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30V 175°C N-CHANNEL ENHANCEMENT MODE MOSFET
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This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)), yet maintain superior switching performance, making it ideal for high efficiency power management applications.
|Compliance (Only Automotive(Q) supports PPAP)||Standard|
|ESD Diodes (Y|N)||No|
||VDS| (V)||30 V|
||VGS| (±V)||20, 16 ±V|
||IDS| @TA = +25°C (A)||21 A|
||IDS| @TC = +25°C (A)||75 A|
|PD @TA = +25°C (W)||3 W|
|PD @TC = +25°C (W)||107 W|
|RDS(ON)Max @ VGS(10V)(mΩ)||4 mΩ|
|RDS(ON)Max @ VGS(4.5V)(mΩ)||7 mΩ|
||VGS(TH)| Max (V)||3 V|
|QG Typ @ |VGS| = 4.5V (nC)||20 nC|
|QG Typ @ |VGS| = 10V (nC)||44 nC|
|CISS Typ (pF)||2370 pF|
|CISS Condition @|VDS| (V)||15 V|
A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.
|PCN #||Issue Date||Implementation Date||Subject|
|PCN-2425||2019-10-04||2020-01-04||Qualification of Additional Wafer Solderable Front Metal Plating, Back Grinding and Back Metal Process Source, and
Additional Wafer Source for Select Products.
|PCN-2403||2019-03-25||2019-06-19||Qualification of Additional Wafer Solderable Front Metal Plating, Back Grinding and Back Metal Process Source, Additional Wafer Source, or Additional Assembly and Test site for Select Products.|