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MMBD4448V

switching diode

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Product Specifications

Product Parameters

AEC Qualified No
Compliance (Only Automotive supports PPAP) Standard
Configuration Dual, Isolated
Polarity Anode, Cathode
Power Rating (mW) 150 mW
ESD Diodes (Y|N) No
Peak RepetitiveReverse VoltageVRRM (V) 80 V
Reverse Recovery Time trr (ns) 4 ns
Maximum Average Rectifier Current IO (mA) 250 mA
Maximum Peak Forward Surge Current IFSM (A) 4 A
Forward Voltage Drop VF @ IF (mA) 1 mA
Maximum ReverseCurrent IR (µA) 0.1 µA
TotalCapacitance CT (pF) 3.5 pF
V(BR)R (V) Min @IR=100?A 80@2.5?A
Trr(ns) Max @ IF=IR=10 mA, Irr=0.1xIR, RL=100? 4
Maximum Reverse Current IR @ VR (V) 70 V
IR(uA) Max @ VR=80V 100nA@70V
CT(pF) Max @ VR = 0V, f = 1MHz 3.5

Related Content

Packages

Technical Documents

SPICE Model

Recommended Soldering Techniques

TN1.pdf

RoHS CofC

Product Change Notices (PCNs)

A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.

PCN # Issue Date Implementation Date Subject
PCN-2461 2020-05-08 2021-04-05 Phenitec Wafer Manufacturing Site Change, Additional Wafer Sources, Wafer Diameter Change, Additional Assembly and Test Site
PCN-2315 2018-03-09 2018-06-09 Qualification of Alternative Wafer Sources for Select Products Due to Closure of Diodes FabTech (KFAB) Facility
PCN-2268 2017-04-21 2017-04-21 Qualification of Alternative Wafer Sources for Select Products Due to Closure of Diodes FabTech (KFAB) Facility