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70V P-CHANNEL ENHANCEMENT MODE MOSFET
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This new generation of trench MOSFETs utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage power management applications.
|Compliance (Only Automotive(Q) supports PPAP)||Automotive|
|ESD Diodes (Y|N)||No|
||VDS| (V)||70 V|
||VGS| (±V)||20 ±V|
||IDS| @TA = +25°C (A)||5.7 A|
|PD @TA = +25°C (W)||4.17 W|
|RDS(ON)Max @ VGS(10V)(mΩ)||160 mΩ|
|RDS(ON)Max @ VGS(4.5V)(mΩ)||250 mΩ|
||VGS(TH)| Max (V)||1 V|
|QG Typ @ |VGS| = 4.5V (nC)||9.6 (@5V) nC|
|QG Typ @ |VGS| = 10V (nC)||18 nC|
|CISS Condition @|VDS| (V)||40 V|