* DIODES INCORPORATED AND ITS AFFILIATED COMPANIES AND SUBSIDIARIES (COLLECTIVELY, "DIODES") * PROVIDE THESE SPICE MODELS AND DATA (COLLECTIVELY, THE "SM DATA") "AS IS" AND WITHOUT ANY * REPRESENTATIONS OR WARRANTIES, EXPRESS OR IMPLIED, INCLUDING ANY WARRANTY OF MERCHANTABILITY * OR FITNESS FOR A PARTICULAR PURPOSE, ANY WARRANTY ARISING FROM COURSE OF DEALING OR COURSE OF * PERFORMANCE, OR ANY WARRANTY THAT ACCESS TO OR OPERATION OF THE SM DATA WILL BE UNINTERRUPTED, * OR THAT THE SM DATA OR ANY SIMULATION USING THE SM DATA WILL BE ERROR FREE. TO THE MAXIMUM * EXTENT PERMITTED BY LAW, IN NO EVENT WILL DIODES BE LIABLE FOR ANY DIRECT OR INDIRECT, * SPECIAL, INCIDENTAL, PUNITIVE OR CONSEQUENTIAL DAMAGES ARISING OUT OF OR IN CONNECTION WITH * THE PRODUCTION OR USE OF SM DATA, HOWEVER CAUSED AND UNDER WHATEVER CAUSE OF ACTION OR THEORY * OF LIABILITY BROUGHT (INCLUDING, WITHOUT LIMITATION, UNDER ANY CONTRACT, NEGLIGENCE OR OTHER * TORT THEORY OF LIABILITY), EVEN IF DIODES HAS BEEN ADVISED OF THE POSSIBILITY OF SUCH DAMAGES, * AND DIODES' TOTAL LIABILITY (WHETHER IN CONTRACT, TORT OR OTHERWISE) WITH REGARD TO THE SM * DATA WILL NOT, IN THE AGGREGATE, EXCEED ANY SUMS PAID BY YOU TO DIODES FOR THE SM DATA. *************************************************************************************************************************************** *SRC=1N4001G;DI_1N4001G;Diodes;Si; 50.0V 1.00A 2.00us Diodes Inc. Glass Passivated Rectifier .MODEL DI_1N4001G D ( IS=65.4p RS=42.2m BV=50.0 IBV=5.00u + CJO=14.8p M=0.333 N=1.36 TT=2.88u ) *************************************************************************************************************************************** *************************************************************************************************************************************** *SRC=1N4002G;DI_1N4002G;Diodes;Si; 100V 1.00A 2.00us Diodes Inc. Glass Passivated Rectifier .MODEL DI_1N4002G D ( IS=65.4p RS=42.2m BV=100 IBV=5.00u + CJO=14.8p M=0.333 N=1.36 TT=2.88u ) *************************************************************************************************************************************** *************************************************************************************************************************************** *SRC=1N4003G;DI_1N4003G;Diodes;Si; 200V 1.00A 2.00us Diodes Inc. Glass Passivated Rectifier .MODEL DI_1N4003G D ( IS=65.4p RS=42.2m BV=200 IBV=5.00u + CJO=14.8p M=0.333 N=1.36 TT=2.88u ) *************************************************************************************************************************************** *************************************************************************************************************************************** *SRC=1N4004G;DI_1N4004G;Diodes;Si; 400V 1.00A 2.00us Diodes Inc. Glass Passivated Rectifier .MODEL DI_1N4004G D ( IS=65.4p RS=42.2m BV=400 IBV=5.00u + CJO=14.8p M=0.333 N=1.36 TT=2.88u ) *************************************************************************************************************************************** *************************************************************************************************************************************** *SRC=1N4005G;DI_1N4005G;Diodes;Si; 600V 1.00A 2.00us Diodes Inc. Glass Passivated Rectifier .MODEL DI_1N4005G D ( IS=65.4p RS=42.2m BV=600 IBV=5.00u + CJO=14.8p M=0.333 N=1.36 TT=2.88u ) *************************************************************************************************************************************** *************************************************************************************************************************************** *SRC=1N4006G;DI_1N4006G;Diodes;Si; 800V 1.00A 2.00us Diodes Inc. Glass Passivated Rectifier .MODEL DI_1N4006G D ( IS=65.4p RS=42.2m BV=800 IBV=5.00u + CJO=14.8p M=0.333 N=1.36 TT=2.88u ) *************************************************************************************************************************************** *************************************************************************************************************************************** *SRC=1N4007G;DI_1N4007G;Diodes;Si; 1.00kV 1.00A 2.00us Diodes Inc. Glass Passivated Rectifier .MODEL DI_1N4007G D ( IS=65.4p RS=42.2m BV=1.00k IBV=5.00u + CJO=14.8p M=0.333 N=1.36 TT=2.88u ) ************************************************************************************************************************************** *SRC=DFLR1200;DI_DFLR1200;Diodes;Si; 200V 1.00A 3.00us Diodes Inc Standard Recovery Rectifier .MODEL DI_DFLR1200 D ( IS=5.90n RS=44.7m BV=200 IBV=3.00u + CJO=18.5p M=0.333 N=1.88 TT=4.32u ) *SRC=DFLR1400;DI_DFLR1400;Diodes;Si; 400V 1.00A 3.00us Diodes Inc Standard Recovery Rectifier .MODEL DI_DFLR1400 D ( IS=5.90n RS=44.7m BV=400 IBV=3.00u + CJO=18.5p M=0.333 N=1.88 TT=4.32u ) *SRC=DFLR1600;DI_DFLR1600;Diodes;Si; 600V 1.00A 3.00us Diodes Inc Standard Recovery Rectifier .MODEL DI_DFLR1600 D ( IS=5.90n RS=44.7m BV=600 IBV=3.00u + CJO=18.5p M=0.333 N=1.88 TT=4.32u ) *SRC=PDR3G;DI_PDR3G;Diodes;Si; 400V 3.00A 3.09us Diodes Inc. Standard Recovery Rectifier .MODEL DI_PDR3G D ( IS=5.82n RS=13.9m BV=400 IBV=10.0u + CJO=38.5p M=0.333 N=1.70 TT=4.45u ) *SRC=PDR5G;DI_PDR5G;Diodes;Si; 400V 5.00A 3.32us Diodes Inc. Standard Recovery Rectifier .MODEL DI_PDR5G D ( IS=8.05n RS=8.40m BV=400 IBV=10.0u + CJO=75.6p M=0.333 N=1.70 TT=4.78u ) *SRC=S1A;DI_S1A;Diodes;Si; 50.0V 1.00A 3.00us Diodes Inc. Rectifier .MODEL DI_S1A D ( IS=7.31e-018 RS=42.0m BV=50.0 IBV=5.00u + CJO=42.4p M=0.333 N=0.775 TT=4.32u ) *SRC=S1AB;DI_S1AB;Diodes;Si; 50.0V 1.00A 3.00us Diodes Inc. Rectifier .MODEL DI_S1AB D ( IS=7.31e-018 RS=42.0m BV=50.0 IBV=5.00u + CJO=42.4p M=0.333 N=0.775 TT=4.32u ) *SRC=S1B;DI_S1B;Diodes;Si; 100V 1.00A 3.00us Diodes Inc. Rectifier .MODEL DI_S1B D ( IS=7.31e-018 RS=42.0m BV=100 IBV=5.00u + CJO=42.4p M=0.333 N=0.775 TT=4.32u ) *SRC=S1BB;DI_S1BB;Diodes;Si; 100V 1.00A 3.00us Diodes Inc. Rectifier .MODEL DI_S1BB D ( IS=7.31e-018 RS=42.0m BV=100 IBV=5.00u + CJO=42.4p M=0.333 N=0.775 TT=4.32u ) *SRC=S1D;DI_S1D;Diodes;Si; 200V 1.00A 3.00us Diodes Inc. Rectifier .MODEL DI_S1D D ( IS=7.31e-018 RS=42.0m BV=200 IBV=5.00u + CJO=42.4p M=0.333 N=0.775 TT=4.32u ) *SRC=S1DB;DI_S1DB;Diodes;Si; 200V 1.00A 3.00us Diodes Inc. Rectifier .MODEL DI_S1DB D ( IS=7.31e-018 RS=42.0m BV=200 IBV=5.00u + CJO=42.4p M=0.333 N=0.775 TT=4.32u ) *TITLE=S1G-13-F *DATE=19/11/2013 *ORIGIN=DZSL_DPG_SU *SIMULATOR=SIMETRIX *VERSION=1 .model S1G-13-F D(IS=.0005n RS=0.03 CJO=17p M=0.5 VJ=0.75 N=1.1 IKF=.15 ISR=.01u + BV=401 IBV=100u TT=150n EG=.95 TRS1=.1m) * (c) 2013 Diodes Inc * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL *SRC=S1GB;DI_S1GB;Diodes;Si; 400V 1.00A 3.00us Diodes Inc. Rectifier .MODEL DI_S1GB D ( IS=7.31e-018 RS=42.0m BV=400 IBV=5.00u + CJO=42.4p M=0.333 N=0.775 TT=4.32u ) *SRC=S1J;DI_S1J;Diodes;Si; 600V 1.00A 3.00us Diodes Inc. Rectifier .MODEL DI_S1J D ( IS=7.31e-018 RS=42.0m BV=600 IBV=5.00u + CJO=42.4p M=0.333 N=0.775 TT=4.32u ) *SRC=S1JB;DI_S1JB;Diodes;Si; 600V 1.00A 3.00us Diodes Inc. Rectifier .MODEL DI_S1JB D ( IS=7.31e-018 RS=42.0m BV=600 IBV=5.00u + CJO=42.4p M=0.333 N=0.775 TT=4.32u ) *SRC=S1K;DI_S1K;Diodes;Si; 800V 1.00A 3.00us Diodes Inc. Rectifier .MODEL DI_S1K D ( IS=7.31e-018 RS=42.0m BV=800 IBV=5.00u + CJO=42.4p M=0.333 N=0.775 TT=4.32u ) *SRC=S1KB;DI_S1KB;Diodes;Si; 800V 1.00A 3.00us Diodes Inc. Rectifier .MODEL DI_S1KB D ( IS=7.31e-018 RS=42.0m BV=800 IBV=5.00u + CJO=42.4p M=0.333 N=0.775 TT=4.32u ) *SRC=S1M;DI_S1M;Diodes;Si; 1.00kV 1.00A 3.00us Diodes Inc. Rectifier .MODEL DI_S1M D ( IS=7.31e-018 RS=42.0m BV=1.00k IBV=5.00u + CJO=42.4p M=0.333 N=0.775 TT=4.32u ) *SRC=S1MB;DI_S1MB;Diodes;Si; 1.00kV 1.00A 3.00us Diodes Inc. Rectifier .MODEL DI_S1MB D ( IS=7.31e-018 RS=42.0m BV=1.00k IBV=5.00u + CJO=42.4p M=0.333 N=0.775 TT=4.32u ) *---------- S1MSWFQ Spice Model ---------- .SUBCKT S1MSWFQ 1 2 * TERMINALS: Anode Cathode D1 1 2 + D1 R1 1 2 3.216E+09 .MODEL D1 D + IS = 4.749E-10 N = 1.667 RS = 0.05177 + CJO = 1.611E-11 VJ = 0.2047 M = 0.2938 + FC = 0.5 + BV = 1174 IBV = 4.441E-10 .ENDS *Diodes_TGI S1MSWFQ Spice Model v1.0 Last Revised 2019/06/12 *SRC=S2A;DI_S2A;Diodes;Si; 50.0V 1.50A 3.00us Diodes Inc. .MODEL DI_S2A D ( IS=1.30u RS=8.92m BV=50.0 IBV=5.00u + CJO=37.0p M=0.333 N=2.58 TT=4.32u ) *SRC=S2AA;DI_S2AA;Diodes;Si; 50.0V 1.50A 3.00us Diodes Inc. .MODEL DI_S2AA D ( IS=1.30u RS=8.92m BV=50.0 IBV=5.00u + CJO=37.0p M=0.333 N=2.58 TT=4.32u ) *SRC=S2B;DI_S2B;Diodes;Si; 100V 1.50A 3.00us Diodes Inc. .MODEL DI_S2B D ( IS=1.30u RS=8.92m BV=100 IBV=5.00u + CJO=37.0p M=0.333 N=2.58 TT=4.32u ) *SRC=S2BA;DI_S2BA;Diodes;Si; 100V 1.50A 3.00us Diodes Inc. .MODEL DI_S2BA D ( IS=1.30u RS=8.92m BV=100 IBV=5.00u + CJO=37.0p M=0.333 N=2.58 TT=4.32u ) *SRC=S2D;DI_S2D;Diodes;Si; 200V 1.50A 3.00us Diodes Inc. .MODEL DI_S2D D ( IS=1.30u RS=8.92m BV=200 IBV=5.00u + CJO=37.0p M=0.333 N=2.58 TT=4.32u ) *SRC=S2DA;DI_S2DA;Diodes;Si; 200V 1.50A 3.00us Diodes Inc. .MODEL DI_S2DA D ( IS=1.30u RS=8.92m BV=200 IBV=5.00u + CJO=37.0p M=0.333 N=2.58 TT=4.32u ) *SRC=S2G;DI_S2G;Diodes;Si; 400V 1.50A 3.00us Diodes Inc. .MODEL DI_S2G D ( IS=1.30u RS=8.92m BV=400 IBV=5.00u + CJO=37.0p M=0.333 N=2.58 TT=4.32u ) *SRC=S2GA;DI_S2GA;Diodes;Si; 400V 1.50A 3.00us Diodes Inc. .MODEL DI_S2GA D ( IS=1.30u RS=8.92m BV=400 IBV=5.00u + CJO=37.0p M=0.333 N=2.58 TT=4.32u ) *SRC=S2J;DI_S2J;Diodes;Si; 600V 1.50A 3.00us Diodes Inc. .MODEL DI_S2J D ( IS=1.30u RS=8.92m BV=600 IBV=5.00u + CJO=37.0p M=0.333 N=2.58 TT=4.32u ) *SRC=S2JA;DI_S2JA;Diodes;Si; 600V 1.50A 3.00us Diodes Inc. .MODEL DI_S2JA D ( IS=1.30u RS=8.92m BV=600 IBV=5.00u + CJO=37.0p M=0.333 N=2.58 TT=4.32u ) *SRC=S2K;DI_S2K;Diodes;Si; 800V 1.50A 3.00us Diodes Inc. .MODEL DI_S2K D ( IS=1.30u RS=8.92m BV=800 IBV=5.00u + CJO=37.0p M=0.333 N=2.58 TT=4.32u ) *SRC=S2KA;DI_S2KA;Diodes;Si; 800V 1.50A 3.00us Diodes Inc. .MODEL DI_S2KA D ( IS=1.30u RS=8.92m BV=800 IBV=5.00u + CJO=37.0p M=0.333 N=2.58 TT=4.32u ) *SRC=S2M;DI_S2M;Diodes;Si; 1.00kV 1.50A 3.00us Diodes Inc. .MODEL DI_S2M D ( IS=1.30u RS=8.92m BV=1.00k IBV=5.00u + CJO=37.0p M=0.333 N=2.58 TT=4.32u ) *SRC=S2MA;DI_S2MA;Diodes;Si; 1.00kV 1.50A 3.00us Diodes Inc. .MODEL DI_S2MA D ( IS=1.30u RS=8.92m BV=1.00k IBV=5.00u + CJO=37.0p M=0.333 N=2.58 TT=4.32u ) *SRC=S3A;DI_S3A;Diodes;Si; 50.0V 3.00A 3.00us Diodes Inc. - .MODEL DI_S3A D ( IS=1.37n RS=14.0m BV=50.0 IBV=10.0u + CJO=74.0p M=0.333 N=1.70 TT=4.32u ) *SRC=S3A;DI_S3A;Diodes;Si; 50.0V 3.00A 3.00us Diodes Inc. - .MODEL DI_S3A D ( IS=1.37n RS=14.0m BV=50.0 IBV=10.0u + CJO=74.0p M=0.333 N=1.70 TT=4.32u ) *SRC=S3BB;S3BB;Diodes;Si; 100V 3.00A 3.00us Diodes Inc. - .MODEL S3BB D ( IS=1.37n RS=14.0m BV=100 IBV=10.0u + CJO=74.0p M=0.333 N=1.70 TT=4.32u ) *SRC=S3BB;S3BB;Diodes;Si; 100V 3.00A 3.00us Diodes Inc. - .MODEL S3BB D ( IS=1.37n RS=14.0m BV=100 IBV=10.0u + CJO=74.0p M=0.333 N=1.70 TT=4.32u ) *SRC=S3D;DI_S3D;Diodes;Si; 200V 3.00A 3.00us Diodes Inc. - .MODEL DI_S3D D ( IS=1.37n RS=14.0m BV=200 IBV=10.0u + CJO=74.0p M=0.333 N=1.70 TT=4.32u ) *SRC=S3DB;DI_S3DB;Diodes;Si; 200V 3.00A 3.00us Diodes Inc. - .MODEL DI_S3DB D ( IS=1.37n RS=14.0m BV=200 IBV=10.0u + CJO=74.0p M=0.333 N=1.70 TT=4.32u ) *SRC=S3GB;DI_S3GB;Diodes;Si; 400V 3.00A 3.00us Diodes Inc. - .MODEL DI_S3GB D ( IS=1.37n RS=14.0m BV=400 IBV=10.0u + CJO=74.0p M=0.333 N=1.70 TT=4.32u ) *SRC=S3GB;DI_S3GB;Diodes;Si; 400V 3.00A 3.00us Diodes Inc. - .MODEL DI_S3GB D ( IS=1.37n RS=14.0m BV=400 IBV=10.0u + CJO=74.0p M=0.333 N=1.70 TT=4.32u ) *SRC=S3K;DI_S3K;Diodes;Si; 800V 3.00A 3.00us Diodes Inc. - .MODEL DI_S3K D ( IS=1.37n RS=14.0m BV=800 IBV=10.0u + CJO=74.0p M=0.333 N=1.70 TT=4.32u ) *SRC=S3K;DI_S3K;Diodes;Si; 800V 3.00A 3.00us Diodes Inc. - .MODEL DI_S3K D ( IS=1.37n RS=14.0m BV=800 IBV=10.0u + CJO=74.0p M=0.333 N=1.70 TT=4.32u ) *SRC=S3M;DI_S3M;Diodes;Si; 1.00kV 3.00A 3.00us Diodes Inc. - .MODEL DI_S3M D ( IS=1.37n RS=14.0m BV=1.00k IBV=10.0u + CJO=74.0p M=0.333 N=1.70 TT=4.32u ) *SRC=S3M;DI_S3M;Diodes;Si; 1.00kV 3.00A 3.00us Diodes Inc. - .MODEL DI_S3M D ( IS=1.37n RS=14.0m BV=1.00k IBV=10.0u + CJO=74.0p M=0.333 N=1.70 TT=4.32u ) *SRC=S5AC;DI_S5AC;Diodes;Si; 50.0V 5.00A 2.00us Diodes Inc. - .MODEL DI_S5AC D ( IS=2.28n RS=8.40m BV=50.0 IBV=10.0u + CJO=74.0p M=0.333 N=1.70 TT=2.88u ) *SRC=S5BC;DI_S5BC;Diodes;Si; 100V 5.00A 2.00us Diodes Inc. - .MODEL DI_S5BC D ( IS=2.28n RS=8.40m BV=100 IBV=10.0u + CJO=74.0p M=0.333 N=1.70 TT=2.88u ) *SRC=S5DC;DI_S5DC;Diodes;Si; 200V 5.00A 2.00us Diodes Inc. - .MODEL DI_S5DC D ( IS=2.28n RS=8.40m BV=200 IBV=10.0u + CJO=74.0p M=0.333 N=1.70 TT=2.88u ) *SRC=S5GC;DI_S5GC;Diodes;Si; 400V 5.00A 2.00us Diodes Inc. .MODEL DI_S5GC D ( IS=2.28n RS=8.40m BV=400 IBV=10.0u + CJO=74.0p M=0.333 N=1.70 TT=2.88u ) *SRC=S5JC;DI_S5JC;Diodes;Si; 600V 5.00A 2.00us Diodes Inc. - .MODEL DI_S5JC D ( IS=2.28n RS=8.40m BV=600 IBV=10.0u + CJO=74.0p M=0.333 N=1.70 TT=2.88u ) *SRC=S5KC;DI_S5KC;Diodes;Si; 800V 5.00A 2.00us Diodes Inc. - .MODEL DI_S5KC D ( IS=2.28n RS=8.40m BV=800 IBV=10.0u + CJO=74.0p M=0.333 N=1.70 TT=2.88u ) *SRC=S5MC;DI_S5MC;Diodes;Si; 1.00kV 5.00A 2.00us Diodes Inc. - .MODEL DI_S5MC D ( IS=2.28n RS=8.40m BV=1.00k IBV=10.0u + CJO=74.0p M=0.333 N=1.70 TT=2.88u ) *SRC=S8KC;S8KC;Diodes;Si; 800V 8.00A 3.00us Diodes Inc .MODEL S8KC D ( IS=777n RS=8.87m BV=800 IBV=10.0u + CJO=74.0p M=0.333 N=1.65 TT=4.32u ) *SRC=S8MC;S8MC;Diodes;Si; 1.00kV 8.00A 3.00us Diodes Inc .MODEL S8MC D ( IS=777n RS=8.87m BV=1.00k IBV=10.0u + CJO=74.0 M=0.333 N=1.65 TT=4.32u