* DIODES INCORPORATED AND ITS AFFILIATED COMPANIES AND SUBSIDIARIES (COLLECTIVELY, "DIODES") 
* PROVIDE THESE SPICE MODELS AND DATA (COLLECTIVELY, THE "SM DATA") "AS IS" AND WITHOUT ANY 
* REPRESENTATIONS OR WARRANTIES, EXPRESS OR IMPLIED, INCLUDING ANY WARRANTY OF MERCHANTABILITY 
* OR FITNESS FOR A PARTICULAR PURPOSE, ANY WARRANTY ARISING FROM COURSE OF DEALING OR COURSE OF 
* PERFORMANCE, OR ANY WARRANTY THAT ACCESS TO OR OPERATION OF THE SM DATA WILL BE UNINTERRUPTED, 
* OR THAT THE SM DATA OR ANY SIMULATION USING THE SM DATA WILL BE ERROR FREE. TO THE MAXIMUM 
* EXTENT PERMITTED BY LAW, IN NO EVENT WILL DIODES BE LIABLE FOR ANY DIRECT OR INDIRECT, 
* SPECIAL, INCIDENTAL, PUNITIVE OR CONSEQUENTIAL DAMAGES ARISING OUT OF OR IN CONNECTION WITH 
* THE PRODUCTION OR USE OF SM DATA, HOWEVER CAUSED AND UNDER WHATEVER CAUSE OF ACTION OR THEORY 
* OF LIABILITY BROUGHT (INCLUDING, WITHOUT LIMITATION, UNDER ANY CONTRACT, NEGLIGENCE OR OTHER 
* TORT THEORY OF LIABILITY), EVEN IF DIODES HAS BEEN ADVISED OF THE POSSIBILITY OF SUCH DAMAGES, 
* AND DIODES' TOTAL LIABILITY (WHETHER IN CONTRACT, TORT OR OTHERWISE) WITH REGARD TO THE SM 
* DATA WILL NOT, IN THE AGGREGATE, EXCEED ANY SUMS PAID BY YOU TO DIODES FOR THE SM DATA.


*DATE=21MAR2023
*VERSION=1.1

.subckt dgd0211C VCC GND IN INB OUT
V0 GND COM 0
R1 11 VCC 1m
R2 N006 COM 1m
R3 13 INB 1m
C2 15 N006 3.5p
S2 18 N001 15 N006 SMODswP
S5 N006 15 11 N006 SMODvccuv
R24 13 N006 1000k
S19 N006 N008 14 N006 SMODsw
D10 COM VCC DMOD
M2 N007 20 N009 N006 NFET l=1u w=105u m=50
M1 N003 18 N005 11 PFET l=1u w=116u m=100
R4 12 IN 1m
R5 11 12 1000k
V1 N002 N006 2
S4 N006 14 13 N006 SMODI
S6 N006 14 12 N006 SMODIB
R7 N002 14 100k
R6 15 N002 13.35k
S1 N006 20 15 N006 SMODswN
Elo N001 N006 11 N006 1.1
R9 18 N006 1.46k
R12 N001 20 4.2k
C1 18 N006 3.5p
C3 20 N006 3.5p
R11 15 N008 18k
R8 11 N003 1.053
R13 N009 N006 1.11
S3 N006 N010 N009 N006 SMODsc
S7 N004 11 11 N003 SMODsc
R14 N004 18 1
R15 20 N010 1
R16 11 N006 312k
R17 N005 OUT 1.9
R18 OUT N007 0.96
.MODEL SMODIB SW(Ron=10Meg Roff=1m Vt=1.45 Vh=0.15)
.MODEL NFET NMOS (LEVEL=3 TOX=200E-10 NSUB=1E17 GAMMA=0.5 PHI=0.7 VTO=0.8 DELTA=3.0 UO=650 ETA=3.0E-6 THETA =0.1
+ KP=120E-6 VMAX=1E5 KAPPA=0.3 RSH=0 NFS=1E12 TPG=1 XJ=500E-9 LD=100E-9 CGDO=200E-12 CGSO=200E-12 CGBO=1E-10
+ CJ=400E-6 PB=1 MJ= 0.5 CJSW=300E-12 MJSW=0.5)
.MODEL SMODswP SW(Ron=1m Roff=10Meg Vt=1.5 Vh=0.01)
.MODEL SMODswN SW(Ron=1Meg Roff=1m Vt=1.5 Vh=0.01)
.MODEL DMOD D(BV=24)
.MODEL SMODvccuv SW(Ron=10Meg Roff=1m Vt=4.625 Vh=0.125)
.MODEL SMODI SW(Ron=1m Roff=10Meg Vt=1.45 Vh=0.15)
.MODEL SMODsw SW(Ron=1m Roff=10Meg Vt=1 Vh=0.01)
.MODEL PFET PMOS (LEVEL=3 TOX=200E-10 NSUB=1E17 GAMMA=0.6 PHI=0.7 VTO=-0.9 DELTA=0.1 UO=250 ETA=0 THETA=0.1
+ KP=40E-6 VMAX=5E4 KAPPA=1 RSH=0 NFS=1E12 TPG=-1 XJ=500E-9 LD=100E-9 CGDO=200E-12 CGSO=200E-12 CGBO=1E-10
+ CJ=400E-6 PB=1 MJ=0.5 CJSW=300E-12 MJSW=0.5)
.MODEL SMODsc SW(Ron=1m Roff=10Meg Vt=2 Vh=0.0001)

.ends dgd0211C

******************************************************************************
*                	 (c)  2023 Diodes Inc
*
*   Diodes Incorporated and its affiliated companies and subsidiaries 
*   (collectively, "Diodes") provide these spice models and data 
*   (collectively, the "SM data") "as is" and without any representations
*   or warranties, express or implied, including any warranty of
*   merchantability or fitness for a particular purpose, any warranty 
*   arising from course of dealing or course of performance, or any 
*   warranty that access to or operation of the SM data will be
*   uninterrupted, or that the SM data or any simulation using the SM data
*   will be error free.
*
*   To the maximum extent permitted by law, in no event will Diodes be
*   liable for any indirect, special, incidental, punitive or consequential
*   damages arising out of or in connection with the production or use of
*   SM data, however caused and under whatever cause of action or theory of
*   liability brought (including, without limitation, under any contract,
*   negligence or other tort theory of liability), even if Diodes has been
*   advised of the possibility of such damages, and Diodes' total liability
*   (whether in contract, tort or otherwise) with regard to the SM data
*   will not, in the aggregate, exceed any sums paid by you to Diodes for
*   the SM data
*
*   Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton,
*   Oldham, United Kingdom, OL9 9LL
******************************************************************************


*DATE=02JUN2020
*VERSION=1.0

.subckt dgd0211C VCC GND IN INB OUT
V0 GND COM 0
R1 11 VCC 1m
R2 N006 COM 1m
R3 13 INB 1m
C2 15 N006 3.5p
S2 18 N001 15 N006 SMODswP
S5 N006 15 11 N006 SMODvccuv
R24 13 N006 1000k
S19 N006 N008 14 N006 SMODsw
D10 COM VCC DMOD
M2 N007 20 N009 N006 NFET l=1u w=105u m=50
M1 N003 18 N005 11 PFET l=1u w=116u m=100
R4 12 IN 1m
R5 11 12 2000k
V1 N002 N006 2
S4 N006 14 13 N006 SMODI
S6 N006 14 12 N006 SMODIB
R7 N002 14 100k
R6 15 N002 13.35k
S1 N006 20 15 N006 SMODswN
Elo N001 N006 11 N006 1.1
R9 18 N006 1.46k
R12 N001 20 4.2k
C1 18 N006 3.5p
C3 20 N006 3.5p
R11 15 N008 18k
R8 11 N003 1.053
R13 N009 N006 1.11
S3 N006 N010 N009 N006 SMODsc
S7 N004 11 11 N003 SMODsc
R14 N004 18 1
R15 20 N010 1
R16 11 N006 312k
R17 N005 OUT 1.9
R18 OUT N007 0.96
.MODEL SMODIB SW(Ron=10Meg Roff=1m Vt=1.45 Vh=0.15)
.MODEL NFET NMOS (LEVEL=3 TOX=200E-10 NSUB=1E17 GAMMA=0.5 PHI=0.7 VTO=0.8 DELTA=3.0 UO=650 ETA=3.0E-6 THETA =0.1
+ KP=120E-6 VMAX=1E5 KAPPA=0.3 RSH=0 NFS=1E12 TPG=1 XJ=500E-9 LD=100E-9 CGDO=200E-12 CGSO=200E-12 CGBO=1E-10
+ CJ=400E-6 PB=1 MJ= 0.5 CJSW=300E-12 MJSW=0.5)
.MODEL SMODswP SW(Ron=1m Roff=10Meg Vt=1.5 Vh=0.01)
.MODEL SMODswN SW(Ron=1Meg Roff=1m Vt=1.5 Vh=0.01)
.MODEL DMOD D(BV=24)
.MODEL SMODvccuv SW(Ron=10Meg Roff=1m Vt=4.625 Vh=0.125)
.MODEL SMODI SW(Ron=1m Roff=10Meg Vt=1.45 Vh=0.15)
.MODEL SMODsw SW(Ron=1m Roff=10Meg Vt=1 Vh=0.01)
.MODEL PFET PMOS (LEVEL=3 TOX=200E-10 NSUB=1E17 GAMMA=0.6 PHI=0.7 VTO=-0.9 DELTA=0.1 UO=250 ETA=0 THETA=0.1
+ KP=40E-6 VMAX=5E4 KAPPA=1 RSH=0 NFS=1E12 TPG=-1 XJ=500E-9 LD=100E-9 CGDO=200E-12 CGSO=200E-12 CGBO=1E-10
+ CJ=400E-6 PB=1 MJ=0.5 CJSW=300E-12 MJSW=0.5)
.MODEL SMODsc SW(Ron=1m Roff=10Meg Vt=2 Vh=0.0001)
.ends dgd0211C

******************************************************************************
*                (c)  2020 Diodes Inc						
*						
*   The copyright in these models  and  the designs embodied belong
*   to Diodes Incorporated (" Zetex ").  They  are  supplied
*   free of charge by Zetex for the purpose of research and design
*   and may be used or copied intact  (including this notice)  for
*   that purpose only.  All other rights are reserved.  The models
*   are believed accurate but no condition  or warranty  as to their
*   merchantability or fitness for purpose is given and no liability
*   in respect of any use is accepted by Diodes Incorporated, its distributors
*   or agents.						
*						
*   Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton,
*   Oldham, United Kingdom, OL9 9LL
******************************************************************************


*DATE=21Mar2023
*VERSION=1.1

.subckt dgd0215 INB COM IN OUT VCC
R1 11 VCC 1m
R2 N006 COM 1m
R3 13 IN 1m
C2 15 N006 3.5p
S2 18 N001 15 N006 SMODswP
S5 N006 15 11 N006 SMODvccuv
R24 13 N006 1000k
S19 N006 N008 14 N006 SMODsw
D10 COM VCC DMOD
M2 N007 20 N009 N006 NFET l=1u w=105u m=50
M1 N003 18 N005 11 PFET l=1u w=116u m=100
R4 12 INB 1m
R5 11 12 1000k
V1 N002 N006 2
S4 N006 14 13 N006 SMODI
S6 N006 14 12 N006 SMODIB
R7 N002 14 100k
R6 15 N002 13.35k
S1 N006 20 15 N006 SMODswN
Elo N001 N006 11 N006 1.1
R9 18 N006 1.46k
R12 N001 20 4.2k
C1 18 N006 3.5p
C3 20 N006 3.5p
R11 15 N008 18k
R8 11 N003 1.053
R13 N009 N006 1.11
S3 N006 N010 N009 N006 SMODsc
S7 N004 11 11 N003 SMODsc
R14 N004 18 1
R15 20 N010 1
R16 11 N006 312k
R17 N005 OUT 1.9
R18 OUT N007 0.96
.MODEL SMODIB SW(Ron=10Meg Roff=1m Vt=1.45 Vh=0.15)
.MODEL NFET NMOS (LEVEL=3 TOX=200E-10 NSUB=1E17 GAMMA=0.5 PHI=0.7 VTO=0.8 DELTA=3.0 UO=650 ETA=3.0E-6 THETA =0.1
+ KP=120E-6 VMAX=1E5 KAPPA=0.3 RSH=0 NFS=1E12 TPG=1 XJ=500E-9 LD=100E-9 CGDO=200E-12 CGSO=200E-12 CGBO=1E-10
+ CJ=400E-6 PB=1 MJ= 0.5 CJSW=300E-12 MJSW=0.5)
.MODEL SMODswP SW(Ron=1m Roff=10Meg Vt=1.5 Vh=0.01)
.MODEL SMODswN SW(Ron=1Meg Roff=1m Vt=1.5 Vh=0.01)
.MODEL DMOD D(BV=24)
.MODEL SMODvccuv SW(Ron=10Meg Roff=1m Vt=4.625 Vh=0.125)
.MODEL SMODI SW(Ron=1m Roff=10Meg Vt=1.45 Vh=0.15)
.MODEL SMODsw SW(Ron=1m Roff=10Meg Vt=1 Vh=0.01)
.MODEL PFET PMOS (LEVEL=3 TOX=200E-10 NSUB=1E17 GAMMA=0.6 PHI=0.7 VTO=-0.9 DELTA=0.1 UO=250 ETA=0 THETA=0.1
+ KP=40E-6 VMAX=5E4 KAPPA=1 RSH=0 NFS=1E12 TPG=-1 XJ=500E-9 LD=100E-9 CGDO=200E-12 CGSO=200E-12 CGBO=1E-10
+ CJ=400E-6 PB=1 MJ=0.5 CJSW=300E-12 MJSW=0.5)
.MODEL SMODsc SW(Ron=1m Roff=10Meg Vt=2 Vh=0.0001)

.ends dgd0215

******************************************************************************
*                	 (c)  2023 Diodes Inc
*
*   Diodes Incorporated and its affiliated companies and subsidiaries 
*   (collectively, "Diodes") provide these spice models and data 
*   (collectively, the "SM data") "as is" and without any representations
*   or warranties, express or implied, including any warranty of
*   merchantability or fitness for a particular purpose, any warranty 
*   arising from course of dealing or course of performance, or any 
*   warranty that access to or operation of the SM data will be
*   uninterrupted, or that the SM data or any simulation using the SM data
*   will be error free.
*
*   To the maximum extent permitted by law, in no event will Diodes be
*   liable for any indirect, special, incidental, punitive or consequential
*   damages arising out of or in connection with the production or use of
*   SM data, however caused and under whatever cause of action or theory of
*   liability brought (including, without limitation, under any contract,
*   negligence or other tort theory of liability), even if Diodes has been
*   advised of the possibility of such damages, and Diodes' total liability
*   (whether in contract, tort or otherwise) with regard to the SM data
*   will not, in the aggregate, exceed any sums paid by you to Diodes for
*   the SM data
*
*   Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton,
*   Oldham, United Kingdom, OL9 9LL
******************************************************************************


*DATE=21MAR2023
*VERSION=1.1

.subckt dgd0216 INB COM IN OUT VCC
R1 11 VCC 1m
R2 N006 COM 1m
R3 13 IN 1m
C2 15 N006 3.5p
S2 18 N001 15 N006 SMODswP
S5 N006 15 11 N006 SMODvccuv
R24 13 N006 1000k
S19 N006 N008 14 N006 SMODsw
D10 COM VCC DMOD
M2 N007 20 N009 N006 NFET l=1u w=105u m=50
M1 N003 18 N005 11 PFET l=1u w=116u m=100
R4 12 INB 1m
R5 11 12 1000k
V1 N002 N006 2
S4 N006 14 13 N006 SMODI
S6 N006 14 12 N006 SMODIB
R7 N002 14 100k
R6 15 N002 13.35k
S1 N006 20 15 N006 SMODswN
Elo N001 N006 11 N006 1.1
R9 18 N006 1.46k
R12 N001 20 4.2k
C1 18 N006 3.5p
C3 20 N006 3.5p
R11 15 N008 18k
R8 11 N003 1.053
R13 N009 N006 1.11
S3 N006 N010 N009 N006 SMODsc
S7 N004 11 11 N003 SMODsc
R14 N004 18 1
R15 20 N010 1
R16 11 N006 312k
R17 N005 OUT 1.9
R18 OUT N007 0.96
.MODEL SMODIB SW(Ron=10Meg Roff=1m Vt=1.45 Vh=0.15)
.MODEL NFET NMOS (LEVEL=3 TOX=200E-10 NSUB=1E17 GAMMA=0.5 PHI=0.7 VTO=0.8 DELTA=3.0 UO=650 ETA=3.0E-6 THETA =0.1
+ KP=120E-6 VMAX=1E5 KAPPA=0.3 RSH=0 NFS=1E12 TPG=1 XJ=500E-9 LD=100E-9 CGDO=200E-12 CGSO=200E-12 CGBO=1E-10
+ CJ=400E-6 PB=1 MJ= 0.5 CJSW=300E-12 MJSW=0.5)
.MODEL SMODswP SW(Ron=1m Roff=10Meg Vt=1.5 Vh=0.01)
.MODEL SMODswN SW(Ron=1Meg Roff=1m Vt=1.5 Vh=0.01)
.MODEL DMOD D(BV=24)
.MODEL SMODvccuv SW(Ron=10Meg Roff=1m Vt=4.625 Vh=0.125)
.MODEL SMODI SW(Ron=1m Roff=10Meg Vt=1.45 Vh=0.15)
.MODEL SMODsw SW(Ron=1Meg Roff=1m Vt=1 Vh=0.01)
.MODEL PFET PMOS (LEVEL=3 TOX=200E-10 NSUB=1E17 GAMMA=0.6 PHI=0.7 VTO=-0.9 DELTA=0.1 UO=250 ETA=0 THETA=0.1
+ KP=40E-6 VMAX=5E4 KAPPA=1 RSH=0 NFS=1E12 TPG=-1 XJ=500E-9 LD=100E-9 CGDO=200E-12 CGSO=200E-12 CGBO=1E-10
+ CJ=400E-6 PB=1 MJ=0.5 CJSW=300E-12 MJSW=0.5)
.MODEL SMODsc SW(Ron=1m Roff=10Meg Vt=2 Vh=0.0001)

.ends dgd0216

******************************************************************************
*                	 (c)  2023 Diodes Inc
*
*   Diodes Incorporated and its affiliated companies and subsidiaries 
*   (collectively, "Diodes") provide these spice models and data 
*   (collectively, the "SM data") "as is" and without any representations
*   or warranties, express or implied, including any warranty of
*   merchantability or fitness for a particular purpose, any warranty 
*   arising from course of dealing or course of performance, or any 
*   warranty that access to or operation of the SM data will be
*   uninterrupted, or that the SM data or any simulation using the SM data
*   will be error free.
*
*   To the maximum extent permitted by law, in no event will Diodes be
*   liable for any indirect, special, incidental, punitive or consequential
*   damages arising out of or in connection with the production or use of
*   SM data, however caused and under whatever cause of action or theory of
*   liability brought (including, without limitation, under any contract,
*   negligence or other tort theory of liability), even if Diodes has been
*   advised of the possibility of such damages, and Diodes' total liability
*   (whether in contract, tort or otherwise) with regard to the SM data
*   will not, in the aggregate, exceed any sums paid by you to Diodes for
*   the SM data
*
*   Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton,
*   Oldham, United Kingdom, OL9 9LL
******************************************************************************


*DATE=22FEB2024
*VERSION=1.0

* block symbol definitions
.subckt dgd0227 NC INA COM INB OUTB VCC OUTA NC1
C1 dlyoutl COM 20p
S1 drvlp illp dlyoutl COM SRSTP
S2 illn drvln dlyoutl COM SRSTN
R1 drvlp OUTA 1.4 tol=1.1
R2 drvln OUTA 1.2 tol=1
C2 OUTA COM 5.9n
D1 COM OUTA DMOD
D2 OUTA VCC DMOD
E1 bias6 COM OUTA drvln 1
R3 bias6 dlyln 10k
C3 dlyln COM 10p
E2 bias7 COM drvlp OUTA 1
R4 bias7 dlylp 10k
C4 dlylp COM 10p
S3 illp VCC dlylp COM SILIMP
S4 COM illn dlyln COM SILIMN
S5 COM linst INA COM SDIN
R5 INA COM 950k
D3 COM INA DMOD
D4 INA VCC DMOD
E3 bias1 COM VCC COM 1
R6 bias1 ldelayu {RUdelay}
C5 ldelayu COM {CUdelay}
XX1 linst ldelay VCC ideal_inverter
D5 COM VCC DMOD
R7 VCC COM 550k
S6 COM ldelayu ldelay COM SLIN
R8 bias1 linst {RDdelay}
C6 linst COM {CDdelay}
C7 N003 COM 10p
S7 COM N003 VCC COM SUVCC
R9 N003 bias1 1k
XX2 ldelayu N001 VCC ideal_inverter
C8 dlyoutlb COM 20p
S8 drvlpb illpb dlyoutlb COM SRSTP
S9 illnb drvlnb dlyoutlb COM SRSTN
R10 drvlpb OUTB 1.4 tol=1.1
R11 drvlnb OUTB 1.2 tol=1
C9 OUTB COM 5.9n
D6 COM OUTB DMOD
D7 OUTB VCC DMOD
E4 bias9 COM OUTB drvlnb 1
R12 bias9 dlylnb 10k
C10 dlylnb COM 10p
E5 bias8 COM drvlpb OUTB 1
R13 bias8 dlylpb 10k
C11 dlylpb COM 10p
S10 illpb VCC dlylpb COM SILIMP
S11 COM illnb dlylnb COM SILIMN
S12 COM linstb INB COM SDIN
R14 INB COM 950k
D8 COM INB DMOD
D9 INB VCC DMOD
E6 bias2 COM VCC COM 1
R15 bias2 ldelayub {RUdelay}
C12 ldelayub COM {CUdelay}
XX4 linstb ldelayb VCC ideal_inverter
S13 COM ldelayub ldelayb COM SLIN
R16 bias2 linstb {RDdelay}
C13 linstb COM {CDdelay}
C14 N006 COM 10p
S14 COM N006 VCC COM SUVCC
R17 N006 bias2 1k
XX5 ldelayub N004 VCC ideal_inverter
XX3 N001 N002 dlyoutl VCC ideal_nor_2
XX7 N003 N002 VCC ideal_inverter
XX6 N004 N005 dlyoutlb VCC ideal_nor_2
XX8 N006 N005 VCC ideal_inverter
.MODEL DMOD D(IS=1.0e-14 RS=0.01 N=1 EG=1.11 XTI=3 BV=25 IBV=10u CJO=0 VJ=0.75 M=0.333 FC=0.5 TT=0 KF=0 AF=1)
.MODEL SRSTN SW(Ron=10Meg Roff=1m Vt=1.5 Vh=1.2)
.MODEL SRSTP SW(Ron=1m Roff=10Meg Vt=1.5 Vh=1.2)
.MODEL SLIN SW(Ron=10Meg Roff=1m Vt=1.5 Vh=0.15)
.MODEL SILIMN SW(Ron=2.3 Roff=1m Vt=4.8 Vh=0.01)
.MODEL SILIMP SW(Ron=2.1 Roff=1m Vt=5.6 Vh=0.01)
.MODEL SDIN SW(Ron=1m Roff=100Meg Vt=1.5 Vh=0.15)
.param CUdelay=10p RUdelay=5.7k CDdelay=10p RDdelay=4.9k
.MODEL SUVCC SW(Ron=10Meg Roff=1m Vt=3.25 Vh=0.05)
.ends dgd0227

.subckt ideal_inverter A Y Vdd
S3 Y Vdd N001 A switmod
S4 0 Y A N001 switmod
E1 N001 0 Vdd 0 0.5
C1 Y 0 10p
.model switmod SW(Ron=1m Roff=10Meg Vt=0 Vh=0.00001)
.ends ideal_inverter

.subckt ideal_nor_2 A B Y Vdd
S1 Y N001 Vtrip A switmod
S2 0 Y A Vtrip switmod
E1 Vtrip 0 Vdd 0 0.5
S3 N001 Vdd Vtrip B switmod
S5 0 Y B Vtrip switmod
C1 Y 0 10p
.model switmod SW(Ron=1m Roff=10Meg Vt=0 Vh=0.00001)
.ends ideal_nor_2

******************************************************************************
*                	 (c)  2024 Diodes Inc
*
*   Diodes Incorporated and its affiliated companies and subsidiaries 
*   (collectively, "Diodes") provide these spice models and data 
*   (collectively, the "SM data") "as is" and without any representations
*   or warranties, express or implied, including any warranty of
*   merchantability or fitness for a particular purpose, any warranty 
*   arising from course of dealing or course of performance, or any 
*   warranty that access to or operation of the SM data will be
*   uninterrupted, or that the SM data or any simulation using the SM data
*   will be error free.
*
*   To the maximum extent permitted by law, in no event will Diodes be
*   liable for any indirect, special, incidental, punitive or consequential
*   damages arising out of or in connection with the production or use of
*   SM data, however caused and under whatever cause of action or theory of
*   liability brought (including, without limitation, under any contract,
*   negligence or other tort theory of liability), even if Diodes has been
*   advised of the possibility of such damages, and Diodes' total liability
*   (whether in contract, tort or otherwise) with regard to the SM data
*   will not, in the aggregate, exceed any sums paid by you to Diodes for
*   the SM data
*
*   Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton,
*   Oldham, United Kingdom, OL9 9LL
******************************************************************************