* DIODES INCORPORATED AND ITS AFFILIATED COMPANIES AND SUBSIDIARIES (COLLECTIVELY, "DIODES") * PROVIDE THESE SPICE MODELS AND DATA (COLLECTIVELY, THE "SM DATA") "AS IS" AND WITHOUT ANY * REPRESENTATIONS OR WARRANTIES, EXPRESS OR IMPLIED, INCLUDING ANY WARRANTY OF MERCHANTABILITY * OR FITNESS FOR A PARTICULAR PURPOSE, ANY WARRANTY ARISING FROM COURSE OF DEALING OR COURSE OF * PERFORMANCE, OR ANY WARRANTY THAT ACCESS TO OR OPERATION OF THE SM DATA WILL BE UNINTERRUPTED, * OR THAT THE SM DATA OR ANY SIMULATION USING THE SM DATA WILL BE ERROR FREE. TO THE MAXIMUM * EXTENT PERMITTED BY LAW, IN NO EVENT WILL DIODES BE LIABLE FOR ANY DIRECT OR INDIRECT, * SPECIAL, INCIDENTAL, PUNITIVE OR CONSEQUENTIAL DAMAGES ARISING OUT OF OR IN CONNECTION WITH * THE PRODUCTION OR USE OF SM DATA, HOWEVER CAUSED AND UNDER WHATEVER CAUSE OF ACTION OR THEORY * OF LIABILITY BROUGHT (INCLUDING, WITHOUT LIMITATION, UNDER ANY CONTRACT, NEGLIGENCE OR OTHER * TORT THEORY OF LIABILITY), EVEN IF DIODES HAS BEEN ADVISED OF THE POSSIBILITY OF SUCH DAMAGES, * AND DIODES' TOTAL LIABILITY (WHETHER IN CONTRACT, TORT OR OTHERWISE) WITH REGARD TO THE SM * DATA WILL NOT, IN THE AGGREGATE, EXCEED ANY SUMS PAID BY YOU TO DIODES FOR THE SM DATA. *SRC=ABS10A;DI_ABS10A;Diodes;Si; 1000V 1.0A 3.00us Diodes Inc. Bridge Rectifier -- for one element .MODEL DI_ABS10A D ( IS=3.47n RS=42.6m BV=1000 IBV=5.00u + CJO=25.2p M=0.333 N=1.70 TT=4.32u ) *SRC=DF005M;DI_DF005M;Diodes;Si; 50.0V 1.00A 3.00us Diodes Inc. Bridge -- for one element .MODEL DI_DF005M D ( IS=4.42n RS=42.0m BV=50.0 IBV=10.0u + CJO=65.0p M=0.333 N=1.70 TT=4.32u ) *SRC=DF005S;DI_DF005S;Diodes;Si; 50.0V 1.00A 3.00us Diodes Inc. Bridge -- for one element .MODEL DI_DF005S D ( IS=4.42n RS=42.0m BV=50.0 IBV=10.0u + CJO=65.0p M=0.333 N=1.70 TT=4.32u ) *SRC=DF01M;DI_DF01M;Diodes;Si; 100V 1.00A 3.00us Diodes Inc. Bridge -- for one element .MODEL DI_DF01M D ( IS=4.42n RS=42.0m BV=100 IBV=10.0u + CJO=65.0p M=0.333 N=1.70 TT=4.32u ) *SRC=DF01S;DI_DF01S;Diodes;Si; 100V 1.00A 3.00us Diodes Inc. Bridge -- for one element .MODEL DI_DF01S D ( IS=4.42n RS=42.0m BV=100 IBV=10.0u + CJO=65.0p M=0.333 N=1.70 TT=4.32u ) *SRC=DF02M;DI_DF02M;Diodes;Si; 200V 1.00A 3.00us Diodes Inc. Bridge -- for one element .MODEL DI_DF02M D ( IS=4.42n RS=42.0m BV=200 IBV=10.0u + CJO=65.0p M=0.333 N=1.70 TT=4.32u ) *SRC=DF02S;DI_DF02S;Diodes;Si; 200V 1.00A 3.00us Diodes Inc. Bridge -- for one element .MODEL DI_DF02S D ( IS=4.42n RS=42.0m BV=200 IBV=10.0u + CJO=65.0p M=0.333 N=1.70 TT=4.32u ) *SRC=DF04M;DI_DF04M;Diodes;Si; 400V 1.00A 3.00us Diodes Inc. Bridge -- for one element .MODEL DI_DF04M D ( IS=4.42n RS=42.0m BV=400 IBV=10.0u + CJO=65.0p M=0.333 N=1.70 TT=4.32u ) *SRC=DF04S;DI_DF04S;Diodes;Si; 400V 1.00A 3.00us Diodes Inc. Bridge -- for one element .MODEL DI_DF04S D ( IS=4.42n RS=42.0m BV=400 IBV=10.0u + CJO=65.0p M=0.333 N=1.70 TT=4.32u ) *SRC=DF06M;DI_DF06M;Diodes;Si; 600V 1.00A 3.00us Diodes Inc. Bridge -- for one element .MODEL DI_DF06M D ( IS=4.42n RS=42.0m BV=600 IBV=10.0u + CJO=65.0p M=0.333 N=1.70 TT=4.32u ) *SRC=DF06S;DI_DF06S;Diodes;Si; 600V 1.00A 3.00us Diodes Inc. Bridge -- for one element .MODEL DI_DF06S D ( IS=4.42n RS=42.0m BV=600 IBV=10.0u + CJO=65.0p M=0.333 N=1.70 TT=4.32u ) *SRC=DF08M;DI_DF08M;Diodes;Si; 800V 1.00A 3.00us Diodes Inc. Bridge -- for one element .MODEL DI_DF08M D ( IS=4.42n RS=42.0m BV=800 IBV=10.0u + CJO=65.0p M=0.333 N=1.70 TT=4.32u ) *SRC=DF08S;DI_DF08S;Diodes;Si; 800V 1.00A 3.00us Diodes Inc. Bridge -- for one element .MODEL DI_DF08S D ( IS=4.42n RS=42.0m BV=800 IBV=10.0u + CJO=65.0p M=0.333 N=1.70 TT=4.32u ) *SRC=DF10M;DI_DF10M;Diodes;Si; 1.00kV 1.00A 3.00us Diodes Inc. Bridge -- for one element .MODEL DI_DF10M D ( IS=4.42n RS=42.0m BV=1.00k IBV=10.0u + CJO=65.0p M=0.333 N=1.70 TT=4.32u ) *SRC=DF10S;DI_DF10S;Diodes;Si; 1.00kV 1.00A 3.00us Diodes Inc. Bridge -- for one element .MODEL DI_DF10S D ( IS=4.42n RS=42.0m BV=1.00k IBV=10.0u + CJO=65.0p M=0.333 N=1.70 TT=4.32u ) *SRC=DF15005S;DI_DF15005S;Diodes;Si; 50.0V 1.50A 3.00us Diodes Inc. Bridge -- for one element .MODEL DI_DF15005S D ( IS=2.06n RS=28.1m BV=50.0 IBV=10.0u + CJO=65.0p M=0.333 N=1.70 TT=4.32u ) *SRC=DF1501S;DI_DF1501S;Diodes;Si; 100V 1.50A 3.00us Diodes Inc. Bridge -- for one element .MODEL DI_DF1501S D ( IS=2.06n RS=28.1m BV=100 IBV=10.0u + CJO=65.0p M=0.333 N=1.70 TT=4.32u ) *SRC=DF1502S;DI_DF1502S;Diodes;Si; 200V 1.50A 3.00us Diodes Inc. Bridge -- for one element .MODEL DI_DF1502S D ( IS=2.06n RS=28.1m BV=200 IBV=10.0u + CJO=65.0p M=0.333 N=1.70 TT=4.32u ) *SRC=DF1504S;DI_DF1504S;Diodes;Si; 400V 1.50A 3.00us Diodes Inc. Bridge -- for one element .MODEL DI_DF1504S D ( IS=2.06n RS=28.1m BV=400 IBV=10.0u + CJO=65.0p M=0.333 N=1.70 TT=4.32u ) *SRC=DF1506S;DI_DF1506S;Diodes;Si; 600V 1.50A 3.00us Diodes Inc. Bridge -- for one element .MODEL DI_DF1506S D ( IS=2.06n RS=28.1m BV=600 IBV=10.0u + CJO=65.0p M=0.333 N=1.70 TT=4.32u ) *SRC=DF1508S;DI_DF1508S;Diodes;Si; 800V 1.50A 3.00us Diodes Inc. Bridge -- for one element .MODEL DI_DF1508S D ( IS=2.06n RS=28.1m BV=800 IBV=10.0u + CJO=65.0p M=0.333 N=1.70 TT=4.32u ) *SRC=DF1510S;DI_DF1510S;Diodes;Si; 1.00kV 1.50A 3.00us Diodes Inc. Bridge -- for one element .MODEL DI_DF1510S D ( IS=2.06n RS=28.1m BV=1.00k IBV=10.0u + CJO=65.0p M=0.333 N=1.70 TT=4.32u ) *SRC=DLPA006;DI_DLPA006;Diodes;Si; 85.0V 0.160A 3.00us Diodes, Inc. Switching - one element of DLPA006 array .MODEL DI_DLPA006 D ( IS=59.0p RS=0.262 BV=85.0 IBV=5.00n + CJO=2.00p M=0.333 N=1.78 TT=4.32u ) *SRC=GBJ15005;DI_GBJ15005;Diodes;Si; 50.0V 15.0A 3.00us Diodes Inc. Bridge Rectifier -- for one element .MODEL DI_GBJ15005 D ( IS=5.11u RS=3.43m BV=50.0 IBV=10.0u + CJO=106p M=0.333 N=2.44 TT=4.32u ) *SRC=GBJ1501;DI_GBJ1501;Diodes;Si; 100V 15.0A 3.00us Diodes Inc. Bridge Rectifier -- for one element .MODEL DI_GBJ1501 D ( IS=5.11u RS=3.43m BV=100 IBV=10.0u + CJO=106p M=0.333 N=2.44 TT=4.32u ) *SRC=GBJ1502;DI_GBJ1502;Diodes;Si; 200V 15.0A 3.00us Diodes Inc. Bridge Rectifier -- for one element .MODEL DI_GBJ1502 D ( IS=5.11u RS=3.43m BV=200 IBV=10.0u + CJO=106p M=0.333 N=2.44 TT=4.32u ) *SRC=GBJ1504;DI_GBJ1504;Diodes;Si; 400V 15.0A 3.00us Diodes Inc. Bridge Rectifier -- for one element .MODEL DI_GBJ1504 D ( IS=5.11u RS=3.43m BV=400 IBV=10.0u + CJO=106p M=0.333 N=2.44 TT=4.32u ) *SRC=GBJ1506;DI_GBJ1506;Diodes;Si; 600V 15.0A 3.00us Diodes Inc. Bridge Rectifier -- for one element .MODEL DI_GBJ1506 D ( IS=5.11u RS=3.43m BV=600 IBV=10.0u + CJO=106p M=0.333 N=2.44 TT=4.32u ) *SRC=GBJ1508;DI_GBJ1508;Diodes;Si; 800V 15.0A 3.00us Diodes Inc. Bridge Rectifier -- for one element .MODEL DI_GBJ1508 D ( IS=5.11u RS=3.43m BV=800 IBV=10.0u + CJO=106p M=0.333 N=2.44 TT=4.32u ) *SRC=GBJ1510;DI_GBJ1510;Diodes;Si; 1.00kV 15.0A 3.00us Diodes Inc. Bridge Rectifier -- for one element .MODEL DI_GBJ1510 D ( IS=5.11u RS=3.43m BV=1.00k IBV=10.0u + CJO=106p M=0.333 N=2.44 TT=4.32u ) *SRC=GBJ20005;DI_GBJ20005;Diodes;Si; 50.0V 20.0A 3.00us Diodes Inc. Bridge Rect. This model covers only one element. There are four elements per pkg. .MODEL DI_GBJ20005 D ( IS=15.1u RS=2.96m BV=50.0 IBV=10.0u + CJO=111p M=0.333 N=2.84 TT=4.32u ) *SRC=GBJ2001;DI_GBJ2001;Diodes;Si; 100V 20.0A 3.00us Diodes Inc. Bridge Rect. This model covers only one element. There are four elements per pkg. .MODEL DI_GBJ2001 D ( IS=15.1u RS=2.96m BV=100 IBV=10.0u + CJO=111p M=0.333 N=2.84 TT=4.32u ) *SRC=GBJ2002;DI_GBJ2002;Diodes;Si; 200V 20.0A 3.00us Diodes Inc. Bridge Rect. This model covers only one element. There are four elements per pkg. .MODEL DI_GBJ2002 D ( IS=15.1u RS=2.96m BV=200 IBV=10.0u + CJO=111p M=0.333 N=2.84 TT=4.32u ) *SRC=GBJ2004;DI_GBJ2004;Diodes;Si; 400V 20.0A 3.00us Diodes Inc. Bridge Rect. This model covers only one element. There are four elements per pkg. .MODEL DI_GBJ2004 D ( IS=15.1u RS=2.96m BV=400 IBV=10.0u + CJO=111p M=0.333 N=2.84 TT=4.32u ) *SRC=GBJ2006;DI_GBJ2006;Diodes;Si; 600V 20.0A 3.00us Diodes Inc. Bridge Rect. This model covers only one element. There are four elements per pkg. .MODEL DI_GBJ2006 D ( IS=15.1u RS=2.96m BV=600 IBV=10.0u + CJO=111p M=0.333 N=2.84 TT=4.32u ) *SRC=GBJ2008;DI_GBJ2008;Diodes;Si; 800V 20.0A 3.00us Diodes Inc. Bridge Rect. This model covers only one element. There are four elements per pkg. .MODEL DI_GBJ2008 D ( IS=15.1u RS=2.96m BV=800 IBV=10.0u + CJO=111p M=0.333 N=2.84 TT=4.32u ) *SRC=GBJ2010;DI_GBJ2010;Diodes;Si; 1.00kV 20.0A 3.00us Diodes Inc. Bridge Rect. This model covers only one element. There are four elements per pkg. .MODEL DI_GBJ2010 D ( IS=15.1u RS=2.96m BV=1.00k IBV=10.0u + CJO=111p M=0.333 N=2.84 TT=4.32u ) *SRC=GBJ2510;DI_GBJ2510;Diodes;Si; 1.00kV 25.0A 3.00us Diodes Inc. Bridge Rectifier--Per Element .MODEL DI_GBJ2510 D ( IS=379n RS=2.84m BV=1.00k IBV=10.0u + CJO=146p M=0.333 N=2.07 TT=4.32u ) *SRC=GBU1002;DI_GBU1002;Diodes;Si; 200V 10.0A 3.00us Diodes Inc. Bridge Rectifier -- Per Element .MODEL DI_GBU1002 D ( IS=1.71f RS=7.00m BV=200 IBV=5.00u + CJO=133p M=0.333 N=0.900 TT=4.32u ) *SRC=GBU1010;DI_GBU1010;Diodes;Si; 1000V 10.0A 3.00us Diodes Inc. Bridge Rectifier -- Per Element .MODEL DI_GBU1010 D ( IS=1.71f RS=7.00m BV=1000 IBV=5.00u + CJO=133p M=0.333 N=0.900 TT=4.32u ) .ENDS* *SRC=GBU4005;DI_GBU4005;Diodes;Si; 50.0V 4.00A 3.00us Diodes Inc. Bridge -- for one element .MODEL DI_GBU4005 D ( IS=23.3n RS=7.20m BV=50.0 IBV=5.00u + CJO=148p M=0.333 N=1.80 TT=4.32u ) *SRC=GBU401;DI_GBU401;Diodes;Si; 100V 4.00A 3.00us Diodes Inc. Bridge -- for one element .MODEL DI_GBU401 D ( IS=23.3n RS=7.20m BV=100 IBV=5.00u + CJO=148p M=0.333 N=1.80 TT=4.32u ) *SRC=GBU402;DI_GBU402;Diodes;Si; 200V 4.00A 3.00us Diodes Inc. Bridge -- for one element .MODEL DI_GBU402 D ( IS=23.3n RS=7.20m BV=200 IBV=5.00u + CJO=148p M=0.333 N=1.80 TT=4.32u ) *SRC=GBU404;DI_GBU404;Diodes;Si; 400V 4.00A 3.00us Diodes Inc. Bridge -- for one element .MODEL DI_GBU404 D ( IS=23.3n RS=7.20m BV=400 IBV=5.00u + CJO=148p M=0.333 N=1.80 TT=4.32u ) *SRC=GBU406;DI_GBU406;Diodes;Si; 600V 4.00A 3.00us Diodes Inc. Bridge -- for one element .MODEL DI_GBU406 D ( IS=23.3n RS=7.20m BV=600 IBV=5.00u + CJO=148p M=0.333 N=1.80 TT=4.32u ) *SRC=GBU408;DI_GBU408;Diodes;Si; 800V 4.00A 3.00us Diodes Inc. Bridge -- for one element .MODEL DI_GBU408 D ( IS=23.3n RS=7.20m BV=800 IBV=5.00u + CJO=148p M=0.333 N=1.80 TT=4.32u ) *SRC=GBU410;DI_GBU410;Diodes;Si; 1.00kV 4.00A 3.00us Diodes Inc. Bridge -- for one element .MODEL DI_GBU410 D ( IS=23.3n RS=7.20m BV=1.00k IBV=5.00u + CJO=148p M=0.333 N=1.80 TT=4.32u ) *SRC=GBU8005;DI_GBU8005;Diodes;Si; 50.0V 8.00A 3.00us Diodes Inc. Bridge -- for one element .MODEL DI_GBU8005 D ( IS=17.8p RS=7.59m BV=50.0 IBV=5.00u + CJO=240p M=0.333 N=1.25 TT=4.32u ) *SRC=GBU801;DI_GBU801;Diodes;Si; 100V 8.00A 3.00us Diodes Inc. Bridge -- for one element .MODEL DI_GBU801 D ( IS=17.8p RS=7.59m BV=100 IBV=5.00u + CJO=240p M=0.333 N=1.25 TT=4.32u ) *SRC=GBU802;DI_GBU802;Diodes;Si; 200V 8.00A 3.00us Diodes Inc. Bridge -- for one element .MODEL DI_GBU802 D ( IS=17.8p RS=7.59m BV=200 IBV=5.00u + CJO=240p M=0.333 N=1.25 TT=4.32u ) *SRC=GBU804;DI_GBU804;Diodes;Si; 400V 8.00A 3.00us Diodes Inc. Bridge -- for one element .MODEL DI_GBU804 D ( IS=17.8p RS=7.59m BV=400 IBV=5.00u + CJO=240p M=0.333 N=1.25 TT=4.32u ) *SRC=GBU806;DI_GBU806;Diodes;Si; 600V 8.00A 3.00us Diodes Inc. Bridge -- for one element .MODEL DI_GBU806 D ( IS=17.8p RS=7.59m BV=600 IBV=5.00u + CJO=240p M=0.333 N=1.25 TT=4.32u ) *SRC=GBU808;DI_GBU808;Diodes;Si; 800V 8.00A 3.00us Diodes Inc. Bridge -- for one element .MODEL DI_GBU808 D ( IS=17.8p RS=7.59m BV=800 IBV=5.00u + CJO=240p M=0.333 N=1.25 TT=4.32u ) *SRC=GBU810;DI_GBU810;Diodes;Si; 1.00kV 8.00A 3.00us Diodes Inc. Bridge -- for one element .MODEL DI_GBU810 D ( IS=17.8p RS=7.59m BV=1.00k IBV=5.00u + CJO=240p M=0.333 N=1.25 TT=4.32u ) *SRC=HBS410;DI_HBS410;Diodes;Si; 1.00kV 4.00A 3.00µs Diodes Inc. Bridge -- for one element .MODEL DI_HBS410 D ( IS=130.2n RS=6.366m BV=1.229k IBV=1m + CJO=69.01p M=0.295 N=2.075 TT=4.32µ) *SRC=HD01;DI_HD01;Diodes;Si; 100V 0.800A 3.00us Diodes Inc. Bridge Rectifier -- for one element .MODEL DI_HD01 D ( IS=3.47n RS=42.6m BV=100 IBV=5.00u + CJO=25.2p M=0.333 N=1.70 TT=4.32u ) *SRC=HD02;DI_HD02;Diodes;Si; 200V 0.800A 3.00us Diodes Inc. Bridge Rectifier -- for one element .MODEL DI_HD02 D ( IS=3.47n RS=42.6m BV=200 IBV=5.00u + CJO=25.2p M=0.333 N=1.70 TT=4.32u ) *SRC=HD04;DI_HD04;Diodes;Si; 400V 0.800A 3.00us Diodes Inc. Bridge Rectifier -- for one element .MODEL DI_HD04 D ( IS=3.47n RS=42.6m BV=400 IBV=5.00u + CJO=25.2p M=0.333 N=1.70 TT=4.32u ) *SRC=HD06;DI_HD06;Diodes;Si; 600V 0.800A 3.00us Diodes Inc. Bridge Rectifier -- for one element .MODEL DI_HD06 D ( IS=3.47n RS=42.6m BV=600 IBV=5.00u + CJO=25.2p M=0.333 N=1.70 TT=4.32u ) *SRC=KBJ4005G;DI_KBJ4005G;Diodes;Si; 50.0V 4.00A 3.00us Diodes Inc. Bridge Rectifier - Per Diode .MODEL DI_KBJ4005G D ( IS=656n RS=10.5m BV=50.0 IBV=10.0u + CJO=79.6p M=0.333 N=2.45 TT=4.32u ) *SRC=KBJ401G;DI_KBJ401G;Diodes;Si; 100V 4.00A 3.00us Diodes Inc. Bridge Rectifier - Per Diode .MODEL DI_KBJ401G D ( IS=656n RS=10.5m BV=100 IBV=10.0u + CJO=79.6p M=0.333 N=2.45 TT=4.32u ) *SRC=KBJ402G;DI_KBJ402G;Diodes;Si; 200V 4.00A 3.00us Diodes Inc. Bridge Rectifier - Per Diode .MODEL DI_KBJ402G D ( IS=656n RS=10.5m BV=200 IBV=10.0u + CJO=79.6p M=0.333 N=2.45 TT=4.32u ) *SRC=KBJ404G;DI_KBJ404G;Diodes;Si; 400V 4.00A 3.00us Diodes Inc. Bridge Rectifier - Per Diode .MODEL DI_KBJ404G D ( IS=656n RS=10.5m BV=400 IBV=10.0u + CJO=79.6p M=0.333 N=2.45 TT=4.32u ) *SRC=KBJ406G;DI_KBJ406G;Diodes;Si; 600V 4.00A 3.00us Diodes Inc. Bridge Rectifier - Per Diode .MODEL DI_KBJ406G D ( IS=656n RS=10.5m BV=600 IBV=10.0u + CJO=79.6p M=0.333 N=2.45 TT=4.32u ) *SRC=KBJ408G;DI_KBJ408G;Diodes;Si; 800V 4.00A 3.00us Diodes Inc. Bridge Rectifier - Per Diode .MODEL DI_KBJ408G D ( IS=656n RS=10.5m BV=800 IBV=10.0u + CJO=79.6p M=0.333 N=2.45 TT=4.32u ) *SRC=KBJ410G;DI_KBJ410G;Diodes;Si; 1.00kV 4.00A 3.00us Diodes Inc. Bridge Rectifier - Per Diode .MODEL DI_KBJ410G D ( IS=656n RS=10.5m BV=1.00k IBV=10.0u + CJO=79.6p M=0.333 N=2.45 TT=4.32u ) *SRC=KBP005G;DI_KBP005G;Diodes;Si; 50.0V 1.50A 3.00us Diodes Inc. Bridge -- for one element .MODEL DI_KBP005G D ( IS=39.2u RS=28.1m BV=50.0 IBV=5.00u + CJO=26.5p M=0.333 N=4.38 TT=4.32u ) *SRC=KBP01G;DI_KBP01G;Diodes;Si; 100V 1.50A 3.00us Diodes Inc. Bridge -- for one element .MODEL DI_KBP01G D ( IS=39.2u RS=28.1m BV=100 IBV=5.00u + CJO=26.5p M=0.333 N=4.38 TT=4.32u ) *SRC=KBP02G;DI_KBP02G;Diodes;Si; 200V 1.50A 3.00us Diodes Inc. Bridge -- for one element .MODEL DI_KBP02G D ( IS=39.2u RS=28.1m BV=200 IBV=5.00u + CJO=26.5p M=0.333 N=4.38 TT=4.32u ) *SRC=KBP04G;DI_KBP04G;Diodes;Si; 400V 1.50A 3.00us Diodes Inc. Bridge -- for one element .MODEL DI_KBP04G D ( IS=39.2u RS=28.1m BV=400 IBV=5.00u + CJO=26.5p M=0.333 N=4.38 TT=4.32u ) *SRC=KBP06G;DI_KBP06G;Diodes;Si; 600V 1.50A 3.00us Diodes Inc. Bridge -- for one element .MODEL DI_KBP06G D ( IS=39.2u RS=28.1m BV=600 IBV=5.00u + CJO=26.5p M=0.333 N=4.38 TT=4.32u ) *SRC=KBP08G;DI_KBP08G;Diodes;Si; 800V 1.50A 3.00us Diodes Inc. Bridge -- for one element .MODEL DI_KBP08G D ( IS=39.2u RS=28.1m BV=800 IBV=5.00u + CJO=26.5p M=0.333 N=4.38 TT=4.32u ) *SRC=KBP10G;DI_KBP10G;Diodes;Si; 1.00kV 1.50A 3.00us Diodes Inc. Bridge -- for one element .MODEL DI_KBP10G D ( IS=39.2u RS=28.1m BV=1.00k IBV=5.00u + CJO=26.5p M=0.333 N=4.38 TT=4.32u ) *SRC=KBP2005G;DI_KBP2005G;Diodes;Si; 50.0V 2.00A 3.00us Diodes Inc. Bridge -- for one element .MODEL DI_KBP2005G D ( IS=143n RS=21.1m BV=50.0 IBV=5.00u + CJO=46.2p M=0.333 N=2.12 TT=4.32u ) *SRC=KBP201G;DI_KBP201G;Diodes;Si; 100V 2.00A 3.00us Diodes Inc. Bridge -- for one element .MODEL DI_KBP201G D ( IS=143n RS=21.1m BV=100 IBV=5.00u + CJO=46.2p M=0.333 N=2.12 TT=4.32u ) *SRC=KBP202G;DI_KBP202G;Diodes;Si; 200V 2.00A 3.00us Diodes Inc. Bridge -- for one element .MODEL DI_KBP202G D ( IS=143n RS=21.1m BV=200 IBV=5.00u + CJO=46.2p M=0.333 N=2.12 TT=4.32u ) *SRC=KBP204G;DI_KBP204G;Diodes;Si; 400V 2.00A 3.00us Diodes Inc. Bridge -- for one element .MODEL DI_KBP204G D ( IS=143n RS=21.1m BV=400 IBV=5.00u + CJO=46.2p M=0.333 N=2.12 TT=4.32u ) *SRC=KBP206G;DI_KBP206G;Diodes;Si; 600V 2.00A 3.00us Diodes Inc. Bridge -- for one element .MODEL DI_KBP206G D ( IS=143n RS=21.1m BV=600 IBV=5.00u + CJO=46.2p M=0.333 N=2.12 TT=4.32u ) *SRC=KBP208G;DI_KBP208G;Diodes;Si; 800V 2.00A 3.00us Diodes Inc. Bridge -- for one element .MODEL DI_KBP208G D ( IS=143n RS=21.1m BV=800 IBV=5.00u + CJO=46.2p M=0.333 N=2.12 TT=4.32u ) *SRC=KBP210G;DI_KBP210G;Diodes;Si; 1.00kV 2.00A 3.00us Diodes Inc. Bridge -- for one element .MODEL DI_KBP210G D ( IS=143n RS=21.1m BV=1.00k IBV=5.00u + CJO=46.2p M=0.333 N=2.12 TT=4.32u ) *SRC=MSB15MH; DI_MSB15MH; Diodes Inc.; Si; 1000V 1.50A Diodes Bridge -- for one element .MODEL DI_MSB15MH D ( IS=1.14457E-09 RS=19m BV=1000 IBV=5.00u + CJO=43.5p M=0.333 N=1.7 TT=4.32u ) *SRC=MSB25MH; DI_MSB25MH; Diodes Inc.; Si; 1000V 2.50A Diodes Bridge -- for one element .MODEL DI_MSB25MH D ( IS=2.3E-10 RS=11.56m BV=1000 IBV=5.00u + CJO=52.5p M=0.333 N=1.7 TT=4.32u ) *SRC=RH02;DI_RH02;Diodes;Si; 200V 0.500A 150ns Diodes Inc. Fast Recovery Bridge Rectifier, per node .MODEL DI_RH02 D ( IS=2.25n RS=0.100 BV=200 IBV=5.00u + CJO=24.0p M=0.333 N=1.70 TT=216n ) *SRC=RH04;DI_RH04;Diodes;Si; 400V 0.500A 150ns Diodes Inc. Fast Recovery Bridge Rectifier, per node .MODEL DI_RH04 D ( IS=2.25n RS=0.100 BV=400 IBV=5.00u + CJO=24.0p M=0.333 N=1.70 TT=216n ) *SRC=RH06;DI_RH06;Diodes;Si; 600V 0.500A 250ns Diodes Inc. Fast Recovery Bridge Rectifier, per node .MODEL DI_RH06 D ( IS=2.25n RS=0.100 BV=600 IBV=5.00u + CJO=24.0p M=0.333 N=1.70 TT=360n )