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ZXMN4A06GQ

40V N-CHANNEL ENHANCEMENT MODE MOSFET

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Description

This new generation MOSFET has been designed to minimize the onstate resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.

Application(s)

  • DC-DC Converters
  • Audio Output Stages
  • Relay and Solenoid driving
  • Motor Control

Product Specifications

Product Parameters

AEC Qualified Yes
Compliance (Only Automotive(Q) supports PPAP) Automotive
Polarity N
ESD Diodes (Y|N) No
|VDS| (V) 40 V
|VGS| (±V) 20 ±V
|IDS| @TA = +25°C (A) 7 A
PD @TA = +25°C (W) 2 W
RDS(ON)Max @ VGS(10V)(mΩ) 50 mΩ
RDS(ON)Max @ VGS(4.5V)(mΩ) 75 mΩ
QG Typ @ |VGS| = 10V (nC) 19 nC

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Recommended Soldering Techniques

TN1.pdf