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30V 175°C N-CHANNEL ENHANCEMENT MODE MOSFET
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This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high-efficiency power management applications.
|Compliance (Only Automotive(Q) supports PPAP)||Standard|
|ESD Diodes (Y|N)||No|
||VDS| (V)||30 V|
||VGS| (±V)||16 ±V|
||IDS| @TC = +25°C (A)||150 A|
|PD @TA = +25°C (W)||3.1 W|
|RDS(ON)Max @ VGS(10V)(mΩ)||2.45 mΩ|
|RDS(ON)Max @ VGS(4.5V)(mΩ)||3.5 mΩ|
||VGS(TH)| Max (V)||2 V|
|QG Typ @ |VGS| = 4.5V (nC)||30 nC|
|QG Typ @ |VGS| = 10V (nC)||69 nC|
|CISS Typ (pF)||4336 pF|
|CISS Condition @|VDS| (V)||15 V|