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DMTH4008LPDW

40V DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

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Description

This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power management applications.

Feature(s)

  • Rated to +175°C – Ideal for High Ambient Temperature Environments
  • 100% Unclamped Inductive Switching, Test in Production– Ensures More Reliable and Robust End Application
  • High Conversion Efficiency
  • Low RDS(ON) – Minimizes On State Losses
  • Low Input Capacitance
  • Fast Switching Speed
  • Wettable Flank for Improved Optical Inspection
  • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
  • Halogen and Antimony Free. “Green” Device (Note 3)
  • For automotive applications requiring specific change control (i.e. parts qualified to AEC-Q100/101/200, PPAP capable, and manufactured in IATF 16949 certified facilities), please contact us or your local Diodes representative. https://www.diodes.com/quality/product-definitions/
  • An Automotive-Compliant Part is Available Under Separate Datasheet (DMTH4008LPDWQ)

Application(s)

  • Power Management Functions
  • DC-DC Converters

Product Specifications

Product Parameters

AEC Qualified Yes
Compliance (Only Automotive(Q) supports PPAP) Standard
Polarity N+N
ESD Diodes (Y|N) No
|VDS| (V) 40 V
|VGS| (±V) 20 ±V
|IDS| @TA = +25°C (A) 10 A
|IDS| @TC = +25°C (A) 46.2 A
PD @TA = +25°C (W) 1.3 W
PD @TC = +25°C (W) 39.4 W
RDS(ON)Max @ VGS(10V)(mΩ) 12.3 mΩ
RDS(ON)Max @ VGS(4.5V)(mΩ) 17.5 mΩ
|VGS(TH)| Max (V) 2.3 V
QG Typ @ |VGS| = 4.5V (nC) 5.8 nC
QG Typ @ |VGS| = 10V (nC) 12.3 nC
CISS Typ (pF) 881 pF
CISS Condition @|VDS| (V) 20 V

Related Content

Packages

Technical Documents

SPICE Model

Recommended Soldering Techniques

TN1.pdf

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