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DMT8008LK3

80V N-CHANNEL ENHANCEMENT MODE MOSFET

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Description

This new generation MOSFET features low on-resistance and fast switching, making it ideal for high-efficiency power management applications.

Feature(s)

  • 100% Unclamped Inductive Switching (UIS) Test in Production –
    Ensures More Reliable and Robust End Application
  • Low RDS(on) – Minimizes Power Losses
  • Low Qg – Minimizes Switching Losses
  • Lead-Free Finish; RoHS Compliant
  • Halogen and Antimony Free. “Green” Device 
  • For automotive applications requiring specific change control
    (i.e. parts qualified to AEC-Q100/101/200, PPAP capable, and
    manufactured in IATF 16949 certified facilities), please
    contact us or your local Diodes representative.
    https://www.diodes.com/quality/product-definitions/

Product Specifications

Product Parameters

AEC Qualified No
Compliance (Only Automotive(Q) supports PPAP) Standard
Polarity N
ESD Diodes (Y|N) No
|VDS| (V) 80 V
|VGS| (±V) 20 ±V
|IDS| @TC = +25°C (A) 95 A
PD @TA = +25°C (W) 3 W
RDS(ON)Max @ VGS(10V)(mΩ) 7 mΩ
RDS(ON)Max @ VGS(4.5V)(mΩ) 11 mΩ
|VGS(TH)| Max (V) 2.8 V
QG Typ @ |VGS| = 4.5V (nC) 21.7 nC
QG Typ @ |VGS| = 10V (nC) 41.5 nC
CISS Typ (pF) 2345 pF
CISS Condition @|VDS| (V) 40 V

Related Content

Packages

Technical Documents

SPICE Model

Recommended Soldering Techniques

TN1.pdf

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