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Symmetric Dual N-Channel MOSFET

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This MOSFET has been designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high efficiency power management applications.


  • Low On-Resistance
  • Low Input Capacitance
  • Fast Switching Speed
  • Low Input/Output Leakage
  • Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
  • Halogen and Antimony Free. “Green” Device (Note 3)
  • For automotive applications requiring specific change control (i.e. parts qualified to AEC-Q100/101/104/200, PPAP capable, and manufactured in IATF 16949 certified facilities), please contact us or your local Diodes representative. https://www.diodes.com/quality/product-definitions/


  • Power management functions

Product Specifications

Product Parameters

AEC Qualified No
Compliance (Only Automotive(Q) supports PPAP) Standard
Polarity N+N
ESD Diodes (Y|N) No
|VDS| (V) 30 V
|VGS| (±V) 16,12 ±V
|IDS| @TA = +25°C (A) 21 A
|IDS| @TC = +25°C (A) 47 A
PD @TA = +25°C (W) 1.10 W
RDS(ON)Max @ VGS(10V)(mΩ) 2.5, 2.9 mΩ
RDS(ON)Max @ VGS(4.5V)(mΩ) 3.2, 3.6 mΩ
|VGS(TH)| Min (V) 1 V
|VGS(TH)| Max (V) 2.20 V
QG Typ @ |VGS| = 4.5V (nC) 15.6, 15.1 nC
QG Typ @ |VGS| = 10V (nC) 31.7, 32 nC
CISS Typ (pF) 2101, 2106 pF
CISS Condition @|VDS| (V) 15 V

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