.010 + CJC=90.36E-12 CJE=547.5E-12 MJC=0.385 MJE=0.357 + VJC=0.5 VJE=0.741 TF=600E-12 TR=8E-9 * *$ * *ZETEX FZT1151A Spice Model v1.0 Last Revised 12/12/96 * .MODEL FZT1151A PNP IS=1.7e-12 NF=1.004 ISE=1.02e-13 NE=1.55 BF=562 + VAF=26.01 IKF=3.5 NR=.97 ISC=1.5e-13 NC=1.3 BR=38 + VAR=2.41 IKR=0.3 RE=25.37e-3 RB=250e-3 RC=25e-3 + CJE=440e-12 CJC=160e-12 VJC=1.058 MJC=0.5678 + TF=0.8e-9 TR=55.5e-9 * *$ * *ZETEX FZT489 Spice Model v1.0 Last Revised 11/11/04 * .MODEL FZT489 NPN IS =1.04E-13 BF =195 IKF =1.9 VAF =160 + ISE=1.83E-14 NE =1.35 NR =1.00 BR =140 IKR=0.5 + VAR=30 ISC=6.00E-12 NC =1.5 RB =0.3 RE =0.065 + RC =0.11 CJC=25.37E-12 MJC=0.3281 VJC=0.464 + CJE=122E-12 MJE=0.3412 VJE=0.7631 TF =0.86E-9 + TR =12.5E-9 * *$ * *ZETEX FZT489 Spice Model v1.0 Last Revised 11/11/04 * .MODEL FZT489 NPN IS =1.04E-13 BF =195 IKF =1.9 VAF =160 + ISE=1.83E-14 NE =1.35 NR =1.00 BR =140 IKR=0.5 + VAR=30 ISC=6.00E-12 NC =1.5 RB =0.3 RE =0.065 + RC =0.11 CJC=25.37E-12 MJC=0.3281 VJC=0.464 + CJE=122E-12 MJE=0.3412 VJE=0.7631 TF =0.86E-9 + TR =12.5E-9 * *$ * *ZETEX FZT491A Spice Model v1.0 Last Revised 8/8/05 * .MODEL FZT491A NPN IS =3.05E-13 NF =1.0034 BF =650 IKF=0.8 VAF=165 +ISE=8.0191E-14 NE =1.4126 NR =1.001 BR =120 IKR=0.6 VAR=69 +ISC=1.6E-12 NC =1.38 RB =0.065 RE =0.109 RC =0.075 +CJC=17.2E-12 MJC=0.3429 VJC=0.4298 CJE=96E-12 +TF =0.71E-9 TR =2.5E-9 * *$ * *ZETEX FZT491A Spice Model v1.0 Last Revised 8/8/05 * .MODEL FZT491A NPN IS =3.05E-13 NF =1.0034 BF =650 IKF=0.8 VAF=165 +ISE=8.0191E-14 NE =1.4126 NR =1.001 BR =120 IKR=0.6 VAR=69 +ISC=1.6E-12 NC =1.38 RB =0.065 RE =0.109 RC =0.075 +CJC=17.2E-12 MJC=0.3429 VJC=0.4298 CJE=96E-12 +TF =0.71E-9 TR =2.5E-9 * *$ * *ZETEX FZT549 Spice Model v1.0 Last Revised 26/01/05 * .MODEL FZT549 PNP IS =1.3E-13 BF =200 IKF=1.8 VAF=104 +ISE=6E-14 NE =1.45 BR =50 IKR=0.2 VAR=8 +ISC=3.5E-14 NC =1.23 RB =0.7 RE =0.063 RC =0.122 +CJC=55E-12 MJC=0.3541 VJC=0.1928 CJE=120.9E-12 +MJE=.4685 VJE=1.041 TF =0.51E-9 TR =3.6E-9 * *$ * *ZETEX FZT589 Spice Model v1.0 Last Revised 26/01/05 * .MODEL FZT589 PNP IS =1.3E-13 BF =200 IKF=1.8 VAF=104 +ISE=6E-14 NE =1.45 BR =50 IKR=0.2 VAR=8 +ISC=3.5E-14 NC =1.23 RB =0.7 RE =0.063 RC =0.122 +CJC=55E-12 MJC=0.3541 VJC=0.1928 CJE=120.9E-12 +MJE=.4685 VJE=1.041 TF =0.51E-9 TR =3.6E-9 * *$ * *ZETEX FZT591A Spice Model v1.0 Last Revised 8/8/05 * .MODEL FZT591A PNP IS =3.0572E-13 NF =1.0103 BF =450 IKF=0.93 +VAF=20 ISE=1.5E-14 NE =1.52 NR =1.007 BR =160 IKR=0.08 VAR=33 +ISC=3.8736E-14 NC =1.0893 RB =0.112 RE =0.144 RC =0.156 +CJC=42E-12 MJC=0.4449 VJC=0.3131 CJE=91E-12 +TF =0.51E-9 TR =3.6E-9 * *$ * *ZETEX FZT591A Spice Model v1.0 Last Revised 8/8/05 * .MODEL FZT591A PNP IS =3.0572E-13 NF =1.0103 BF =450 IKF=0.93 +VAF=20 ISE=1.5E-14 NE =1.52 NR =1.007 BR =160 IKR=0.08 VAR=33 +ISC=3.8736E-14 NC =1.0893 RB =0.112 RE =0.144 RC =0.156 +CJC=42E-12 MJC=0.4449 VJC=0.3131 CJE=91E-12 +TF =0.51E-9 TR =3.6E-9 * *$ * *ZETEX FZT690B Spice Model v2.0 Last revision 12/07/07 * .MODEL FZT690B NPN IS=1.5E-12 NF=1 BF=1000 IKF=3 VAF=60 ISE=4E-13 NE=1.37 +NR=1 BR=123 IKR=1 VAR=14.5 ISC=4E-13 NC=1.34 RB=0.1 RE=0.045 RC=0.027 +CJE=250E-12 VJE=0.68 MJE=0.36 CJC=59E-12 VJC=0.49 MJC=0.36 TF=0.77E-9 +TR=18E-9 RCO=0.93 GAMMA=5E-9 QUASIMOD=1 XTB=1.4 TRE1=0.002 TRB1=0.002 +TRC1=0.002 * *$ * *ZETEX FZT690B Spice Model v2.0 Last revision 12/07/07 * .MODEL FZT690B NPN IS=1.5E-12 NF=1 BF=1000 IKF=3 VAF=60 ISE=4E-13 NE=1.37 +NR=1 BR=123 IKR=1 VAR=14.5 ISC=4E-13 NC=1.34 RB=0.1 RE=0.045 RC=0.027 +CJE=250E-12 VJE=0.68 MJE=0.36 CJC=59E-12 VJC=0.49 MJC=0.36 TF=0.77E-9 +TR=18E-9 RCO=0.93 GAMMA=5E-9 QUASIMOD=1 XTB=1.4 TRE1=0.002 TRB1=0.002 +TRC1=0.002 * *$ * *ZETEX FZT790A Spice Model v2.0 Last Revised 1/5/03 * .MODEL FZT790A PNP IS=1.09684E-12 NF=1.0102 BF=650 IKF=1.7 NK=0.75 +VAF=23.5 ISE=9.88593E-14 NE=1.47256 NR=1.00391 BR=270 IKR=0.2 VAR=30 +ISC=5.4933E-14 NC=1.07427 RB=0.055 RE=0.049 RC=0.078 CJC=96E-12 +MJC=0.495 VJC=0.67 CJE=275E-12 TF=0.75E-9 TR=10.8E-9 XTB=1.4 +TRE1=.0025 TRB1=.0025 TRC1=.0025 * *$ * *ZETEX FZT849 Spice Model v1.0 Last Revised 14/3/97 * .MODEL FZT849 NPN IS =5.8591E-13 NF =0.9919 BF =230 IKF=18 VAF=90 + ISE=2.0067E-13 NE =1.4 NR =0.9908 BR =180 IKR=6.8 + VAR=20 ISC=5.3E-13 NC =1.46 RB =0.023 RE =0.0223 + RC =0.015 CJC=200E-12 MJC=0.3006 VJC=0.3532 + CJE=1.21E-9 TF =1.07E-9 TR =9.3E-9 * *$ * *ZETEX FZT949 Spice Model v1.0 Last Revised 14/3/97 * .MODEL FZT949 PNP IS=1.5111E-12 NF=1.0127 BF=208 IKF=12.4 VAF=32.7 +ISE=1.335E-13 NE=1.42 NR=1.009 BR=145 IKR=1.25 VAR=26.5 +ISC=1.392E-13 NC=1.14 RB=0.026 RE=0.019 RC=0.0175 CJC=362E-12 +MJC=0.338 VJC=0.4294 CJE=1.17E-9 TF=1.01E-9 TR=7.5E-9 * *$ * *ZETEX FZT949 Spice Model v1.0 Last Revised 14/3/97 * .MODEL FZT949 PNP IS=1.5111E-12 NF=1.0127 BF=208 IKF=12.4 VAF=32.7 +ISE=1.335E-13 NE=1.42 NR=1.009 BR=145 IKR=1.25 VAR=26.5 +ISC=1.392E-13 NC=1.14 RB=0.026 RE=0.019 RC=0.0175 CJC=362E-12 +MJC=0.338 VJC=0.4294 CJE=1.17E-9 TF=1.01E-9 TR=7.5E-9 * *$ * *ZETEX FZTA14 Spice Model v1.0 Last revision 25/11/2005 * .SUBCKT FZTA14 1 2 3 * C B E Q1 1 2 4 SUB38C Q2 1 4 3 SUB38C 12.75 * .MODEL SUB38C NPN IS=1.1E-14 ISE=7.1E-15 NF=1.012 NE=1.4758 +BF=220 IKF=.12 BR=15 IKR=.05 RE=1.3 RC=.5 RB=.3 VAF=150 +CJE=14.5E-12 CJC=4.14E-12 VJC=.515 MJC=.26 TF=1.15E-9 TR=75E-9 .ENDS FZTA14 * *$ * *SRC=MMBT2222A;DI_MMBT2222A;BJTs NPN; Si; 40.0V 0.600A 200MHz Diodes Inc. Transistor .MODEL DI_MMBT2222A NPN (IS=25.4f NF=1.00 BF=274 VAF=114 + IKF=0.121 ISE=14.3p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.300 RE=0.219 RB=0.877 RC=87.7m + XTB=1.5 CJE=27.6p VJE=1.10 MJE=0.500 CJC=14.2p VJC=0.300 + MJC=0.300 TF=622p TR=124n EG=1.12 ) *SRC=MMBT2222A;DI_MMBT2222A;BJTs NPN; Si; 40.0V 0.600A 200MHz Diodes Inc. Transistor .MODEL DI_MMBT2222A NPN (IS=25.4f NF=1.00 BF=274 VAF=114 + IKF=0.121 ISE=14.3p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.300 RE=0.219 RB=0.877 RC=87.7m + XTB=1.5 CJE=27.6p VJE=1.10 MJE=0.500 CJC=14.2p VJC=0.300 + MJC=0.300 TF=622p TR=124n EG=1.12 ) *SRC=MMBT2222A;DI_MMBT2222A;BJTs NPN; Si; 40.0V 0.600A 200MHz Diodes Inc. Transistor .MODEL DI_MMBT2222A NPN (IS=25.4f NF=1.00 BF=274 VAF=114 + IKF=0.121 ISE=14.3p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.300 RE=0.219 RB=0.877 RC=87.7m + XTB=1.5 CJE=27.6p VJE=1.10 MJE=0.500 CJC=14.2p VJC=0.300 + MJC=0.300 TF=622p TR=124n EG=1.12 ) *SRC=MMBT2222AT;DI_MMBT2222AT;BJTs NPN; Si; 40.0V 0.600A 300MHz Diodes Inc. BJTs .MODEL DI_MMBT2222AT NPN (IS=60.4f NF=1.00 BF=301 VAF=114 + IKF=66.8m ISE=14.8p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.165 RE=0.261 RB=1.04 RC=0.104 + XTB=1.5 CJE=36.2p VJE=1.10 MJE=0.500 CJC=23.1p VJC=0.300 MJC=0.300 + TF=491p TR=82.1n EG=1.12 ) *SRC=MMBT3904;DI_MMBT3904;BJTs NPN; Si; 40.0V 0.200A 347MHz Diodes Inc. NPN Transistor .MODEL DI_MMBT3904 NPN (IS=48.3f NF=1.00 BF=410 VAF=114 + IKF=0.121 ISE=13.1p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.300 RE=2.63 RB=10.5 RC=1.05 + XTB=1.5 CJE=9.67p VJE=1.10 MJE=0.500 CJC=8.70p VJC=0.300 + MJC=0.300 TF=440p TR=74.7n EG=1.12 ) *DIODES_INC_SPICE_MODEL MMBT3904FA *SIMULATOR=SIMETRIX *ORIGIN=DZSL_DPG_IM *DATE=22Oct2013 *VERSION=2.0 .MODEL MMBT3904FA NPN (IS=4.5E-15 NF=1 ISE=2E-15 NE=1.4 BF=170 ISC=30E-15 NC=.995 BR=1.2 NR=1.24 CJE=8.5p VJE=.7 MJE=.345 CJC=2.9p MJC=.23 VJC=.4 RE=.1 RB=5 RC=.1 VAR=2.4 IKR=0.300 VAF=180 IKF=0.121 TF=1n TR=250u) * (c) 2013 Diodes Inc * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL * *DIODES_INC_SPICE_MODEL MMBT3904LP *SIMULATOR=SIMETRIX *ORIGIN=DZSL_DPG_IM *DATE=17Aug2012 *VERSION=1.0 .MODEL MMBT3904LP NPN (IS=4.5E-15 NF=1 ISE=2E-15 NE=1.4 BF=170 ISC=30E-15 NC=.995 BR=1.2 NR=1.24 CJE=8.5p VJE=.7 MJE=.345 CJC=2.9p MJC=.23 VJC=.4 RE=.1 RB=5 RC=.1 VAR=2.4 IKR=0.300 VAF=180 IKF=0.121 TF=1n TR=250u) * (c) 2012 Diodes Inc * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL * *SRC=MMBT3904;DI_MMBT3904;BJTs NPN; Si; 40.0V 0.200A 347MHz Diodes Inc. NPN Transistor .MODEL DI_MMBT3904 NPN (IS=48.3f NF=1.00 BF=410 VAF=114 + IKF=0.121 ISE=13.1p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.300 RE=2.63 RB=10.5 RC=1.05 + XTB=1.5 CJE=9.67p VJE=1.10 MJE=0.500 CJC=8.70p VJC=0.300 + MJC=0.300 TF=440p TR=74.7n EG=1.12 ) *SRC=MMBT3904T;DI_MMBT3904T;BJTs NPN; Si; 40.0V 0.200A 347MHz Diodes Inc. BJTs .MODEL DI_MMBT3904T NPN (IS=20.2f NF=1.00 BF=410 VAF=114 + IKF=30.4m ISE=4.25p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=75.0m RE=0.707 RB=2.83 RC=0.283 + XTB=1.5 CJE=8.92p VJE=1.10 MJE=0.500 CJC=7.10p VJC=0.300 MJC=0.300 + TF=383p TR=69.9n EG=1.12 ) *SRC=MMBT3906;DI_MMBT3906;BJTs PNP; Si; 40.0V 0.200A 257MHz Diodes Inc. Transistor .MODEL DI_MMBT3906 PNP (IS=20.3f NF=1.00 BF=192 VAF=114 + IKF=60.7m ISE=12.9p NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=0.150 RE=1.16 RB=4.63 RC=0.463 + XTB=1.5 CJE=7.60p VJE=1.10 MJE=0.500 CJC=6.52p VJC=0.300 + MJC=0.300 TF=589p TR=98.4n EG=1.12 ) *DIODES_INC_SPICE_MODEL MMBT3906FA *SIMULATOR=SIMETRIX *ORIGIN=DZSL_DPG_IM *DATE=10Jul2013 *VERSION=1.0 .MODEL MMBT3906FA PNP (IS=6E-15 BF=150 NE=1.45 NF=1 ISE=2E-15 ISC=2E-15 NR=1 BR=5 NC=1.025 CJC=6.49E-12 MJC=0.32 VJC=0.5 CJE=8.819E-12 MJE=0.35 VJE=0.7 RE=.8 RC=.6 IKF=170m NK=.70 VAF=12 XTB=1.5 QUASIMOD=1 RCO=1 EG=1.15) * (c) 2013 Diodes Inc * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL * *DIODES_INC_SPICE_MODEL MMBT3906LP *SIMULATOR=SIMETRIX *ORIGIN=DZSL_DPG_SU *DATE=31Aug2012 *VERSION=1.1 .MODEL MMBT3906LP PNP (IS=6E-15 BF=150 NE=1.45 NF=1 ISE=2E-15 ISC=2E-15 NR=1 BR=5 NC=1.025 CJC=6.49E-12 MJC=0.32 VJC=0.5 CJE=8.819E-12 MJE=0.35 VJE=0.7 RE=.8 RC=.6 IKF=170m NK=.70 VAF=12 XTB=1.5 QUASIMOD=1 RCO=1 EG=1.15) * (c) 2012 Diodes Inc * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL * *SRC=MMBT3906;DI_MMBT3906;BJTs PNP; Si; 40.0V 0.200A 257MHz Diodes Inc. Transistor .MODEL DI_MMBT3906 PNP (IS=20.3f NF=1.00 BF=192 VAF=114 + IKF=60.7m ISE=12.9p NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=0.150 RE=1.16 RB=4.63 RC=0.463 + XTB=1.5 CJE=7.60p VJE=1.10 MJE=0.500 CJC=6.52p VJC=0.300 + MJC=0.300 TF=589p TR=98.4n EG=1.12 ) *SRC=MMBT3906T;DI_MMBT3906T;BJTs PNP; Si; 40.0V 0.200A 257MHz Didoes Inc. BJTs .MODEL DI_MMBT3906T PNP (IS=7.21e-016 NF=1.00 BF=410 VAF=114 + IKF=60.7m ISE=1.13p NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=0.150 RE=1.21 RB=4.83 RC=0.483 + XTB=1.5 CJE=10.9p VJE=1.10 MJE=0.500 CJC=6.63p VJC=0.300 MJC=0.300 + TF=571p TR=84.1n EG=1.12 ) *SRC=MMBT4401;DI_MMBT4401;BJTs NPN; Si; 40.0V 0.600A 200MHz Diodes, Inc. transistor .MODEL DI_MMBT4401 NPN (IS=60.9f NF=1.00 BF=410 VAF=114 + IKF=0.364 ISE=25.5p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.900 RE=0.713 RB=2.85 RC=0.285 + XTB=1.5 CJE=36.2p VJE=1.10 MJE=0.500 CJC=15.4p VJC=0.300 + MJC=0.300 TF=717p TR=121n EG=1.12 ) *SRC=UDZ5V6B;DI_UDZ5V6;Diodes;Zener <=10V; 5.60V 0.200W Diodes Inc. Zener Diode *SYM=HZEN .SUBCKT DI_UDZ5V6 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 4.99 .MODEL DF D ( IS=14.7p RS=3.10 N=1.10 + CJO=32.9p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=2.94f RS=1.28 N=0.828 ) *SRC=MMBT4401;DI_MMBT4401;BJTs NPN; Si; 40.0V 0.600A 200MHz Diodes, Inc. transistor .MODEL DI_MMBT4401 NPN (IS=60.9f NF=1.00 BF=410 VAF=114 + IKF=0.364 ISE=25.5p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.900 RE=0.713 RB=2.85 RC=0.285 + XTB=1.5 CJE=36.2p VJE=1.10 MJE=0.500 CJC=15.4p VJC=0.300 + MJC=0.300 TF=717p TR=121n EG=1.12 ) *SRC=UDZ5V6B;DI_UDZ5V6;Diodes;Zener <=10V; 5.60V 0.200W Diodes Inc. Zener Diode *SYM=HZEN .SUBCKT DI_UDZ5V6 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 4.99 .MODEL DF D ( IS=14.7p RS=3.10 N=1.10 + CJO=32.9p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=2.94f RS=1.28 N=0.828 ) *SRC=MMBT4401T;DI_MMBT4401T;BJTs NPN; Si; 40.0V 0.600A 275MHz Diodes Inc. BJTs .MODEL DI_MMBT4401T NPN (IS=1.27p NF=1.00 BF=410 VAF=114 + IKF=60.7m ISE=47.7p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.150 RE=0.261 RB=1.04 RC=0.104 + XTB=1.5 CJE=27.7p VJE=1.10 MJE=0.500 CJC=14.2p VJC=0.300 MJC=0.300 + TF=533p TR=84.1n EG=1.12 ) *SRC=MMBT4403;DI_MMBT4403;BJTs PNP; Si; 40.0V 0.600A 300MHz Diodes Inc. Transistor .MODEL DI_MMBT4403 PNP (IS=26.9f NF=1.00 BF=274 VAF=114 + IKF=0.304 ISE=23.2p NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=0.750 RE=0.263 RB=1.05 RC=0.105 + XTB=1.5 CJE=36.2p VJE=1.10 MJE=0.500 CJC=24.6p VJC=0.300 + MJC=0.300 TF=500p TR=82.4n EG=1.12 ) ***************************************************************************************************************************************** *SRC=MMBT4403T;DI_MMBT4403T;BJTs PNP; Si; 40.0V 0.600A 200MHz Diodes Inc. BJTs .MODEL DI_MMBT4403T PNP (IS=60.4f NF=1.00 BF=410 VAF=114 + IKF=0.304 ISE=23.2p NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=0.750 RE=0.261 RB=1.04 RC=0.104 + XTB=1.5 CJE=27.7p VJE=1.10 MJE=0.500 CJC=18.5p VJC=0.300 + MJC=0.300 TF=667p TR=84.1n EG=1.12 ) ***************************************************************************************************************************************** *SRC=MMBT6427;DI_MMBT6427;BJTs NPN;Darlington;40.0V 0.500A Diodes Inc. Darlington Transistor *SYM=DARBJTN .SUBCKT DII_MMBT6427 col base emtr Q1 col base eb QPWR .1 Q2 col eb emtr QPWR D1 emtr col DSUB D2 eb base DSUB .MODEL QPWR NPN (IS=600f NF=1.00 BF=448 VAF=114 + IKF=0.400 ISE=10.9p NE=2.00 BR=4.00 NR=1.00 + VAR=48.0 IKR=0.600 RE=0.300 RB=1.20 RC=0.120 + XTB=1.5 CJE=189p VJE=0.740 MJE=0.450 CJC=13.9p + VJC=1.10 MJC=0.240 TF=1.30n TR=659n ) *SRC=MMBTA13;DI_MMBTA13;BJTs NPN;Darlington;30.0V 0.300A Diodes Inc. NPN Darlington *SYM=DARBJTN .SUBCKT DI_MMBTA13 col base emtr Q1 col base eb QPWR .1 Q2 col eb emtr QPWR D1 emtr col DSUB D2 eb base DSUB .MODEL QPWR NPN (IS=360f NF=1.00 BF=134 VAF=98.6 + IKF=0.240 ISE=21.9p NE=2.00 BR=4.00 NR=1.00 + VAR=40.0 IKR=0.360 RE=4.00 RB=16.0 RC=1.60 + XTB=1.5 CJE=189p VJE=0.740 MJE=0.450 CJC=13.9p + VJC=1.10 MJC=0.240 TF=3.77n TR=617n ) .MODEL DSUB D( IS=360f N=1 RS=4.00 BV=30.0 + IBV=.001 CJO=13.9p TT=617n ) .ENDS *SRC=MMBTA14;DI_MMBTA14;BJTs NPN;Darlington;30.0V 0.300A Diodes Inc. Darlington Transistor *SYM=DARBJTN .SUBCKT DI_MMBTA14 col base emtr Q1 col base eb QPWR .1 Q2 col eb emtr QPWR D1 emtr col DSUB D2 eb base DSUB .MODEL QPWR NPN (IS=360f NF=1.00 BF=141 VAF=98.6 + IKF=0.240 ISE=20.8p NE=2.00 BR=4.00 NR=1.00 + VAR=40.0 IKR=0.360 RE=0.333 RB=1.33 RC=0.133 + XTB=1.5 CJE=189p VJE=0.740 MJE=0.450 CJC=13.9p + VJC=1.10 MJC=0.240 TF=3.57n TR=614n )=0.133 + XTB=1.5 CJE=189p VJE=0.740 MJE=0.450 CJC=13.9p + VJC=1.10 MJC=0.240 TF=3.57n TR=614n ) .MODEL DSUB D( IS=360f N=1 RS=0.333 BV=30.0 + IBV=.001 CJO=13.9p TT=614n ) *SRC=MMBTA63;DI_MMBTA63;BJTs PNP;Darlington;30.0V 0.500A Diodes Inc. Darlington Transistor *SYM=DARBJTP .SUBCKT DII_MMBTA63 col base emtr Q1 col base eb QPWR .1 Q2 col eb emtr QPWR D1 col emtr DSUB D2 base eb DSUB .MODEL QPWR PNP (IS=600f NF=1.00 BF=100 VAF=98.6 + IKF=0.400 ISE=49.0p NE=2.00 BR=4.00 NR=1.00 + VAR=40.0 IKR=0.600 RE=0.340 RB=1.36 RC=0.136 + XTB=1.5 CJE=115p VJE=0.740 MJE=0.450 CJC=16.5p + VJC=1.10 MJC=0.240 TF=5.05n TR=641n ) *SRC=MMBTA64;DI_MMBTA64;BJTs PNP;Darlington;30.0V 0.500A Diodes Inc. Darlington Transistor *SYM=DARBJTP .SUBCKT DII_MMBTA64 col base emtr Q1 col base eb QPWR .1 Q2 col eb emtr QPWR D1 col emtr DSUB D2 base eb DSUB .MODEL QPWR PNP (IS=600f NF=1.00 BF=141 VAF=98.6 + IKF=0.400 ISE=34.6p NE=2.00 BR=4.00 NR=1.00 + VAR=40.0 IKR=0.600 RE=0.340 RB=1.36 RC=0.136 + XTB=1.5 CJE=115p VJE=0.740 MJE=0.450 CJC=16.5p + VJC=1.10 MJC=0.240 TF=3.57n TR=614n ) *SRC=MMBTH24;DI_MMBTH24;BJTs NPN; Si; 40.0V 50.0mA 1.00kMHz Diodes Inc. Transistor .MODEL DI_MMBTH24 NPN (IS=1.26e-016 NF=1.00 BF=95.8 VAF=114 + IKF=24.3m ISE=1.28p NE=2.00 BR=4.00 NR=1.00 + VAR=16.0 IKR=60.0m RE=1.51 RB=6.05 RC=0.605 + XTB=1.5 CJE=6.27p VJE=1.10 MJE=0.500 CJC=2.02p VJC=0.300 + MJC=0.300 TF=130p TR=27.4n EG=1.12 ) *SRC=MMDT2222A;DI_MMDT2222A;BJTs NPN; Si; 40.0V 0.600A 300MHz Diodes Inc. BJTs - Single device of dual .MODEL DI_MMDT2222A NPN (IS=61.0f NF=1.00 BF=410 VAF=114 + IKF=0.121 ISE=14.8p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.300 RE=0.269 RB=1.08 RC=0.108 + XTB=1.5 CJE=27.7p VJE=1.10 MJE=0.500 CJC=15.3p VJC=0.300 + MJC=0.300 TF=496p TR=81.1n EG=1.12 ) *SRC=MMDT2222V;DI_MMDT2222V;BJTs NPN; Si; 40.0V 0.600A 300MHz Diodes Inc. BJTs - Single element of dual .MODEL DI_MMDT2222V NPN (IS=61.0f NF=1.00 BF=410 VAF=114 + IKF=0.121 ISE=14.8p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.300 RE=0.269 RB=1.08 RC=0.108 + XTB=1.5 CJE=27.7p VJE=1.10 MJE=0.500 CJC=15.3p VJC=0.300 + MJC=0.300 TF=496p TR=81.1n EG=1.12 ) ***************************************************************************************************************************************** *SRC=MMDT2227;DI_MMDT2227_NPN;BJTs NPN; Si; 40.0V 0.600A 300MHz Diodes Inc. BJTs - Complementary .MODEL DI_MMDT2227_NPN NPN (IS=61.0f NF=1.00 BF=410 VAF=114 + IKF=0.121 ISE=14.8p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.300 RE=0.269 RB=1.08 RC=0.108 + XTB=1.5 CJE=27.7p VJE=1.10 MJE=0.500 CJC=15.3p VJC=0.300 + MJC=0.300 TF=496p TR=81.1n EG=1.12 ) *SRC=MMDT2227;DI_MMDT2227_PNP;BJTs PNP; Si; 60.0V 0.600A 300MHz Diodes Inc. BJTs - Complementary .MODEL DI_MMDT2227_PNP PNP (IS=61.2f NF=1.00 BF=410 VAF=139 + IKF=0.279 ISE=22.4p NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=0.690 RE=0.361 RB=1.44 RC=0.144 + XTB=1.5 CJE=27.6p VJE=1.10 MJE=0.500 CJC=18.5p VJC=0.300 + MJC=0.300 TF=491p TR=81.1n EG=1.12 ) ***************************************************************************************************************************************** *SRC=MMDT2227M;DI_MMDT2227M_NPN Element Only;BJTs NPN; Si; 40.0V 0.600A 300MHz Diodes Inc. BJTs - Complementary .MODEL DI_MMDT2227M_NPN NPN (IS=61.0f NF=1.00 BF=410 VAF=114 + IKF=0.121 ISE=14.8p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.300 RE=0.269 RB=1.08 RC=0.108 + XTB=1.5 CJE=27.7p VJE=1.10 MJE=0.500 CJC=15.3p VJC=0.300 + MJC=0.300 TF=496p TR=81.1n EG=1.12 ) *SRC=MMDT2227M;DI_MMDT2227M_PNP Element Only;BJTs PNP; Si; 60.0V 0.600A 300MHz Diodes Inc. BJTs - Complementary .MODEL DI_MMDT2227M_PNP PNP (IS=61.2f NF=1.00 BF=410 VAF=139 + IKF=0.279 ISE=22.4p NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=0.690 RE=0.361 RB=1.44 RC=0.144 + XTB=1.5 CJE=27.6p VJE=1.10 MJE=0.500 CJC=18.5p VJC=0.300 + MJC=0.300 TF=491p TR=81.1n EG=1.12 ) ***************************************************************************************************************************************** *SRC=MMDT2227;DI_MMDT2227_NPN;BJTs NPN; Si; 40.0V 0.600A 300MHz Diodes Inc. BJTs - Complementary .MODEL DI_MMDT2227_NPN NPN (IS=61.0f NF=1.00 BF=410 VAF=114 + IKF=0.121 ISE=14.8p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.300 RE=0.269 RB=1.08 RC=0.108 + XTB=1.5 CJE=27.7p VJE=1.10 MJE=0.500 CJC=15.3p VJC=0.300 + MJC=0.300 TF=496p TR=81.1n EG=1.12 ) *SRC=MMDT2227;DI_MMDT2227_PNP;BJTs PNP; Si; 60.0V 0.600A 300MHz Diodes Inc. BJTs - Complementary .MODEL DI_MMDT2227_PNP PNP (IS=61.2f NF=1.00 BF=410 VAF=139 + IKF=0.279 ISE=22.4p NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=0.690 RE=0.361 RB=1.44 RC=0.144 + XTB=1.5 CJE=27.6p VJE=1.10 MJE=0.500 CJC=18.5p VJC=0.300 + MJC=0.300 TF=491p TR=81.1n EG=1.12 ) ***************************************************************************************************************************************** *SRC=MMBT3904;DI_MMBT3904;BJTs NPN; Si; 40.0V 0.200A 347MHz Diodes Inc. NPN Transistor .MODEL DI_MMBT3904 NPN (IS=48.3f NF=1.00 BF=410 VAF=114 + IKF=0.121 ISE=13.1p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.300 RE=2.63 RB=10.5 RC=1.05 + XTB=1.5 CJE=9.67p VJE=1.10 MJE=0.500 CJC=8.70p VJC=0.300 + MJC=0.300 TF=440p TR=74.7n EG=1.12 ) *SRC=MMBT3904;DI_MMBT3904;BJTs NPN; Si; 40.0V 0.200A 347MHz Diodes Inc. NPN Transistor .MODEL DI_MMBT3904 NPN (IS=48.3f NF=1.00 BF=410 VAF=114 + IKF=0.121 ISE=13.1p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.300 RE=2.63 RB=10.5 RC=1.05 + XTB=1.5 CJE=9.67p VJE=1.10 MJE=0.500 CJC=8.70p VJC=0.300 + MJC=0.300 TF=440p TR=74.7n EG=1.12 ) *SRC=MMDT3904VC;DI_MMDT3904VC;BJTs NPN; Si; 40.0V 0.200A 347MHz Diodes Inc. NPN Transistor .MODEL DI_MMDT3904VC NPN (IS=20.3f NF=1.00 BF=274 VAF=114 + IKF=36.4m ISE=6.99p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=90.0m RE=0.657 RB=2.63 RC=0.263 + XTB=1.5 CJE=8.29p VJE=1.10 MJE=0.500 CJC=7.10p VJC=0.300 + MJC=0.300 TF=426p TR=71.3n EG=1.12 ) *SRC=MMDT3906;DI_MMDT3906;BJTs PNP; Si; 40.0V 0.200A 257MHz Diodes Inc. BJTs - Single device of dual .MODEL DI_MMDT3906 PNP (IS=7.21e-016 NF=1.00 BF=410 VAF=114 + IKF=48.6m ISE=1.01p NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=0.120 RE=1.21 RB=4.83 RC=0.483 + XTB=1.5 CJE=10.9p VJE=1.10 MJE=0.500 CJC=7.57p VJC=0.300 MJC=0.300 + TF=558p TR=84.1n EG=1.12 ) *SRC=MMDT3906;DI_MMDT3906;BJTs PNP; Si; 40.0V 0.200A 257MHz Diodes Inc. BJTs - Single device of dual .MODEL DI_MMDT3906 PNP (IS=7.21e-016 NF=1.00 BF=410 VAF=114 + IKF=48.6m ISE=1.01p NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=0.120 RE=1.21 RB=4.83 RC=0.483 + XTB=1.5 CJE=10.9p VJE=1.10 MJE=0.500 CJC=7.57p VJC=0.300 MJC=0.300 + TF=558p TR=84.1n EG=1.12 ) *SRC=MMDT3906VC;DI_MMDT3906VC;BJTs PNP; Si; 40.0V 0.200A 257MHz Diodes, Inc. PNP .MODEL DI_MMDT3906VC PNP (IS=20.3f NF=1.00 BF=274 VAF=114 + IKF=36.4m ISE=6.99p NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=90.0m RE=1.01 RB=4.03 RC=0.403 + XTB=1.5 CJE=12.1p VJE=1.10 MJE=0.500 CJC=10.7p VJC=0.300 + MJC=0.300 TF=531p TR=85.6n EG=1.12 ) ***************************************************************************************************************************************** *SRC=MMDT3946;DI_MMDT3946_NPN;BJTs NPN; Si; 40.0V 0.200A 347MHz Diodes Inc. BJTs - Complementary .MODEL DI_MMDT3946_NPN NPN (IS=5.81e-016 NF=1.00 BF=410 VAF=114 + IKF=0.304 ISE=2.28p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.750 RE=0.707 RB=2.83 RC=0.283 + XTB=1.5 CJE=9.67p VJE=1.10 MJE=0.500 CJC=6.86p VJC=0.300 + MJC=0.300 TF=450p TR=70.2n EG=1.12 ) *SRC=MMDT3946;DI_MMDT3946_PNP;BJTs PNP; Si; 40.0V 0.200A 257MHz Diodes Inc. BJTs - Complementary .MODEL DI_MMDT3946_PNP PNP (IS=7.21e-016 NF=1.00 BF=410 VAF=114 + IKF=48.6m ISE=1.01p NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=0.120 RE=1.21 RB=4.83 RC=0.483 + XTB=1.5 CJE=10.9p VJE=1.10 MJE=0.500 CJC=7.57p VJC=0.300 + MJC=0.300 TF=558p TR=84.1n EG=1.12 ) ***************************************************************************************************************************************** *SRC=MMDT3946LP4;MMDT3946LP4_NPN;BJTs NPN; Si; 40.0V 0.200A 375MHz .MODEL MMDT3946LP4_NPN NPN (IS=7.48e-016 NF=1.00 BF=141 VAF=114 + IKF=0.118 ISE=6.24f NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.180 RE=0.477 RB=1.91 RC=0.191 + XTB=1.5 CJE=11.1p VJE=1.10 MJE=0.500 CJC=4.97p VJC=0.300 + MJC=0.300 TF=401p TR=69.4n EG=1.12 ) *SRC=MMDT3946LP4;MMDT3946LP4_PNP;BJTs PNP; Si; 40.0V 0.200A 490MHz .MODEL MMDT3946LP4_PNP PNP (IS=5.58e-016 NF=1.00 BF=162 VAF=114 + IKF=98.0m ISE=4.72f NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=0.150 RE=0.865 RB=3.46 RC=0.346 + XTB=1.5 CJE=11.1p VJE=1.10 MJE=0.500 CJC=6.63p VJC=0.300 + MJC=0.300 TF=301p TR=52.4n EG=1.12 ) ***************************************************************************************************************************************** *SRC=MMDT3946;DI_MMDT3946_NPN;BJTs NPN; Si; 40.0V 0.200A 347MHz Diodes Inc. BJTs - Complementary .MODEL DI_MMDT3946_NPN NPN (IS=5.81e-016 NF=1.00 BF=410 VAF=114 + IKF=0.304 ISE=2.28p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.750 RE=0.707 RB=2.83 RC=0.283 + XTB=1.5 CJE=9.67p VJE=1.10 MJE=0.500 CJC=6.86p VJC=0.300 + MJC=0.300 TF=450p TR=70.2n EG=1.12 ) *SRC=MMDT3946;DI_MMDT3946_PNP;BJTs PNP; Si; 40.0V 0.200A 257MHz Diodes Inc. BJTs - Complementary .MODEL DI_MMDT3946_PNP PNP (IS=7.21e-016 NF=1.00 BF=410 VAF=114 + IKF=48.6m ISE=1.01p NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=0.120 RE=1.21 RB=4.83 RC=0.483 + XTB=1.5 CJE=10.9p VJE=1.10 MJE=0.500 CJC=7.57p VJC=0.300 + MJC=0.300 TF=558p TR=84.1n EG=1.12 ) ***************************************************************************************************************************************** *SRC=MMDT4401;DI_MMDT4401;BJTs NPN; Si; 40.0V 0.600A 275MHz Diodes Inc. BJTs - Single device of dual .MODEL DI_MMDT4401 NPN (IS=60.7f NF=1.00 BF=410 VAF=114 + IKF=0.219 ISE=19.7p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.540 RE=85.8m RB=0.343 RC=34.3m + XTB=1.5 CJE=36.2p VJE=1.10 MJE=0.500 CJC=15.4p VJC=0.300 MJC=0.300 + TF=539p TR=84.1n EG=1.12 ) *SRC=MMDT4401;DI_MMDT4401;BJTs NPN; Si; 40.0V 0.600A 275MHz Diodes Inc. BJTs - Single device of dual .MODEL DI_MMDT4401 NPN (IS=60.7f NF=1.00 BF=410 VAF=114 + IKF=0.219 ISE=19.7p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.540 RE=85.8m RB=0.343 RC=34.3m + XTB=1.5 CJE=36.2p VJE=1.10 MJE=0.500 CJC=15.4p VJC=0.300 MJC=0.300 + TF=539p TR=84.1n EG=1.12 ) *SRC=MMDT4403;DI_MMDT4403;BJTs PNP; Si; 40.0V 0.600A 275MHz Diodes Inc. BJTs - Single device of dual .MODEL DI_MMDT4403 PNP (IS=61.0f NF=1.00 BF=410 VAF=114 + IKF=0.340 ISE=24.7p NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=0.840 RE=0.269 RB=1.08 RC=0.108 + XTB=1.5 CJE=27.6p VJE=1.10 MJE=0.500 CJC=18.5p VJC=0.300 MJC=0.300 + TF=516p TR=84.1n EG=1.12 ) ***************************************************************************************************************************************** *SRC=MMDT4413;DI_MMDT4413_NPN;BJTs NPN; Si; 40.0V 0.600A 275MHz Diodes Inc. BJTs - Complementaryl .MODEL DI_MMDT4413_NPN NPN (IS=60.7f NF=1.00 BF=410 VAF=114 + IKF=0.219 ISE=19.7p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.540 RE=85.8m RB=0.343 RC=34.3m + XTB=1.5 CJE=36.2p VJE=1.10 MJE=0.500 CJC=15.4p VJC=0.300 + MJC=0.300 TF=539p TR=84.1n EG=1.12 ) *SRC=MMDT4413;DI_MMDT4413_PNP;BJTs PNP; Si; 40.0V 0.600A 275MHz Diodes Inc. BJTs - Complementary .MODEL DI_MMDT4413_PNP PNP (IS=61.0f NF=1.00 BF=410 VAF=114 + IKF=0.340 ISE=24.7p NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=0.840 RE=0.269 RB=1.08 RC=0.108 + XTB=1.5 CJE=27.6p VJE=1.10 MJE=0.500 CJC=18.5p VJC=0.300 + MJC=0.300 TF=516p TR=84.1n EG=1.12 ) ***************************************************************************************************************************************** *SRC=MMST2222A;DI_MMST2222A;BJTs NPN; Si; 40.0V 0.600A 300MHz Diodes Inc. BJTs .MODEL DI_MMST2222A NPN (IS=61.0f NF=1.00 BF=410 VAF=114 + IKF=0.121 ISE=14.8p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.300 RE=0.269 RB=1.08 RC=0.108 + XTB=1.5 CJE=27.6p VJE=1.10 MJE=0.500 CJC=15.0p VJC=0.300 MJC=0.300 + TF=496p TR=84.1n EG=1.12 ) *SRC=MMST3904;DI_MMST3904;BJTs NPN; Si; 40.0V 0.200A 347MHz Diodes Inc. BJTs .MODEL DI_MMST3904 NPN (IS=3.95e-016 NF=1.00 BF=410 VAF=114 + IKF=30.4m ISE=593f NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=75.0m RE=0.707 RB=2.83 RC=0.283 + XTB=1.5 CJE=9.95p VJE=1.10 MJE=0.500 CJC=8.99p VJC=0.300 MJC=0.300 + TF=367p TR=70.2n EG=1.12 ) *SRC=MMST3904;DI_MMST3904;BJTs NPN; Si; 40.0V 0.200A 347MHz Diodes Inc. BJTs .MODEL DI_MMST3904 NPN (IS=3.95e-016 NF=1.00 BF=410 VAF=114 + IKF=30.4m ISE=593f NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=75.0m RE=0.707 RB=2.83 RC=0.283 + XTB=1.5 CJE=9.95p VJE=1.10 MJE=0.500 CJC=8.99p VJC=0.300 MJC=0.300 + TF=367p TR=70.2n EG=1.12 ) *SRC=MMST3906;DI_MMST3906;BJTs PNP; Si; 40.0V 0.200A 347MHz Diodes Inc. BJTs .MODEL DI_MMST3906 PNP (IS=7.06e-016 NF=1.00 BF=410 VAF=114 + IKF=60.7m ISE=1.12p NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=0.150 RE=1.16 RB=4.63 RC=0.463 + XTB=1.5 CJE=7.84p VJE=1.10 MJE=0.500 CJC=7.10p VJC=0.300 MJC=0.300 + TF=422p TR=84.1n EG=1.12 ) *SRC=MMST4401;DI_MMST4401;BJTs NPN; Si; 40.0V 0.600A 275MHz Diodes Inc. BJTs .MODEL DI_MMST4401 NPN (IS=1.27p NF=1.00 BF=410 VAF=114 + IKF=60.7m ISE=47.7p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.150 RE=0.261 RB=1.04 RC=0.104 + XTB=1.5 CJE=27.7p VJE=1.10 MJE=0.500 CJC=14.2p VJC=0.300 + MJC=0.300 TF=533p TR=84.1n EG=1.12 ) *SRC=MMST4403;DI_MMST4403;BJTs PNP; Si; 40.0V 0.600A 300MHz Diodes Inc. BJTs .MODEL DI_MMST4403 PNP (IS=60.4f NF=1.00 BF=410 VAF=114 + IKF=0.334 ISE=24.3p NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=0.825 RE=0.261 RB=1.04 RC=0.104 + XTB=1.5 CJE=31.4p VJE=1.10 MJE=0.500 CJC=18.5p VJC=0.300 MJC=0.300 + TF=486p TR=81.1n EG=1.12 ) *SRC=MMST6427;DI_MMST6427;BJTs NPN;Darlington;40.0V 0.500A Diodes Inc. Darlington Transistor *SYM=DARBJTN .SUBCKT DII_MMST6427 col base emtr Q1 col base eb QPWR .1 Q2 col eb emtr QPWR D1 emtr col DSUB D2 eb base DSUB .MODEL QPWR NPN (IS=600f NF=1.00 BF=448 VAF=114 + IKF=0.400 ISE=10.9p NE=2.00 BR=4.00 NR=1.00 + VAR=48.0 IKR=0.600 RE=0.300 RB=1.20 RC=0.120 + XTB=1.5 CJE=189p VJE=0.740 MJE=0.450 CJC=13.9p + VJC=1.10 MJC=0.240 TF=1.30n TR=659n ) *SRC=MMSTA13;DI_MMSTA13;BJTs NPN;Darlington;30.0V 0.300A Diodes Inc. Darlington Transistor *SYM=DARBJTN .SUBCKT DI_MMSTA13 col base emtr Q1 col base eb QPWR .1 Q2 col eb emtr QPWR D1 emtr col DSUB D2 eb base DSUB .MODEL QPWR NPN (IS=360f NF=1.00 BF=100 VAF=98.6 + IKF=0.240 ISE=29.4p NE=2.00 BR=4.00 NR=1.00 + VAR=40.0 IKR=0.360 RE=0.333 RB=1.33 RC=0.133 + XTB=1.5 CJE=189p VJE=0.740 MJE=0.450 CJC=13.9p + VJC=1.10 MJC=0.240 TF=5.05n TR=641n ) *SRC=MMSTA14;DI_MMSTA14;BJTs NPN;Darlington;30.0V 0.300A Diodes Inc. Darlington Transistor *SYM=DARBJTN .SUBCKT DI_MMSTA14 col base emtr Q1 col base eb QPWR .1 Q2 col eb emtr QPWR D1 emtr col DSUB D2 eb base DSUB .MODEL QPWR NPN (IS=360f NF=1.00 BF=141 VAF=98.6 + IKF=0.240 ISE=20.8p NE=2.00 BR=4.00 NR=1.00 + VAR=40.0 IKR=0.360 RE=0.333 RB=1.33 RC=0.133 + XTB=1.5 CJE=189p VJE=0.740 MJE=0.450 CJC=13.9p + VJC=1.10 MJC=0.240 TF=3.57n TR=614n ) *SRC=MMSTA63;DI_MMSTA63;BJTs PNP;Darlington;30.0V 0.500A Diodes Inc. Darlington Transistor *SYM=DARBJTP .SUBCKT MMSTA63 col base emtr Q1 col base eb QPWR .1 Q2 col eb emtr QPWR .MODEL QPWR PNP (IS=600f NF=1.00 BF=100 VAF=98.6 + IKF=0.400 ISE=49.0p NE=2.00 BR=4.00 NR=1.00 + VAR=40.0 IKR=0.600 RE=0.340 RB=1.36 RC=0.136 + XTB=1.5 CJE=115p VJE=0.740 MJE=0.450 CJC=16.5p + VJC=1.10 MJC=0.240 TF=5.05n TR=641n ) .ENDS *SRC=MMSTA64;DI_MMSTA64;BJTs PNP;Darlington;30.0V 0.500A Diodes Inc. Darlington Transistor *SYM=DARBJTP .SUBCKT DII_MMSTA64 col base emtr Q1 col base eb QPWR .1 Q2 col eb emtr QPWR D1 col emtr DSUB D2 base eb DSUB .MODEL QPWR PNP (IS=600f NF=1.00 BF=141 VAF=98.6 + IKF=0.400 ISE=34.6p NE=2.00 BR=4.00 NR=1.00 + VAR=40.0 IKR=0.600 RE=0.340 RB=1.36 RC=0.136 + XTB=1.5 CJE=115p VJE=0.740 MJE=0.450 CJC=16.5p + VJC=1.10 MJC=0.240 TF=3.57n TR=614n ) * *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG_GM *SIMULATOR=PSPICE *DATE=10FEB2011 *VERSION=1 *PIN_ORDER * 1=E2 8=C2 * 2=B2 7=C2 * 3=E1 6=C1 * 4=B1 5=C1 * .SUBCKT ZDT6790 1 2 3 4 5 6 7 8 Q1 11 4 3 Nmod Q2 12 2 1 Pmod RP1 11 5 0.001 RP2 11 6 0.001 RP3 12 7 0.001 RP4 12 8 0.001 * .MODEL Nmod NPN IS=1.5E-12 NF=1 BF=1000 IKF=3 VAF=60 ISE=4E-13 NE=1.37 + NR=1 BR=123 IKR=1 VAR=14.5 ISC=4E-13 NC=1.34 RB=0.1 RE=0.045 RC=0.027 + CJE=250E-12 VJE=0.68 MJE=0.36 CJC=59E-12 VJC=0.49 MJC=0.36 TF=0.77E-9 + TR=18E-9 RCO=0.93 GAMMA=5E-9 QUASIMOD=1 XTB=1.4 TRE1=0.002 TRB1=0.002 + TRC1=0.002 .MODEL Pmod PNP IS=1.09684E-12 NF=1.0102 BF=650 IKF=1.7 NK=0.75 + VAF=23.5 ISE=9.88593E-14 NE=1.47256 NR=1.00391 BR=270 IKR=0.2 VAR=30 + ISC=5.4933E-14 NC=1.07427 RB=0.055 RE=0.049 RC=0.078 CJC=96E-12 + MJC=0.495 VJC=0.67 CJE=275E-12 TF=0.75E-9 TR=10.8E-9 XTB=1.4 + TRE1=.0025 TRB1=.0025 TRC1=.0025 .ENDS * *$ *ZETEX ZTX1051A Spice Model v1.0 Last Revised 16/12/94 * .MODEL ZTX1051A NPN IS=1.35E-12 NF=1.0 BF=600 IKF=5.0 VAF=120 + ISE=0.6E-13 NE=1.25 NR=1.0 BR=150 IKR=3 VAR=15 + ISC=1.0E-10 NC=1.7 RB=0.1 RE=0.023 RC=0.010 + CJC=90.36E-12 CJE=547.5E-12 MJC=0.385 MJE=0.357 + VJC=0.5 VJE=0.741 TF=600E-12 TR=8E-9 * *$ * *ZETEX ZTX450 Spice Model v1.0 Last Revised 1/4/90 * .MODEL ZTX450 NPN IS =3.941445E-14 BF =175 VAF=109.45 NF =1 IKF=.8 +ISE=7.4025E-15 NE =1.3 BR =20.5 VAR=14.25 NR =.974 IKR=.1 ISC=3.157E-13 +NC =1.2 RB =1.1 RE =.1259 RC =.0539 CJE=63E-12 TF =.75E-9 CJC=15.8E-12 +TR =85E-9 VJC=.505 MJC=.39 * *$ * *ZETEX ZTX450 Spice Model v1.0 Last Revised 1/4/90 * .MODEL ZTX450 NPN IS =3.941445E-14 BF =175 VAF=109.45 NF =1 IKF=.8 +ISE=7.4025E-15 NE =1.3 BR =20.5 VAR=14.25 NR =.974 IKR=.1 ISC=3.157E-13 +NC =1.2 RB =1.1 RE =.1259 RC =.0539 CJE=63E-12 TF =.75E-9 CJC=15.8E-12 +TR =85E-9 VJC=.505 MJC=.39 * *$ * *ZETEX ZTX549 Spice Model v1.0 Last Revised 11/10/94 * .MODEL ZTX549 PNP IS =1.3E-13 BF =200 IKF=1.8 VAF=104 + ISE=6E-14 NE =1.45 BR =50 IKR=0.2 VAR=8 + ISC=3.5E-14 NC =1.23 RB =0.7 RE =0.063 RC =0.122 + CJC=55E-12 MJC=0.3541 VJC=0.1928 CJE=120.9E-12 + MJE=.4685 VJE=1.041 TF =0.51E-9 TR =3.6E-9 * *$ * *ZETEX ZTX550 Spice Model v1.0 Last Revised 24/7/01 * .MODEL ZTX550 PNP IS =3.2E-14 BF =170 VAF=45 NF =0.977 IKF=1.25 ISE=7E-15 +NE =1.35 BR =50 VAR=50 NR =.986 IKR=0.15 ISC=0.9E-14 NC =1.08 RB =0.16 +RE =0.195 RC =0.185 CJE=104E-12 TF =0.7E-9 CJC=30.5E-12 TR =3E-9 VJC=0.395 +MJC=0.415 * *$ * *ZETEX ZTX550 Spice Model v1.0 Last Revised 24/7/01 * .MODEL ZTX550 PNP IS =3.2E-14 BF =170 VAF=45 NF =0.977 IKF=1.25 ISE=7E-15 +NE =1.35 BR =50 VAR=50 NR =.986 IKR=0.15 ISC=0.9E-14 NC =1.08 RB =0.16 +RE =0.195 RC =0.185 CJE=104E-12 TF =0.7E-9 CJC=30.5E-12 TR =3E-9 VJC=0.395 +MJC=0.415 * *$ * *ZETEX ZTX690B Spice Model v2.0 Last revision 12/07/07 * .MODEL ZTX690B NPN IS=1.5E-12 NF=1 BF=1000 IKF=3 VAF=60 ISE=4E-13 NE=1.37 +NR=1 BR=123 IKR=1 VAR=14.5 ISC=4E-13 NC=1.34 RB=0.1 RE=0.045 RC=0.027 +CJE=250E-12 VJE=0.68 MJE=0.36 CJC=59E-12 VJC=0.49 MJC=0.36 TF=0.77E-9 +TR=18E-9 RCO=0.93 GAMMA=5E-9 QUASIMOD=1 XTB=1.4 TRE1=0.002 TRB1=0.002 +TRC1=0.002 * *$ * *ZETEX ZTX690B Spice Model v2.0 Last revision 12/07/07 * .MODEL ZTX690B NPN IS=1.5E-12 NF=1 BF=1000 IKF=3 VAF=60 ISE=4E-13 NE=1.37 +NR=1 BR=123 IKR=1 VAR=14.5 ISC=4E-13 NC=1.34 RB=0.1 RE=0.045 RC=0.027 +CJE=250E-12 VJE=0.68 MJE=0.36 CJC=59E-12 VJC=0.49 MJC=0.36 TF=0.77E-9 +TR=18E-9 RCO=0.93 GAMMA=5E-9 QUASIMOD=1 XTB=1.4 TRE1=0.002 TRB1=0.002 +TRC1=0.002 * *$ * *ZETEX ZTX790A Spice Model v2.0 Last Revised 1/5/03 * .MODEL ZTX790A PNP IS=1.09684E-12 NF=1.0102 BF=650 IKF=1.7 NK=0.75 +VAF=23.5 ISE=9.88593E-14 NE=1.47256 NR=1.00391 BR=270 IKR=0.2 VAR=30 +ISC=5.4933E-14 NC=1.07427 RB=0.055 RE=0.049 RC=0.078 CJC=96E-12 +MJC=0.495 VJC=0.67 CJE=275E-12 TF=0.75E-9 TR=10.8E-9 XTB=1.4 +TRE1=.0025 TRB1=.0025 TRC1=.0025 * *$ * *ZETEX ZTX790A Spice Model v2.0 Last Revised 1/5/03 * .MODEL ZTX790A PNP IS=1.09684E-12 NF=1.0102 BF=650 IKF=1.7 NK=0.75 +VAF=23.5 ISE=9.88593E-14 NE=1.47256 NR=1.00391 BR=270 IKR=0.2 VAR=30 +ISC=5.4933E-14 NC=1.07427 RB=0.055 RE=0.049 RC=0.078 CJC=96E-12 +MJC=0.495 VJC=0.67 CJE=275E-12 TF=0.75E-9 TR=10.8E-9 XTB=1.4 +TRE1=.0025 TRB1=.0025 TRC1=.0025 * *$ * *ZETEX ZTX849 Spice Model v1.0 Last Revised 20/1/93 * .MODEL ZTX849 NPN IS =5.8591E-13 NF =0.9919 BF =230 IKF=18 VAF=90 + ISE=2.0067E-13 NE =1.4 NR =0.9908 BR =180 IKR=6.8 + VAR=20 ISC=5.3E-13 NC =1.46 RB =0.023 RE =0.0223 + RC =0.015 CJC=200E-12 MJC=0.3006 VJC=0.3532 + CJE=1.21E-9 TF =1.07E-9 TR =9.3E-9 * *$ * *ZETEX ZTX949 Spice Model v1.0 Last Revised 27/5/92 * .MODEL ZTX949 PNP IS=1.5111E-12 NF=1.0127 BF=208 IKF=12.4 VAF=32.7 +ISE=1.335E-13 NE=1.42 NR=1.009 BR=145 IKR=1.25 VAR=26.5 +ISC=1.392E-13 NC=1.14 RB=0.026 RE=0.019 RC=0.0175 CJC=362E-12 +MJC=0.338 VJC=0.4294 CJE=1.17E-9 TF=1.01E-9 TR=7.5E-9 * *$ * *ZETEX ZUMT619 Spice Model v1.0 Last Revised 24/1/03 * .MODEL ZUMT619 NPN IS =2.61E-13 BF =550 IKF=0.99 VAF=84 +ISE=7.17E-14 NE =1.4148 BR =110 IKR=0.63 VAR=51 ISC=2.25E-12 +NC =1.45 RB =0.093 RE =0.073 RC =0.083 CJC=18E-12 MJC=0.371 +VJC=0.435 CJE=97.7E-12 TF =0.78E-9 TR =9E-9 * *$ * *ZETEX ZUMT720 Spice Model v1.0 Last Revised 14/1/03 * .MODEL ZUMT720 PNP IS=2.817E-13 BF=550 IKF=0.63 VAF=28.4 +ISE=4.76E-14 NE=1.492 BR=42 IKR=0.293 VAR=10.21 ISC=2.7E-14 +NC =1.124 RB=0.173 RE=0.171 RC=0.089 CJC=28.5E-12 MJC=0.506 +VJC=0.843 CJE=92E-12 MJE=0.524 VJE=1.021 TF=0.8E-9 TR=20E-9 * *$ * *ZETEX ZX5T3Z Spice Model v1.1 Last Revised 3/6/2004 * .MODEL ZX5T3 PNP IS=2e-12 NF=1 ISE=9e-13 NE=1.55 BF=600 VAF=26 +IKF=2.5 NR=.97 ISC=2e-13 NC=1.4 BR=105 VAR=2.41 IKR=1.5 RE=2e-3 +RB=700e-3 RC=20e-3 CJE=535e-12 CJC=165e-12 TF=0.6e-9 TR=10e-9 +XTB=1.5 * *$ * *ZETEX ZX5T949G Spice Model v1.0 Last Revised 18/03/05 * .MODEL ZX5T949G PNP IS=1.5111E-12 NF=1.0127 BF=208 XTB=1.4 IKF=7.5 +VAF=43.4 ISE=1.335E-13 NE=1.42 NR=1.009 BR=100 IKR=1.3 VAR=9.7 +ISC=1.392E-13 NC=1.22 RB=0.12 RE=0.022 RC=0.004 CJC=246E-12 +MJC=0.338 VJC=0.4294 CJE=796E-12 TF=1.01E-9 TR=5E-9 * *$ * *ZETEX ZXT10N50DE6 Spice Model v1.0 Last Revised 25/11/02 * .MODEL ZXT10N50DE6 NPN IS =5.8032E-13 NF =1.0027 BF =485 IKF=2.2 VAF=84 + ISE=1.5933E-13 NE =1.4148 NR =1.0006 BR =110 IKR=1.4 + VAR=51 ISC=5E-12 NC =1.45 RB =0.042 RE =0.033 + RC =0.0375 CJC=40E-12 MJC=0.3708 VJC=0.4347 CJE=217E-12 + TF =0.78E-9 TR =9E-9 * *$ * *ZETEX ZXT10P40DE6 Spice Model v2.0 Last Revised 1/5/03 * .MODEL ZXT10P40DE6 PNP IS =6.261E-13 BF =500 IKF =1.4 VAF =28.4 +ISE=1.057E-13 NE =1.4923 NR =1.00 BR =42 IKR=0.65 VAR=10.21 +ISC=6E-14 NC =1.124 RB =0.078 RE =0.077 RC =0.04 CJC=59.54E-12 +MJC=0.5058 VJC=0.8427 CJE=201.4E-12 MJE=0.5244 VJE=1.021 +TF =0.68E-9 TR =23.7E-9 NK=0.75 XTB=1.8 TRE1=.0025 TRB1=.0025 +TRC1=.0025 * *$ * *ZETEX ZXT12P40DX Spice Model v1.2 Last revision 7/12/06 * .MODEL ZXT12P40DX PNP IS =8E-13 NF =1 BF =700 IKF=1.2 VAF=22 ISE=6E-14 NE =1.4 +NR =1 BR =35 IKR=1.2 VAR=10 ISC=1.3e-13 NC =1.45 RB =0.025 RE =0.025 RC =0.025 +CJC=123E-12 MJC=0.45 VJC=0.7 CJE=412E-12 MJE=0.45 VJE=0.74 TF =5E-10 TR =30e-9 +XTB=1.6 RCO=0.45 GAMMA=0.8E-9 QUASIMOD=1 * *$ * *ZETEX ZXT13P40DE6 Spice Model v1.0 Last Revised 24/10/07 * .MODEL ZXT13P40DE6 PNP IS=1.6E-12 NF=1 BF=600 VAF=29.9 ISE=1.2E-13 + IKF=4 NE=1.45 BR=48 VAR=6.8 ISC=1.2E-13 NC=1.1 IKR=0.4 RC=0.028 + RB=0.10 RE=0.022 QUASIMOD=1 RCO=0.5 GAMMA=2.5E-9 CJC=155E-12 MJC=0.43 + VJC=0.6 CJE=570E-12 MJE=0.59 VJE=1.1 TF=0.8E-9 TR=18E-9 TRC1=0.005 + TRB1=0.005 TRE1=0.005 XTB=1.4 * *$ * *ZETEX ZXT13P40DE6 Spice Model v1.0 Last Revised 24/10/07 * .MODEL ZXT13P40DE6 PNP IS=1.6E-12 NF=1 BF=600 VAF=29.9 ISE=1.2E-13 + IKF=4 NE=1.45 BR=48 VAR=6.8 ISC=1.2E-13 NC=1.1 IKR=0.4 RC=0.028 + RB=0.10 RE=0.022 QUASIMOD=1 RCO=0.5 GAMMA=2.5E-9 CJC=155E-12 MJC=0.43 + VJC=0.6 CJE=570E-12 MJE=0.59 VJE=1.1 TF=0.8E-9 TR=18E-9 TRC1=0.005 + TRB1=0.005 TRE1=0.005 XTB=1.4 * *$ * *ZETEX ZXT690BK Spice Model v1.0 Last revision 13/07/07 * .MODEL ZXT690BK NPN IS=1.5E-12 NF=1 BF=1000 IKF=3 VAF=60 ISE=4E-13 NE=1.37 +NR=1 BR=123 IKR=1 VAR=14.5 ISC=4E-13 NC=1.34 RB=0.1 RE=0.045 RC=0.027 +CJE=250E-12 VJE=0.68 MJE=0.36 CJC=59E-12 VJC=0.49 MJC=0.36 TF=0.77E-9 +TR=18E-9 RCO=0.93 GAMMA=5E-9 QUASIMOD=1 XTB=1.4 TRE1=0.002 TRB1=0.002 +TRC1=0.002 * *$ * *ZETEX ZXT690BK Spice Model v1.0 Last revision 13/07/07 * .MODEL ZXT690BK NPN IS=1.5E-12 NF=1 BF=1000 IKF=3 VAF=60 ISE=4E-13 NE=1.37 +NR=1 BR=123 IKR=1 VAR=14.5 ISC=4E-13 NC=1.34 RB=0.1 RE=0.045 RC=0.027 +CJE=250E-12 VJE=0.68 MJE=0.36 CJC=59E-12 VJC=0.49 MJC=0.36 TF=0.77E-9 +TR=18E-9 RCO=0.93 GAMMA=5E-9 QUASIMOD=1 XTB=1.4 TRE1=0.002 TRB1=0.002 +TRC1=0.002 * *$ * * *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG *SIMULATOR=PSPICE *DATE=10/11/2009 *VERSION=1 * .MODEL ZXT790AK PNP IS=1.09684E-12 NF=1.0102 BF=650 IKF=1.7 NK=0.75 +VAF=23.5 ISE=9.88593E-14 NE=1.47256 NR=1.00391 BR=270 IKR=0.2 VAR=30 +ISC=5.4933E-14 NC=1.07427 RB=0.055 RE=0.049 RC=0.078 CJC=96E-12 +MJC=0.495 VJC=0.67 CJE=275E-12 TF=0.75E-9 TR=10.8E-9 XTB=1.4 +TRE1=.0025 TRB1=.0025 TRC1=.0025 * *$ * *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG_GM *SIMULATOR=PSPICE *DATE=23FEB2011 *VERSION=1 * .MODEL ZXT849K NPN IS =5.8591E-13 NF =0.9919 BF =230 IKF=18 VAF=90 + ISE=2.0067E-13 NE =1.4 NR =0.9908 BR =180 IKR=6.8 + VAR=20 ISC=5.3E-13 NC =1.46 RB =0.023 RE =0.0223 + RC =0.015 CJC=200E-12 MJC=0.3006 VJC=0.3532 + CJE=1.21E-9 TF =1.07E-9 TR =9.3E-9 * *$ * *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG_GM *SIMULATOR=PSPICE *DATE=10FEB2011 *VERSION=1 *PIN_ORDER * 1=C1 6=E1 * 2=B1 5=B2 * 3=C2 4=E2 * .SUBCKT ZXTC2045E6 1 2 3 4 5 6 Q1 1 2 6 Nmod Q2 3 5 4 Pmod * .MODEL Nmod NPN IS =2.5E-13 NF =1 BF =600 IKF=1 VAF=51 ISE=2E-13 + NE =1.4 NR =1 BR =150 IKR=.5 VAR=25 ISC=1e-13 NC =1.47 RB =0.5 + RE =0.055 RC =0.055 CJC=23E-12 MJC=0.33 VJC=0.75 CJE=98E-12 TF =0.8E-9 + TR =30e-9 .MODEL Pmod PNP IS=2e-13 BF=550 XTB=1.4 NF=1 VAF=21 IKF=0.25 + ISE=1e-13 NE=1.38 BR=55 NR=1 VAR=9.9 IKR=0.25 ISC=1e-13 NC=1.18 + RE=0.06 RB=0.7 RC=0.06 CJE=95.9e-12 VJE=0.897 MJE=0.468 CJC=43.4e-12 + VJC=1.816 MJC=0.85 TF=495e-12 TR=25e-9 .ENDS * *$ * *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG_GM *SIMULATOR=PSPICE *DATE=10FEB2011 *VERSION=1 *PIN_ORDER * 1=C1 6=E1 * 2=B1 5=B2 * 3=C2 4=E2 * .SUBCKT ZXTC2045E6 1 2 3 4 5 6 Q1 1 2 6 Nmod Q2 3 5 4 Pmod * .MODEL Nmod NPN IS =2.5E-13 NF =1 BF =600 IKF=1 VAF=51 ISE=2E-13 + NE =1.4 NR =1 BR =150 IKR=.5 VAR=25 ISC=1e-13 NC =1.47 RB =0.5 + RE =0.055 RC =0.055 CJC=23E-12 MJC=0.33 VJC=0.75 CJE=98E-12 TF =0.8E-9 + TR =30e-9 .MODEL Pmod PNP IS=2e-13 BF=550 XTB=1.4 NF=1 VAF=21 IKF=0.25 + ISE=1e-13 NE=1.38 BR=55 NR=1 VAR=9.9 IKR=0.25 ISC=1e-13 NC=1.18 + RE=0.06 RB=0.7 RC=0.06 CJE=95.9e-12 VJE=0.897 MJE=0.468 CJC=43.4e-12 + VJC=1.816 MJC=0.85 TF=495e-12 TR=25e-9 .ENDS * *$ * *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG_GM *SIMULATOR=PSPICE *DATE=10FEB2011 *VERSION=1 *PIN_ORDER * 1=C1 6=E1 * 2=B1 5=B2 * 3=C2 4=E2 * .SUBCKT ZXTC2063E6 1 2 3 4 5 6 Q1 1 2 6 Nmod Q2 3 5 4 Pmod * .MODEL Nmod NPN IS=5.1E-13 BF=480 NF=1 VAF=99 IKF=3.3 ISE=1.2E-13 +NE=1.49 BR=65 NR=1 VAR=24 IKR=1 ISC=1.1E-13 NC=1.31 RE=0.0115 RB=0.15 RC=0.012 +CJE=192E-12 VJE=0.75 MJE=0.38 CJC=35E-12 VJC=0.47 MJC=0.34 TF=0.62E-9 TR=20E-9 +RCO=1.9 GAMMA=1E-8 QUASIMOD=1 XTB=1.35 TRE1=0.005 TRB1=0.005 TRC1=0.005 .MODEL Pmod PNP IS=4E-13 NF=1 BF=470 IKF=3.5 VAF=23 ISE=10E-14 + NE=1.49 NR=1 BR=97 IKR=1 VAR=4.5 ISC=7.5e-14 NC=1.2 RE=0.014 RB=0.12 + RC=0.0111 RCO=0.88 GAMMA=0.6E-9 CJC=58E-12 MJC=0.41 VJC=0.62 CJE=183E-12 + MJE=0.5 VJE=0.95 TF=3.9E-10 TR=7.8e-9 XTB=1.5 TRE1=0.003 TRB1=0.003 + TRC1=0.003 QUASIMOD=1 .ENDS * *$ * *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG_GM *SIMULATOR=PSPICE *DATE=24JAN2011 *VERSION=2 *PIN_ORDER *1=B1 *2=E1 *3=B2 *4=E2 *5=C2 *6=C2 *7=C1 *8=C1 * .SUBCKT ZXTC4591AMC 1 2 3 4 5 6 7 8 Q1 10 1 2 Nmod Q2 20 3 4 Pmod RP1 10 7 0.001 RP2 10 8 0.001 RP3 20 5 0.001 RP4 20 6 0.001 * .MODEL Nmod NPN IS =3.05E-13 NF =1.0034 BF =650 IKF=0.8 VAF=165 + ISE=8.0191E-14 NE =1.4126 NR =1.001 BR =120 IKR=0.6 VAR=69 + ISC=1.6E-12 NC =1.38 RB =0.065 RE =0.109 RC =0.075 + CJC=17.2E-12 MJC=0.3429 VJC=0.4298 CJE=96E-12 + TF =0.71E-9 TR =2.5E-9 .MODEL Pmod PNP IS =3.0572E-13 NF =1.0103 BF =450 IKF=0.93 + VAF=20 ISE=1.5E-14 NE =1.52 NR =1.007 BR =160 IKR=0.08 VAR=33 + ISC=3.8736E-14 NC =1.0893 RB =0.112 RE =0.144 RC =0.156 + CJC=42E-12 MJC=0.4449 VJC=0.3131 CJE=91E-12 + TF =0.51E-9 TR =3.6E-9 .ENDS * *$ * *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG_GM *SIMULATOR=PSPICE *DATE=24JAN2011 *VERSION=2 *PIN_ORDER *1=B1 *2=E1 *3=B2 *4=E2 *5=C2 *6=C2 *7=C1 *8=C1 * .SUBCKT ZXTC4591AMC 1 2 3 4 5 6 7 8 Q1 10 1 2 Nmod Q2 20 3 4 Pmod RP1 10 7 0.001 RP2 10 8 0.001 RP3 20 5 0.001 RP4 20 6 0.001 * .MODEL Nmod NPN IS =3.05E-13 NF =1.0034 BF =650 IKF=0.8 VAF=165 + ISE=8.0191E-14 NE =1.4126 NR =1.001 BR =120 IKR=0.6 VAR=69 + ISC=1.6E-12 NC =1.38 RB =0.065 RE =0.109 RC =0.075 + CJC=17.2E-12 MJC=0.3429 VJC=0.4298 CJE=96E-12 + TF =0.71E-9 TR =2.5E-9 .MODEL Pmod PNP IS =3.0572E-13 NF =1.0103 BF =450 IKF=0.93 + VAF=20 ISE=1.5E-14 NE =1.52 NR =1.007 BR =160 IKR=0.08 VAR=33 + ISC=3.8736E-14 NC =1.0893 RB =0.112 RE =0.144 RC =0.156 + CJC=42E-12 MJC=0.4449 VJC=0.3131 CJE=91E-12 + TF =0.51E-9 TR =3.6E-9 .ENDS * *$ * *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG_GM *SIMULATOR=PSPICE *DATE=24JAN2011 *VERSION=1 *PIN_ORDER *1=B1 *2=E1 *3=B2 *4=E2 *5=C2 *6=C2 *7=C1 *8=C1 * .SUBCKT ZXTC6719MC 1 2 3 4 5 6 7 8 Q1 10 1 2 Nmod Q2 20 3 4 Pmod RP1 10 7 0.001 RP2 10 8 0.001 RP3 20 5 0.001 RP4 20 6 0.001 * .MODEL Nmod NPN IS=5.8032E-13 NF=1.0027 BF=485 IKF=2.2 VAF=84 + ISE=1.5933E-13 NE=1.4148 NR=1.0006 BR=110 IKR=1.4 + VAR=51 ISC=5E-12 NC=1.45 RB=0.042 RE=0.033 + RC=0.0375 CJC=40E-12 MJC=0.3708 VJC=0.4347 CJE=217E-12 + TF=0.78E-9 TR=9E-9 .MODEL Pmod PNP IS=6.261E-13 BF=500 IKF=1.4 VAF=28.4 + ISE=1.057E-13 NE=1.4923 NR=1.00 BR=42 IKR=0.65 VAR=10.21 + ISC=6E-14 NC=1.124 RB=0.078 RE=0.077 RC=0.04 CJC=59.54E-12 + MJC=0.5058 VJC=0.8427 CJE=201.4E-12 MJE=0.5244 VJE=1.021 + TF=0.68E-9 TR=23.7E-9 NK=0.75 XTB=1.8 TRE1=.0025 TRB1=.0025 + TRC1=.0025 .ENDS * *$ * *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG_GM *SIMULATOR=PSPICE *DATE=08FEB2011 *VERSION=2 *PIN_ORDER * 1=E1 6=C1 * 2=B1 5=B2 * 3=C2 4=E2 * .SUBCKT ZXTD09N50DE6 1 2 3 4 5 6 Q1 6 2 1 Mod1 Q2 3 5 4 Mod1 * .MODEL Mod1 NPN IS=2.61E-13 BF=550 IKF=0.99 VAF=84 + ISE=7.17E-14 NE=1.4148 BR=110 IKR=0.63 VAR=51 ISC=2.25E-12 + NC=1.45 RB=0.093 RE=0.073 RC=0.083 CJC=18E-12 MJC=0.371 + VJC=0.435 CJE=97.7E-12 TF=0.78E-9 TR=9E-9 .ENDS * *$ * *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG_GM *SIMULATOR=PSPICE *DATE=10FEB2011 *VERSION=1 *PIN_ORDER * 1=E1 6=C1 * 2=B1 5=B2 * 3=C2 4=E2 * .SUBCKT ZXTD2090E6 1 2 3 4 5 6 Q1 6 2 1 Mod1 Q2 3 5 4 Mod1 * .MODEL Mod1 NPN IS=2.61E-13 BF=550 IKF=0.99 VAF=84 + ISE=7.17E-14 NE=1.4148 BR=110 IKR=0.63 VAR=51 ISC=2.25E-12 + NC=1.45 RB=0.093 RE=0.073 RC=0.083 CJC=18E-12 MJC=0.371 + VJC=0.435 CJE=97.7E-12 TF=0.78E-9 TR=9E-9 .ENDS * *$ * *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG_GM *SIMULATOR=PSPICE *DATE=24JAN2011 *VERSION=1 *PIN_ORDER *1=B1 *2=E1 *3=B2 *4=E2 *5=C2 *6=C2 *7=C1 *8=C1 * .SUBCKT ZXTD619MC 1 2 3 4 5 6 7 8 Q1 10 1 2 Nmod Q2 20 3 4 Nmod RP1 10 7 0.001 RP2 10 8 0.001 RP3 20 5 0.001 RP4 20 6 0.001 * .MODEL Nmod NPN IS=5.8032E-13 NF=1.0027 BF=485 IKF=2.2 VAF=84 + ISE=1.5933E-13 NE=1.4148 NR=1.0006 BR=110 IKR=1.4 + VAR=51 ISC=5E-12 NC=1.45 RB=0.042 RE=0.033 + RC=0.0375 CJC=40E-12 MJC=0.3708 VJC=0.4347 CJE=217E-12 + TF=0.78E-9 TR=9E-9 .ENDS * *$ * *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG_GM *SIMULATOR=PSPICE *DATE=24JAN2011 *VERSION=1 *PIN_ORDER *1=B1 *2=E1 *3=B2 *4=E2 *5=C2 *6=C2 *7=C1 *8=C1 * .SUBCKT ZXTD720MC 1 2 3 4 5 6 7 8 Q1 10 1 2 Pmod Q2 20 3 4 Pmod RP1 10 7 0.001 RP2 10 8 0.001 RP3 20 5 0.001 RP4 20 6 0.001 * .MODEL Pmod PNP IS=6.261E-13 BF=500 IKF=1.4 VAF=28.4 + ISE=1.057E-13 NE=1.4923 NR=1.00 BR=42 IKR=0.65 VAR=10.21 + ISC=6E-14 NC=1.124 RB=0.078 RE=0.077 RC=0.04 CJC=59.54E-12 + MJC=0.5058 VJC=0.8427 CJE=201.4E-12 MJE=0.5244 VJE=1.021 + TF=0.68E-9 TR=23.7E-9 NK=0.75 XTB=1.8 TRE1=.0025 TRB1=.0025 + TRC1=.0025 .ENDS * *$ *ZETEX ZXTN07045EFF Spice Model v1.0 Last revision 13/07/07 * .MODEL ZXTN07045EFF NPN IS=1.5E-12 NF=1 BF=1160 IKF=4 VAF=60 ISE=4E-13 NE=1.37 +NR=1 BR=123 IKR=1 VAR=14.5 ISC=4E-13 NC=1.34 RB=0.1 RE=0.022 RC=0.015 +CJE=250E-12 VJE=0.68 MJE=0.36 CJC=59E-12 VJC=0.49 MJC=0.36 TF=0.6E-9 +TR=9E-9 RCO=0.75 GAMMA=5E-9 QUASIMOD=1 XTB=1.4 TRE1=0.004 TRB1=0.004 +TRC1=0.004 * *$ * *ZETEX ZXTN19055DZ Spice Model v1.0 Last Revised 10/10/07 * .MODEL ZXTN19055DZ NPN IS=8E-13 NF=1 BF=520 IKF=9 VAF=150 ISE=9E-14 + NE=1.42 NR=1 BR=80 IKR=2.2 VAR=22 ISC=6E-13 NC=1.23 RB=0.14 RE=0.011 + RC=0.011 CJC=67E-12 MJC=0.35 VJC=0.47 CJE=360E-12 MJE=0.38 VJE=0.75 + TF=7E-10 TR=1.7E-8 XTB=1.4 TRC1=.005 TRB1=.005 TRE1=.005 QUASIMOD=1 + RCO=0.8 GAMMA=3.8E-9 * *$ * *ZETEX ZXTN2007G Spice Model v1.0 Last revision 24/03/06 * .MODEL ZXTN2007G NPN IS=1.5E-12 NF=1 BF=210 IKF=8 VAF=100 ISE=7.5E-13 +NE=1.39 NR=1 BR=120 IKR=5 VAR=25 ISC=9E-13 NC=1.37 RC=0.005 TRC1=3e-3 +RB=0.3 TRB1=6e-3 RE=0.024 TRE1=3e-3 CJC=110E-12 MJC=0.44 VJC=0.65 CJE=650E-12 +TF=0.8E-9 TR=9E-9 XTB=1.4 * *$ * *ZETEX ZXTN2007Z Spice Model v1.0 Last revision 24/03/06 * .MODEL ZXTN2007Z NPN IS=1.5E-12 NF=1 BF=210 IKF=8 VAF=100 ISE=7.5E-13 +NE=1.39 NR=1 BR=120 IKR=5 VAR=25 ISC=9E-13 NC=1.37 RC=0.005 TRC1=3e-3 +RB=0.3 TRB1=6e-3 RE=0.024 TRE1=3e-3 CJC=110E-12 MJC=0.44 VJC=0.65 CJE=650E-12 +TF=0.8E-9 TR=9E-9 XTB=1.4 * *$ * *ZETEX ZXTN2031F Spice Model v1.0 Last Revised 01/11/05 * .MODEL ZXTN2031F NPN IS =3E-13 BF =380 VAF=100 IKF=2.5 ISE=1.1E-13 NE =1.37 +BR =100 VAR=28 NR =.972 IKR=0.8 ISC=6.5E-13 NC =1.372 RB =0.2 RE =.015 +RC =.015 CJE=250E-12 TF =1E-9 CJC=50E-12 TR =10E-9 * *$ * *ZETEX ZXTN2040F Spice Model v1.0 Last Revised 10/03/06 * .MODEL ZXTN2040F NPN IS =3.05E-13 NF =1.0034 BF =650 IKF=0.8 VAF=165 +ISE=8.0191E-14 NE =1.4126 NR =1.001 BR =120 IKR=0.6 VAR=69 +ISC=1.6E-12 NC =1.38 RB =0.065 RE =0.109 RC =0.075 +CJC=17.2E-12 MJC=0.3429 VJC=0.4298 CJE=96E-12 +TF =0.71E-9 TR =2.5E-9 * *$ * *ZETEX ZXTN25040DFH Spice Model v1.0 Last revision 01/06/07 * .MODEL ZXTN25040DFH NPN IS=5.1E-13 BF=480 NF=1 VAF=99 IKF=3.3 ISE=1.2E-13 +NE=1.49 BR=65 NR=1 VAR=24 IKR=1 ISC=1.1E-13 NC=1.31 RE=0.0115 RB=0.15 RC=0.012 +CJE=192E-12 VJE=0.75 MJE=0.38 CJC=35E-12 VJC=0.47 MJC=0.34 TF=0.62E-9 TR=20E-9 +RCO=1.9 GAMMA=1E-8 QUASIMOD=1 XTB=1.35 TRE1=0.005 TRB1=0.005 TRC1=0.005 * *$ * *ZETEX ZXTN25040DFL Spice Model v1.0 Last revision 01/06/07 * .MODEL ZXTN25040DFL NPN IS=5.1E-13 BF=480 NF=1 VAF=99 IKF=3.3 ISE=1.2E-13 +NE=1.49 BR=65 NR=1 VAR=24 IKR=1 ISC=1.1E-13 NC=1.31 RE=0.0115 RB=0.15 RC=0.012 +CJE=192E-12 VJE=0.75 MJE=0.38 CJC=35E-12 VJC=0.47 MJC=0.34 TF=0.62E-9 TR=20E-9 +RCO=1.9 GAMMA=1E-8 QUASIMOD=1 XTB=1.35 TRE1=0.005 TRB1=0.005 TRC1=0.005 * *$ * *ZETEX ZXTN25040DZ Spice Model v1.0 Last revision 01/06/07 * .MODEL ZXTN25040DZ NPN IS=5.1E-13 BF=480 NF=1 VAF=99 IKF=3.3 ISE=1.2E-13 +NE=1.49 BR=65 NR=1 VAR=24 IKR=1 ISC=1.1E-13 NC=1.31 RE=0.0115 RB=0.15 RC=0.012 +CJE=192E-12 VJE=0.75 MJE=0.38 CJC=35E-12 VJC=0.47 MJC=0.34 TF=0.62E-9 TR=20E-9 +RCO=1.9 GAMMA=1E-8 QUASIMOD=1 XTB=1.35 TRE1=0.005 TRB1=0.005 TRC1=0.005 * *$ * *ZETEX ZXTN25050DFH Spice Model v1.0 Last Revised 09/10/07 * .MODEL ZXTN25050DFH NPN IS=5E-13 NF=1 BF=520 IKF=5.6 VAF=115 ISE=1.1E-13 + NE=1.38 NR=1 BR=22 IKR=1 VAR=65 ISC=3E-13 NC=1.25 RB=0.2 RE=0.00125 + RC=0.00128 CJC=35.5E-12 MJC=0.32 VJC=0.45 CJE=183E-12 MJE=0.38 VJE=0.75 + TF=5.7E-10 TR=5.3E-8 XTB=1.4 TRC1=.01 TRB1=.01 TRE1=.01 QUASIMOD=1 + RCO=1.7 GAMMA=1.2E-8 * *$ * * *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG_PH *SIMULATOR=PSPICE *DATE=13OCT2019 *VERSION=1 * .MODEL ZXTN4240F NPN + IS=6.8e-13; + BF=500; + NF=1.038; + VAF=100; + IKF=10; + ISE=9e-14; + NE=1.6; + BR=32; + NR=1.04; + VAR=14; + IKR=1; + ISC=1e-14; + NC=1.3; + RE=0.02; + RB=1; + RC=0.032; + CJE=141e-12; + VJE=0.84; + MJE=0.4; + CJC=31e-12; + VJC=0.55 + MJC=0.4 + TF=0.59E-9 + TR=6E-9 + RCO=1.7; + GAMMA=4e-8; + QUASIMOD=1 + XTB=1.25; + TRE1=0.0045; + TRB1=0.0035 + TRC1=0.0045 * * (c) 2019 Diodes Inc * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability = intrinsic base-intrinsic emitter voltage * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL *ZXTN619MA Spice model *SIMULATOR=SIMETRIX *ORIGIN=PH *DATE=09April2019 *VERSION=2 *#SIMETRIX .Model ZXTN619MA NPN ; ## Description ## ## Effect ## ; ## DC Forward Parameters ## + IS = 5.8032E-13 ; transport saturation current Controls Icbo and where hFE falls with high Ic + NF = 1.02 ; forward current emission coefficient + ISE = 1.5933E-13 ; base-emitter leakage saturation current Controls the fall in hFE that occurs at low Ic + NE = 1.4148 ; base-emitter leakage emission coefficient Controls Icbo and where hFE falls with high Ic. Controls the fall in hFE that occurs at low Ic + BF = 465 ; ideal maximum forward beta Controls peak forward hFE + IKF = 8 ; corner for forward-beta high-current roll-off Current where rollof occurs + NK = 0.8 ; high-current roll-off coefficient Slope of roll off + VAF = 84 ; forward Early voltage controls the variation of collector current with voltage when the transistor is operated in its linear region. ; ## DC Reverse Parameters ## + NR = 1.0006 ; reverse current emission coefficient + ISC = 5E-12 ; base-collector leakage saturation current Controls the fall of reverse hFE at low currents + NC = 1.6 ; base-collector leakage emission coefficient Controls the fall of reverse hFE at low currents + BR = 110 ; ideal maximum reverse beta Controls peak reverse hFE + IKR = 1.4 ; corner for reverse-beta high-current roll-off Current where rollof occurs + VAR = 51 ; reverse Early voltage the reverse version of VAF. ; ## DC Rb Parameters ## + RB = 14.5 ; zero-bias (maximum) base resistance + IRB = 8.00E-06 ; current at which Rb falls halfway to RBM + RBM = 0.2 ; minimum base resistance ; ## DC Re Parameters ## + RE = 0.05 ; emitter ohmic resistance ; ## DC Rc Parameters ## + RC = 0.0375 ; collector ohmic resistance ; ## AC base-emitter Parameters ## + CJE= 2.17E-10 ; base-emitter zero-bias p-n capacitance controls Cbe. + VJE = 0.75 ; base-emitter built-in potential + MJE = 0.33 ; base-emitter p-n grading factor ; ## AC base-collector Parameters ## + CJC = 4E-11 ; base-collector zero-bias p-n capacitance control Ccb and how it varies with Vcb. + VJC = 0.4347 ; base-collector built-in potential control Ccb and how it varies with Vcb. + MJC = 0.3708 ; base-collector p-n grading factor control Ccb and how it varies with Vcb. + XCJC = 1 ; fraction of CJC connected internally to Rb ; ## AC substrate Parameters ## + CJS = 0 ; substrate zero-bias p-n capacitance + VJS = 0.75 ; substrate p-n built-in potential + MJS = 0 ; substrate p-n grading factor ; ## AC Transit Time Parameters ## + TF = 780.0E-12 ; ideal forward transit time controls Ft and switching speeds. + XTF = 0 ; transit time bias dependence coefficient + VTF = 1E+20 ; transit time dependency on Vbc + ITF = 0 ; transit time dependency on Ic + PTF = 0 ; excess phase @ 1/(2p·TF)Hz + TR = 9.00E-09 ; ideal reverse transit time controls switching storage times. ; ##Temperature Parameters ## + XTB = 1.3 ; forward and reverse beta temperature coefficient controls temperature effects on hFE. Try 1.6 for NPN, 1.9 for PNP + XTI = 3 ; IS temperature effect exponent controls temperature effects on saturation current + RCO = 0 ; epitaxial region resistance + TRB1 = 0 ; RB temperature coefficient (linear) + TRB2 = 0 ; RB temperature coefficient (quadratic) + TRC1 = 0 ; RC temperature coefficient (linear) + TRC2 = 0 ; RC temperature coefficient (quadratic) + TRE1 = 0 ; RE temperature coefficient (linear) + TRE2 = 0 ; RE temperature coefficient (quadratic) + TRM1 = 0 ; RBM temperature coefficient (linear) + TRM2 = 0 ; RBM temperature coefficient (quadratic) * T_ABS = ; absolute temperature + T_MEASURED = 27 ; measured temperature * T_REL_GLOBAL = ; relative to current temperature + QUASIMOD = 1 ; quasi-saturation model flag for temperature dependence 1= Gamma, RCO, VO temp dependance 0n. 0=off. + CN = 2.42 ; quasi-saturation temperature coefficient for hole mobility defaults NPN 2.42, PNP 2.20 + D = 0.87 ; quasi-saturation temperature coefficient -hole carrier velocity defaults NPN 0.87, PNP 0.52 + FC = 0.5 ; forward-bias depletion capacitor coefficient + EG = 1.11 ; bandgap voltage (barrier height) + GAMMA = 1E-11 ; epitaxial region doping factor + ISS = 0 ; substrate p-n saturation current + NS = 1 ; substrate p-n emission coefficient + QCO = 0 ; epitaxial region charge factor ; ## Flicker Parameters ## + AF = 1 ; flicker noise exponent + KF = 0 ; flicker noise coefficient 0.0 + VG = 1.206 ; quasi-saturation extrapolated bandgap voltage at 0° K + VO = 10 ; carrier mobility knee voltage * (c) 2019 Diodes Inc * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL *ZETEX ZXTP07040DFF Spice Model v1.0 Last Revised 12/10/07 * .MODEL ZXTP07040DFF PNP IS=7.5E-13 NF=1 BF=490 VAF=34 ISE=1.9E-13 + IKF=3 NE=1.49 BR=69 VAR=5.7 ISC=1.3E-13 NC=1.22 RC=0.006 RB=0.1 + RE=0.022 CJC=105E-12 MJC=0.44 VJC=0.65 CJE=299E-12 MJE=0.52 VJE=0.96 + TF=0.47E-9 TR=10E-9 XTB=1.4 TRC1=.005 TRB1=.005 TRE1=.005 RCO=0.58 + GAMMA=6E-10 QUASIMOD=1 * *$ * *ZETEX ZXTP2008G Spice Model v1.0 Last revision 24/03/06 * .MODEL ZXTP2008G PNP IS=1.5111E-12 NF=1.0127 BF=208 XTB=1.4 IKF=7.5 +VAF=43.4 ISE=1.335E-13 NE=1.42 NR=1.009 BR=100 IKR=1.3 VAR=9.7 +ISC=1.392E-13 NC=1.22 RB=0.12 RE=0.022 RC=0.004 CJC=246E-12 +MJC=0.338 VJC=0.4294 CJE=796E-12 TF=1.01E-9 TR=5E-9 * *$ * *ZETEX ZXTP2008Z Spice Model v1.0 Last revision 24/03/06 * .MODEL ZXTP2008Z PNP IS=1.5111E-12 NF=1.0127 BF=208 XTB=1.4 IKF=7.5 +VAF=43.4 ISE=1.335E-13 NE=1.42 NR=1.009 BR=100 IKR=1.3 VAR=9.7 +ISC=1.392E-13 NC=1.22 RB=0.12 RE=0.022 RC=0.004 CJC=246E-12 +MJC=0.338 VJC=0.4294 CJE=796E-12 TF=1.01E-9 TR=5E-9 * *$ * *ZETEX ZXTP2008Z Spice Model v1.0 Last revision 24/03/06 * .MODEL ZXTP2008Z PNP IS=1.5111E-12 NF=1.0127 BF=208 XTB=1.4 IKF=7.5 +VAF=43.4 ISE=1.335E-13 NE=1.42 NR=1.009 BR=100 IKR=1.3 VAR=9.7 +ISC=1.392E-13 NC=1.22 RB=0.12 RE=0.022 RC=0.004 CJC=246E-12 +MJC=0.338 VJC=0.4294 CJE=796E-12 TF=1.01E-9 TR=5E-9 * *$ * *ZETEX ZXTP2009Z Spice Model v1.0 Last Revised 24/03/2006 * .MODEL ZXTP2009Z PNP IS=2e-12 NF=1 ISE=9e-13 NE=1.55 BF=600 VAF=26 +IKF=2.5 NR=.97 ISC=2e-13 NC=1.4 BR=105 VAR=2.41 IKR=1.5 RE=2e-3 +RB=700e-3 RC=20e-3 CJE=535e-12 CJC=165e-12 TF=0.6e-9 TR=10e-9 +XTB=1.5 * *$ * *ZETEX ZXTP2009Z Spice Model v1.0 Last Revised 24/03/2006 * .MODEL ZXTP2009Z PNP IS=2e-12 NF=1 ISE=9e-13 NE=1.55 BF=600 VAF=26 +IKF=2.5 NR=.97 ISC=2e-13 NC=1.4 BR=105 VAR=2.41 IKR=1.5 RE=2e-3 +RB=700e-3 RC=20e-3 CJE=535e-12 CJC=165e-12 TF=0.6e-9 TR=10e-9 +XTB=1.5 * *$ * *ZETEX ZXTP2025F Spice Model v1.0 Last revision 31/03/06 * .MODEL ZXTP2025F PNP IS=6E-13 NF=.996 BF=340 VAF=31 ISE=1.3E-13 IKF=4 +NE=1.7 BR=45 VAR=12 ISC=7E-14 NC=1.7 RC=0.009 RB=.19 RE=0.009 +CJC=130E-12 MJC=0.425 VJC=0.68 CJE=510E-12 MJE=0.4 VJE=0.68 TF=0.75E-9 +TR=11E-9 XTB=1.4 QUASIMOD=1 RCO=0.4 GAMMA=0.5E-9 * *$ * *ZETEX ZXTP2041F Spice Model v1.0 Last Revised 10/03/06 * .MODEL ZXTP2041F PNP IS =3.0572E-13 NF =1.0103 BF =450 IKF=0.93 +VAF=20 ISE=1.5E-14 NE =1.52 NR =1.007 BR =160 IKR=0.08 VAR=33 +ISC=3.8736E-14 NC =1.0893 RB =0.112 RE =0.144 RC =0.156 +CJC=42E-12 MJC=0.4449 VJC=0.3131 CJE=91E-12 +TF =0.51E-9 TR =3.6E-9 * *$ * *ZETEX ZXTP25040DFH Spice Model v1.0 Last revision 25/07/07 * .MODEL ZXTP25040DFH PNP IS=4E-13 NF=1 BF=470 IKF=3.5 VAF=23 ISE=10E-14 +NE=1.49 NR=1 BR=97 IKR=1 VAR=4.5 ISC=7.5e-14 NC=1.2 RE=0.014 RB=0.12 +RC=0.0111 RCO=0.88 GAMMA=0.6E-9 CJC=58E-12 MJC=0.41 VJC=0.62 CJE=183E-12 +MJE=0.5 VJE=0.95 TF=3.9E-10 TR=7.8e-9 XTB=1.5 TRE1=0.003 TRB1=0.003 +TRC1=0.003 QUASIMOD=1 * *$ * *ZETEX ZXTP25040DFL Spice Model v1.0 Last revision 25/07/07 * .MODEL ZXTP25040DFL PNP IS=4E-13 NF=1 BF=470 IKF=3.5 VAF=23 ISE=10E-14 +NE=1.49 NR=1 BR=97 IKR=1 VAR=4.5 ISC=7.5e-14 NC=1.2 RE=0.014 RB=0.12 +RC=0.0111 RCO=0.88 GAMMA=0.6E-9 CJC=58E-12 MJC=0.41 VJC=0.62 CJE=183E-12 +MJE=0.5 VJE=0.95 TF=3.9E-10 TR=7.8e-9 XTB=1.5 TRE1=0.003 TRB1=0.003 +TRC1=0.003 QUASIMOD=1 * *$ * .MODEL ZXTP25040DZ PNP IS=4E-13 NF=1 BF=470 IKF=3.5 VAF=23 ISE=10E-14 + NE=1.49 NR=1 BR=97 IKR=1 VAR=4.5 ISC=7.5e-14 NC=1.2 RE=0.014 RB=0.12 + RC=0.0111 RCO=0.88 GAMMA=0.6E-9 CJC=58E-12 MJC=0.41 VJC=0.62 CJE=183E-12 + MJE=0.5 VJE=0.95 TF=3.9E-10 TR=7.8e-9 XTB=1.5 TRE1=0.003 TRB1=0.003 + TRC1=0.003 QUASIMOD=1 *TITLE=ZXTP5240F *DATE=OCT_2018 *ORIGIN=SH *SIMULATOR=DIODES, SIMETRIX *VERSION=1 .MODEL ZXTP5240F PNP +IS=4E-13 NF=1 BF=650 IKF=1.8 VAF=24 ISE=0.1E-14 +NE=1.49 NR=1 BR=50 IKR=0.6 VAR=4.5 ISC=7.5e-14 NC=1.3 RE=0.014 RB=0.12 +RC=0.0111 RCO=0.95 GAMMA=1E-9 CJC=58E-12 MJC=0.41 VJC=0.62 CJE=183E-12 +MJE=0.5 VJE=0.95 TF=3.9E-10 TR=7.8e-9 XTB=1.4 TRE1=0.003 TRB1=0.003 +TRC1=0.003 QUASIMOD=1 * *$ * * (c) 2013 Diodes Inc * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL * *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG_GM *SIMULATOR=PSPICE *DATE=27JAN2011 *VERSION=1 * .MODEL ZXTP720MA PNP IS=6.261E-13 BF=500 IKF=1.4 VAF=28.4 + ISE=1.057E-13 NE=1.4923 NR=1.00 BR=42 IKR=0.65 VAR=10.21 + ISC=6E-14 NC=1.124 RB=0.078 RE=0.077 RC=0.04 CJC=59.54E-12 + MJC=0.5058 VJC=0.8427 CJE=201.4E-12 MJE=0.5244 VJE=1.021 + TF=0.68E-9 TR=23.7E-9 NK=0.75 XTB=1.8 TRE1=.0025 TRB1=.0025 + TRC1=.0025 * *$