* DIODES INCORPORATED AND ITS AFFILIATED COMPANIES AND SUBSIDIARIES (COLLECTIVELY, "DIODES") * PROVIDE THESE SPICE MODELS AND DATA (COLLECTIVELY, THE "SM DATA") "AS IS" AND WITHOUT ANY * REPRESENTATIONS OR WARRANTIES, EXPRESS OR IMPLIED, INCLUDING ANY WARRANTY OF MERCHANTABILITY * OR FITNESS FOR A PARTICULAR PURPOSE, ANY WARRANTY ARISING FROM COURSE OF DEALING OR COURSE OF * PERFORMANCE, OR ANY WARRANTY THAT ACCESS TO OR OPERATION OF THE SM DATA WILL BE UNINTERRUPTED, * OR THAT THE SM DATA OR ANY SIMULATION USING THE SM DATA WILL BE ERROR FREE. TO THE MAXIMUM * EXTENT PERMITTED BY LAW, IN NO EVENT WILL DIODES BE LIABLE FOR ANY DIRECT OR INDIRECT, * SPECIAL, INCIDENTAL, PUNITIVE OR CONSEQUENTIAL DAMAGES ARISING OUT OF OR IN CONNECTION WITH * THE PRODUCTION OR USE OF SM DATA, HOWEVER CAUSED AND UNDER WHATEVER CAUSE OF ACTION OR THEORY * OF LIABILITY BROUGHT (INCLUDING, WITHOUT LIMITATION, UNDER ANY CONTRACT, NEGLIGENCE OR OTHER * TORT THEORY OF LIABILITY), EVEN IF DIODES HAS BEEN ADVISED OF THE POSSIBILITY OF SUCH DAMAGES, * AND DIODES' TOTAL LIABILITY (WHETHER IN CONTRACT, TORT OR OTHERWISE) WITH REGARD TO THE SM * DATA WILL NOT, IN THE AGGREGATE, EXCEED ANY SUMS PAID BY YOU TO DIODES FOR THE SM DATA. *SRC=1N5817;DI_1N5817;Diodes;Si; 20.0V 1.00A 3.00us Diodes Inc. Schottky Barrier Rectifier .MODEL DI_1N5817 D ( IS=870u RS=81.3m BV=20.0 IBV=1.00m + CJO=203p M=0.333 N=1.81 TT=4.32u ) *SRC=1N5818;DI_1N5818;Diodes;Si; 30.0V 1.00A 3.00us Diodes Inc. Schottky Barrier Rectifier .MODEL DI_1N5818 D ( IS=263u RS=73.1m BV=30.0 IBV=1.00m + CJO=203p M=0.333 N=1.90 TT=4.32u ) *SRC=1N5819;DI_1N5819;Diodes;Si; 40.0V 1.00A 3.00us Diodes Inc. Schottky Barrier Rectifier .MODEL DI_1N5819 D ( IS=390n RS=0.115 BV=40.0 IBV=1.00m + CJO=203p M=0.333 N=1.70 TT=4.32u ) *SRC=1N5819HW;DI_1N5819HW;Diodes;Si; 40.0V 1.00A 5.00ns Diodes Inc. Schottky .MODEL DI_1N5819HW D ( IS=191u RS=42.0m BV=40.0 IBV=1.00m + CJO=239p M=0.333 N=1.70 TT=7.20n ) *SRC=B0520LW;DI_B0520LW;Diodes;Si; 20.0V 0.500A 5.00ns Diodes Inc. Schottky .MODEL DI_B0520LW D ( IS=195u RS=49.4m BV=20.0 IBV=250u + CJO=199p M=0.333 N=1.72 TT=7.20n ) *SRC=B0520WS;DI_B0520WS;Schottky rectifier *SIMULATOR=SIMETRIX *ORIGIN=DZSL_DPG_SU *DATE=7OCT2011 *VERSION=1 .MODEL B0520WS D ( IS=1.5u RS=0.16 ISR=3u BV=22.0 IBV=.5m + CJO=107p M=0.45 VJ=.38 N=0.907 TT=5.6n EG=.69 XTI=.3 TBV1=.0001 TRS1=.0048) .SIMULATOR DEFAULT *SRC=B0530W;DI_B0530W;Diodes;Si; 30.0V 0.500A 5.00ns Diodes Inc. Schottky .MODEL DI_B0530W D ( IS=47.4u RS=26.8m BV=30.0 IBV=130u + CJO=225p M=0.333 N=1.66 TT=7.20n ) *SRC=B0530WS;DI_B0530WS;Diodes;Si; 30.0V 0.500A 10.0ns Diodes Inc. Schottky .MODEL DI_B0530WS D ( IS=897u RS=72.9m BV=30.0 IBV=500u + CJO=79.6p M=0.333 N=2.85 TT=14.4n ) *SRC=B0540W;DI_B0540W;Diodes;Si; 40.0V 0.500A 10.0ns Diodes Inc. Schottky .MODEL DI_B0540W D ( IS=55.9p RS=0.125 BV=40.0 IBV=20.0u + CJO=225p M=0.333 N=0.700 TT=14.4n ) *B0540WS Spice Model v1.0 Last Revised 5/23/2018 Diodes Inc SUPER BARRIER RECTIFIER SIMULATOR=SPICE3 .MODEL DI_B0540WS D ( IS=520.0n RS=130.0m BV=50.00 IBV=10.00 + CJO=150.0p M=400.0m N=1.100 TT=11.65n EG=480.0m VJ=44.67m ) * (c) 2018 Diodes Incorporated * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Diodes "). They are supplied * free of charge by Diodes for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Taiwan Inc.7F.,No. 50,Min-Chuan Road,Hsin-Tien District,New Taipei City 23141, Taiwan *SRC=B1100;DI_B1100;Diodes;Si; 100V 1.00A 5.00ns Diodes Inc. Schottky .MODEL DI_B1100 D ( IS=89.3u RS=42.2m BV=100 IBV=500n + CJO=66.3p M=0.333 N=2.45 TT=7.20n ) *SRC=B1100B;DI_B1100B;Diodes;Si; 100V 1.00A 5.00ns Diodes Inc. Schottky .MODEL DI_B1100B D ( IS=89.3u RS=42.2m BV=100 IBV=500n + CJO=66.3p M=0.333 N=2.45 TT=7.20n ) *SRC=B1100LB;DI_B1100LB;Diodes;Si; 100V 1.00A 10.0ns Diodes Inc. Schottky .MODEL DI_B1100LB D ( IS=20.0n RS=24.7m BV=100 IBV=500n + CJO=225p M=0.333 N=1.22 TT=14.4n ) *SRC=B120;DI_B120;Diodes;Si; 20.0V 1.00A 5.00ns Diodes Inc. Schottky .MODEL DI_B120 D ( IS=39.6u RS=50.2m BV=20.0 IBV=500u + CJO=265p M=0.333 N=1.70 TT=7.20n ) *SRC=B120B;DI_B120B;Diodes;Si; 20.0V 1.00A 5.00ns Diodes Inc. Schottky .MODEL DI_B120B D ( IS=39.6u RS=50.2m BV=20.0 IBV=500u + CJO=265p M=0.333 N=1.70 TT=7.20n ) *SRC=B130;DI_B130;Diodes;Si; 30.0V 1.00A 5.00ns Diodes Inc. Schottky .MODEL DI_B130 D ( IS=39.6u RS=50.2m BV=30.0 IBV=500u + CJO=265p M=0.333 N=1.70 TT=7.20n ) *SRC=B130B;DI_B130B;Diodes;Si; 30.0V 1.00A 5.00ns Diodes Inc. Schottky .MODEL DI_B130B D ( IS=39.6u RS=50.2m BV=30.0 IBV=500u + CJO=265p M=0.333 N=1.70 TT=7.20n ) *SRC=B130L;DI_B130L;Diodes;Si; 30.0V 1.00A 5.00ns Diodes Inc. Schottky .MODEL DI_B130L D ( IS=188u RS=18.5m BV=30.0 IBV=1.00m + CJO=331p M=0.333 N=1.65 TT=7.20n ) *SRC=B130LAW;DI_B130LAW;Diodes;Si; 30.0V 1.00A 5.00ns Diodes Inc. Schottky .MODEL DI_B130LAW D ( IS=407u RS=75.5m BV=30.0 IBV=1.00m + CJO=119p M=0.333 N=1.70 TT=7.20n ) *SRC=B130LB;DI_B130LB;Diodes;Si; 30.0V 1.00A 10.0ns Diodes Inc. Schottky .MODEL DI_B130LB D ( IS=458u RS=28.0m BV=30.0 IBV=1.00m + CJO=159p M=0.333 N=1.70 TT=14.4n ) *SRC=B140;DI_B140;Diodes;Si; 40.0V 1.00A 5.00ns Diodes Inc. Schottky .MODEL DI_B140 D ( IS=39.6u RS=50.2m BV=40.0 IBV=500u + CJO=265p M=0.333 N=1.70 TT=7.20n ) *SRC=B140B;DI_B140B;Diodes;Si; 40.0V 1.00A 5.00ns Diodes Inc. Schottky .MODEL DI_B140B D ( IS=39.6u RS=50.2m BV=40.0 IBV=500u + CJO=265p M=0.333 N=1.70 TT=7.20n ) *SRC=B140HB;DI_B140HB;Diodes;Si; 40.0V 1.00A 10.0ns Diodes Inc. Schottky .MODEL DI_B140HB D ( IS=31.0u RS=42.1m BV=40.0 IBV=1.00m + CJO=159p M=0.333 N=1.70 TT=14.4n ) *SRC=B140HW;DI_B140HW;Diodes;Si; 40.0V 1.00A 11.0ns Diodes Incorporated Schottky diode .MODEL DI_B140HW D ( IS=123n RS=66.4m BV=40.0 IBV=40.0u + CJO=119p M=0.333 N=1.07 TT=15.8n ) *SRC=B150;DI_B150;Diodes;Si; 50.0V 1.00A 5.00ns Diodes Inc. Schottky .MODEL DI_B150 D ( IS=15.7u RS=42.0m BV=50.0 IBV=500u + CJO=133p M=0.333 N=1.70 TT=7.20n ) *SRC=B150B;DI_B150B;Diodes;Si; 50.0V 1.00A 5.00ns Diodes Inc. Schottky .MODEL DI_B150B D ( IS=15.7u RS=42.0m BV=50.0 IBV=500u + CJO=133p M=0.333 N=1.70 TT=7.20n ) *SRC=B160;DI_B160;Diodes;Si; 60.0V 1.00A 5.00ns Diodes Inc. Schottky .MODEL DI_B160 D ( IS=15.7u RS=42.0m BV=60.0 IBV=500u + CJO=133p M=0.333 N=1.70 TT=7.20n ) *SRC=B160B;DI_B160B;Diodes;Si; 60.0V 1.00A 5.00ns Diodes Inc. Schottky .MODEL DI_B160B D ( IS=15.7u RS=42.0m BV=60.0 IBV=500u + CJO=133p M=0.333 N=1.70 TT=7.20n ) *SRC=B170;DI_B170;Diodes;Si; 70.0V 1.00A 5.00ns Diodes Inc. Schottky .MODEL DI_B170 D ( IS=89.3u RS=42.2m BV=70.0 IBV=500n + CJO=66.3p M=0.333 N=2.45 TT=7.20n ) *SRC=B170B;DI_B170B;Diodes;Si; 70.0V 1.00A 5.00ns Diodes Inc. Schottky .MODEL DI_B170B D ( IS=89.3u RS=42.2m BV=70.0 IBV=500n + CJO=66.3p M=0.333 N=2.45 TT=7.20n ) *SRC=B180;DI_B180;Diodes;Si; 80.0V 1.00A 5.00ns Diodes Inc. Schottky .MODEL DI_B180 D ( IS=89.3u RS=42.2m BV=80.0 IBV=500n + CJO=66.3p M=0.333 N=2.45 TT=7.20n ) *SRC=B180B;DI_B180B;Diodes;Si; 80.0V 1.00A 5.00ns Diodes Inc. Schottky .MODEL DI_B180B D ( IS=89.3u RS=42.2m BV=80.0 IBV=500n + CJO=66.3p M=0.333 N=2.45 TT=7.20n ) *SRC=B190;DI_B190;Diodes;Si; 90.0V 1.00A 5.00ns Diodes Inc. Schottky .MODEL DI_B190 D ( IS=89.3u RS=42.2m BV=90.0 IBV=500n + CJO=66.3p M=0.333 N=2.45 TT=7.20n ) *SRC=B190B;DI_B190B;Diodes;Si; 90.0V 1.00A 5.00ns Diodes Inc. Schottky .MODEL DI_B190B D ( IS=89.3u RS=42.2m BV=90.0 IBV=500n + CJO=66.3p M=0.333 N=2.45 TT=7.20n ) *SRC=B2100;DI_B2100;Diodes;Si; 100.0V 2.00A 10.0ns Diodes Inc Schottky .MODEL DI_B2100 D ( IS=746u RS=21.0m BV=100.0 IBV=500u + CJO=179p M=0.333 N=2.87 TT=14.4n ) *SRC=B220;DI_B220;Diodes;Si; 20.0V 2.00A 1.00ns Diodes Inc. .MODEL DI_B220 D ( IS=7.98u RS=13.4m BV=20.0 IBV=500u + CJO=370p M=0.333 N=1.13 TT=1.44n ) *SRC=B220A;DI_B220A;Diodes;Si; 20.0V 2.00A 1.00ns Diodes Inc. .MODEL DI_B220A D ( IS=7.98u RS=13.4m BV=20.0 IBV=500u + CJO=370p M=0.333 N=1.13 TT=1.44n ) *SRC=B230;DI_B230;Diodes;Si; 30.0V 2.00A 1.00ns Diodes Inc. .MODEL DI_B230 D ( IS=7.98u RS=13.4m BV=30.0 IBV=500u + CJO=370p M=0.333 N=1.13 TT=1.44n ) *SRC=B230A;DI_B230A;Diodes;Si; 30.0V 2.00A 1.00ns Diodes Inc. .MODEL DI_B230A D ( IS=7.98u RS=13.4m BV=30.0 IBV=500u + CJO=370p M=0.333 N=1.13 TT=1.44n ) *SRC=B240;DI_B240;Diodes;Si; 40.0V 2.00A 1.00ns Diodes Inc. .MODEL DI_B240 D ( IS=7.98u RS=13.4m BV=40.0 IBV=500u + CJO=370p M=0.333 N=1.13 TT=1.44n ) *SRC=B240A;DI_B240A;Diodes;Si; 40.0V 2.00A 1.00ns Diodes Inc. .MODEL DI_B240A D ( IS=7.98u RS=13.4m BV=40.0 IBV=500u + CJO=370p M=0.333 N=1.13 TT=1.44n ) *SRC=B250;DI_B250;Diodes;Si; 50.0V 2.00A 1.00ns Diodes Inc. .MODEL DI_B250 D ( IS=6.08u RS=14.9m BV=50.0 IBV=500u + CJO=370p M=0.333 N=1.55 TT=1.44n ) *SRC=B250A;DI_B250A;Diodes;Si; 50.0V 2.00A 1.00ns Diodes Inc. .MODEL DI_B250A D ( IS=6.08u RS=14.9m BV=50.0 IBV=500u + CJO=370p M=0.333 N=1.55 TT=1.44n ) *SRC=B260;DI_B260;Diodes;Si; 60.0V 2.00A 1.00ns Diodes Inc. .MODEL DI_B260 D ( IS=6.08u RS=14.9m BV=60.0 IBV=500u + CJO=370p M=0.333 N=1.55 TT=1.44n ) *SRC=B260A;DI_B260A;Diodes;Si; 60.0V 2.00A 1.00ns Diodes Inc. .MODEL DI_B260A D ( IS=6.08u RS=14.9m BV=60.0 IBV=500u + CJO=370p M=0.333 N=1.55 TT=1.44n ) *SRC=B270;DI_B270;Diodes;Si; 70.0V 2.00A 10.0ns Diodes Inc Schottky .MODEL DI_B270 D ( IS=746u RS=21.0m BV=70.0 IBV=500u + CJO=179p M=0.333 N=2.87 TT=14.4n ) *SRC=B280;DI_B280;Diodes;Si; 80.0V 2.00A 10.0ns Diodes Inc Schottky .MODEL DI_B280 D ( IS=746u RS=21.0m BV=80.0 IBV=500u + CJO=179p M=0.333 N=2.87 TT=14.4n ) *SRC=B290;DI_B290;Diodes;Si; 90.0V 2.00A 10.0ns Diodes Inc Schottky .MODEL DI_B290 D ( IS=746u RS=21.0m BV=90.0 IBV=500u + CJO=179p M=0.333 N=2.87 TT=14.4n ) *SRC=B3100;DI_B3100;Diodes;Si; 100V 3.00A 10.0ns Diodes Inc. Schottky .MODEL DI_B3100 D ( IS=916u RS=14.1m BV=100 IBV=500u + CJO=159p M=0.333 N=3.04 TT=14.4n ) *SRC=B320;DI_B320;Diodes;Si; 30.0V 3.00A 5.00ns Diodes Inc. Schottky .MODEL DI_B320 D ( IS=9.90n RS=14.0m BV=30.0 IBV=500u + CJO=464p M=0.333 N=0.775 TT=7.20n ) *SRC=B320A;DI_B320A;Diodes;Si; 30.0V 3.00A 5.00ns Diodes Inc. Schottky .MODEL DI_B320A D ( IS=9.90n RS=14.0m BV=30.0 IBV=500u + CJO=464p M=0.333 N=0.775 TT=7.20n ) *SRC=B320B;DI_B320B;Diodes;Si; 30.0V 3.00A 5.00ns Diodes Inc. Schottky .MODEL DI_B320B D ( IS=9.90n RS=14.0m BV=30.0 IBV=500u + CJO=464p M=0.333 N=0.775 TT=7.20n ) *SRC=B330;DI_B330;Diodes;Si; 30.0V 3.00A 5.00ns Diodes Inc. Schottky .MODEL DI_B330 D ( IS=9.90n RS=14.0m BV=30.0 IBV=500u + CJO=464p M=0.333 N=0.775 TT=7.20n ) *SRC=B330A;DI_B330A;Diodes;Si; 30.0V 3.00A 5.00ns Diodes Inc. Schottky .MODEL DI_B330A D ( IS=9.90n RS=14.0m BV=30.0 IBV=500u + CJO=464p M=0.333 N=0.775 TT=7.20n ) *SRC=B330B;DI_B330B;Diodes;Si; 30.0V 3.00A 5.00ns Diodes Inc. Schottky .MODEL DI_B330B D ( IS=9.90n RS=14.0m BV=30.0 IBV=500u + CJO=464p M=0.333 N=0.775 TT=7.20n ) *SRC=B340;DI_B340;Diodes;Si; 40.0V 3.00A 5.00ns Diodes Inc. Schottky .MODEL DI_B340 D ( IS=9.90n RS=14.0m BV=40.0 IBV=500u + CJO=464p M=0.333 N=0.775 TT=7.20n ) *SRC=B340A;DI_B340A;Diodes;Si; 40.0V 3.00A 5.00ns Diodes Inc. Schottky .MODEL DI_B340A D ( IS=9.90n RS=14.0m BV=40.0 IBV=500u + CJO=464p M=0.333 N=0.775 TT=7.20n ) *SRC=B340B;DI_B340B;Diodes;Si; 40.0V 3.00A 5.00ns Diodes Inc. Schottky .MODEL DI_B340B D ( IS=9.90n RS=14.0m BV=40.0 IBV=500u + CJO=464p M=0.333 N=0.775 TT=7.20n ) *SRC=B340LA;DI_B340LA;Diodes;Si; 40.0V 3.00A 10.0ns Diodes Inc. Schottky .MODEL DI_B340LA D ( IS=1.15m RS=17.8m BV=40.0 IBV=2.00m + CJO=411p M=0.333 N=1.70 TT=14.4n ) *SRC=B340LB;DI_B340LB;Diodes;Si; 40.0V 3.00A 10.0ns Diodes Inc. Schottky .MODEL DI_B340LB D ( IS=1.15m RS=17.8m BV=40.0 IBV=2.00m + CJO=411p M=0.333 N=1.70 TT=14.4n ) *SRC=B350;DI_B350;Diodes;Si; 50.0V 3.00A 5.00ns Diodes Inc. Schottky .MODEL DI_B350 D ( IS=9.90n RS=14.0m BV=50.0 IBV=500u + CJO=464p M=0.333 N=0.775 TT=7.20n ) *SRC=B350A;DI_B350A;Diodes;Si; 50.0V 3.00A 5.00ns Diodes Inc. Schottky .MODEL DI_B350A D ( IS=9.90n RS=14.0m BV=50.0 IBV=500u + CJO=464p M=0.333 N=0.775 TT=7.20n ) *SRC=B350B;DI_B350B;Diodes;Si; 50.0V 3.00A 5.00ns Diodes Inc. Schottky .MODEL DI_B350B D ( IS=9.90n RS=14.0m BV=50.0 IBV=500u + CJO=464p M=0.333 N=0.775 TT=7.20n ) *SRC=B360;DI_B360;Diodes;Si; 60.0V 3.00A 5.00ns Diodes Inc. Schottky .MODEL DI_B360 D ( IS=9.90n RS=14.0m BV=60.0 IBV=500u + CJO=464p M=0.333 N=0.775 TT=7.20n ) *SRC=B360A;DI_B360A;Diodes;Si; 60.0V 3.00A 5.00ns Diodes Inc. Schottky .MODEL DI_B360A D ( IS=9.90n RS=14.0m BV=60.0 IBV=500u + CJO=464p M=0.333 N=0.775 TT=7.20n ) *B360AM-13-F Spice Model v1.0 Last Revised 7/29/2022 Diodes Inc SUPER BARRIER RECTIFIER SIMULATOR=SPICE3 .MODEL DI_B360AM-13-F D ( IS=763.8n RS=40.55m BV=70.00 IBV=10.00 + CJO=433.4p M=470.4m N=1.190 TT=9.984n EG=480.0m VJ=458.3m ) *SRC=B360B;DI_B360B;Diodes;Si; 60.0V 3.00A 5.00ns Diodes Inc. Schottky .MODEL DI_B360B D ( IS=9.90n RS=14.0m BV=60.0 IBV=500u + CJO=464p M=0.333 N=0.775 TT=7.20n ) *SRC=B370;DI_B370;Diodes;Si; 70.0V 3.00A 10.0ns Diodes Inc. Schottky .MODEL DI_B370 D ( IS=916u RS=14.1m BV=70.0 IBV=500u + CJO=159p M=0.333 N=3.04 TT=14.4n ) *SRC=B380;DI_B380;Diodes;Si; 80.0V 3.00A 10.0ns Diodes Inc. Schottky .MODEL DI_B380 D ( IS=916u RS=14.1m BV=80.0 IBV=500u + CJO=159p M=0.333 N=3.04 TT=14.4n ) *SRC=B390;DI_B390;Diodes;Si; 90.0V 3.00A 10.0ns Diodes Inc. Schottky .MODEL DI_B390 D ( IS=916u RS=14.1m BV=90.0 IBV=500u + CJO=159p M=0.333 N=3.04 TT=14.4n ) *SRC=B3L30LP;DI_B3L30LP;Diodes;Si; 30.0V 3.00A 15.0ns Diodes INC Schottky rectifier .MODEL DI_B3L30LP D ( IS=25.1u RS=12.5m BV=30.0 IBV=450u + CJO=517p M=0.333 N=1.03 TT=21.6n ) *SRC=B520C;DI_B520C;Diodes;Si; 20.0V 5.00A 5.00ns Diodes Inc. Schottky .MODEL DI_B520C D ( IS=617u RS=10.0m BV=20.0 IBV=500u + CJO=497p M=0.333 N=1.70 TT=7.20n ) *SRC=B530C;DI_B530C;Diodes;Si; 30.0V 5.00A 5.00ns Diodes Inc. Schottky .MODEL DI_B530C D ( IS=617u RS=10.0m BV=30.0 IBV=500u + CJO=497p M=0.333 N=1.70 TT=7.20n ) .LIB B540C * .MODEL B540C D ( +LEVEL = 1 IS = 1.5672e-06 RS = 0.0209949 +N = 1.01362 IBV = 0.0001 CJO = 8.98694e-10 +VJ = 0.396195 MJ = 0.457747 FC = 0.5 +XTI = 0.000352915 EG = 0.750278 TRS1 = 0.00406277 +TRS2 = 2.17553e-07 BV = 50 TT = 0 ) * .ENDL B540C *SRC=B550C;DI_B550C;Diodes;Si; 50.0V 5.00A 5.00ns Diodes Inc. Schottky .MODEL DI_B550C D ( IS=66.7u RS=14.1m BV=50.0 IBV=500u + CJO=497p M=0.333 N=1.70 TT=7.20n ) *SRC=B560C;DI_B560C;Diodes;Si; 60.0V 5.00A 5.00ns Diodes Inc. Schottky .MODEL DI_B560C D ( IS=66.7u RS=14.1m BV=60.0 IBV=500u + CJO=497p M=0.333 N=1.70 TT=7.20n ) *SRC=BAT1000;DI_BAT1000;Diodes;Si; 40.0V 1.00A 5.00ns Diodes Inc. Schottky Barrier Rectifier .MODEL DI_BAT1000 D ( IS=874n RS=65.3m BV=40.0 IBV=100u + CJO=175p M=0.333 N=0.823 TT=7.20n ) *SRC=BAT400D;DI_BAT400D;Diodes;Si; 40.0V 0.500A 5.00ns Diodes Inc. Schottky .MODEL DI_BAT400D D ( IS=1.80u RS=0.103 BV=40.0 IBV=50.0u + CJO=119p M=0.333 N=1.26 TT=7.20n ) *SRC=BAT750;DI_BAT750;Diodes;Si; 40.0V 0.750A 5.00ns Diodes Inc. Schottky .MODEL DI_BAT750 D ( IS=23.1u RS=82.3m BV=40.0 IBV=100u + CJO=225p M=0.333 N=1.16 TT=7.20n ) .MODEL BAT750 D IS=7E-6 N=0.99 RS=130E-3 IKF=0.15 XTI=2 EG=0.58 + CJO=184.9p M=0.523 VJ=0.3905 Fc=0.5 BV=60 IBV=300E-6 + ISR=4E-6 NR=1.8 * *SRC=BAT760;DI_BAT760;Diodes;Si; 30.0V 1.00A 10.0ns Diodes Inc. Schottky .MODEL DI_BAT760 D ( IS=10.6u RS=49.9m BV=30.0 IBV=50.0u + CJO=49.3p M=0.333 N=1.35 TT=14.4n ) *SRC=DFLS1100;DI_DFLS1100;Diodes;Si; 100V 1.00A 11.0ns Diodes Inc. Schottky Rectifier .MODEL DI_DFLS1100 D ( IS=270n RS=28.3m BV=100 IBV=1.00u + CJO=70.9p M=0.333 N=1.50 TT=15.8n ) *SRC=DFLS1150;DI_DFLS1150;Diodes;Si; 150V 1.00A 14.0ns Diodes Inc. Schottky Rectifier .MODEL DI_DFLS1150 D ( IS=10.2u RS=27.0m BV=150 IBV=2.00u + CJO=55.2p M=0.333 N=2.32 TT=20.2n ) *SRC=DFLS1200;DI_DFLS1200;Diodes;Si; 200V 1.00A 30.0ns Diodes Inc. Schottky .MODEL DI_DFLS1200 D ( IS=64.7u RS=10.3m BV=200 IBV=2.00u + CJO=45.3p M=0.333 N=3.25 TT=43.2n ) *SRC=DFLS120L;DI_DFLS120L;Diodes;Si; 20.0V 1.00A 5.00ns DIODES INC SCHOTTKY RECTIFIER .MODEL DI_DFLS120L D ( IS=21.0u RS=46.3m BV=20.0 IBV=1.00m + CJO=252p M=0.333 N=0.936 TT=7.20n ) *SRC=DFLS130;DI_DFLS130;Diodes;Si; 30.0V 1.00A 5.00ns DIODES INC SCHOTTKY RECTIFIER .MODEL DI_DFLS130 D ( IS=35.5u RS=54.5m BV=30.0 IBV=1.00m + CJO=97.1p M=0.333 N=1.09 TT=7.20n ) *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG_SU *SIMULATOR=SIMETRIX *DATE=10AUG2011 *VERSION=2 * .MODEL DFLS130L D(IS=10U RS=58m N=0.88 BV=30 IBV=0.36m NBV=150 + EG=0.62 ISR=30u CJO=396.4p VJ=0.31 M=0.48 TBV1=-0.007 TRS1=0.0045) *$ *SRC=DFLS140;DI_DFLS140;Diodes;Si; 40.0V 1.10A 5.00ns Diodes Inc Schottky .MODEL DI_DFLS140 D ( IS=163n RS=0.103 BV=40.0 IBV=20.0u + CJO=99.4p M=0.333 N=1.00 TT=7.20n ) *SRC=DFLS140L;DI_DFLS140L;Diodes;Si; 40.0V 1.00A 5.00ns Diodes Inc. Low VF Schottky .MODEL DI_DFLS140L D ( IS=817n RS=32.2m BV=40.0 IBV=500u + CJO=293p M=0.333 N=1.01 TT=7.20n ) *SRC=DFLS160;DI_DFLS160;Diodes;Si; 60.0V 1.00A 10.0ns Diodes Inc. Schottky Rectifier .MODEL DI_DFLS160 D ( IS=736n RS=63.0m BV=60.0 IBV=100u + CJO=163p M=0.333 N=1.01 TT=14.4n ) *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG_SU *SIMULATOR=SIMETRIX *DATE=16/12/2014 *VERSION=1.1 * .SUBCKT DFLS2100 1 2 D1 1 2 Dsch D2 1 2 Dpn .MODEL Dsch D (IS=4n RS=.2 BV=110 IBV=50u CJO=88p M=.4 VJ=.55 N=1.05 IKF=60m TRS1=.006 TT=15n EG=.8) .model Dpn D(IS=1p IKF=100 BV=110 TT=50n EG=1.05 RS=.028 ISR=1n) .ENDS * (c) 2014 Diodes Inc * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL *SRC=DFLS220L;DI_DFLS220L;Diodes;Si; 20.0V 2.00A 5.00ns Diodes Inc. Schottky .MODEL DI_DFLS220L D ( IS=20.3u RS=47.4m BV=20.0 IBV=1.00m + CJO=252p M=0.333 N=0.947 TT=7.20n ) *SRC=DFLS230;DI_DFLS230;Diodes;Si; 30.0V 2.00A 5.00ns Diodes Inc. Schottky .MODEL DI_DFLS230 D ( IS=100u RS=52.2m BV=30.0 IBV=1.00m + CJO=133p M=0.333 N=1.27 TT=7.20n ) *SRC=DFLS230L;DI_DFLS230L;Diodes;Si; 30.0V 2.00A 5.00ns Diodes Inc. Schottky .MODEL DI_DFLS230L D ( IS=125u RS=43.6m BV=30.0 IBV=1.00m + CJO=265p M=0.333 N=1.21 TT=7.20n ) *SRC=DFLS230LH;DI_DFLS230LH;Diodes;Si; 30.0V 1.00A 11.0ns Diodes Inc. Schottky .MODEL DI_DFLS230LH D ( IS=947n RS=32.4m BV=30.0 IBV=200u + CJO=206p M=0.333 N=0.957 TT=15.8n ) *SRC=DFLS240L;DI_DFLS240L;Diodes;Si; 40.0V 2.00A 5.00ns Diodes Inc. Schottky .MODEL DI_DFLS240L D ( IS=516n RS=31.4m BV=40.0 IBV=500u + CJO=292p M=0.333 N=0.911 TT=7.20n ) *DFLS260 Spice Model v1.0 Last Revised 3/21/2017 Diodes Inc SUPER BARRIER RECTIFIER SIMULATOR=SPICE3 .MODEL DI_DFLS260 D ( IS=721.4n RS=80.00m BV=60.00 IBV=10.00 + CJO=320.8p M=450.7m N=1.029 TT=10.00n EG=480.0m VJ=292.4m ) * (c) 2017 Diodes Incorporated * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Diodes "). They are supplied * free of charge by Diodes for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Taiwan Inc.7F.,No. 50,Min-Chuan Road,Hsin-Tien District,New Taipei City 23141, Taiwan *SRC=MBR1035;DI_MBR1035;Diodes;Si; 35.0V 10.0A 5.00ns Diodes Inc. Schottky Barrier Rectifier .MODEL DI_MBR1035 D ( IS=2.62m RS=4.20m BV=35.0 IBV=100u + CJO=796p M=0.333 N=2.12 TT=7.20n ) *SRC=MBR1040;DI_MBR1040;Diodes;Si; 40.0V 10.0A 5.00ns Diodes Inc. Schottky Barrier Rectifier .MODEL DI_MBR1040 D ( IS=2.62m RS=4.20m BV=40.0 IBV=100u + CJO=796p M=0.333 N=2.12 TT=7.20n ) *SRC=MBR1045;DI_MBR1045;Diodes;Si; 45.0V 10.0A 5.00ns Diodes Inc. Schottky Barrier Rectifier .MODEL DI_MBR1045 D ( IS=2.62m RS=4.20m BV=45.0 IBV=100u + CJO=796p M=0.333 N=2.12 TT=7.20n ) *SRC=MBR1045CT;DI_MBR1045CT;Diodes;Si; 45.0V 10.0A 10.0ns Diodes Inc. Schottky - Single device of dual .MODEL DI_MBR1045CT D ( IS=4.25u RS=13.0m BV=45.0 IBV=100u + CJO=318p M=0.333 N=1.15 TT=14.4n ) *SRC=MBR1050;DI_MBR1050;Diodes;Si; 50.0V 10.0A 5.00ns Diodes Inc. Schottky Barrier Rectifier .MODEL DI_MBR1050 D ( IS=153u RS=3.17m BV=50.0 IBV=100u + CJO=796p M=0.333 N=1.96 TT=7.20n ) *SRC=MBR1060;DI_MBR1060;Diodes;Si; 60.0V 10.0A 5.00ns Diodes Inc. Schottky Barrier Rectifier .MODEL DI_MBR1060 D ( IS=153u RS=3.17m BV=60.0 IBV=100u + CJO=796p M=0.333 N=1.96 TT=7.20n ) *SRC=MBR1530CT;DI_MBR1530CT;Diodes;Si; 30.0V 15.0A 5.00ns Diodes Inc. Schottky - One element of device .MODEL DI_MBR1530CT D ( IS=344u RS=2.81m BV=30.0 IBV=25.0u + CJO=530p M=0.333 N=2.28 TT=7.20n ) *SRC=MBR1535CT;DI_MBR1535CT;Diodes;Si; 35.0V 15.0A 5.00ns Diodes Inc. Schottky - One element of device .MODEL DI_MBR1535CT D ( IS=344u RS=2.81m BV=35.0 IBV=25.0u + CJO=530p M=0.333 N=2.28 TT=7.20n ) *SRC=MBR1540CT;DI_MBR1540CT;Diodes;Si; 40.0V 15.0A 5.00ns Diodes Inc. Schottky - One element of device .MODEL DI_MBR1540CT D ( IS=344u RS=2.81m BV=40.0 IBV=25.0u + CJO=530p M=0.333 N=2.28 TT=7.20n ) *SRC=MBR1550CT;DI_MBR1550CT;Diodes;Si; 50.0V 15.0A 5.00ns Diodes Inc. Schottky - One element of device .MODEL DI_MBR1550CT D ( IS=11.3u RS=2.64m BV=50.0 IBV=25.0u + CJO=530p M=0.333 N=1.87 TT=7.20n ) *SRC=MBR1560CT;DI_MBR1560CT;Diodes;Si; 60.0V 15.0A 5.00ns Diodes Inc. Schottky - One element of device .MODEL DI_MBR1560CT D ( IS=11.3u RS=2.64m BV=60.0 IBV=25.0u + CJO=530p M=0.333 N=1.87 TT=7.20n ) *SRC=MBR2040CT;DI_MBR2040CT;Diodes;Si; 40.0V 20.0A 1.00ns Diodes Inc. Schottky - One element of device .MODEL DI_MBR2040CT D ( IS=98.9u RS=2.11m BV=40.0 IBV=60.0u + CJO=994p M=0.333 N=1.70 TT=1.44n ) *MBR230S1F Spice Model v1.0 Last Revised 4/3/209 Diodes Inc SUPER BARRIER RECTIFIER SIMULATOR=SPICE3 .MODEL DI_SMBR230S1F D ( IS=22.00u RS=29.65m BV=40.00 IBV=10.00 + CJO=409.0p M=469.1m N=1.012 TT=10.00n EG=480.0m VJ=287.2m ) * (c) 2019 Diodes Incorporated * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Diodes "). They are supplied * free of charge by Diodes for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Taiwan Inc.7F.,No. 50,Min-Chuan Road,Hsin-Tien District,New Taipei City 23141, Taiwan *SRC=MBRB1540CT;DI_MBRB1540CT;Diodes;Si; 40.0V 15.0A 30.0ns Diodes Inc. Schottky -- one element of device .MODEL DI_MBRB1540CT D ( IS=71.5u RS=2.81m BV=40.0 IBV=100u + CJO=464p M=0.333 N=1.61 TT=43.2n ) *SRC=PD3S120L;DI_PD3S120L;Diodes;Si; 20.0V 1.00A 18.0ns Diodes INC Schottky rectifier .MODEL DI_PD3S120L D ( IS=4.60u RS=41.2m BV=20.0 IBV=70.0u + CJO=112p M=0.333 N=1.03 TT=25.9n ) *SRC=PS3S130H;DI_PD3S130H;Diodes;Si; 30.0V 1.00A 17.5ns Diodes INC Schottky rectifier .MODEL DI_PD3S130H D ( IS=425n RS=67.9m BV=30.0 IBV=100u + CJO=97.1p M=0.333 N=1.07 TT=25.2n ) *SRC=PS3S130L;DI_PD3S130L;Diodes;Si; 30.0V 1.00A 21.5ns Diodes INC Schottky rectifier .MODEL DI_PD3S130L D ( IS=6.92u RS=35.0m BV=30.0 IBV=1.50m + CJO=97.1p M=0.333 N=0.953 TT=31.0n ) *SRC=PS3S140;DI_PD3S140;Diodes;Si; 40.0V 1.00A 27.0ns Diodes INC Schottky rectifier .MODEL DI_PD3S140 D ( IS=91.2n RS=62.2m BV=40.0 IBV=50.0u + CJO=77.7p M=0.333 N=0.996 TT=38.9n ) *SRC=PS3S160;DI_PD3S160;Diodes;Si; 60.0V 1.00A 13.0ns Diodes INC Schottky rectifier .MODEL DI_PD3S160 D ( IS=82.7n RS=57.6m BV=60.0 IBV=100u + CJO=92.2p M=0.333 N=1.09 TT=18.7n ) * *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG *SIMULATOR=PSPICE *DATE=13/10/2009 *VERSION=1 * .MODEL PD3S230L D IS=1.07E-5 N=1 ISR=7E-6 NR=1 BV=33 + IBV=1E-4 NBV=5 IBVL=6E-6 NBVL=200 RS=0.035 CJO=220E-12 + VJ=0.33 M=0.40 EG=0.6 XTI=2 TRS1=6E-3 * *$ *SRC=PDS1040;DI_PDS1040;Diodes;Si; 40.0V 10.0A 10.0ns Diodes Inc. Schottky .MODEL DI_PDS1040 D ( IS=2.78u RS=2.78m BV=40.0 IBV=700u + CJO=1.72n M=0.333 N=1.05 TT=14.4n ) *SRC=PDS1040CTL;Di_PDS1040CTL;Diodes;Si; 40.0V 10.0A 20.0ns Diodes Inc. 10A Dual Low VF Schottky Barrier Rectifier Per Node .MODEL Di_PDS1040CTL D ( IS=21.5u RS=4.20m BV=40.0 IBV=200u + CJO=789p M=0.333 N=1.28 TT=28.8n ) *SRC=PDS1040L;Di_PDS1040L;Diodes;Si; 40.0V 10.0A 35.0ns Diodes Inc. 10A Low VF Schottky Barrier Rectifier .MODEL Di_PDS1040L D ( IS=6.02u RS=4.20m BV=40.0 IBV=600u + CJO=2.21n M=0.333 N=1.04 TT=50.4n ) *SRC=PDS1045;Di_PDS1045;Diodes;Si; 45.0V 10.0A 31.1ns Diodes Inc. 10A Schottky Barrier Rectifier .MODEL Di_PDS1045 D ( IS=17.0u RS=4.20m BV=45.0 IBV=600u + CJO=2.25n M=0.333 N=1.11 TT=44.8n ) *SRC=PDS3100;DI_PDS3100;Diodes;Si; 100V 3.00A 10.0ns Diodes Inc. 3A HV Schottky Barrier Rectifier .MODEL DI_PDS3100 D ( IS=20.9u RS=13.9m BV=100 IBV=200u + CJO=305p M=0.333 N=1.70 TT=14.4n ) *DIODES_INC_SPICE_MODEL_PDS3200 *ORIGIN=DZSL_DPG_SU *SIMULATOR=PSPICE *DATE=30/06/2014 *VERSION=1 .MODEL PDS3200 D (IS=10E-9 RS=0.026 ISR=.1u BV=202.0 IBV=1u + CJO=500p M=0.4 VJ=.55 N=1 IKF=.09 EG=.95 XTI=1.5 TT=30n) * (c) 2014 Diodes Inc * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL * *SRC=PDS340;DI_PDS340;Diodes;Si; 40.0V 3.00A 13.0ns Diodes Inc. Schottky .MODEL DI_PDS340 D ( IS=2.59u RS=13.5m BV=40.0 IBV=500u + CJO=630p M=0.333 N=1.11 TT=18.7n ) * *Zetex PDS360 Spice Model v1.0 Last Revised 20/02/09 * .MODEL PDS360 D IS=0.7E-7 N=1.02 ISR=0.94E-7 NR=1.1 BV=63 IBV=2E-4 + NBV=2 IBVL=8E-8 NBVL=300 RS=0.034 CJO=390E-12 VJ=1.1 M=0.53 + EG=0.74 XTI=2 TRS1=4e-3 * *$ * * (c) 2009 Diodes Incorporated * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Diodes "). They are supplied * free of charge by Diodes for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Incorporated, 1566 N. Dallas Parkway, Suite 850, Dallas, TX 75248, USA *SRC=PDS4150;DI_PDS4150;Diodes;Si; 150V 4.00A 15.0ns Diodes Inc. 4A HV Schottky Barrier Rectifier .MODEL DI_PDS4150 D ( IS=19.2u RS=5.66m BV=150 IBV=10.0u + CJO=630p M=0.333 N=1.89 TT=21.6n ) *SRC=PDS5100;DI_PDS5100;Diodes;Si; 100V 5.00A 15.0ns Diodes Inc. 5A Schottky Barrier Rectifier .MODEL DI_PDS5100 D ( IS=49.0u RS=7.63m BV=100 IBV=200u + CJO=375p M=0.333 N=1.84 TT=21.6n ) *PDS5100H Spice Model v2.0 Last Revised 05/12/2014 Diodes Inc SCHOTTKY BARRIER RECTIFIER *SIMULATOR=SPICE3 .MODEL PDS5100H D ( IS=9.000n RS=18.00m BV=105.0 IBV=36.54u + CJO=836.0p M=450.0m N=970.0m TT=18.50n EG=800.0m VJ=450.0m XTI=1.500 ) * (c) 2014 Diodes Incorporated * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Diodes "). They are supplied * free of charge by Diodes for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Taiwan Inc.7F.,No. 50,Min-Chuan Road,Hsin-Tien District,New Taipei City 23141, Taiwan *SRC=PDS540;DI_PDS540;Diodes;Si; 40.0V 5.00A 15.0ns Diodes Inc. 5A Schottky Barrier Rectifier .MODEL DI_PDS540 D ( IS=9.59u RS=10.7m BV=40.0 IBV=300u + CJO=727p M=0.333 N=1.26 TT=21.6n ) *DIODES_INC_SPICE_MODEL_PDS560 *ORIGIN=DZSL_DPG_SU *SIMULATOR=PSPICE *DATE=4/08/2014 *VERSION=1 .MODEL PDS560 D (IS=18E-8 RS=0.018 ISR=20E-8 BV=60.0 IBV=1u + CJO=500p M=0.4 VJ=.4 N=.97 IKF=.35 EG=.69 XTI=1.5 NR=1.2 TT=20n) * (c) 2014 Diodes Inc * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL * * *Zetex PDS760 Spice Model v1.0 Last Revised 24/02/09 * .MODEL PDS760 D IS=2.1E-7 N=1.02 ISR=2.6E-7 NR=1.1 BV=63 IBV=2E-4 + NBV=2 IBVL=5.5E-7 NBVL=350 RS=0.016 CJO=1060E-12 VJ=1.1 M=0.53 + EG=0.74 XTI=2 TRS1=4e-3 * *$ * * (c) 2009 Diodes Incorporated * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Diodes "). They are supplied * free of charge by Diodes for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Incorporated, 1566 N. Dallas Parkway, Suite 850, Dallas, TX 75248, USA *SRC=PDS835L;DI_PDS835L;Diodes;Si; 35.0V 8.00A 15.0ns Diodes Inc. 8A Low VF Schottky Barrier Rectifier .MODEL DI_PDS835L D ( IS=42.9u RS=6.30m BV=35.0 IBV=1.40m + CJO=623p M=0.333 N=1.43 TT=21.6n ) *SRC=SB120;DI_SB120;Diodes;Si; 20.0V 1.00A 5.00ns Diodes Inc. Schottky .MODEL DI_SB120 D ( IS=31.5u RS=49.2m BV=20.0 IBV=500u + CJO=239p M=0.333 N=1.70 TT=7.20n ) *SRC=SB130;DI_SB130;Diodes;Si; 30.0V 1.00A 5.00ns Diodes Inc. Schottky .MODEL DI_SB130 D ( IS=31.5u RS=49.2m BV=30.0 IBV=500u + CJO=239p M=0.333 N=1.70 TT=7.20n ) *SRC=SB140;DI_SB140;Diodes;Si; 40.0V 1.00A 5.00ns Diodes Inc. Schottky .MODEL DI_SB140 D ( IS=31.5u RS=49.2m BV=40.0 IBV=500u + CJO=239p M=0.333 N=1.70 TT=7.20n ) *SRC=SB150;DI_SB150;Diodes;Si; 50.0V 1.00A 5.00ns Diodes Inc. Schottky .MODEL DI_SB150 D ( IS=1.17u RS=42.0m BV=50.0 IBV=500u + CJO=172p M=0.333 N=1.28 TT=7.20n ) *SRC=SB160;DI_SB160;Diodes;Si; 60.0V 1.00A 5.00ns Diodes Inc. Schottky .MODEL DI_SB160 D ( IS=1.17u RS=42.0m BV=60.0 IBV=500u + CJO=172p M=0.333 N=1.28 TT=7.20n ) *SRC=SB170;DI_SB170;Diodes;Si; 70.0V 1.00A 5.00ns Diodes Inc. Schottky .MODEL DI_SB170 D ( IS=6.63u RS=62.3m BV=70.0 IBV=500u + CJO=199p M=0.333 N=1.70 TT=7.20n ) *SRC=SB180;DI_SB180;Diodes;Si; 80.0V 1.00A 5.00ns Diodes Inc. Schottky .MODEL DI_SB180 D ( IS=6.63u RS=62.3m BV=80.0 IBV=500u + CJO=199p M=0.333 N=1.70 TT=7.20n ) *SRC=SB190;DI_SB190;Diodes;Si; 90.0V 1.00A 5.00ns Diodes Inc. Schottky .MODEL DI_SB190 D ( IS=6.63u RS=62.3m BV=90.0 IBV=500u + CJO=199p M=0.333 N=1.70 TT=7.20n ) *SRC=SB340;DI_SB340;Diodes;Si; 40.0V 3.00A 5.00ns Diodes Inc. Schottky .MODEL DI_SB340 D ( IS=85.9n RS=18.5m BV=40.0 IBV=70.0u + CJO=411p M=0.333 N=0.754 TT=7.20n ) *SRC=SBL1630PT;DI_SBL1630PT;Diodes;Si; 30.0V 16.0A 5.00ns Diodes Inc. Schottky - Single device of dual .MODEL DI_SBL1630PT D ( IS=575u RS=3.47m BV=30.0 IBV=500u + CJO=1.86n M=0.333 N=1.68 TT=7.20n ) *SRC=SBL1635PT;DI_SBL1635PT;Diodes;Si; 35.0V 16.0A 5.00ns Diodes Inc. Schottky - Single device of dual .MODEL DI_SBL1635PT D ( IS=575u RS=3.47m BV=35.0 IBV=500u + CJO=1.86n M=0.333 N=1.68 TT=7.20n ) *SRC=SBL1645PT;DI_SBL1645PT;Diodes;Si; 45.0V 16.0A 5.00ns Diodes Inc. Schottky - Single device of dual .MODEL DI_SBL1645PT D ( IS=575u RS=3.47m BV=45.0 IBV=500u + CJO=1.86n M=0.333 N=1.68 TT=7.20n ) *SRC=SBL1660PT;DI_SBL1660PT;Diodes;Si; 60.0V 16.0A 5.00ns Diodes Inc. Schottky - Single device of dual .MODEL DI_SBL1660PT D ( IS=89.9u RS=3.60m BV=60.0 IBV=500u + CJO=1.86n M=0.333 N=1.67 TT=7.20n ) *SRC=SBL2040CT;DI_SBL2040CT;Diodes;Si; 40.0V 20.0A 10.0ns Diodes Inc. Schottky - Single device of dual .MODEL DI_SBL2040CT D ( IS=4.83m RS=2.37m BV=40.0 IBV=1.00m + CJO=1.34n M=0.333 N=2.28 TT=14.4n ) *SRC=SBL2045CT;DI_SBL2045CT;Diodes;Si; 45.0V 20.0A 10.0ns Diodes Inc. Schottky - Single device of dual .MODEL DI_SBL2045CT D ( IS=4.83m RS=2.37m BV=45.0 IBV=1.00m + CJO=1.34n M=0.333 N=2.28 TT=14.4n ) *SRC=SBL2050CT;DI_SBL2050CT;Diodes;Si; 50.0V 20.0A 10.0ns Diodes Inc. Schottky - Single device of dual .MODEL DI_SBL2050CT D ( IS=3.50m RS=2.11m BV=50.0 IBV=1.00m + CJO=1.34n M=0.333 N=2.95 TT=14.4n ) *SRC=SBL30L30CT;DI_SBL30L30CT;Diodes;Si; 30.0V 30.0A 50.0ns Diodes INC Schottky Rectifier .MODEL DI_SBL30L30CT D ( IS=60.6u RS=2.64m BV=30.0 IBV=1.50m + CJO=3.05u M=0.333 N=1.22 TT=72.0n *SRC=SBL535;DI_SBL535;Diodes;Si; 35.0V 5.00A 10.0ns Diodes Inc. Schottky .MODEL DI_SBL535 D ( IS=926u RS=9.47m BV=35.0 IBV=500u + CJO=968p M=0.333 N=1.69 TT=14.4n ) *SRC=SBL540;DI_SBL540;Diodes;Si; 40.0V 5.00A 10.0ns Diodes Inc. Schottky .MODEL DI_SBL540 D ( IS=926u RS=9.47m BV=40.0 IBV=500u + CJO=968p M=0.333 N=1.69 TT=14.4n ) *SRC=SBL545;DI_SBL545;Diodes;Si; 45.0V 5.00A 10.0ns Diodes Inc. Schottky .MODEL DI_SBL545 D ( IS=926u RS=9.47m BV=45.0 IBV=500u + CJO=968p M=0.333 N=1.69 TT=14.4n ) *SRC=SBL550;DI_SBL550;Diodes;Si; 50.0V 5.00A 10.0ns Diodes Inc. Schottky .MODEL DI_SBL550 D ( IS=14.0u RS=8.33m BV=50.0 IBV=500u + CJO=968p M=0.333 N=1.70 TT=14.4n ) *SRC=SBL560;DI_SBL560;Diodes;Si; 60.0V 5.00A 10.0ns Diodes Inc. Schottky .MODEL DI_SBL560 D ( IS=14.0u RS=8.33m BV=60.0 IBV=500u + CJO=968p M=0.333 N=1.70 TT=14.4n ) *SRC=SBL6030PT;DI_SBL6030PT;Diodes;Si; 30.0V 60.0A 10.0ns Diodes Inc. Schottky - Single device of dual .MODEL DI_SBL6030PT D ( IS=1.93m RS=917u BV=30.0 IBV=20.0m + CJO=3.25n M=0.333 N=1.68 TT=14.4n ) *SRC=SBL6050PT;DI_SBL6050PT;Diodes;Si; 50.0V 60.0A 10.0ns Diodes Inc. Schottky - Single device of dual .MODEL DI_SBL6050PT D ( IS=353u RS=909u BV=50.0 IBV=20.0m + CJO=3.25n M=0.333 N=1.76 TT=14.4n ) *SRC=SBL6060PT;DI_SBL6060PT;Diodes;Si; 60.0V 60.0A 10.0ns Diodes Inc. Schottky - Single device of dual .MODEL DI_SBL6060PT D ( IS=353u RS=909u BV=60.0 IBV=20.0m + CJO=3.25n M=0.333 N=1.76 TT=14.4n ) *SDM05A30CP3 Spice Model v1.0 Last Revised 10/18/2022 Diodes Inc SUPER BARRIER RECTIFIER SIMULATOR=SPICE3 .MODEL DI_SDM05A30CP3 D ( IS=159.2n RS=319.8m BV=33.0 IBV=10.00 + CJO=82.04p M=294.4m N=1.092 TT=4.096n EG=480.0m VJ=3.281m ) *SRC=SDM100K30L;DI_SDM100K30L;Diodes;Si; 30.0V 1.00A 10.0ns Diodes Inc. Schottky Barrier Rectifier .MODEL DI_SDM100K30L D ( IS=255n RS=0.108 BV=30.0 IBV=100u + CJO=53.4p M=0.333 N=0.927 TT=14.4n ) *SDM1100S1F Spice Model v1.0 Last Revised 1/19/2018 Diodes Inc SUPER BARRIER RECTIFIER SIMULATOR=SPICE3 .MODEL DI_SDM1100S1F D ( IS=5.225n RS=119.2m BV=104.0 IBV=10.00 + CJO=223.1p M=336.8m N=1.126 TT=9.5n EG=480.0m VJ=24.16m ) * (c) 2018 Diodes Incorporated * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Diodes "). They are supplied * free of charge by Diodes for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Taiwan Inc.7F.,No. 50,Min-Chuan Road,Hsin-Tien District,New Taipei City 23141, Taiwan SDM2U30CSP Spice Model v1.0 Last Revised 8/11/2015 Diodes Inc SUPER BARRIER RECTIFIER SIMULATOR=SPICE3 .MODEL DI_SDM02U30LP3 D ( IS=10.49u RS=43.16m BV=100.00 IBV=200.00u + CJO=375.0p M=333.0m N=1.146 TT=21.6n EG=480.0m VJ=600.0m ) * (c) 2015 Diodes Incorporated * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Diodes "). They are supplied * free of charge by Diodes for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Taiwan Inc.7F.,No. 50,Min-Chuan Road,Hsin-Tien District,New Taipei City 23141, Taiwan *SDT12A120P5 Spice Model v1.0 Last Revised 4/8/2022 Diodes Inc SUPER BARRIER RECTIFIER SIMULATOR=SPICE3 .MODEL DI_SDT12A120P5 D ( IS=1.084u RS=19.29m BV=140.0 IBV=10.00 + CJO=2.275n M=669.4m N=1.086 TT=25.30n EG=480.0m VJ=877.8m ) *SDT15H100P5 Spice Model v1.0 Last Revised 4/8/2022 Diodes Inc SIMULATOR=SPICE3 .MODEL DI_SDT15H100P5 D ( IS=1.531u RS=8.047m BV=120.0 IBV=10.00 + CJO=2.944n M=610.9m N=1.113 TT=40.80n EG=480.0m VJ=1.158 ) *SDT5100LP5 Spice Model v1.0 Last Revised 02/21/2022 Diodes Inc SUPER BARRIER RECTIFIER SIMULATOR=SPICE3 .MODEL DI_SDT5100LP5 D ( IS=183.4n RS=33.62m BV=110.0 IBV=10.00 + CJO=504.0p M=688.6m N=1.286 TT=20.00n EG=480.0m VJ=2.077 ) *ZETEX ZHCS1000 Spice Model v1.0 Last Revised 22/05/02 * .MODEL ZHCS1000 D IS=1.6e-7 N=.59 RS=137e-3 IKF=2.5e-3 XTI=2 +EG=.58 CJO=184.9p M=.5231 VJ=.3905 Fc=.5 BV=60 IBV=100E-6 +ISR=4E-6 NR=1.8 * *$ * *ZETEX ZHCS2000 Spice Model v1.0 Last Revised 22/10/03 * .MODEL ZHCS2000 D IS=5e-7 N=.59 RS=88e-3 IKF=5e-3 XTI=2 +EG=.58 CJO=370p M=.5231 VJ=.3905 Fc=.5 BV=60 IBV=300E-6 +ISR=10E-6 NR=1.8 * *$ * *ZETEX ZHCS500 Spice Model v1.0 Last Revised 22/05/02 * .MODEL ZHCS500 D IS=9.1e-8 N=.59 RS=250e-3 IKF=1.37e-3 XTI=2 +EG=.58 CJO=101p M=.5231 VJ=.3905 Fc=.5 BV=60 IBV=100E-6 +ISR=2.2E-6 NR=1.8 * *$ * *ZETEX ZHCS750 Spice Model v1.0 Last Revised 23/9/97 * .MODEL ZHCS750 D IS=7E-6 N=.99 RS=130E-3 IKF=.15 XTI=2 EG=.58 + CJO=184.9p M=.523 VJ=.3905 Fc=.5 BV=60 IBV=300E-6 + ISR=4E-6 NR=1.8 * *$ * *ZETEX ZLLS1000 Spice Model v2.0 Last revision 24/05/2007 * *This simple model has limitations with respect to temperature *for best fit of forward characteristitics with temperature EG=0.63 *for best fit of reverse characteristitics with temperature EG=0.85 * .MODEL ZLLS1000 D IS=1.35E-6 N=1.03 ISR=3.3E-6 NR=2 IKF=0.65 BV=56 IBV=5E-4 +RS=0.14 TT=4E-9 CJO=115E-12 VJ=0.6 M=0.36 EG=0.63 XTI=2 TRS1=4E-3 * *$ * *ZETEX ZLLS2000 Spice Model v2.0 Last revision 25/05/2007 * *This simple model has limitations with respect to temperature *for best fit of forward characteristitics with temperature EG=0.63 *for best fit of reverse characteristitics with temperature EG=0.85 * .MODEL ZLLS2000 D IS=2.7e-6 N=1.03 ISR=4.5E-6 NR=2 IKF=1.3 BV=56 IBV=1E-3 +RS=0.07 TT=6e-9 CJO=265e-12 VJ=0.6 M=0.34 EG=0.63 XTI=2 TRS1=4e-3 * *$ * *ZETEX ZLLS400 Spice Model v2.0 Last revision 24/05/2007 * *This simple model has limitations with respect to temperature *best fit of forward characteristitics with temperature EG=0.63 *best fit of reverse characteristitics with temperature EG=0.85 * .MODEL ZLLS400 D IS=6.1e-7 N=1.03 ISR=1.4E-6 NR=2 IKF=0.32 BV=42 IBV=2E-4 +RS=0.27 TT=3e-9 CJO=71e-12 VJ=0.6 M=0.36 EG=0.63 XTI=2 TRS1=4e-3 * *$ * *ZETEX ZLLS410 Spice Model v1.0 Last Revised 25/05/07 * *This simple model has limitations with respect to temperature *best fit of forward characteristitics with temperature EG=0.63 *best fit of reverse characteristitics with temperature EG=0.75 * .MODEL ZLLS410 D IS=1.3e-6 N=1.03 ISR=4E-7 NR=2 IKF=0.15 BV=36 IBV=200E-6 +NBV=1 RS=0.1 TT=2e-9 CJO=81e-12 VJ=0.6 M=0.39 EG=0.63 XTI=2 TRS1=4E-3 * *$ * *ZETEX ZLLS500 Spice Model v2.0 Last revision 24/05/2007 * *This simple model has limitations with respect to temperature *best fit of forward characteristitics with temperature EG=0.63 *best fit of reverse characteristitics with temperature EG=0.85 * .MODEL ZLLS500 D IS=6.1e-7 N=1.03 ISR=1.4E-6 NR=2 IKF=0.32 BV=42 IBV=2E-4 +RS=0.27 TT=3e-9 CJO=71e-12 VJ=0.6 M=0.36 EG=0.63 XTI=2 TRS1=4e-3 * *$ *