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30V SO8 Complementary enhancement mode MOSFET H-Bridge

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This new generation complementary MOSFET H-Bridge features low on-resistance achievable with low gate drive.


  • DC Motor control
  • DC-AC Inverters
  • Product Specifications

    Product Parameters

    AEC Qualified No
    Compliance (Only Automotive supports PPAP) Standard
    Type 2 x P, 2 x N
    ESD Diodes (Y|N) No Y/N
    |VDS| (V) 30 V
    |VGS| (±V) 20 ±V
    IDSA +25ºC(A) 2.17, 1.64 A
    PDW +25ºC (W) 0.87 W
    RDS(ON)Max @ VGS(10V)(mΩ) 125, 210 mΩ
    RDS(ON)Max @ VGS(4.5V)(mΩ) 180, 330 mΩ
    CISS Typ (pF) 190, 204 pF
    QG Typ @ |VGS| = 10V (nC) 3.9, 5.2

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    RoHS CofC

    Product Change Notices (PCNs)

    A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.

    PCN # Issue Date Implementation Date Subject
    PCN-2495 2021-03-31 2021-07-01 Qualification of Additional Assembly & Test Sites and Additional Wafer Back Grinding and Back Metal Process
    Source for Select Discrete Products