Diodes Menu Close
Back to MOSFET Master Table

ZXMN6A09GQ

60V N-CHANNEL ENHANCEMENT MODE MOSFET

Contact Sales

Log in or register to manage email notifications about changes to datasheets or PCNs for this part.

Description

This MOSFET is designed to meet the stringent requirements of Automotive applications. It is qualified to AEC-Q101, supported by a PPAP.

Feature(s)

  • 100% Unclamped Inductive Switch (UIS) Test in Production
  • High Voltage
  • Low On-Resistance
  • Fast Switching Speed
  • Low Gate Drive
  • Low Threshold
  • Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
  • Halogen and Antimony Free. “Green” Device (Note 3)
  • The ZXMN6A09GQ is suitable for automotive applications requiring specific change control and is AEC-Q101 qualified, is PPAP capable, and is manufactured in IATF16949:2016 certified facilities.

Application(s)

  • DC-DC Converters
  • Power Management Functions
  • Disconnect Switches
  • Motor Control

Product Specifications

Product Parameters

AEC Qualified Yes
Compliance (Only Automotive supports PPAP) Automotive
Polarity N
ESD Diodes (Y|N) No Y/N
|VDS| (V) 60 V
|VGS| (±V) 20 ±V
|IDS| @TA = +25°C (A) 7.5 A
PD @TA = +25°C (W) 2 W
RDS(ON)Max @ VGS(10V)(mΩ) 40 mΩ
RDS(ON)Max @ VGS(4.5V)(mΩ) 60 mΩ
|VGS(TH)| Max (V) 3 V
CISS Typ (pF) 1407 pF
CISS Condition @|VDS| (V) 40 V
QG Typ @ |VGS| = 4.5V (nC) 12.4 nC
QG Typ @ |VGS| = 10V (nC) 24.2

Related Content

Packages

Technical Documents

SPICE Model

Recommended Soldering Techniques

TN1.pdf