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DMT6011LSS

60V N-CHANNEL ENHANCEMENT MODE MOSFET

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Description

This MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high efficiency power management applications.

Feature(s)

  • 100% Unclamped Inductive Switching (UIS) Test in Production –
  • Ensures More Reliable and Robust End Application
  • High Conversion Efficiency
  • Low RDS(ON) – Minimizes On-State Losses
  • Low Input Capacitance
  • Fast Switching Speed
  • ESD Protected Gate
  • Totally Lead-Free & Fully RoHS Compliant 
  • Halogen and Antimony Free. “Green” Device 
  • For automotive applications requiring specific change control
    (i.e. parts qualified to AEC-Q100/101/200, PPAP capable, and
    manufactured in IATF 16949 certified facilities), please
    contact us or your local Diodes representative.
    https://www.diodes.com/quality/product-definitions/

Application(s)

  • High Frequency Switching
  • Synchronous Rectification
  • DC-DC Converters

Product Specifications

Product Parameters

AEC Qualified No
Compliance (Only Automotive(Q) supports PPAP) Standard
Polarity N
ESD Diodes (Y|N) Yes
|VDS| (V) 60 V
|VGS| (±V) 20 ±V
|IDS| @TA = +25°C (A) 11.4 A
PD @TA = +25°C (W) 2.1 W
RDS(ON)Max @ VGS(10V)(mΩ) 11 mΩ
RDS(ON)Max @ VGS(4.5V)(mΩ) 14.5 mΩ
|VGS(TH)| Max (V) 2.5 V
QG Typ @ |VGS| = 4.5V (nC) 11.8 nC
QG Typ @ |VGS| = 10V (nC) 22.2 nC
CISS Typ (pF) 1072 pF
CISS Condition @|VDS| (V) 30 V

Related Content

Packages

Applications

Technical Documents

SPICE Model

Recommended Soldering Techniques

TN1.pdf

RoHS CofC

FAQs

Related Application FAQs