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60V 175°C N-CHANNEL ENHANCEMENT MODE MOSFET
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This MOSFET is designed to meet the stringent requirements of automotive applications. It is qualified to AEC-Q101 and supported by a PPAP.
|Compliance (Only Automotive(Q) supports PPAP)||Automotive|
|ESD Diodes (Y|N)||No|
||VDS| (V)||60 V|
||VGS| (±V)||20 ±V|
||IDS| @TA = +25°C (A)||10.8 A|
||IDS| @TC = +25°C (A)||46.9 A|
|PD @TA = +25°C (W)||3.2 W|
|PD @TC = +25°C (W)||60 W|
|RDS(ON)Max @ VGS(10V)(mΩ)||17 mΩ|
|RDS(ON)Max @ VGS(4.5V)(mΩ)||24 mΩ|
||VGS(TH)| Max (V)||3 V|
|QG Typ @ |VGS| = 4.5V (nC)||8.4 nC|
|QG Typ @ |VGS| = 10V (nC)||17 nC|
|CISS Typ (pF)||864 pF|
|CISS Condition @|VDS| (V)||30 V|