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Advanced process capability has been used to maximise the performance of this 60V, NPN transistor. The W-DFN2020-3/SWP (Type A) package offers lower profile and the derating up to +175°C allows higher dissipation for applications where power density is of utmost importance.
BVCEO > 60V
IC = 4A Continuous Collector Current
Low Saturation Voltage (100mV Max @1A)
RSAT = 60mΩ for a Low Equivalent On-Resistance
hFE Specified up to 6A for High Current Gain Hold Up
Tighter Gain Specification
Low Profile 0.62mm High Package for Thin Applications
Sidewall Tin Plating for Wettable Flanks in AOI
RθJA Efficient, 60% Lower than SOT23
4mm2 Footprint, 50% Smaller Than SOT23
Rated +175°C – Ideal for High Temperature Environment