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DMT616MLSS

60V N-CHANNEL ENHANCEMENT MODE MOSFET

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Description

This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and maintain superior switching performance, which makes it ideal for high-efficiency power management applications.

Feature(s)

  • 100% Unclamped Inductive Switching (UIS) Test in Production— Ensures More Reliable and Robust End Application
  • High Conversion Efficiency
  • Low RDS(ON)—Minimizes On-State Losses
  • Low Input Capacitance
  • Fast Switching Speed

Application(s)

  • High-Frequency Switching
  • Synchronous Rectification
  • DC-DC Converters

Product Specifications

Product Parameters

AEC Qualified No
Compliance (Only Automotive(Q) supports PPAP) Standard
Polarity N
ESD Diodes (Y|N) No
|VDS| (V) 60 V
|VGS| (±V) 20 ±V
|IDS| @TA = +25°C (A) 10 A
PD @TA = +25°C (W) 2.06 W
RDS(ON)Max @ VGS(10V)(mΩ) 14 mΩ
RDS(ON)Max @ VGS(4.5V)(mΩ) 21 mΩ
|VGS(TH)| Max (V) 2.2 V
QG Typ @ |VGS| = 4.5V (nC) 7.3 nC
QG Typ @ |VGS| = 10V (nC) 13.6 nC
CISS Typ (pF) 785 pF
CISS Condition @|VDS| (V) 30 V

Related Content

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Technical Documents

SPICE Model

Recommended Soldering Techniques

TN1.pdf

RoHS CofC

FAQs

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