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DMTH6016LSDQ

60V 175°C DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

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Description

This MOSFET is designed to meet the stringent requirements of Automotive applications. It is qualified to AEC-Q101 and supported by a PPAP.

Feature(s)

  • Rated to +175°C – Ideal for High Ambient Temperature Environments
  • 100% Unclamped Inductive Switching – Ensures More Reliable and Robust End Application 
  • Low RDS(ON) – Minimizes On-State Losses
  • Low Input Capacitance
  • Fast Switching Speed

Application(s)

  • Power Management
  • DC-DC Converters
  • Motor Control

Product Specifications

Product Parameters

AEC Qualified Yes
Compliance (Only Automotive(Q) supports PPAP) Automotive
Polarity N+N
ESD Diodes (Y|N) No
|VDS| (V) 60 V
|VGS| (±V) 20 ±V
|IDS| @TA = +25°C (A) 7.6 A
PD @TA = +25°C (W) 1.9 W
RDS(ON)Max @ VGS(10V)(mΩ) 19.5 mΩ
RDS(ON)Max @ VGS(4.5V)(mΩ) 28 mΩ
|VGS(TH)| Max (V) 2.5 V
QG Typ @ |VGS| = 4.5V (nC) 8.4 nC
QG Typ @ |VGS| = 10V (nC) 17 nC
CISS Typ (pF) 864 pF
CISS Condition @|VDS| (V) 30 V

Related Content

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Technical Documents

SPICE Model

Recommended Soldering Techniques

TN1.pdf

FAQs

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