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FZT855Q

150V NPN High-Voltage Transistor in SOT223

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BVCEO > 150V
I_C = 5A High Continuous Collector Current
ICM = 10A Peak Pulse Current
Very Low Saturation Voltage VCE(sat) < 110mV @ 1A
R_CE(sat) = 50mΩ for a Low Equivalent On-Resistance
H_FE Specified Up to 10A for a High Gain Hold-Up
Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
The DIODES™ FZT855Q is suitable for automotive applications requiring specific change control; this part is AEC-Q101 qualified, PPAP capable, and manufactured in IATF16949 certified facilities. https://www.diodes.com/quality/product-definitions/

Product Specifications

AEC Qualified	Yes
Compliance (Only Automotive supports PPAP)	Automotive
Product Type	High Voltage Transistor
I_{C (A)}	5 A
I_{CM (A)}	10 A
P_{D (W)}	3 W
h_{FE (min)}	100 Min
h_FE(@ I_C)	0.01 A
h_FE(Min 2)	15
h_FE(@ I_C2)	5 A
V_{CE (SAT)}Max (mV)	65 mV
VCE (SAT) (@ IC/IB) (A/m A)	0.5/50
V_{CE (SAT)}(Max.2)	110 mV
V_{CE (SAT)} (@ I_C/I_B2) (A/mA)	1/100
f_{T (MHz)}	90 MHz

Recommended Soldering Techniques

TN1.pdf