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DMTH10H015SK3Q

100V 175°C N-CHANNEL ENHANCEMENT MODE MOSFET

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Description

This MOSFET is designed to meet the stringent requirements of Automotive applications. It is qualified to AEC-Q101, supported by a PPAP

Feature(s)

  • Rated to +175°C
    • Ideal for High Ambient Temperature
      Environments
  • 100% Unclamped Inductive Switching 
    • Ensures More Reliable
      and Robust End Application
  • Low RDS(ON)
    • Minimizes Power Losses
  • Low Qg
    • Minimizes Switching Losses
  • Lead-Free Finish; RoHS Compliant
  • Halogen and Antimony Free. “Green” Device 
  • The DMTH10H015SK3Q is suitable for automotive
    applications requiring specific change control; this part is
    AEC-Q101 qualified, PPAP capable, and manufactured in
    IATF 16949 certified facilities.
    https://www.diodes.com/quality/product-definitions/

Application(s)

  • Power Management Functions
  • DC-DC Converters
  • Backlighting

Product Specifications

Product Parameters

AEC Qualified Yes
Compliance (Only Automotive(Q) supports PPAP) Automotive
Polarity N
ESD Diodes (Y|N) No
|VDS| (V) 100 V
|VGS| (±V) 20 ±V
|IDS| @TC = +25°C (A) 59 A
PD @TA = +25°C (W) 3.7 W
RDS(ON)Max @ VGS(10V)(mΩ) 14 mΩ
|VGS(TH)| Max (V) 4 V
QG Typ @ |VGS| = 10V (nC) 30.1 nC
CISS Typ (pF) 2343 pF
CISS Condition @|VDS| (V) 50 V

Related Content

Packages

Technical Documents

SPICE Model

Recommended Soldering Techniques

TN1.pdf