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150V NPN High-Voltage Transistor in SOT223

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  • BVCEO > 150V
  • IC = 5A High Continuous Collector Current
  • ICM = 10A Peak Pulse Current
  • Very Low Saturation Voltage VCE(sat) < 110mV @ 1A
  • RCE(sat) = 50mΩ for a Low Equivalent On-Resistance
  • HFE Specified Up to 10A for a High Gain Hold-Up
  • Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
  • Halogen and Antimony Free. “Green” Device (Note 3)
  • The DIODES™ FZT855Q is suitable for automotive applications requiring specific change control; this part is AEC-Q101 qualified, PPAP capable, and manufactured in IATF16949 certified facilities. https://www.diodes.com/quality/product-definitions/

Product Specifications

Product Parameters

AEC Qualified Yes
Compliance (Only Automotive supports PPAP) Automotive
Product Type High Voltage Transistor
IC (A) 5 A
ICM (A) 10 A
PD (W) 3 W
hFE (min) 100 Min
hFE(@ IC) 0.01 A
hFE(Min 2) 15
hFE(@ IC2) 5 A
VCE (SAT)Max (mV) 65 mV
VCE (SAT) (@ IC/IB) (A/m A) 0.5/50
VCE (SAT)(Max.2) 110 mV
VCE (SAT) (@ IC/IB2) (A/mA) 1/100
fT (MHz) 90 MHz

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