Image shown is for reference only. Actual package may vary. Refer to the product data sheet for package details.
100V N-CHANNEL ENHANCEMENT MODE MOSFET
Log in or register to manage email notifications about changes to datasheets or PCNs for this part.
This new generation MOSFET is designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.
|Compliance (Only Automotive(Q) supports PPAP)||Standard|
|ESD Diodes (Y|N)||No|
||VDS| (V)||100 V|
||VGS| (±V)||20 ±V|
||IDS| @TA = +25°C (A)||4 A|
|PD @TA = +25°C (W)||1.8 W|
|RDS(ON)Max @ VGS(10V)(mΩ)||62 mΩ|
|RDS(ON)Max @ VGS(4.5V)(mΩ)||110 mΩ|
||VGS(TH)| Max (V)||3 V|
|QG Typ @ |VGS| = 4.5V (nC)||2.5 nC|
|QG Typ @ |VGS| = 10V (nC)||4.5 nC|
|CISS Typ (pF)||266 pF|
|CISS Condition @|VDS| (V)||50 V|
A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.
|PCN #||Issue Date||Implementation Date||Subject|
|PCN-2425||2019-10-04||2020-01-04||Qualification of Additional Wafer Solderable Front Metal Plating, Back Grinding and Back Metal Process Source, and
Additional Wafer Source for Select Products.