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NPN LOW VOLTAGE AVALANCHE TRANSISTOR IN W-DFN2020-3 SWP
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The DIODESTM FMMT411FDBWQ is a silicon planar bipolar transistor designed for operating in avalanche mode. Tight process control and low inductance packaging combine to produce high on current pulses with fast edges.
This Bipolar Junction Transistor (BJT) is designed to meet the stringent requirements of automotive applications.
|Compliance (Only Automotive supports PPAP)||Automotive|
|VCBO (V)||80 V|
|VCEO, VCES (V)||15 V|
|ICM (A)||60 A|
|PD (W)||1.7 W|
|ISA (A)||35 A|
|ISA(@ VC) (V)||70 V|
|ISA(@ CCE) (pF)||470 pF|
|hFE (min)||100 Min|
|@ IC (mA)||10 mA|
|fT Min (MHz)||80 MHz|