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DMTH4M70SPGWQ

40V +175°C N-CHANNEL ENHANCEMENT MODE MOSFET PowerDI8080-5

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Description

This MOSFET is designed to meet the stringent requirements of automotive applications. It is qualified to AEC-Q101, supported by a PPAP

Feature(s)

  • Rated to +175°C – Ideal for High Ambient Temperature
    Environments
  • 100% Unclamped Inductive Switching (UIS) Test in Production—
    Ensures More Reliable and Robust End Application
  • High Conversion Efficiency
  • Low RDS(ON)—Minimizes Power Losses
  • Wettable Flank for Improved Optical Inspection
  • Fast Switching Speed
  • Low Input Capacitance
  • Lead-Free Finish; RoHS Compliant 
  • Halogen and Antimony Free. “Green” Device 
  • The DMTH4M70SPGWQ is suitable for automotive applications
    requiring specific change control; this part is AEC-Q101
    qualified, PPAP capable, and manufactured in IATF 16949
    certified facilities.
    https://www.diodes.com/quality/product-definitions/

Application(s)

  • Engine Management Systems
  • Body Control Electronics
  • DC-DC Converters

Product Specifications

Product Parameters

AEC Qualified Yes
Compliance (Only Automotive(Q) supports PPAP) Automotive
Polarity N
ESD Diodes (Y|N) No
|VDS| (V) 40 V
|VGS| (±V) 20 ±V
|IDS| @TC = +25°C (A) 460 A
PD @TA = +25°C (W) 5.6 W
PD @TC = +25°C (W) 428 W
RDS(ON)Max @ VGS(10V)(mΩ) 0.7 mΩ
|VGS(TH)| Min (V) 2 V
|VGS(TH)| Max (V) 4 V
QG Typ @ |VGS| = 10V (nC) 117.1 nC
CISS Typ (pF) 10053 pF
CISS Condition @|VDS| (V) 20 V

Related Content

Packages

Technical Documents

SPICE Model

Recommended Soldering Techniques

TN1.pdf