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40V +175°C N-CHANNEL ENHANCEMENT MODE MOSFET
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This MOSFET is designed to meet the stringent requirements of Automotive applications. It is qualified to AECQ101 and supported by a PPAP.
|Compliance (Only Automotive(Q) supports PPAP)||Automotive|
|ESD Diodes (Y|N)||No|
||VDS| (V)||40 V|
||VGS| (±V)||20 ±V|
||IDS| @TC = +25°C (A)||95 A|
|PD @TA = +25°C (W)||2.1 W|
|PD @TC = +25°C (W)||100 W|
|RDS(ON)Max @ VGS(10V)(mΩ)||4.5 mΩ|
||VGS(TH)| Max (V)||4 V|
|QG Typ @ |VGS| = 10V (nC)||49.1 nC|
|CISS Typ (pF)||3062 pF|
|CISS Condition @|VDS| (V)||20 V|
A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.
|PCN #||Issue Date||Implementation Date||Subject|
|PCN-2591||2022-06-21||2022-09-21||Change of Lead Frame Type for Select Automotive Products|