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This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.


  • Rated to +175°C – Ideal for High Ambient Temperature Environments
  • 100% Unclamped Inductive Switching – Ensures More Reliable and Robust End Application
  • Low RDS(ON) – Ensures On-State Losses are Minimized
  • Excellent QGD x RDS(ON) Product (FOM)


  • Power Management Functions
  • DC-DC Converters
  • Backlighting

Product Specifications

Product Parameters

AEC Qualified Yes
Compliance (Only Automotive(Q) supports PPAP) Standard
Polarity N
ESD Diodes (Y|N) No
|VDS| (V) 40 V
|VGS| (±V) 20 ±V
|IDS| @TA = +25°C (A) 17.6 A
|IDS| @TC = +25°C (A) 100 A
PD @TA = +25°C (W) 3.1 W
PD @TC = +25°C (W) 88 W
RDS(ON)Max @ VGS(10V)(mΩ) 3.6 mΩ
RDS(ON)Max @ VGS(4.5V)(mΩ) 5.2 (@5V) mΩ
|VGS(TH)| Max (V) 2.5 V
QG Typ @ |VGS| = 4.5V (nC) 17.6 nC
QG Typ @ |VGS| = 10V (nC) 38.5 nC
CISS Typ (pF) 2693 pF
CISS Condition @|VDS| (V) 20 V

Technical Documents


Recommended Soldering Techniques


Product Change Notices (PCNs)

A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.

PCN # Issue Date Implementation Date Subject
PCN-2425 2019-10-04 2020-01-04 Qualification of Additional Wafer Solderable Front Metal Plating, Back Grinding and Back Metal Process Source, and
Additional Wafer Source for Select Products.