Image shown is for reference only. Actual package may vary. Refer to the product data sheet for package details.
40V +175°C N-CHANNEL ENHANCEMENT MODE MOSFET
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This MOSFET is designed to minimize the on-state resistance (RDS(ON)), yet maintain superior switching performance, making it ideal for high efficiency power management applications.
|Compliance (Only Automotive(Q) supports PPAP)||Standard|
|ESD Diodes (Y|N)||No|
||VDS| (V)||40 V|
||VGS| (±V)||20 ±V|
||IDS| @TC = +25°C (A)||100 A|
|PD @TA = +25°C (W)||3.9 W|
|PD @TC = +25°C (W)||180 W|
|RDS(ON)Max @ VGS(10V)(mΩ)||3.2 mΩ|
||VGS(TH)| Max (V)||4 V|
|QG Typ @ |VGS| = 10V (nC)||68.6 nC|
|CISS Typ (pF)||4305 pF|
|CISS Condition @|VDS| (V)||25 V|