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DMTH10H015SK3

100V 175°C N-CHANNEL ENHANCEMENT MODE MOSFET

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This new generation MOSFET features low on-resistance and fast switching, making it ideal for high efficiency power management applications.

Rated to +175°C
- Ideal for High Ambient Temperature
  Environments
100% Unclamped Inductive Switching
- Ensures More Reliable
  and Robust End Application
Low RDS(ON)
- Minimizes Power Losses
Low Qg
- Minimizes Switching Losses
Lead-Free Finish; RoHS Compliant
Halogen and Antimony Free. “Green” Device
For automotive applications requiring specific change control
(i.e.: parts qualified to AEC-Q100/101/200, PPAP capable, and
manufactured in IATF 16949 certified facilities), please refer
to the related automotive grade (Q-suffix) part. A listing can
be found at
https://www.diodes.com/products/automotive/automotiveproducts/
This part is qualified to JEDEC standards (as references in
AEC-Q) for High Reliability.
https://www.diodes.com/quality/product-definitions/

Product Specifications

AEC Qualified	No
Compliance (Only Automotive(Q) supports PPAP)	Standard
Polarity	N
ESD Diodes (Y\|N)	No
\|V_DS\| (V)	100 V
\|V_GS\| (±V)	20 ±V
\|I_DS\| @T_C = +25°C (A)	59 A
P_D @T_A = +25°C (W)	3.7 W
R_DS(ON)Max @ V_GS(10V)(mΩ)	14 mΩ
\|V_GS(TH)\| Max (V)	4 V
Q_G Typ @ \|V_GS\| = 10V (nC)	30.1 nC
C_ISS Typ (pF)	2343 pF
C_ISS Condition @\|V_DS\| (V)	50 V

SPICE Model

DMTH10H015SK3.spice.txt

Recommended Soldering Techniques

TN1.pdf