Image shown is for reference only. Actual package may vary. Refer to the product data sheet for package details.
100V 175°C N-CHANNEL ENHANCEMENT MODE MOSFET
Log in or register to manage email notifications about changes to datasheets or PCNs for this part.
This new generation MOSFET features low on-resistance and fast switching, making it ideal for high efficiency power management applications.
|Compliance (Only Automotive(Q) supports PPAP)||Standard|
|ESD Diodes (Y|N)||No|
||VDS| (V)||100 V|
||VGS| (±V)||20 ±V|
||IDS| @TC = +25°C (A)||59 A|
|PD @TA = +25°C (W)||3.7 W|
|RDS(ON)Max @ VGS(10V)(mΩ)||14 mΩ|
||VGS(TH)| Max (V)||4 V|
|QG Typ @ |VGS| = 10V (nC)||30.1 nC|
|CISS Typ (pF)||2343 pF|
|CISS Condition @|VDS| (V)||50 V|