* DIODES INCORPORATED AND ITS AFFILIATED COMPANIES AND SUBSIDIARIES (COLLECTIVELY, "DIODES") * PROVIDE THESE SPICE MODELS AND DATA (COLLECTIVELY, THE "SM DATA") "AS IS" AND WITHOUT ANY * REPRESENTATIONS OR WARRANTIES, EXPRESS OR IMPLIED, INCLUDING ANY WARRANTY OF MERCHANTABILITY * OR FITNESS FOR A PARTICULAR PURPOSE, ANY WARRANTY ARISING FROM COURSE OF DEALING OR COURSE OF * PERFORMANCE, OR ANY WARRANTY THAT ACCESS TO OR OPERATION OF THE SM DATA WILL BE UNINTERRUPTED, * OR THAT THE SM DATA OR ANY SIMULATION USING THE SM DATA WILL BE ERROR FREE. TO THE MAXIMUM * EXTENT PERMITTED BY LAW, IN NO EVENT WILL DIODES BE LIABLE FOR ANY DIRECT OR INDIRECT, * SPECIAL, INCIDENTAL, PUNITIVE OR CONSEQUENTIAL DAMAGES ARISING OUT OF OR IN CONNECTION WITH * THE PRODUCTION OR USE OF SM DATA, HOWEVER CAUSED AND UNDER WHATEVER CAUSE OF ACTION OR THEORY * OF LIABILITY BROUGHT (INCLUDING, WITHOUT LIMITATION, UNDER ANY CONTRACT, NEGLIGENCE OR OTHER * TORT THEORY OF LIABILITY), EVEN IF DIODES HAS BEEN ADVISED OF THE POSSIBILITY OF SUCH DAMAGES, * AND DIODES' TOTAL LIABILITY (WHETHER IN CONTRACT, TORT OR OTHERWISE) WITH REGARD TO THE SM * DATA WILL NOT, IN THE AGGREGATE, EXCEED ANY SUMS PAID BY YOU TO DIODES FOR THE SM DATA. *TITLE=BCR401UW6 *DATE=12/05/2016 *ORIGIN=DZSL_DPG_SU *SIMULATOR=SIMETRIX *VERSION=1 *PIN ORDER 1:GND 2:OUT 3:OUT 4:VS 5:OUT 6:Rext .SUBCKT BCR401UW6 1 6 2 5 3 4 Q1 5 8 6 BCRPNP R1 8 1 22K TC=2m,8u R2 6 4 91 TC=3.5m,6u Rshort23 2 3 1m Rshort35 3 5 1m D1 4 9 BCRdiode D2 9 8 BCRdiode .MODEL BCRPNP PNP (IS=100.000f NF=0.995 BF=440 VAF=4.000 IKF=.14 + ISE=.55n NE=2.234 NR=1.005 BR=4.800 ISC=0.125P NC=2.074 + RB=1.00 RE=0.82 RC=1.4 + CJE=10P VJE=0.9000 MJE=0.4 + CJC=10P VJC=0.900 MJC=0.55 + TF=8.600n TR=2.604n XTB=1.900 EG=1.110 XTI=3.300) .model BCRdiode D(IS=2.4E-16 N=1.06 RS=2 IBV=1.00E-04 BV=7.5E+01 IKF=.15m + M=.45 CJO=1E-14 EG=1.11E+00 + TT=8.66E-012 VJ=1.1E+00 XTI=3.0E+00) .ENDS * (c) 2016 Diodes Inc * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL *TITLE=BCR401UW6Q* DATE=12/05/2016 *ORIGIN=DZSL_DPG_SU *SIMULATOR=SIMETRIX *VERSION=1 *PIN ORDER 1:GND 2:OUT 3:OUT 4:VS 5:OUT 6:Rext .SUBCKT BCR401UW6 1 6 2 5 3 4 Q1 5 8 6 BCRPNP R1 8 1 22K TC=2m,8u R2 6 4 91 TC=3.5m,6u Rshort23 2 3 1m Rshort35 3 5 1m D1 4 9 BCRdiode D2 9 8 BCRdiode .MODEL BCRPNP PNP (IS=100.000f NF=0.995 BF=440 VAF=4.000 IKF=.14 + ISE=.55n NE=2.234 NR=1.005 BR=4.800 ISC=0.125P NC=2.074 + RB=1.00 RE=0.82 RC=1.4 + CJE=10P VJE=0.9000 MJE=0.4 + CJC=10P VJC=0.900 MJC=0.55 + TF=8.600n TR=2.604n XTB=1.900 EG=1.110 XTI=3.300) .model BCRdiode D(IS=2.4E-16 N=1.06 RS=2 IBV=1.00E-04 BV=7.5E+01 IKF=.15m + M=.45 CJO=1E-14 EG=1.11E+00 + TT=8.66E-012 VJ=1.1E+00 XTI=3.0E+00) .ENDS * (c) 2016 Diodes Inc * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL *TITLE=BCR402UW6 *DATE=12/05/2016 *ORIGIN=DZSL_DPG_SU *SIMULATOR=SIMETRIX *VERSION=1 *PIN ORDER 1:GND 2:OUT 3:OUT 4:VS 5:OUT 6:Rext .SUBCKT BCR402UW6 1 6 2 5 3 4 Q1 5 8 6 BCRPNP R1 8 1 22K TC=2m,8u R2 6 4 44 TC=3.5m,6u Rshort23 2 3 1m Rshort35 3 5 1m D1 4 9 BCRdiode D2 9 8 BCRdiode .MODEL BCRPNP PNP (IS=100.000f NF=0.995 BF=440 VAF=4.000 IKF=.14 + ISE=.55n NE=2.234 NR=1.005 BR=4.800 ISC=0.125P NC=2.074 + RB=1.00 RE=0.82 RC=1.4 + CJE=10P VJE=0.9000 MJE=0.4 + CJC=10P VJC=0.900 MJC=0.55 + TF=8.600n TR=2.604n XTB=1.900 EG=1.110 XTI=3.300) .model BCRdiode D(IS=2.4E-16 N=1.06 RS=2 IBV=1.00E-04 BV=7.5E+01 IKF=.15m + M=.45 CJO=1E-14 EG=1.11E+00 + TT=8.66E-012 VJ=1.1E+00 XTI=3.0E+00) .ENDS * (c) 2016 Diodes Inc * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL *TITLE=BCR402UW6Q*DATE=12/05/2016 *ORIGIN=DZSL_DPG_SU *SIMULATOR=SIMETRIX *VERSION=1 *PIN ORDER 1:GND 2:OUT 3:OUT 4:VS 5:OUT 6:Rext .SUBCKT BCR402UW6 1 6 2 5 3 4 Q1 5 8 6 BCRPNP R1 8 1 22K TC=2m,8u R2 6 4 44 TC=3.5m,6u Rshort23 2 3 1m Rshort35 3 5 1m D1 4 9 BCRdiode D2 9 8 BCRdiode .MODEL BCRPNP PNP (IS=100.000f NF=0.995 BF=440 VAF=4.000 IKF=.14 + ISE=.55n NE=2.234 NR=1.005 BR=4.800 ISC=0.125P NC=2.074 + RB=1.00 RE=0.82 RC=1.4 + CJE=10P VJE=0.9000 MJE=0.4 + CJC=10P VJC=0.900 MJC=0.55 + TF=8.600n TR=2.604n XTB=1.900 EG=1.110 XTI=3.300) .model BCRdiode D(IS=2.4E-16 N=1.06 RS=2 IBV=1.00E-04 BV=7.5E+01 IKF=.15m + M=.45 CJO=1E-14 EG=1.11E+00 + TT=8.66E-012 VJ=1.1E+00 XTI=3.0E+00) .ENDS * (c) 2016 Diodes Inc * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL *TITLE=BCR405UW6 *DATE=12/05/2016 *ORIGIN=DZSL_DPG_SU *SIMULATOR=SIMETRIX *VERSION=1 *PIN ORDER 1:GND 2:OUT 3:OUT 4:VS 5:OUT 6:Rext .SUBCKT BCR405UW6 1 6 2 5 3 4 Q1 5 8 6 BCRPNP R1 8 1 22K TC=2m,8u R2 6 4 16.5 TC=4m,6u Rshort23 2 3 1m Rshort35 3 5 1m D1 4 9 BCRdiode D2 9 8 BCRdiode .MODEL BCRPNP PNP (IS=220.000f NF=0.995 BF=440 VAF=4.000 IKF=.18 + ISE=.55n NE=2.234 NR=1.005 BR=4.800 ISC=0.125P NC=2.074 + RB=1.00 RE=0.82 RC=1.4 + CJE=10P VJE=0.9000 MJE=0.4 + CJC=10P VJC=0.900 MJC=0.55 + TF=8.600n TR=2.604n XTB=1.900 EG=1.110 XTI=3.300) .model BCRdiode D(IS=2.4E-16 N=1.06 RS=2 IBV=1.00E-04 BV=7.5E+01 IKF=.08m + M=.45 CJO=1E-14 EG=1.11E+00 + TT=8.66E-012 VJ=1.1E+00 XTI=3.0E+00) .ENDS * (c) 2016 Diodes Inc * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL *TITLE=BCR405UW6Q *DATE=12/05/2016 *ORIGIN=DZSL_DPG_SU *SIMULATOR=SIMETRIX *VERSION=1 *PIN ORDER 1:GND 2:OUT 3:OUT 4:VS 5:OUT 6:Rext .SUBCKT BCR405UW6 1 6 2 5 3 4 Q1 5 8 6 BCRPNP R1 8 1 22K TC=2m,8u R2 6 4 16.5 TC=4m,6u Rshort23 2 3 1m Rshort35 3 5 1m D1 4 9 BCRdiode D2 9 8 BCRdiode .MODEL BCRPNP PNP (IS=220.000f NF=0.995 BF=440 VAF=4.000 IKF=.18 + ISE=.55n NE=2.234 NR=1.005 BR=4.800 ISC=0.125P NC=2.074 + RB=1.00 RE=0.82 RC=1.4 + CJE=10P VJE=0.9000 MJE=0.4 + CJC=10P VJC=0.900 MJC=0.55 + TF=8.600n TR=2.604n XTB=1.900 EG=1.110 XTI=3.300) .model BCRdiode D(IS=2.4E-16 N=1.06 RS=2 IBV=1.00E-04 BV=7.5E+01 IKF=.08m + M=.45 CJO=1E-14 EG=1.11E+00 + TT=8.66E-012 VJ=1.1E+00 XTI=3.0E+00) .ENDS * (c) 2016 Diodes Inc * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG_SU *SIMULATOR=SIMETRIX *DATE=31/03/2017 *VERSION=1 *PIN ORDER 1:NC 2:OUT 3:NC 4:EN 5:Rext 6:GND .SUBCKT BCR420UFD 1 2 3 4 5 6 Q1 2 8 5 BCRNPN R1 4 8 20K TC1=0.2m R2 5 6 95 TC1=2m D1 8 9 BCRdiode D2 9 6 BCRdiode .MODEL BCRNPN NPN IS=300e-11 NF=1.2 ISE=30e-15 NE=1.2 BF=350 + VAF=10 IKF=300m ISC=2e-13 NC=1.2 BR=15 NR=1 RE=0.01 + RB=0.33 RC=0.01 CJE=60e-12 VJE=0.55 MJE=0.36 CJC=15e-12 VJC=0.5 + MJC=0.35 TF=1e-9 TR=4e-9 QUASIMOD=1 RCO=1 GAMMA=1.3e-9 NK=.55 + XTB=1.4 TRE1=0.004 TRB1=0.003 TRC1=0.004 .model BCRdiode D(IS=3f RS=.01 N=1.05 IKF=1m CJO=.5p M=0.3 VJ=0.7 + BV=3 XTI=12.5) .ENDS .SIMULATOR DEFAULT * (c) 2017 Diodes Inc * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG_SU *SIMULATOR=SIMETRIX *DATE=31/03/2017 *VERSION=1 *PIN ORDER 1:NC 2:OUT 3:NC 4:EN 5:Rext 6:GND .SUBCKT BCR420UFD 1 2 3 4 5 6 Q1 2 8 5 BCRNPN R1 4 8 20K TC1=0.2m R2 5 6 95 TC1=2m D1 8 9 BCRdiode D2 9 6 BCRdiode .MODEL BCRNPN NPN IS=300e-11 NF=1.2 ISE=30e-15 NE=1.2 BF=350 + VAF=10 IKF=300m ISC=2e-13 NC=1.2 BR=15 NR=1 RE=0.01 + RB=0.33 RC=0.01 CJE=60e-12 VJE=0.55 MJE=0.36 CJC=15e-12 VJC=0.5 + MJC=0.35 TF=1e-9 TR=4e-9 QUASIMOD=1 RCO=1 GAMMA=1.3e-9 NK=.55 + XTB=1.4 TRE1=0.004 TRB1=0.003 TRC1=0.004 .model BCRdiode D(IS=3f RS=.01 N=1.05 IKF=1m CJO=.5p M=0.3 VJ=0.7 + BV=3 XTI=12.5) .ENDS .SIMULATOR DEFAULT * (c) 2017 Diodes Inc * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG_SU *SIMULATOR=SIMETRIX *DATE=23/07/2015 *VERSION=1 *PIN ORDER 1:EN 2:OUT 3:OUT 4:GND 5:OUT 6:Rext .SUBCKT BCR420UW6 1 2 3 4 5 6 Q1 5 8 6 BCRNPN R1 1 8 20K TC1=0.2m R2 6 4 95 TC1=2m Rshort23 2 3 10u Rshort35 3 5 10u D1 8 9 BCRdiode D2 9 4 BCRdiode .MODEL BCRNPN NPN IS=300e-11 NF=1.2 ISE=30e-15 NE=1.2 BF=350 + VAF=10 IKF=300m ISC=2e-13 NC=1.2 BR=15 NR=1 RE=0.01 + RB=0.33 RC=0.01 CJE=60e-12 VJE=0.55 MJE=0.36 CJC=15e-12 VJC=0.5 + MJC=0.35 TF=1e-9 TR=4e-9 QUASIMOD=1 RCO=1 GAMMA=1.3e-9 NK=.55 + XTB=1.4 TRE1=0.004 TRB1=0.003 TRC1=0.004 .model BCRdiode D(IS=3f RS=.01 N=1.05 IKF=1m CJO=.5p M=0.3 VJ=0.7 + BV=3 XTI=12.5) .ENDS .SIMULATOR DEFAULT *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG_SU *SIMULATOR=SIMETRIX *DATE=23/07/2015 *VERSION=1 *PIN ORDER 1:EN 2:OUT 3:OUT 4:GND 5:OUT 6:Rext .SUBCKT BCR420UW6Q 1 2 3 4 5 6 Q1 5 8 6 BCRNPN R1 1 8 20K TC1=0.2m R2 6 4 95 TC1=2m Rshort23 2 3 10u Rshort35 3 5 10u D1 8 9 BCRdiode D2 9 4 BCRdiode .MODEL BCRNPN NPN IS=300e-11 NF=1.2 ISE=30e-15 NE=1.2 BF=350 + VAF=10 IKF=300m ISC=2e-13 NC=1.2 BR=15 NR=1 RE=0.01 + RB=0.33 RC=0.01 CJE=60e-12 VJE=0.55 MJE=0.36 CJC=15e-12 VJC=0.5 + MJC=0.35 TF=1e-9 TR=4e-9 QUASIMOD=1 RCO=1 GAMMA=1.3e-9 NK=.55 + XTB=1.4 TRE1=0.004 TRB1=0.003 TRC1=0.004 .model BCRdiode D(IS=3f RS=.01 N=1.05 IKF=1m CJO=.5p M=0.3 VJ=0.7 + BV=3 XTI=12.5) .ENDS .SIMULATOR DEFAULT *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG_SU *SIMULATOR=SIMETRIX *DATE=31/03/2017 *VERSION=1 *PIN ORDER 1:NC 2:OUT 3:NC 4:EN 5:Rext 6:GND .SUBCKT BCR421UFD 1 2 3 4 5 6 Q1 2 8 5 BCRNPN R1 4 8 1.5K TC1=0.2m R2 5 6 95 TC1=2m D1 8 9 BCRdiode D2 9 6 BCRdiode .MODEL BCRNPN NPN IS=300e-11 NF=1.2 ISE=30e-15 NE=1.2 BF=350 + VAF=10 IKF=300m ISC=2e-13 NC=1.2 BR=15 NR=1 RE=0.01 + RB=0.33 RC=0.01 CJE=60e-12 VJE=0.55 MJE=0.36 CJC=15e-12 VJC=0.5 + MJC=0.35 TF=1e-9 TR=4e-9 QUASIMOD=1 RCO=1 GAMMA=1.3e-9 NK=.6 + XTB=1.4 TRE1=0.004 TRB1=0.003 TRC1=0.004 .model BCRdiode D(IS=10f RS=.01 N=1.05 IKF=1m CJO=.5p M=0.3 VJ=0.7 + BV=3 XTI=10) .ENDS .SIMULATOR DEFAULT * (c) 2017 Diodes Inc * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG_SU *SIMULATOR=SIMETRIX *DATE=31/03/2017 *VERSION=1 *PIN ORDER 1:NC 2:OUT 3:NC 4:EN 5:Rext 6:GND .SUBCKT BCR421UFD 1 2 3 4 5 6 Q1 2 8 5 BCRNPN R1 4 8 1.5K TC1=0.2m R2 5 6 95 TC1=2m D1 8 9 BCRdiode D2 9 6 BCRdiode .MODEL BCRNPN NPN IS=300e-11 NF=1.2 ISE=30e-15 NE=1.2 BF=350 + VAF=10 IKF=300m ISC=2e-13 NC=1.2 BR=15 NR=1 RE=0.01 + RB=0.33 RC=0.01 CJE=60e-12 VJE=0.55 MJE=0.36 CJC=15e-12 VJC=0.5 + MJC=0.35 TF=1e-9 TR=4e-9 QUASIMOD=1 RCO=1 GAMMA=1.3e-9 NK=.6 + XTB=1.4 TRE1=0.004 TRB1=0.003 TRC1=0.004 .model BCRdiode D(IS=10f RS=.01 N=1.05 IKF=1m CJO=.5p M=0.3 VJ=0.7 + BV=3 XTI=10) .ENDS .SIMULATOR DEFAULT * (c) 2017 Diodes Inc * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG_SU *SIMULATOR=SIMETRIX *DATE=23/07/2015 *VERSION=1 *PIN ORDER 1:EN 2:OUT 3:OUT 4:GND 5:OUT 6:Rext .SUBCKT BCR421UW6 1 2 3 4 5 6 Q1 5 8 6 BCRNPN R1 1 8 1.5K TC1=0.2m R2 6 4 95 TC1=2m Rshort23 2 3 10u Rshort35 3 5 10u D1 8 9 BCRdiode D2 9 4 BCRdiode .MODEL BCRNPN NPN IS=300e-11 NF=1.2 ISE=30e-15 NE=1.2 BF=350 + VAF=10 IKF=300m ISC=2e-13 NC=1.2 BR=15 NR=1 RE=0.01 + RB=0.33 RC=0.01 CJE=60e-12 VJE=0.55 MJE=0.36 CJC=15e-12 VJC=0.5 + MJC=0.35 TF=1e-9 TR=4e-9 QUASIMOD=1 RCO=1 GAMMA=1.3e-9 NK=.6 + XTB=1.4 TRE1=0.004 TRB1=0.003 TRC1=0.004 .model BCRdiode D(IS=10f RS=.01 N=1.05 IKF=1m CJO=.5p M=0.3 VJ=0.7 + BV=3 XTI=10) .ENDS .SIMULATOR DEFAULT *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG_SU *SIMULATOR=SIMETRIX *DATE=23/07/2015 *VERSION=1 *PIN ORDER 1:EN 2:OUT 3:OUT 4:GND 5:OUT 6:Rext .SUBCKT BCR421UW6 1 2 3 4 5 6 Q1 5 8 6 BCRNPN R1 1 8 1.5K TC1=0.2m R2 6 4 95 TC1=2m Rshort23 2 3 10u Rshort35 3 5 10u D1 8 9 BCRdiode D2 9 4 BCRdiode .MODEL BCRNPN NPN IS=300e-11 NF=1.2 ISE=30e-15 NE=1.2 BF=350 + VAF=10 IKF=300m ISC=2e-13 NC=1.2 BR=15 NR=1 RE=0.01 + RB=0.33 RC=0.01 CJE=60e-12 VJE=0.55 MJE=0.36 CJC=15e-12 VJC=0.5 + MJC=0.35 TF=1e-9 TR=4e-9 QUASIMOD=1 RCO=1 GAMMA=1.3e-9 NK=.6 + XTB=1.4 TRE1=0.004 TRB1=0.003 TRC1=0.004 .model BCRdiode D(IS=10f RS=.01 N=1.05 IKF=1m CJO=.5p M=0.3 VJ=0.7 + BV=3 XTI=10) .ENDS .SIMULATOR DEFAULT *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG_PH *SIMULATOR=SIMETRIX *DATE=20th May 2020 *VERSION=1.1 ******************************************************************************* * OTP simulatio usage * RthJA pin is degC / W set as voltage . OV = 0 degC/W * Tamb is ambient temperature in degC 0V = 0 degC ******************************************************************************* *PIN ORDER 1:RthJA 2:GND 3:REXT 4:VS 5:Tamb 6:OUT .subckt BCR430UW6 RthJA GND REXT VS Tamb OUT X1 Vfb_sum H2_P R3_N 0 X1_out PARAM_OPAMP params: VOS=0 IB=100n IBOS=1n A0=2Meg GBW=1Meg SR_POS=40k SR_NEG=1Meg CMRR=100k PSRR=100k RIN=1Meg ROUT=50 IQ=500u VDIFF_POS=10m VDIFF_NEG=10m VOFF_TOL=0 V1 S1_N GND 900m R3 VS R3_N 1K H2 H2_P GND H2$TP_CCVS 10 V$H2$TP_CCVS Q2_S GND 0 X$ARB1 OUT Q2_D Q2_D Pout $$arbsourceARB1 pinnames: I1a I1b N1 OUT .subckt $$arbsourceARB1 I1a I1b N1 OUT V1 I1a I1b 0 B1 OUT 0 V=I(V1)*V(N1) .ends X$ARB4 Pout RthJA DT $$arbsourceARB4 pinnames: N1 N2 OUT .subckt $$arbsourceARB4 N1 N2 OUT B1 OUT 0 V=V(N1) * V(N2) .ends X$ARB5 DT Tamb T $$arbsourceARB5 pinnames: N1 N2 OUT .subckt $$arbsourceARB5 N1 N2 OUT B1 OUT 0 V=V(N1) + V(N2) .ends X$ARB6 ARB7_OUT T Vfb_sum $$arbsourceARB6 pinnames: N1 N2 OUT .subckt $$arbsourceARB6 N1 N2 OUT B1 OUT 0 V=IF( V(N2) > 125 , V(N1) - (V(N1) / 25 * (V(N2) -125)) , V(N1)) .ends X$ARB7 S1_P REXT ARB7_OUT $$arbsourceARB7 pinnames: I1a I1b OUT .subckt $$arbsourceARB7 I1a I1b OUT V1 I1a I1b 0 B1 OUT 0 V=IF ( I(V1) > 4u, 610.53 / ( (0.9/I(V1) )^(1/1.005632) ) *10, 0) .ends X$S1 S1_P S1_N VS GND gen_switch : RON=1 ROFF=2Meg VON=6 VOFF=3 X$Q2 Q2_D X1_out Q2_S BCR430_NMOS C1 R3_N GND 1n .subckt gen_switch 1 2 3 4 S1 1 2 3 4 SW .model SW VSWITCH RON={ron} ROFF={roff} VON={von} VOFF={voff} .ends .subckt PARAM_OPAMP VINP VINN VCC VEE VOUT params: + VOS=0 IB=100n IBOS=1n A0=100k GBW=1e6 SR_POS=1e6 SR_NEG=1e6 + CMRR=100k PSRR=100k RIN=1meg + ROUT=100 IQ=0.001 VDIFF_POS=2 VDIFF_NEG=2 VOFF_TOL=0 *#LABELS ,Offset Voltage,Bias Current,Offset Current,Open-loop Gain,Gain-bandwidth,Pos. Slew Rate,Neg. Slew Rate,CMRR,PSRR,Input Resistance,Output Res.,Quiescent Curr.,Headroom Pos.,Headroom Neg.,Offset V. (Statistical)::-0.1|0.1|10u .PARAM voffStat = {VOFF_TOL*(GAUSS(1)-1)} B1ARB1 G4_N G3_P I=ilim*tanh((V(VINN,VINP)-VOS-voffStat)*Gin/ilim) V1ARB2 G3_P G4_N 0 ** Soft limit using LNCOSH .PARAM sharp=10 ** The first term ensures that there is always at least a tiny amount ** of gain. No gain at all often leads to problems ** Modified 29.4.03 - correct error with vee and vcc ref. B1ARB2 C1_P G4_N V=-R*I(V1ARB2)/A0*1e-5 + ((lncosh(sharp*((-R*I(V1ARB2))-(V(VEE,G4_N)+VDIFF_NEG)))+sharp*(V(VEE,G4_N)+VDIFF_NEG) - (lncosh(sharp*((-R*I(V1ARB2))-(V(VCC,G4_N)-VDIFF_POS)))-sharp*(V(VCC,G4_N)-VDIFF_POS)))/sharp/2) **B1ARB2 C1_P G4_N V=-R*I(V1ARB2)/A0*1e-5 + ((lncosh(sharp*((-R*I(V1ARB2))-(V(VEE)+VDIFF_NEG)))+sharp*(V(VEE)+VDIFF_NEG) - (lncosh(sharp*((-R*I(V1ARB2))-(V(VCC)-VDIFF_POS)))-sharp*(V(VCC)-VDIFF_POS)))/sharp/2) **B1ARB2 C1_P G4_N V=Limit(-R*I(V1ARB2),V(VEE)+VDIFF_NEG, V(VCC)-VDIFF_POS) **.ends V2 V2_P V2_N {Vbias} V3 V2_N V3_N {Vbias} ** 29.04.03 Split offset and bias into separate generators I2 VINP G4_N {IB} IBOS2 VINP G4_N {IBOS/2} I1 VINN G4_N {IB} IBOS1 VINN G4_N {-IBOS/2} C2 V2_N G4_N {1/2/PI/RO/5/gbw} C1 C1_P G3_P {C} E2 G4_N VEE VCC VEE 500m G4 G3_P G4_N VCC G4_N {gin*psgain} G2 G3_P G4_N VEE G4_N {gin*psgain} G3 G3_P G4_N VINN G4_N {gin*cmgain/2} G1 G3_P G4_N VINP G4_N {gin*cmgain/2} Q2 VEE V3_N VOUT VCC P1 Q1 VCC V2_P VOUT VEE N1 R3 V2_N C1_P {RO} ** 19.8.04 - somehow got left off RIN VINP VINN {RIN} .PARAM ILIM = {sqrt(SR_POS)*1e-8} .PARAM C = {1e-8/sqrt(SR_POS)} .PARAM Gin = {2*PI*GBW*C} .PARAM R = {A0/Gin} .PARAM IS=1e-15 .PARAM BETA=100 .model N1 npn IS={IS} bf={BETA} .model P1 pnp IS={IS} bf={BETA} .PARAM Vt={BOLTZ*300.15/ECHARGE} .PARAM cmgain={1.0/CMRR} .PARAM psgain={1.0/PSRR} .PARAM VBIAS = {LN(IQ/IS+1)*Vt} .PARAM RO={(BETA+1)*ROUT-VT/IQ/2*BETA} .ends ** Peak- peak voltage source .SUBCKT BCR430_NMOS 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 ;RD 10 1 0.01938 RD 10 1 1 ;RS 30 3 0.001 RS 30 3 1 RG 20 2 2.05 CGS 2 3 4.156E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 5.7E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 1.394 + TOX = 6E-008 NSUB = 1E+016 KP = 32.82 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 3.123E-010 VJ = 0.6 M = 0.6 .MODEL DSUB D IS = 2.225E-010 N = 1.229 RS = 0.02329 BV = 60 CJO = 2.22E-010 VJ = 0.6 M = 0.6211 .MODEL DLIM D IS = 0.0001 .ENDS .ends BCR430UW6 ****************************************************************************** * (c) 2020 Diodes Inc * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL ****************************************************************************** *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG_PH *SIMULATOR=SIMETRIX *DATE=20th May 2020 *VERSION=1.1 ******************************************************************************* * OTP simulatio usage * RthJA pin is degC / W set as voltage . OV = 0 degC/W * Tamb is ambient temperature in degC 0V = 0 degC ******************************************************************************* *PIN ORDER 1:RthJA 2:GND 3:REXT 4:VS 5:Tamb 6:OUT .subckt BCR430UW6 RthJA GND REXT VS Tamb OUT X1 Vfb_sum H2_P R3_N 0 X1_out PARAM_OPAMP params: VOS=0 IB=100n IBOS=1n A0=2Meg GBW=1Meg SR_POS=40k SR_NEG=1Meg CMRR=100k PSRR=100k RIN=1Meg ROUT=50 IQ=500u VDIFF_POS=10m VDIFF_NEG=10m VOFF_TOL=0 V1 S1_N GND 900m R3 VS R3_N 1K H2 H2_P GND H2$TP_CCVS 10 V$H2$TP_CCVS Q2_S GND 0 X$ARB1 OUT Q2_D Q2_D Pout $$arbsourceARB1 pinnames: I1a I1b N1 OUT .subckt $$arbsourceARB1 I1a I1b N1 OUT V1 I1a I1b 0 B1 OUT 0 V=I(V1)*V(N1) .ends X$ARB4 Pout RthJA DT $$arbsourceARB4 pinnames: N1 N2 OUT .subckt $$arbsourceARB4 N1 N2 OUT B1 OUT 0 V=V(N1) * V(N2) .ends X$ARB5 DT Tamb T $$arbsourceARB5 pinnames: N1 N2 OUT .subckt $$arbsourceARB5 N1 N2 OUT B1 OUT 0 V=V(N1) + V(N2) .ends X$ARB6 ARB7_OUT T Vfb_sum $$arbsourceARB6 pinnames: N1 N2 OUT .subckt $$arbsourceARB6 N1 N2 OUT B1 OUT 0 V=IF( V(N2) > 125 , V(N1) - (V(N1) / 25 * (V(N2) -125)) , V(N1)) .ends X$ARB7 S1_P REXT ARB7_OUT $$arbsourceARB7 pinnames: I1a I1b OUT .subckt $$arbsourceARB7 I1a I1b OUT V1 I1a I1b 0 B1 OUT 0 V=IF ( I(V1) > 4u, 610.53 / ( (0.9/I(V1) )^(1/1.005632) ) *10, 0) .ends X$S1 S1_P S1_N VS GND gen_switch : RON=1 ROFF=2Meg VON=6 VOFF=3 X$Q2 Q2_D X1_out Q2_S BCR430_NMOS C1 R3_N GND 1n .subckt gen_switch 1 2 3 4 S1 1 2 3 4 SW .model SW VSWITCH RON={ron} ROFF={roff} VON={von} VOFF={voff} .ends .subckt PARAM_OPAMP VINP VINN VCC VEE VOUT params: + VOS=0 IB=100n IBOS=1n A0=100k GBW=1e6 SR_POS=1e6 SR_NEG=1e6 + CMRR=100k PSRR=100k RIN=1meg + ROUT=100 IQ=0.001 VDIFF_POS=2 VDIFF_NEG=2 VOFF_TOL=0 *#LABELS ,Offset Voltage,Bias Current,Offset Current,Open-loop Gain,Gain-bandwidth,Pos. Slew Rate,Neg. Slew Rate,CMRR,PSRR,Input Resistance,Output Res.,Quiescent Curr.,Headroom Pos.,Headroom Neg.,Offset V. (Statistical)::-0.1|0.1|10u .PARAM voffStat = {VOFF_TOL*(GAUSS(1)-1)} B1ARB1 G4_N G3_P I=ilim*tanh((V(VINN,VINP)-VOS-voffStat)*Gin/ilim) V1ARB2 G3_P G4_N 0 ** Soft limit using LNCOSH .PARAM sharp=10 ** The first term ensures that there is always at least a tiny amount ** of gain. No gain at all often leads to problems ** Modified 29.4.03 - correct error with vee and vcc ref. B1ARB2 C1_P G4_N V=-R*I(V1ARB2)/A0*1e-5 + ((lncosh(sharp*((-R*I(V1ARB2))-(V(VEE,G4_N)+VDIFF_NEG)))+sharp*(V(VEE,G4_N)+VDIFF_NEG) - (lncosh(sharp*((-R*I(V1ARB2))-(V(VCC,G4_N)-VDIFF_POS)))-sharp*(V(VCC,G4_N)-VDIFF_POS)))/sharp/2) **B1ARB2 C1_P G4_N V=-R*I(V1ARB2)/A0*1e-5 + ((lncosh(sharp*((-R*I(V1ARB2))-(V(VEE)+VDIFF_NEG)))+sharp*(V(VEE)+VDIFF_NEG) - (lncosh(sharp*((-R*I(V1ARB2))-(V(VCC)-VDIFF_POS)))-sharp*(V(VCC)-VDIFF_POS)))/sharp/2) **B1ARB2 C1_P G4_N V=Limit(-R*I(V1ARB2),V(VEE)+VDIFF_NEG, V(VCC)-VDIFF_POS) **.ends V2 V2_P V2_N {Vbias} V3 V2_N V3_N {Vbias} ** 29.04.03 Split offset and bias into separate generators I2 VINP G4_N {IB} IBOS2 VINP G4_N {IBOS/2} I1 VINN G4_N {IB} IBOS1 VINN G4_N {-IBOS/2} C2 V2_N G4_N {1/2/PI/RO/5/gbw} C1 C1_P G3_P {C} E2 G4_N VEE VCC VEE 500m G4 G3_P G4_N VCC G4_N {gin*psgain} G2 G3_P G4_N VEE G4_N {gin*psgain} G3 G3_P G4_N VINN G4_N {gin*cmgain/2} G1 G3_P G4_N VINP G4_N {gin*cmgain/2} Q2 VEE V3_N VOUT VCC P1 Q1 VCC V2_P VOUT VEE N1 R3 V2_N C1_P {RO} ** 19.8.04 - somehow got left off RIN VINP VINN {RIN} .PARAM ILIM = {sqrt(SR_POS)*1e-8} .PARAM C = {1e-8/sqrt(SR_POS)} .PARAM Gin = {2*PI*GBW*C} .PARAM R = {A0/Gin} .PARAM IS=1e-15 .PARAM BETA=100 .model N1 npn IS={IS} bf={BETA} .model P1 pnp IS={IS} bf={BETA} .PARAM Vt={BOLTZ*300.15/ECHARGE} .PARAM cmgain={1.0/CMRR} .PARAM psgain={1.0/PSRR} .PARAM VBIAS = {LN(IQ/IS+1)*Vt} .PARAM RO={(BETA+1)*ROUT-VT/IQ/2*BETA} .ends ** Peak- peak voltage source .SUBCKT BCR430_NMOS 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 ;RD 10 1 0.01938 RD 10 1 1 ;RS 30 3 0.001 RS 30 3 1 RG 20 2 2.05 CGS 2 3 4.156E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 5.7E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 1.394 + TOX = 6E-008 NSUB = 1E+016 KP = 32.82 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 3.123E-010 VJ = 0.6 M = 0.6 .MODEL DSUB D IS = 2.225E-010 N = 1.229 RS = 0.02329 BV = 60 CJO = 2.22E-010 VJ = 0.6 M = 0.6211 .MODEL DLIM D IS = 0.0001 .ENDS .ends BCR430UW6 ****************************************************************************** * (c) 2020 Diodes Inc * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL ******************************************************************************