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DMTH4008LFDFWQ

40V +175°C N-CHANNEL ENHANCEMENT MODE MOSFET

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Description

This MOSFET is designed to meet the stringent requirements of automotive applications. It is qualified to AEC-Q101, supported by a PPAP.

Application(s)

  • Power Management Functions
  • DC-DC Converters
  • Backlighting

Feature(s)

  • Rated to +175°C – Ideal for High Ambient Temperature Environments
  • 100% Unclamped Inductive Switching – Ensures More Reliable and Robust End Application
  • Low RDS(ON) – Ensures On State Losses Are Minimized
  • 0.6mm Profile – Ideal for Low Profile Applications
  • PCB Footprint of 4mm2
  • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
  • Halogen and Antimony Free. “Green” Device (Note 3)
  • Qualified to AEC-Q101 Standards for High Reliability
  • PPAP Capable (Note 4)

Product Specifications

Product Parameters

AEC Qualified Yes
Compliance (Only Automotive(Q) supports PPAP) Automotive
Polarity N
ESD Diodes (Y|N) No
|VDS| (V) 40 V
|VGS| (±V) 20 ±V
|IDS| @TA = +25°C (A) 11.6 A
PD @TA = +25°C (W) 2.35 W
RDS(ON)Max @ VGS(10V)(mΩ) 11.5 mΩ
RDS(ON)Max @ VGS(4.5V)(mΩ) 18 mΩ
|VGS(TH)| Max (V) 3 V
QG Typ @ |VGS| = 4.5V (nC) 6.8 nC
QG Typ @ |VGS| = 10V (nC) 14.2 nC
CISS Typ (pF) 1030 pF
CISS Condition @|VDS| (V) 20 V

Related Content

Packages

Technical Documents

SPICE Model

Recommended Soldering Techniques

TN1.pdf

RoHS CofC

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