* DIODES INCORPORATED AND ITS AFFILIATED COMPANIES AND SUBSIDIARIES (COLLECTIVELY, "DIODES") 
* PROVIDE THESE SPICE MODELS AND DATA (COLLECTIVELY, THE "SM DATA") "AS IS" AND WITHOUT ANY 
* REPRESENTATIONS OR WARRANTIES, EXPRESS OR IMPLIED, INCLUDING ANY WARRANTY OF MERCHANTABILITY 
* OR FITNESS FOR A PARTICULAR PURPOSE, ANY WARRANTY ARISING FROM COURSE OF DEALING OR COURSE OF 
* PERFORMANCE, OR ANY WARRANTY THAT ACCESS TO OR OPERATION OF THE SM DATA WILL BE UNINTERRUPTED, 
* OR THAT THE SM DATA OR ANY SIMULATION USING THE SM DATA WILL BE ERROR FREE. TO THE MAXIMUM 
* EXTENT PERMITTED BY LAW, IN NO EVENT WILL DIODES BE LIABLE FOR ANY DIRECT OR INDIRECT, 
* SPECIAL, INCIDENTAL, PUNITIVE OR CONSEQUENTIAL DAMAGES ARISING OUT OF OR IN CONNECTION WITH 
* THE PRODUCTION OR USE OF SM DATA, HOWEVER CAUSED AND UNDER WHATEVER CAUSE OF ACTION OR THEORY 
* OF LIABILITY BROUGHT (INCLUDING, WITHOUT LIMITATION, UNDER ANY CONTRACT, NEGLIGENCE OR OTHER 
* TORT THEORY OF LIABILITY), EVEN IF DIODES HAS BEEN ADVISED OF THE POSSIBILITY OF SUCH DAMAGES, 
* AND DIODES' TOTAL LIABILITY (WHETHER IN CONTRACT, TORT OR OTHERWISE) WITH REGARD TO THE SM 
* DATA WILL NOT, IN THE AGGREGATE, EXCEED ANY SUMS PAID BY YOU TO DIODES FOR THE SM DATA.


*SRC=DRDN005W;DI_DRDN005W_NPN;BJTs NPN; Si;  80.0V  0.500A  219MHz   Diodes Inc. Transistor 
.MODEL DI_DRDN005W_NPN  NPN (IS=50.8f NF=1.00 BF=479 VAF=161 
+ IKF=91.1m ISE=9.99p NE=2.00 BR=4.00 NR=1.00 
+ VAR=16.0 IKR=0.225 RE=0.103 RB=0.412 RC=41.2m 
+ XTB=1.5 CJE=58.7p VJE=1.10 MJE=0.500 CJC=18.9p VJC=0.300 
+ MJC=0.300 TF=576p TR=110n EG=1.12 )

*SRC=DRDN005W;DI_DRDN005W_DIODE;Diodes;Si;  75.0V  0.250A  4.00ns   Diodes Inc. Switching Diode
.MODEL DI_DRDN005W_DIODE D  ( IS=300n RS=0.422 BV=75.0 IBV=2.50u
+ CJO=1.99p  M=0.333 N=2.77 TT=5.76n )


*SRC=DRDN010W;DI_DRDN010W_NPN;BJTs NPN; Si;  18.0V  1.00A  100MHz   Diodes Inc. BJTs
.MODEL DI_DRDN010W_NPN  NPN (IS=102f NF=1.00 BF=1.09k VAF=76.4
+ IKF=0.425 ISE=13.4p NE=2.00 BR=4.00 NR=1.00
+ VAR=20.0 IKR=1.05 RE=0.181 RB=0.726 RC=72.6m
+ XTB=1.5 CJE=71.7p VJE=1.10 MJE=0.500 CJC=23.1p VJC=0.300 MJC=0.300 
+ TF=1.55n TR=238n EG=1.12 )

*SRC=DRDN010W;DI_DRDN010W_DIODE;Diodes;Si;  75.0V  0.250A  4.00ns   Diodes Inc. Switching Diode
.MODEL DI_DRDN010W_DIODE D  ( IS=300n RS=0.422 BV=75.0 IBV=2.50u
+ CJO=1.99p  M=0.333 N=2.77 TT=5.76n )


*SRC=DRDNB16W;DI_DRDNB16W_NPN;BJTs NPN; Si;  32.0V  0.500A  220MHz   Diodes Inc. PBTs
.MODEL DI_DRDNB16W_NPN  NPN (IS=50.6f NF=1.00 BF=534 VAF=102
+ IKF=0.340 ISE=17.3p NE=2.00 BR=4.00 NR=1.00
+ VAR=20.0 IKR=0.840 RE=0.283 RB=1.13 RC=0.113
+ XTB=1.5 CJE=55.3p VJE=1.10 MJE=0.500 CJC=21.3p VJC=0.300
+ MJC=0.300 TF=605p TR=120n EG=1.12 )

*SRC=DRDNB16W;DI_DRDNB16W_DIODE;Diodes;Si;  75.0V  0.250A  4.00ns   Diodes Inc. Switching Diode
.MODEL DI_DRDNB16W_DIODE D  ( IS=300n RS=0.422 BV=75.0 IBV=2.50u
+ CJO=1.99p  M=0.333 N=2.77 TT=5.76n )


Note:  The following SPICE model is for the individual elements of this device.
When applying this SPICE model to your circuit simulation be certain to 
add R1 and R2 values per the table found on the data sheet for the pre-biased
transistor elements. 
Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.

*SRC=DRDNB21D;DI_DRDNB21D_NPN;BJTs NPN; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs
.MODEL DI_DRDNB21D_NPN  NPN (IS=9.98f NF=1.00 BF=766 VAF=127
+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
+ MJC=0.300 TF=567p TR=119n EG=1.12 )

*SRC=DRDNB21D;DI_DRDNB21D_DIODE;Diodes;Si;  75.0V  0.250A  4.00ns   Diodes Inc. Switching Diode
.MODEL DI_DRDNB21D_DIODE D  ( IS=300n RS=0.422 BV=75.0 IBV=2.50u
+ CJO=1.99p  M=0.333 N=2.77 TT=5.76n )


*SRC=DRDNB26W;DI_DRDNB26W_NPN;BJTs NPN; Si;  32.0V  0.500A  220MHz   Diodes Inc. PBTs
.MODEL DI_DRDNB26W_NPN  NPN (IS=50.6f NF=1.00 BF=534 VAF=102
+ IKF=0.340 ISE=17.3p NE=2.00 BR=4.00 NR=1.00
+ VAR=20.0 IKR=0.840 RE=0.283 RB=1.13 RC=0.113
+ XTB=1.5 CJE=55.3p VJE=1.10 MJE=0.500 CJC=21.3p VJC=0.300
+ MJC=0.300 TF=605p TR=120n EG=1.12 )

*SRC=DRDNB26W;DI_DRDNB26W_DIODE;Diodes;Si;  75.0V  0.250A  4.00ns   Diodes Inc. Switching Diode
.MODEL DI_DRDNB26W_DIODE D  ( IS=300n RS=0.422 BV=75.0 IBV=2.50u
+ CJO=1.99p  M=0.333 N=2.77 TT=5.76n )


*SRC=DRDP006W;DI_DRDP006W_PNP;BJTs PNP; Si;  60.0V  0.600A  200MHz   Diodes Inc. Transistor 
.MODEL DI_DRDP006W_PNP  PNP (IS=60.7f NF=1.00 BF=312 VAF=139 
+ IKF=0.219 ISE=26.0p NE=2.00 BR=4.00 NR=1.00 
+ VAR=20.0 IKR=0.540 RE=85.8m RB=0.343 RC=34.3m 
+ XTB=1.5 CJE=50.4p VJE=1.10 MJE=0.500 CJC=23.1p VJC=0.300 
+ MJC=0.300 TF=758p TR=123n EG=1.12 )

*SRC=DRDP006W;DI_DRDP006W_DIODE;Diodes;Si;  75.0V  0.250A  4.00ns   Diodes Inc. Switching Diode
.MODEL DI_DRDP006W_DIODE D  ( IS=300n RS=0.422 BV=75.0 IBV=2.50u
+ CJO=1.99p  M=0.333 N=2.77 TT=5.76n )


*SRC=DRDPB16W;DI_DRDPB16W_PNP;BJTs PNP; Si;  32.0V  0.500A  220MHz   Diodes Inc. PBTs
.MODEL DI_DRDPB16W_PNP  PNP (IS=50.6f NF=1.00 BF=534 VAF=102
+ IKF=0.340 ISE=17.3p NE=2.00 BR=4.00 NR=1.00
+ VAR=20.0 IKR=0.840 RE=0.283 RB=1.13 RC=0.113
+ XTB=1.5 CJE=55.3p VJE=1.10 MJE=0.500 CJC=21.3p VJC=0.300
+ MJC=0.300 TF=605p TR=120n EG=1.12 )

*SRC=DRDPB16W;DI_DRDPB16W_DIODE;Diodes;Si;  75.0V  0.250A  4.00ns   Diodes Inc. Switching Diode
.MODEL DI_DRDPB16W_DIODE D  ( IS=300n RS=0.422 BV=75.0 IBV=2.50u
+ CJO=1.99p  M=0.333 N=2.77 TT=5.76n )


*SRC=DRDPB26W;DI_DRDPB26W_PNP;BJTs PNP; Si;  32.0V  0.500A  220MHz   Diodes Inc. PBTs
.MODEL DI_DRDPB26W_PNP  PNP (IS=50.6f NF=1.00 BF=534 VAF=102
+ IKF=0.340 ISE=17.3p NE=2.00 BR=4.00 NR=1.00
+ VAR=20.0 IKR=0.840 RE=0.283 RB=1.13 RC=0.113
+ XTB=1.5 CJE=55.3p VJE=1.10 MJE=0.500 CJC=21.3p VJC=0.300
+ MJC=0.300 TF=605p TR=120n EG=1.12 )

*SRC=DRDPB26W;DI_DRDPB26W_DIODE;Diodes;Si;  75.0V  0.250A  4.00ns   Diodes Inc. Switching Diode
.MODEL DI_DRDPB26W_DIODE D  ( IS=300n RS=0.422 BV=75.0 IBV=2.50u
+ CJO=1.99p  M=0.333 N=2.77 TT=5.76n )