Image shown is for reference only. Actual package may vary. Refer to the product data sheet for package details.
DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
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This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high-efficiency power management applications.
|Compliance (Only Automotive(Q) supports PPAP)||Standard|
|ESD Diodes (Y|N)||No|
||VDS| (V)||60 V|
||VGS| (±V)||20 ±V|
||IDS| @TA = +25°C (A)||13.1 A|
||IDS| @TC = +25°C (A)||47.6 A|
|PD @TA = +25°C (W)||2.8 W|
|PD @TC = +25°C (W)||37.5 W|
|RDS(ON)Max @ VGS(10V)(mΩ)||11 mΩ|
|RDS(ON)Max @ VGS(4.5V)(mΩ)||16 mΩ|
||VGS(TH)| Max (V)||3 V|
|QG Typ @ |VGS| = 4.5V (nC)||20.3 nC|
|QG Typ @ |VGS| = 10V (nC)||40.2 nC|
|CISS Typ (pF)||2090 pF|
|CISS Condition @|VDS| (V)||30 V|
A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.
|PCN #||Issue Date||Implementation Date||Subject|
|PCN-2495||2021-03-31||2021-07-01||Qualification of Additional Assembly & Test Sites and Additional Wafer Back Grinding and Back Metal Process
Source for Select Discrete Products
|PCN-2439||2019-12-05||2020-03-05||Qualification of "Diodes Technology (Cheng Du) Company Limited" (CAT) as an Additional Assembly & Test Site, Using Gold
Bond Wire, and as an Additional Wafer Back Grinding and Back Metal Process Source on Select MOSFET Products