* DIODES INCORPORATED AND ITS AFFILIATED COMPANIES AND SUBSIDIARIES (COLLECTIVELY, "DIODES") * PROVIDE THESE SPICE MODELS AND DATA (COLLECTIVELY, THE "SM DATA") "AS IS" AND WITHOUT ANY * REPRESENTATIONS OR WARRANTIES, EXPRESS OR IMPLIED, INCLUDING ANY WARRANTY OF MERCHANTABILITY * OR FITNESS FOR A PARTICULAR PURPOSE, ANY WARRANTY ARISING FROM COURSE OF DEALING OR COURSE OF * PERFORMANCE, OR ANY WARRANTY THAT ACCESS TO OR OPERATION OF THE SM DATA WILL BE UNINTERRUPTED, * OR THAT THE SM DATA OR ANY SIMULATION USING THE SM DATA WILL BE ERROR FREE. TO THE MAXIMUM * EXTENT PERMITTED BY LAW, IN NO EVENT WILL DIODES BE LIABLE FOR ANY DIRECT OR INDIRECT, * SPECIAL, INCIDENTAL, PUNITIVE OR CONSEQUENTIAL DAMAGES ARISING OUT OF OR IN CONNECTION WITH * THE PRODUCTION OR USE OF SM DATA, HOWEVER CAUSED AND UNDER WHATEVER CAUSE OF ACTION OR THEORY * OF LIABILITY BROUGHT (INCLUDING, WITHOUT LIMITATION, UNDER ANY CONTRACT, NEGLIGENCE OR OTHER * TORT THEORY OF LIABILITY), EVEN IF DIODES HAS BEEN ADVISED OF THE POSSIBILITY OF SUCH DAMAGES, * AND DIODES' TOTAL LIABILITY (WHETHER IN CONTRACT, TORT OR OTHERWISE) WITH REGARD TO THE SM * DATA WILL NOT, IN THE AGGREGATE, EXCEED ANY SUMS PAID BY YOU TO DIODES FOR THE SM DATA. *SRC=1N5711WS;DI_1N5711WS;Diodes;Si; 70.0V 15.0mA 1.00ns Diodes Inc. .MODEL DI_1N5711WS D ( IS=315n RS=2.80 BV=70.0 IBV=10.0u + CJO=2.00p M=0.333 N=2.03 TT=1.44n ) *SRC=1N6263W;DI_1N6263W;Diodes;Si; 60.0V 15.0mA 1.00ns Diodes Inc. Schottky .MODEL DI_1N6263W D ( IS=1.82u RS=2.80 BV=60.0 IBV=200n + CJO=2.65p M=0.333 N=1.70 TT=1.44n ) *SRC=BAS40;DI_BAS40;Diodes;Si; 40.0V 0.200A 5.00ns Diodes Inc. Schottky diode .MODEL DI_BAS40 D ( IS=6.12u RS=0.120 BV=40.0 IBV=200n + CJO=5.00p M=0.333 N=2.61 TT=7.20n ) * * This model account for one of the two diodes contained in the * BAS40-4 device. The other one is totally identical. * .LIB BAS40_04 * .SUBCKT BAS40_04 A K * D1 A K BAS40_1 D2 A K1 BAS40_2 V1 K1 K DC 217e-3 * .MODEL BAS40_1 D ( +LEVEL = 1 IS = 2.24014e-09 RS = 7.23547 +N = 1.02505 IKF = 0.255776 +CJO = 3.0881e-12 VJ = 119.67e-3 MJ = 183.18e-3 +FC = 0.5 XTI = 0.60541 EG = 0.75453 +TRS1 = 0.00733869 TRS2 = 1.45813e-05 IBV = 0.01 +BV = 40 TT = 6.02e-9 ) * .MODEL BAS40_2 D ( +LEVEL = 1 IS = 5.04958e-11 RS = 0.00692754 +N = 1.10729 XTI = 1.45276 EG = 1.46766 +TRS1 = 0.0021771 TRS2 = 0.000729073 IKF = 0.0102054 +IBV = 0.01 BV = 1e3 TT = 0 ) * .ENDS BAS40_04 * .ENDL BAS40_04 *SRC=BAS40-04T;DI_BAS40-04T;Diodes;Si; 40.0V 0.200A 5.00ns Diodes Inc. Schottky diode, dual, one node of two .MODEL DI_BAS40-04T D ( IS=6.12u RS=0.120 BV=40.0 IBV=200n + CJO=5.00p M=0.333 N=2.61 TT=7.20n ) *SRC=BAS40-05;DI_BAS40-05;Diodes;Si; 40.0V 0.200A 5.00ns Diodes Inc. Schottky diode, dual, one node of two .MODEL DI_BAS40-05 D ( IS=6.12u RS=0.120 BV=40.0 IBV=200n + CJO=5.00p M=0.333 N=2.61 TT=7.20n ) *SRC=BAS40-05T;DI_BAS40-05T;Diodes;Si; 40.0V 0.200A 5.00ns Diodes Inc. Schottky diode, dual, one node of two .MODEL DI_BAS40-05T D ( IS=6.12u RS=0.120 BV=40.0 IBV=200n + CJO=5.00p M=0.333 N=2.61 TT=7.20n ) *SRC=BAS40-06;DI_BAS40-06;Diodes;Si; 40.0V 0.200A 5.00ns Diodes Inc. Schottky diode, dual, one node of two .MODEL DI_BAS40-06 D ( IS=6.12u RS=0.120 BV=40.0 IBV=200n + CJO=5.00p M=0.333 N=2.61 TT=7.20n ) *SRC=BAS40-06T;DI_BAS40-06T;Diodes;Si; 40.0V 0.200A 5.00ns Diodes Inc. Schottky diode, dual, one node of two .MODEL DI_BAS40-06T D ( IS=6.12u RS=0.120 BV=40.0 IBV=200n + CJO=5.00p M=0.333 N=2.61 TT=7.20n ) *SRC=BAS40BRW;DI_BAS40BRW;Diodes;Si; 40.0V 0.200A 5.00ns Diodes Inc. Schottky diode, Quad, one node of four .MODEL DI_BAS40BRW D ( IS=6.12u RS=0.120 BV=40.0 IBV=200n + CJO=5.00p M=0.333 N=2.61 TT=7.20n ) *SRC=BAS40DW-04;DI_BAS40DW-04;Diodes;Si; 40.0V 0.200A 5.00ns Diodes Inc. Schottky diode, Quad, one node of four .MODEL DI_BAS40DW-04 D ( IS=6.12u RS=0.120 BV=40.0 IBV=200n + CJO=5.00p M=0.333 N=2.61 TT=7.20n ) *SRC=BAS40DW-05;DI_BAS40DW-05;Diodes;Si; 40.0V 0.200A 5.00ns Diodes Inc. Schottky diode, Quad, one node of four .MODEL DI_BAS40DW-05 D ( IS=6.12u RS=0.120 BV=40.0 IBV=200n + CJO=5.00p M=0.333 N=2.61 TT=7.20n ) *SRC=BAS40DW-06;DI_BAS40DW-06;Diodes;Si; 40.0V 0.200A 5.00ns Diodes Inc. Schottky diode, Quad, one node of four .MODEL DI_BAS40DW-06 D ( IS=6.12u RS=0.120 BV=40.0 IBV=200n + CJO=5.00p M=0.333 N=2.61 TT=7.20n ) *SRC=BAS40LP;DI_BAS40LP;Diodes;Si; 40.0V 0.200A 5.00ns Diodes Inc Schottky .MODEL DI_BAS40LP D ( IS=2.93u RS=1.29 BV=40.0 IBV=200n + CJO=2.30p M=0.333 N=2.39 TT=7.20n ) *SRC=BAS40T;DI_BAS40T;Diodes;Si; 40.0V 0.200A 5.00ns Diodes Inc. Schottky diode .MODEL DI_BAS40T D ( IS=6.12u RS=0.120 BV=40.0 IBV=200n + CJO=5.00p M=0.333 N=2.61 TT=7.20n ) *SRC=BAS40TW;DI_BAS40TW;Diodes;Si; 40.0V 0.200A 5.00ns Diodes Inc. Schottky diode, Tripple, one node of three .MODEL DI_BAS40TW D ( IS=6.12u RS=0.120 BV=40.0 IBV=200n + CJO=5.00p M=0.333 N=2.61 TT=7.20n ) *SRC=BAS40W;DI_BAS40W;Diodes;Si; 40.0V 0.200A 5.00ns Diodes Inc. Schottky diode .MODEL DI_BAS40W D ( IS=6.12u RS=0.120 BV=40.0 IBV=200n + CJO=5.00p M=0.333 N=2.61 TT=7.20n ) *SRC=BAS40W-04;DI_BAS40W-04;Diodes;Si; 40.0V 0.200A 5.00ns Diodes Inc. Schottky diode, dual, one node of two .MODEL DI_BAS40W-04 D ( IS=6.12u RS=0.120 BV=40.0 IBV=200n + CJO=5.00p M=0.333 N=2.61 TT=7.20n ) *SRC=BAS40W-05;DI_BAS40W-05;Diodes;Si; 40.0V 0.200A 5.00ns Diodes Inc. Schottky diode, dual, one node of two .MODEL DI_BAS40W-05 D ( IS=6.12u RS=0.120 BV=40.0 IBV=200n + CJO=5.00p M=0.333 N=2.61 TT=7.20n ) *SRC=BAS40W-06;DI_BAS40W-06;Diodes;Si; 40.0V 0.200A 5.00ns Diodes Inc. Schottky diode, dual, one node of two .MODEL DI_BAS40W-06 D ( IS=6.12u RS=0.120 BV=40.0 IBV=200n + CJO=5.00p M=0.333 N=2.61 TT=7.20n ) *SRC=BAS70;DI_BAS70;Diodes;Si; 70.0V 70.0mA 5.00ns Diodes Inc. - .MODEL DI_BAS70 D ( IS=99.5p RS=0.600 BV=70.0 IBV=10.0u + CJO=2.00p M=0.333 N=1.70 TT=7.20n ) *SRC=BAS70-04;DI_BAS70-04;Diodes;Si; 70.0V 70.0mA 5.00ns Diodes Inc. Schottky diode, dual, one node of two .MODEL DI_BAS70-04 D ( IS=99.5p RS=0.600 BV=70.0 IBV=10.0u + CJO=2.00p M=0.333 N=1.70 TT=7.20n ) *SRC=BAS70-04T;DI_BAS70-04T;Diodes;Si; 70.0V 70.0mA 5.00ns Diodes Inc. Schottky diode, dual, one node of two .MODEL DI_BAS70-04T D ( IS=99.5p RS=0.600 BV=70.0 IBV=10.0u + CJO=2.00p M=0.333 N=1.70 TT=7.20n ) *SRC=BAS70-05;DI_BAS70-05;Diodes;Si; 70.0V 70.0mA 5.00ns Diodes Inc. Schottky diode, dual, one node of two .MODEL DI_BAS70-05 D ( IS=99.5p RS=0.600 BV=70.0 IBV=10.0u + CJO=2.00p M=0.333 N=1.70 TT=7.20n ) *SRC=BAS70-05T;DI_BAS70-05T;Diodes;Si; 70.0V 70.0mA 5.00ns Diodes Inc. Schottky diode, dual, one node of two .MODEL DI_BAS70-05T D ( IS=99.5p RS=0.600 BV=70.0 IBV=10.0u + CJO=2.00p M=0.333 N=1.70 TT=7.20n ) *SRC=BAS70-06;DI_BAS70-06;Diodes;Si; 70.0V 70.0mA 5.00ns Diodes Inc. Schottky diode, dual, one node of two .MODEL DI_BAS70-06 D ( IS=99.5p RS=0.600 BV=70.0 IBV=10.0u + CJO=2.00p M=0.333 N=1.70 TT=7.20n ) *SRC=BAS70-06T;DI_BAS70-06T;Diodes;Si; 70.0V 70.0mA 5.00ns Diodes Inc. Schottky diode, dual, one node of two .MODEL DI_BAS70-06T D ( IS=99.5p RS=0.600 BV=70.0 IBV=10.0u + CJO=2.00p M=0.333 N=1.70 TT=7.20n ) *SRC=BAS70BRW;DI_BAS70BRW;Diodes;Si; 70.0V 70.0mA 5.00ns Diodes Inc. Schottky diode, quad, one node of four .MODEL DI_BAS70BRW D ( IS=99.5p RS=0.600 BV=70.0 IBV=10.0u + CJO=2.00p M=0.333 N=1.70 TT=7.20n ) *SRC=BAS70DW-04;DI_BAS70DW-04;Diodes;Si; 70.0V 70.0mA 5.00ns Diodes Inc. Schottky diode, quad, one node of four .MODEL DI_BAS70DW-04 D ( IS=99.5p RS=0.600 BV=70.0 IBV=10.0u + CJO=2.00p M=0.333 N=1.70 TT=7.20n ) *SRC=BAS70DW-05;DI_BAS70DW-05;Diodes;Si; 70.0V 70.0mA 5.00ns Diodes Inc. Schottky diode, quad, one node of four .MODEL DI_BAS70DW-05 D ( IS=99.5p RS=0.600 BV=70.0 IBV=10.0u + CJO=2.00p M=0.333 N=1.70 TT=7.20n ) *SRC=BAS70DW-06;DI_BAS70DW-06;Diodes;Si; 70.0V 70.0mA 5.00ns Diodes Inc. Schottky diode, quad, one node of four .MODEL DI_BAS70DW-06 D ( IS=99.5p RS=0.600 BV=70.0 IBV=10.0u + CJO=2.00p M=0.333 N=1.70 TT=7.20n ) *SRC=BAS70JW;DI_BAS70JW;Diodes;Si; 70.0V 70.0mA 5.00ns Diodes Inc. Schottky diode, dual, one node of two .MODEL DI_BAS70JW D ( IS=99.5p RS=0.600 BV=70.0 IBV=10.0u + CJO=2.00p M=0.333 N=1.70 TT=7.20n ) *BAS70LP;Schottky rectifier *SIMULATOR=SIMETRIX *ORIGIN=DZSL_DPG_SU *DATE=11NOV2011 *VERSION=1 .MODEL BAS70LP D ( IS=1.5n RS=14 ISR=3n BV=75 NBV=300 IBV=15n IKF=.4m + CJO=2.04p M=0.19 VJ=.4 N=.99 TT=1.6n EG=.8 XTI=.3 TBV1=.0001 TRS1=.0048) .SIMULATOR DEFAULT *SRC=BAS70T;DI_BAS70T;Diodes;Si; 70.0V 70.0mA 5.00ns Diodes Inc. Schottky diode .MODEL DI_BAS70T D ( IS=99.5p RS=0.600 BV=70.0 IBV=10.0u + CJO=2.00p M=0.333 N=1.70 TT=7.20n ) *SRC=BAS70TW;DI_BAS70TW;Diodes;Si; 70.0V 70.0mA 5.00ns Diodes Inc. Schottky diode, tripple, one node of three .MODEL DI_BAS70TW D ( IS=99.5p RS=0.600 BV=70.0 IBV=10.0u + CJO=2.00p M=0.333 N=1.70 TT=7.20n ) *SRC=BAS70W;DI_BAS70W;Diodes;Si; 70.0V 70.0mA 5.00ns Diodes Inc. Schottky diode .MODEL DI_BAS70W D ( IS=99.5p RS=0.600 BV=70.0 IBV=10.0u + CJO=2.00p M=0.333 N=1.70 TT=7.20n ) *SRC=BAS70W-04;DI_BAS70W-04;Diodes;Si; 70.0V 70.0mA 5.00ns Diodes Inc. Schottky diode, dual, one node of two .MODEL DI_BAS70W-04 D ( IS=99.5p RS=0.600 BV=70.0 IBV=10.0u + CJO=2.00p M=0.333 N=1.70 TT=7.20n ) *SRC=BAS70W-05;DI_BAS70W-05;Diodes;Si; 70.0V 70.0mA 5.00ns Diodes Inc. Schottky diode, dual, one node of two .MODEL DI_BAS70W-05 D ( IS=99.5p RS=0.600 BV=70.0 IBV=10.0u + CJO=2.00p M=0.333 N=1.70 TT=7.20n ) *SRC=BAS70W-06;DI_BAS70W-06;Diodes;Si; 70.0V 70.0mA 5.00ns Diodes Inc. Schottky diode, dual, one node of two .MODEL DI_BAS70W-06 D ( IS=99.5p RS=0.600 BV=70.0 IBV=10.0u + CJO=2.00p M=0.333 N=1.70 TT=7.20n ) *SRC=BAT40V;DI_BAT40V;Diodes;Si; 40.0V 0.200A 5.00ns Diodes Inc. Schottky .MODEL DI_BAT40V D ( IS=82.9n RS=0.373 BV=40.0 IBV=10.0u + CJO=11.9p M=0.333 N=1.14 TT=7.20n ) *SRC=BAT42W;DI_BAT42W;Diodes;Si; 30.0V 0.200A 5.00ns Diodes Inc Schottky Diode .MODEL DI_BAT42W D ( IS=87.5u RS=18.1m BV=30.0 IBV=500n + CJO=8.88p M=0.333 N=3.51 TT=7.20n ) *SRC=BAT42WS;DI_BAT42WS;Diodes;Si; 30.0V 0.200A 5.00ns Diodes Inc Schottky Diode .MODEL DI_BAT42WS D ( IS=87.5u RS=18.1m BV=30.0 IBV=500n + CJO=8.88p M=0.333 N=3.51 TT=7.20n ) *SRC=BAT43W;DI_BAT43W;Diodes;Si; 30.0V 0.200A 5.00ns Diodes Inc Schottky Diode .MODEL DI_BAT43W D ( IS=87.5u RS=18.1m BV=30.0 IBV=500n + CJO=8.88p M=0.333 N=3.51 TT=7.20n ) *SRC=BAT43WS;DI_BAT43WS;Diodes;Si; 30.0V 0.200A 5.00ns Diodes Inc Schottky Diode .MODEL DI_BAT43WS D ( IS=87.5u RS=18.1m BV=30.0 IBV=500n + CJO=8.88p M=0.333 N=3.51 TT=7.20n ) *SRC=BAT46W;DI_BAT46W;Diodes;Si; 100V 0.150A 5.00ns Diodes Inc. Schottky .MODEL DI_BAT46W D ( IS=603n RS=0.280 BV=100 IBV=5.00u + CJO=7.96p M=0.333 N=1.70 TT=7.20n ) *ZETEX BAT54 Spice Model v1.0 Last Revised 25/04/00 * .MODEL BAT54 D Is=649e-9 N=1.04 RS=2.09 IKF=20e-3 +XTI=2 EG=0.58 +CJO=12.4e-12 M=0.381 VJ=0.391 +BV=50 IBV=100e-6 ISR=431e-9 NR=4.99 * *$ * * *Zetex BAT54 Spice Model v1.0 Last Revised 25/04/00 * .MODEL BAT54 D Is=649e-9 N=1.04 RS=2.09 IKF=20e-3 +XTI=2 EG=0.58 +CJO=12.4e-12 M=0.381 VJ=0.391 +BV=50 IBV=100e-6 ISR=431e-9 NR=4.99 * *$ * * (c) 2005 Zetex Semiconductors plc * * The copyright in these models and the designs embodied belong * to Zetex Semiconductors plc (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Zetex PLC, its distributors * or agents. * * Zetex Semiconductors plc, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL *SRC=BAT54A;DI_BAT54A;Diodes;Si; 30.0V 0.200A 5.00ns Diodes Inc. Schottky diode, dual, one node of two .MODEL DI_BAT54A D ( IS=34.9u RS=0.210 BV=30.0 IBV=2.00u + CJO=13.3p M=0.333 N=2.28 TT=7.20n ) *SRC=BAT54ADW;DI_BAT54ADW;Diodes;Si; 30.0V 0.200A 5.00ns Diodes Inc. Schottky diode, quad, one node of four .MODEL DI_BAT54ADW D ( IS=34.9u RS=0.210 BV=30.0 IBV=2.00u + CJO=13.3p M=0.333 N=2.28 TT=7.20n ) *BAT54AQ Spice Model v1.0 Last Revised 12/16/2022 Diodes Inc SUPER BARRIER RECTIFIER SIMULATOR=SPICE3 .MODEL DI_BAT54AQ D ( IS=44.06n RS=1.384m BV=33.0 IBV=10.00 + CJO=13.21p M=348.2m N=1.086 TT=2.168n EG=480.0m VJ=187.5m ) * (c) 2019 Diodes Incorporated * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Diodes "). They are supplied * free of charge by Diodes for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Taiwan Inc.7F.,No. 50,Min-Chuan Road,Hsin-Tien District,New Taipei City 23141, Taiwan *SRC=BAT54AT;DI_BAT54AT;Diodes;Si; 30.0V 0.200A 5.00ns Diodes Inc. Schottky diode, dual, one node of two .MODEL DI_BAT54AT D ( IS=34.9u RS=0.210 BV=30.0 IBV=2.00u + CJO=13.3p M=0.333 N=2.28 TT=7.20n ) *SRC=BAT54AW;DI_BAT54AW;Diodes;Si; 30.0V 0.200A 5.00ns Diodes Inc. Schottky diode, dual, one node of two .MODEL DI_BAT54AW D ( IS=34.9u RS=0.210 BV=30.0 IBV=2.00u + CJO=13.3p M=0.333 N=2.28 TT=7.20n ) *SRC=BAT54BRW;DI_BAT54BRW;Diodes;Si; 30.0V 0.200A 5.00ns Diodes Inc. Schottky diode, quad, one node of four .MODEL DI_BAT54BRW D ( IS=34.9u RS=0.210 BV=30.0 IBV=2.00u + CJO=13.3p M=0.333 N=2.28 TT=7.20n ) *SRC=BAT54C;DI_BAT54C;Diodes;Si; 30.0V 0.200A 5.00ns Diodes Inc. Schottky diode, dual, one node of two .MODEL DI_BAT54C D ( IS=34.9u RS=0.210 BV=30.0 IBV=2.00u + CJO=13.3p M=0.333 N=2.28 TT=7.20n ) *SRC=BAT54CDW;DI_BAT54CDW;Diodes;Si; 30.0V 0.200A 5.00ns Diodes Inc. Schottky diode, quad, one node of four .MODEL DI_BAT54CDW D ( IS=34.9u RS=0.210 BV=30.0 IBV=2.00u + CJO=13.3p M=0.333 N=2.28 TT=7.20n ) *SRC=BAT54CT;DI_BAT54CT;Diodes;Si; 30.0V 0.200A 5.00ns Diodes Inc. Schottky diode, dual, one node of two .MODEL DI_BAT54CT D ( IS=34.9u RS=0.210 BV=30.0 IBV=2.00u + CJO=13.3p M=0.333 N=2.28 TT=7.20n ) *SRC=BAT54CW;DI_BAT54CW;Diodes;Si; 30.0V 0.200A 5.00ns Diodes Inc. Schottky diode, dual, one node of two .MODEL DI_BAT54CW D ( IS=34.9u RS=0.210 BV=30.0 IBV=2.00u + CJO=13.3p M=0.333 N=2.28 TT=7.20n ) ******************************************************************************************************************************************* *SRC=BAT54DW;DI_BAT54DW;Diodes;Si; 30.0V 0.200A 5.00ns Diodes Inc. Schottky, dual, one of two nodes .MODEL DI_BAT54DW D ( IS=235n RS=0.210 BV=30.0 IBV=2.00u + CJO=13.3p M=0.333 N=1.28 TT=7.20n ) ******************************************************************************************************************************************* *SRC=BAT54JW;DI_BAT54JW;Diodes;Si; 30.0V 0.200A 5.00ns Diodes Inc. Schottky diode, dual, one node of two .MODEL DI_BAT54JW D ( IS=34.9u RS=0.210 BV=30.0 IBV=2.00u + CJO=13.3p M=0.333 N=2.28 TT=7.20n ) *BAT54LP Spice Model v1.0 Last Revised 08/04/2014 Diodes Inc SUPER BARRIER RECTIFIER *SIMULATOR=SPICE3 .MODEL DI_BAT54LP D ( IS=98.64n RS=1.080 BV=40.00 IBV=10.00 + CJO=222.3p M=548.8m N=1.140 TT=10.00n EG=480.0m VJ=5.075m ) * (c) 2014 Diodes Incorporated * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Diodes "). They are supplied * free of charge by Diodes for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Taiwan Inc.7F.,No. 50,Min-Chuan Road,Hsin-Tien District,New Taipei City 23141, Taiwan *SRC=BAT54LPS;DI_BAT54LPS;Diodes;Si; 30.0V 0.200A 2.00ns Diodes Inc. SBR/ SKY .MODEL DI_BAT54LPS D ( IS=20.9n RS=0.895 BV=30.0 IBV=2.00u + CJO=10.6p M=0.333 N=1.07 TT=2.88n ) *SRC=BAT54S;DI_BAT54S;Diodes;Si; 30.0V 0.200A 5.00ns Diodes Inc. Schottky diode, dual, one node of two .MODEL DI_BAT54S D ( IS=34.9u RS=0.210 BV=30.0 IBV=2.00u + CJO=13.3p M=0.333 N=2.28 TT=7.20n ) *SRC=BAT54SDW;DI_BAT54SDW;Diodes;Si; 30.0V 0.200A 5.00ns Diodes Inc. Schottky diode, quad, one node of four .MODEL DI_BAT54SDW D ( IS=34.9u RS=0.210 BV=30.0 IBV=2.00u + CJO=13.3p M=0.333 N=2.28 TT=7.20n ) *SRC=BAT54ST;DI_BAT54ST;Diodes;Si; 30.0V 0.200A 5.00ns Diodes Inc. Schottky diode, dual, one node of two .MODEL DI_BAT54ST D ( IS=34.9u RS=0.210 BV=30.0 IBV=2.00u + CJO=13.3p M=0.333 N=2.28 TT=7.20n ) *SRC=BAT54SW;DI_BAT54SW;Diodes;Si; 30.0V 0.200A 5.00ns Diodes Inc. Schottky diode, dual, one node of two .MODEL DI_BAT54SW D ( IS=34.9u RS=0.210 BV=30.0 IBV=2.00u + CJO=13.3p M=0.333 N=2.28 TT=7.20n ) *SRC=BAT54T;DI_BAT54T;Diodes;Si; 30.0V 0.200A 5.00ns Diodes Inc. Schottky diode .MODEL DI_BAT54T D ( IS=34.9u RS=0.210 BV=30.0 IBV=2.00u + CJO=13.3p M=0.333 N=2.28 TT=7.20n ) *SRC=BAT54TW;DI_BAT54TW;Diodes;Si; 30.0V 0.200A 5.00ns Diodes Inc. Schottky diode, tripple, one node of three .MODEL DI_BAT54TW D ( IS=34.9u RS=0.210 BV=30.0 IBV=2.00u + CJO=13.3p M=0.333 N=2.28 TT=7.20n ) *SRC=BAT54V;DI_BAT54V;Diodes;Si; 29.6V 0.200A 5.00ns Diodes Inc. One Element of Dual Schottky Diodes .MODEL DI_BAT54V D ( IS=124n RS=0.210 BV=29.6 IBV=2.00 + CJO=13.3 M=0.333 N=1.19 TT=7.20n ) *SRC=BAT54W;DI_BAT54W;Diodes;Si; 30.0V 0.200A 5.00ns Diodes Inc. Schottky diode .MODEL DI_BAT54W D ( IS=34.9u RS=0.210 BV=30.0 IBV=2.00u + CJO=13.3p M=0.333 N=2.28 TT=7.20n ) *SRC=BAT54WS;DI_BAT54WS;Diodes;Si; 30.0V 0.200A 5.00ns Diodes Inc. Schottky diode .MODEL DI_BAT54WS D ( IS=34.9u RS=0.210 BV=30.0 IBV=2.00u + CJO=13.3p M=0.333 N=2.28 TT=7.20n ) *SRC=PS3S0230;DI_PD3S0230;Diodes;Si; 30.0V 0.200A 2.00ns Diodes INC Schottky Diode .MODEL DI_PD3S0230 D ( IS=400n RS=0.378 BV=30.0 IBV=2.00u + CJO=14.6p M=0.333 N=1.31 TT=2.88n ) ******************************************************************************************************************************************* *SRC=QSBT40;DI_QSBT40;Diodes;Si; 30.0V 0.200A 50.0ns Diodes Inc. Schottky Bus - Single Device of Multiple .MODEL DI_QSBT40 D ( IS=500n RS=0.211 BV=30.0 IBV=2.00u + CJO=10.0p M=0.333 N=1.70 TT=72.0n ) ******************************************************************************************************************************************* *SRC=SD101AW;DI_SD101AW;Diodes;Si; 60.0V 15.0mA 1.00ns Diodes Inc. Schottky .MODEL DI_SD101AW D ( IS=1.82u RS=2.80 BV=60.0 IBV=200n + CJO=2.65p M=0.333 N=1.70 TT=1.44n ) ******************************************************************************************************************************************* *SRC=SD101AWS;DI_SD101AWS;Diodes;Si; 60.0V 15.0mA 1.00ns Diodes Inc. Schottky- SD101AWS/BWS/CWS .MODEL DI_SD101AWS D ( IS=230n RS=2.13 BV=60.0 IBV=200n + CJO=2.00p M=0.333 N=1.96 TT=1.44n ) ******************************************************************************************************************************************* *SRC=SD101BW;DI_SD101BW;Diodes;Si; 50.0V 15.0mA 1.00ns Diodes Inc. Schottky .MODEL DI_SD101BW D ( IS=1.82u RS=2.80 BV=50.0 IBV=200n + CJO=2.65p M=0.333 N=1.70 TT=1.44n ) *SRC=SD101BWS;DI_SD101BWS;Diodes;Si; 50.0V 15.0mA 1.00ns Diodes Inc. Schottky .MODEL DI_SD101BWS D ( IS=1.82u RS=2.80 BV=50.0 IBV=200n + CJO=2.65p M=0.333 N=1.70 TT=1.44n ) *SRC=SD101CW;DI_SD101CW;Diodes;Si; 40.0V 15.0mA 1.00ns Diodes Inc. Schottky .MODEL DI_SD101CW D ( IS=1.82u RS=2.80 BV=40.0 IBV=200n + CJO=2.65p M=0.333 N=1.70 TT=1.44n ) *SRC=SD101CWS;DI_SD101CWS;Diodes;Si; 40.0V 15.0mA 1.00ns Diodes Inc. Schottky .MODEL DI_SD101CWS D ( IS=1.82u RS=2.80 BV=40.0 IBV=200n + CJO=2.65p M=0.333 N=1.70 TT=1.44n ) *SRC=SD103ASDM;DI_SD103ASDM;Diodes;Si; 40.0V 0.350A 10.0ns Diodes Inc. Schottky Barrier Diode, quad, one node of four .MODEL DI_SD103ASDM D ( IS=646n RS=0.120 BV=40.0 IBV=5.00u + CJO=29.2 M=0.333 N=1.28 TT=14.4n ) *SRC=SD103ATW;DI_SD103ATW;Diodes;Si; 40.0V 0.350A 10.0ns Diodes Inc. Schottky Barrier Diode, tripple, one node of three .MODEL DI_SD103ATW D ( IS=646n RS=0.120 BV=40.0 IBV=5.00u + CJO=29.2 M=0.333 N=1.28 TT=14.4n ) *SRC=SD103AW;DI_SD103AW;Diodes;Si; 40.0V 0.350A 10.0ns Diodes Inc. Schottky .MODEL DI_SD103AW D ( IS=8.65u RS=0.120 BV=40.0 IBV=5.00u + CJO=53.0p M=0.333 N=1.70 TT=14.4n ) *SRC=SD103AWS;DI_SD103AWS;Diodes;Si; 40.0V 0.350A 10.0ns Diodes Inc. Schottky .MODEL DI_SD103AWS D ( IS=8.65u RS=0.120 BV=40.0 IBV=5.00u + CJO=53.0p M=0.333 N=1.70 TT=14.4n ) *SRC=SD103BW;DI_SD103BW;Diodes;Si; 30.0V 0.350A 10.0ns Diodes Inc. Schottky .MODEL DI_SD103BW D ( IS=8.65u RS=0.120 BV=30.0 IBV=5.00u + CJO=53.0p M=0.333 N=1.70 TT=14.4n ) *SRC=SD103BWS;DI_SD103BWS;Diodes;Si; 30.0V 0.350A 10.0ns Diodes Inc. Schottky .MODEL DI_SD103BWS D ( IS=8.65u RS=0.120 BV=30.0 IBV=5.00u + CJO=53.0p M=0.333 N=1.70 TT=14.4n ) *SRC=SD103CW;DI_SD103CW;Diodes;Si; 20.0V 0.350A 10.0ns Diodes Inc. Schottky .MODEL DI_SD103CW D ( IS=8.65u RS=0.120 BV=20.0 IBV=5.00u + CJO=53.0p M=0.333 N=1.70 TT=14.4n ) *SRC=SD103CWS;DI_SD103CWS;Diodes;Si; 20.0V 0.350A 10.0ns Diodes Inc. Schottky .MODEL DI_SD103CWS D ( IS=8.65u RS=0.120 BV=20.0 IBV=5.00u + CJO=53.0p M=0.333 N=1.70 TT=14.4n ) *SDM02M30LP3 Spice Model v1.0 Last Revised 8/31/2016 Diodes Inc SUPER BARRIER RECTIFIER SIMULATOR=SPICE3 .MODEL DI_SDM02M30LP3 D ( IS=25.07n RS=444.1p BV=50.00 IBV=10.00 + CJO=45.92p M=357.3m N=285.5 TT=10.00n EG=480.0m VJ=1.309m ) * (c) 2016 Diodes Incorporated * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Diodes "). They are supplied * free of charge by Diodes for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Taiwan Inc.7F.,No. 50,Min-Chuan Road,Hsin-Tien District,New Taipei City 23141, Taiwan *SDM02U30CSP Spice Model v1.0 Last Revised 8/31/2016 Diodes Inc SUPER BARRIER RECTIFIER SIMULATOR=SPICE3 .MODEL DI_SDM02U30CSP D ( IS=276.7n RS=424.6p BV=50.00 IBV=10.00 + CJO=261.8p M=526.0m N=625.2p TT=1.627n EG=480.0m VJ=8.630m ) * (c) 2016 Diodes Incorporated * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Diodes "). They are supplied * free of charge by Diodes for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Taiwan Inc.7F.,No. 50,Min-Chuan Road,Hsin-Tien District,New Taipei City 23141, Taiwan *TITLE=SDM02U30LP3 *DATE=30/08/2016 *ORIGIN=DZSL_DPG_SU *SIMULATOR=SIMETRIX *VERSION=1 .MODEL SDM02U30LP3 D(IS=.22u RS=2.2 BV=33 IBV=110u CJO=6p M=.33 VJ=.4 N=1 ISR=1u IKF=100m TRS1=5m XTI1=3 TT=30n EG=.54 NBV=2) * (c) 2016 Diodes Inc * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL *SRC=SDM03MT40;DI_SDM03MT40;Diodes;Si; 40.0V 0.200A 5.00ns Diodes Inc. Schottky .MODEL DI_SDM03MT40 D ( IS=309u RS=0.210 BV=40.0 IBV=1.00u + CJO=2.65p M=0.333 N=6.81 TT=7.20n ) *SRC=SDM03U40;DI_SDM03U40;Diodes;Si; 30.0V 30.0mA 1.00ns Diodes Inc. Schottky .MODEL DI_SDM03U40 D ( IS=16.5u RS=2.20 BV=30.0 IBV=500n + CJO=2.59p M=0.333 N=2.92 TT=1.44n ) *SRC=SDM10M45SD;DI_SDM10M45SD;Diodes;Si; 45.0V 0.100A 5.00ns Diodes Inc. Schottky .MODEL DI_SDM10M45SD D ( IS=290n RS=0.420 BV=45.0 IBV=1.00u + CJO=10.6p M=0.333 N=1.28 TT=7.20n ) *SRC=SDM10U45;DI_SDM10U45;Diodes;Si; 45.0V 0.100A 2.00ns Diodes Inc. SBR/ SKY .MODEL DI_SDM10U45 D ( IS=7.68u RS=1.32 BV=45.0 IBV=1.00u + CJO=13.3p M=0.333 N=1.81 TT=2.88n ) *SRC=SDM10U45LP;DI_SDM10U45LP;Diodes;Si; 40.0V 0.300A 5.00ns Diodes Inc. Schottky .MODEL DI_SDM10U45LP D ( IS=26.8u RS=0.140 BV=40.0 IBV=1.00u + CJO=10.6p M=0.333 N=2.45 TT=7.20n ) *SRC=SDM20E40C;DI_SDM20E40C;Diodes;Si; 40.0V 0.400A 5.00ns Diodes Inc. Schottky .MODEL DI_SDM20E40C D ( IS=3.15u RS=0.165 BV=40.0 IBV=70.0u + CJO=39.8p M=0.333 N=1.16 TT=7.20n ) *SRC=SDM20N40A;DI_SDM20N40A;Diodes;Si; 40.0V 0.200A 5.00ns Diodes, Inc. Dual Schottky, Model for Single Schottky Only .MODEL DI_SDM20N40A D ( IS=34.0p RS=0.211 BV=40.0 IBV=15.0u + CJO=50.0p M=0.333 N=1.73 TT=7.20n *SRC=SDM20U30;DI_SDM20U30;Diodes;Si; 30.0V 0.200A 5.00ns Diodes Inc. Schottky .MODEL DI_SDM20U30 D ( IS=59.4n RS=0.210 BV=30.0 IBV=150u + CJO=19.9p M=0.333 N=0.700 TT=7.20n ) *SRC=SDM20U30LP;DI_SDM20U30LP;Diodes;Si; 30.0V 0.200A 5.00ns Diodes Inc. Schottky .MODEL DI_SDM20U30LP D ( IS=59.4n RS=0.210 BV=30.0 IBV=150u + CJO=19.9p M=0.333 N=0.700 TT=7.20n ) *SRC=SDM20U40;DI_SDM20U40;Diodes;Si; 40.0V 0.250A 10.0ns Diodes Inc. Schottky .MODEL DI_SDM20U40 D ( IS=4.32u RS=0.168 BV=40.0 IBV=5.00u + CJO=39.8p M=0.333 N=1.70 TT=14.4n ) *SRC=SDM40E20LC;DI_SDM40E20LC;Diodes;Si; 20.0V 0.400A 10.0ns Diodes INC Schottky Diode .MODEL DI_SDM40E20LC D ( IS=2.83m RS=23.0m BV=20.0 IBV=250u + CJO=66.3p M=0.333 N=2.17 TT=14.4n *SRC=SDM40E20LS;DI_SDM40E20LS;Diodes;Si; 20.0V 0.400A 5.00ns Diodes Inc. Schottky .MODEL DI_SDM40E20LS D ( IS=54.8u RS=0.132 BV=20.0 IBV=250u + CJO=199p M=0.333 N=1.34 TT=7.20n ) *SRC=SDMG0340L;DI_SDMG0340L;Diodes;Si; 40.0V 30.0mA 1.00ns Diodes Inc. .MODEL DI_SBMG0340L D ( IS=13.9u RS=2.57 BV=40.0 IBV=10.0u + CJO=2.65p M=0.333 N=2.82 TT=1.44n ) *SRC=SDMG0340LA;DI_SDMG0340LA;Diodes;Si; 40.0V 30.0mA 1.00ns Diodes Inc. Schottky diode, dual, one node of two .MODEL DI_SBMG0340LA D ( IS=13.9u RS=2.57 BV=40.0 IBV=10.0u + CJO=2.65p M=0.333 N=2.82 TT=1.44n ) *SRC=SDMG0340LC;DI_SDMG0340LC;Diodes;Si; 40.0V 30.0mA 1.00ns Diodes Inc. Schottky diode, dual, one node of two .MODEL DI_SBMG0340LC D ( IS=13.9u RS=2.57 BV=40.0 IBV=10.0u + CJO=2.65p M=0.333 N=2.82 TT=1.44n ) *SRC=SDMG0340LS;DI_SDMG0340LS;Diodes;Si; 40.0V 30.0mA 1.00ns Diodes Inc. Schottky diode, dual, one node of two .MODEL DI_SBMG0340LS D ( IS=13.9u RS=2.57 BV=40.0 IBV=10.0u + CJO=2.65p M=0.333 N=2.82 TT=1.44n ) *SRC=SDMK0340L;DI_SDMK0340L;Diodes;Si; 40.0V 30.0mA 3.00us Diodes Inc. Schottky Barrier Diode .MODEL DI_SDMK0340L D ( IS=11.2u RS=3.64 BV=40.0 IBV=500n + CJO=2.65p M=0.333 N=2.69 TT=4.32u ) ****************************************************************************************************************************** *SRC=SDMP0340LAT;DI_SDMP0340LAT;Diodes;Si; 40.0V 30.0mA 5.00ns Diodes Inc. Schottky diode, dual, one node of two .MODEL DI_SDMP0340LAT D ( IS=16.5u RS=2.20 BV=40.0 IBV=1.00u + CJO=2.65p M=0.333 N=2.92 TT=7.20n ) ************************************************************************************************************************************************** *SRC=SDMP0340LCT;DI_SDMP0340LCT;Diodes;Si; 40.0V 30.0mA 5.00ns Diodes Inc. Schottky diode, dual, one node of two .MODEL DI_SDMP0340LCT D ( IS=16.5u RS=2.20 BV=40.0 IBV=1.00u + CJO=2.65p M=0.333 N=2.92 TT=7.20n ) ************************************************************************************************************************************************** *SRC=SDMP0340LST;DI_SDMP0340LST;Diodes;Si; 40.0V 30.0mA 5.00ns Diodes Inc. Schottky diode, dual, one node of two .MODEL DI_SDMP0340LST D ( IS=16.5u RS=2.20 BV=40.0 IBV=1.00u + CJO=2.65p M=0.333 N=2.92 TT=7.20n ) ************************************************************************************************************************************************** *SRC=SDMP0340LT;DI_SDMP0340LT;Diodes;Si; 40.0V 30.0mA 5.00ns Diodes Inc. Schottky .MODEL DI_SDMP0340LT D ( IS=16.5u RS=2.20 BV=40.0 IBV=1.00u + CJO=2.65p M=0.333 N=2.92 TT=7.20n ) *ZETEX ZHCS350 Spice Model v1.0 Last Revised 26/04/2005 * .MODEL ZHCS350 D IS=1.35e-7 N=1.06 ISR=6e-7 NR=1.1 RS=0.9 +IKF=0.2 BV=65 TRS1=6.5e-3 XTI=2 EG=0.63 Fc=0.5 CJO=18.84e-12 +M=0.5 VJ=0.33 TT=1.6e-9 * *$ * *ZETEX ZHCS400 Spice Model v1.0 Last Revised 22/05/02 * .MODEL ZHCS400 D IS=9.1e-8 N=.59 RS=250e-3 IKF=1.37e-3 XTI=2 +EG=.58 CJO=101p M=.5231 VJ=.3905 Fc=.5 BV=60 IBV=100E-6 +ISR=2.2E-6 NR=1.8 * *$ * *ZETEX ZLLS350 Spice Model v2.0 Last revision 24/05/2007 * *This simple model has limitations with respect to temperature *best fit of forward characteristitics with temperature EG=0.63 *best fit of reverse characteristitics with temperature EG=0.85 * .MODEL ZLLS350 D IS=14E-8 N=1.03 ISR=9E-8 NR=2 IKF=0.043 BV=56 IBV=1E-4 +RS=1.2 TT=1e-9 CJO=13.5E-12 VJ=0.6 M=0.33 EG=0.63 XTI=2 TRS1=4E-3 * *$ *