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DMT6016LSS

60V N-CHANNEL ENHANCEMENT MODE MOSFET

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Description

This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and maintain superior switching performance, making it ideal for high efficiency power management applications.

Application(s)

  • Backlighting
  • Power Management Functions
  • DC-DC Converters

Product Specifications

Product Parameters

AEC Qualified Yes
Compliance (Only Automotive(Q) supports PPAP) Standard
Polarity N
ESD Diodes (Y|N) No
|VDS| (V) 60 V
|VGS| (±V) 20 ±V
|IDS| @TA = +25°C (A) 9.2 A
PD @TA = +25°C (W) 2.1 W
RDS(ON)Max @ VGS(10V)(mΩ) 18 mΩ
RDS(ON)Max @ VGS(4.5V)(mΩ) 28 mΩ
|VGS(TH)| Max (V) 2.5 V
QG Typ @ |VGS| = 4.5V (nC) 8.4 nC
QG Typ @ |VGS| = 10V (nC) 17 nC
CISS Typ (pF) 864 pF

Related Content

Packages

Technical Documents

SPICE Model

Recommended Soldering Techniques

TN1.pdf

Orderable Part Number Buy from Distributor / Contact Sales Request Samples
DMT6016LSS-13

DMT6016LSS-13

Authorized Distributor Quantity Inventory Date Countries/Regions Buy Online
Digi-Key Electronics 69907 6/25/2022 Europe, Asia, North America Buy Now
RS Components - Spain 2460 6/25/2022 Spain Contact Sales
RS Components - UK 2460 6/25/2022 England Buy Now
Future Electronics - Europe 34 6/24/2022 England Contact Sales
Request Sample

Product Change Notices (PCNs)

A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.

PCN # Issue Date Implementation Date Subject
PCN-2425 2019-10-04 2020-01-04 Qualification of Additional Wafer Solderable Front Metal Plating, Back Grinding and Back Metal Process Source, and
Additional Wafer Source for Select Products.