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DMT6010LSS

N-CHANNEL ENHANCEMENT MODE MOSFET

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Description

This new generation N-Channel Enhancement Mode MOSFET is designed to minimize RDS(ON), yet maintain superior switching performance. This device is ideal for use in notebook battery power management and loadswitch.

Feature(s)

  • 100% Unclamped Inductive Switch (UIS) Test in Production
  • High Conversion Efficiency
  • Low RDS(ON) – Minimizes On-State Losses
  • Low Input Capacitance
  • Fast Switching Speed

Application(s)

  • Backlighting
  • Power Management Functions
  • DC-DC Converters

Product Specifications

Product Parameters

AEC Qualified Yes
Compliance (Only Automotive(Q) supports PPAP) Standard
Polarity N
ESD Diodes (Y|N) No
|VDS| (V) 60 V
|VGS| (±V) 20 ±V
|IDS| @TA = +25°C (A) 14 A
PD @TA = +25°C (W) 2 W
RDS(ON)Max @ VGS(10V)(mΩ) 8 mΩ
RDS(ON)Max @ VGS(4.5V)(mΩ) 12 mΩ
|VGS(TH)| Max (V) 2 V
QG Typ @ |VGS| = 4.5V (nC) 19.3 nC
QG Typ @ |VGS| = 10V (nC) 41.3 nC
CISS Typ (pF) 2090 pF
CISS Condition @|VDS| (V) 30 V

Related Content

Packages

Technical Documents

SPICE Model

Recommended Soldering Techniques

TN1.pdf

Product Change Notices (PCNs)

A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.

PCN # Issue Date Implementation Date Subject
PCN-2495 2021-03-31 2021-07-01 Qualification of Additional Assembly & Test Sites and Additional Wafer Back Grinding and Back Metal Process
Source for Select Discrete Products