40V +175°C N-CHANNEL ENHANCEMENT MODE MOSFET PowerDI5060-8
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This MOSFET is designed to meet the stringent requirements of automotive applications. It is qualified to AEC-Q101, supported by a PPAP.
|Compliance (Only Automotive(Q) supports PPAP)||Automotive|
|ESD Diodes (Y|N)||No|
||VDS| (V)||40 V|
||VGS| (±V)||20 ±V|
||IDS| @TC = +25°C (A)||73 A|
|PD @TA = +25°C (W)||3.3 W|
|PD @TC = +25°C (W)||68 W|
|RDS(ON)Max @ VGS(10V)(mΩ)||7.5 mΩ|
||VGS(TH)| Max (V)||4 V|
|QG Typ @ |VGS| = 10V (nC)||12.1 nC|
|CISS Typ (pF)||897 pF|
|CISS Condition @|VDS| (V)||20 V|