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FMMT411FDBW

NPN LOW VOLTAGE AVALANCHE TRANSISTOR IN U-DFN2020-3

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Description

The FMMT411FDBW is a silicon planar bipolar transistor designed for operating in avalanche mode. Tight process control and low inductance packaging combine to produce high on current pulses with fast edges.

Feature(s)

  • 80A Peak Avalanche Current
  • BVCBO > 80V
  • BVCEO > 15V
  • Specifically Designed for Low Voltage Avalanche Mode Operation
  • Low Profile 0.62mm High Package for Thin Applications
  • Sidewall tin plating for wettable flanks in AOI
  • 4mm2 Footprint, 50% Smaller than SOT23
  • Totally Lead-Free & Fully RoHS Compliant 
  • Halogen- and Antimony-Free. “Green” Device 
  • For automotive applications requiring specific change control (i.e. parts qualified to AEC-Q100/101/200, PPAP capable, and manufactured in IATF 16949 certified facilities), please contact us or your local Diodes representative. https://www.diodes.com/quality/product-definitions/

Application(s)

  • Laser Diode Drivers for Ranging and Measurement (LIDAR)
  • Radar Systems
  • Fast Edge Switch Generator
  • High-Speed Pulse Generators

Product Specifications

Product Parameters

AEC Qualified Yes
Compliance (Only Automotive supports PPAP) Standard
VCBO (V) 80 V
VCEO, VCES (V) 15 V
ICM (A) 60 A
PD (W) 1.7 W
ISA (A) 35 A
ISA(@ VC) (V) 70 V
ISA(@ CCE) (pF) 470 pF
hFE (min) 100 Min
@ IC (mA) 10 mA
fT Min (MHz) 80 MHz

Related Content

Packages

Technical Documents

Recommended Soldering Techniques

TN1.pdf

RoHS CofC