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60V 175°C N-CHANNEL ENHANCEMENT MODE MOSFET
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This new generation N-Channel Enhancement Mode MOSFET is designed to minimize RDS(ON) and yet maintain superior switching performance. This device is ideal for use in notebook battery power management and loadswitch.
|Compliance (Only Automotive(Q) supports PPAP)||Automotive|
|ESD Diodes (Y|N)||No|
||VDS| (V)||60 V|
||VGS| (±V)||20 ±V|
||IDS| @TA = +25°C (A)||14.2 A|
|PD @TA = +25°C (W)||3.2 W|
|RDS(ON)Max @ VGS(10V)(mΩ)||10 mΩ|
|RDS(ON)Max @ VGS(4.5V)(mΩ)||12.8 mΩ|
||VGS(TH)| Max (V)||2 V|
|QG Typ @ |VGS| = 4.5V (nC)||15.6 nC|
|QG Typ @ |VGS| = 10V (nC)||33.5 nC|
|CISS Typ (pF)||1925 pF|
|CISS Condition @|VDS| (V)||30 V|