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DZT5551Q

NPN, 160V, 0.6A, SOT223

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Description

This Bipolar Junction Transistor (BJT) is designed to meet the stringent requirements of Automotive Applications.

Feature(s)

  • BVCEO > 160V
  • BVEBO > 6V
  • IC = 600mA Continuous Collector Current
  • Low Saturation Voltage (150mV max @10mA)
  • hFE Specified Up to 50mA for a High Gain Hold Up
  • Complementary PNP Type: DZT5401
  • Totally Lead-Free & Fully RoHS Compliant
  • Halogen and Antimony Free. “Green” Device
  • Qualified to AEC-Q101 Standards for High Reliability
  • PPAP Capable

Application(s)

  • High Voltage Amplification Applications
  • High Voltage Switching

Product Specifications

Product Parameters

AEC Qualified Yes
Compliance (Only Automotive supports PPAP) Automotive
Product Type NPN
VCEO, VCES (V) 160 V
IC (A) 0.6 A
ICM (A) 1 A
PD (W) 2 W
hFE (min) 80 Min
hFE(@ IC) 0.01 A
hFE(Min 2) 30
hFE(@ IC2) 0.05 A
VCE (SAT)Max (mV) 150 mV
VCE (SAT) (@ IC/IB) (A/m A) 0.1/1
VCE (SAT) (@ IC/IB2) (A/mA) 0.05/5
fT (MHz) 100
VCE (SAT)(Max.2) 200 mV
RCE(SAT) N/A mΩ

Related Content

Packages

Technical Documents

SPICE Model

Recommended Soldering Techniques

TN1.pdf

RoHS CofC

Product Change Notices (PCNs)

A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.

PCN # Issue Date Implementation Date Subject
PCN-2462 2020-05-08 2021-04-11 Phenitec Wafer Manufacturing Site Change, Additional Wafer Sources, Wafer Diameter Change, Additional Assembly and Test Site (Automotive)