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DMTH6009LK3Q

60V 175°C N-CHANNEL ENHANCEMENT MODE MOSFET

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Description

This new generation N-Channel Enhancement Mode MOSFET is designed to minimize R_DS(ON) and yet maintain superior switching performance. This device is ideal for use in notebook battery power management and loadswitch.

Feature(s)

Rated to +175°C – Ideal for High Ambient Temperature Environments
Low R_DS(ON) – Ensures On-State Losses Are Minimized
Excellent Q_gd x R_DS(ON) Product (FOM)
Advanced Technology for DC/DC Converters
Small Form Factor Thermally Efficient Package Enables Higher Density End Products

Application(s)

Power management functions
DC-DC Converters
Backlighting
Automotive

Product Specifications

Product Parameters

AEC Qualified	Yes
Compliance (Only Automotive(Q) supports PPAP)	Automotive
Polarity	N
ESD Diodes (Y\|N)	No
\|V_DS\| (V)	60 V
\|V_GS\| (±V)	20 ±V
\|I_DS\| @T_A = +25°C (A)	14.2 A
P_D @T_A = +25°C (W)	3.2 W
R_DS(ON)Max @ V_GS(10V)(mΩ)	10 mΩ
R_DS(ON)Max @ V_GS(4.5V)(mΩ)	12.8 mΩ
\|V_GS(TH)\| Max (V)	2 V
Q_G Typ @ \|V_GS\| = 4.5V (nC)	15.6 nC
Q_G Typ @ \|V_GS\| = 10V (nC)	33.5 nC
C_ISS Typ (pF)	1925 pF
C_ISS Condition @\|V_DS\| (V)	30 V

Technical Documents

SPICE Model

DMTH6009LK3Q .spice.txt

Recommended Soldering Techniques

TN1.pdf