Dual P-CHANNEL ENHANCEMENT MODE MOSFET
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This new generation of high cell density trench MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications.
| AEC Qualified | Yes |
|---|---|
| Compliance (Only Automotive(Q) supports PPAP) | Standard |
| Polarity | P+P |
| ESD Diodes (Y|N) | No |
| |VDS| (V) | 60 V |
| |VGS| (±V) | 20 ±V |
| |IDS| @TA = +25°C (A) | 3.4 A |
| PD @TA = +25°C (W) | 1.81 W |
| RDS(ON)Max @ VGS(10V)(mΩ) | 125 mΩ |
| RDS(ON)Max @ VGS(4.5V)(mΩ) | 190 mΩ |
| |VGS(TH)| Max (V) | 1 V |
| QG Typ @ |VGS| = 4.5V (nC) | 9 nC |
| QG Typ @ |VGS| = 10V (nC) | 17.7 nC |
| CISS Typ (pF) | 637 pF |
| Orderable Part Number | Buy from Distributor / Contact Sales | Request Samples |
|---|---|---|
| ZXMP6A17DN8TC | Request Sample |
A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.
| PCN # | Issue Date | Implementation Date | Subject |
|---|---|---|---|
| PCN-2495 | 2021-03-31 | 2021-07-01 | Qualification of Additional Assembly & Test Sites and Additional Wafer Back Grinding and Back Metal Process Source for Select Discrete Products |
| PCN-2386 | 2019-04-17 | 2019-07-17 | Addition of A Passivation Layer Over The Top Metal of The Die for Select Automotive MOSFET Products |
| PCN-2376 | 2018-11-30 | 2019-03-01 | Addition of A Passivation Layer Over The Top Metal of The Die |
