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DMT10H014LSS

100V N-CHANNEL ENHANCEMENT MODE MOSFET

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Description

This new generation N-Channel Enhancement Mode MOSFET is designed to minimize RDS(ON), yet maintain superior swtching performance. This device is ideal for use in notebook battery power management and loadswitch.

Feature(s)

  • 100% Unclamped Inductive Switch (UIS) Test in Production
  • High Conversion Efficiency
  • Low RDS(ON) – Minimizes On-State Losses
  • Low Input Capacitance
  • Fast Switching Speed

Application(s)

  • Backlighting
  • Power Management Functions
  • DC-DC Converters

Product Specifications

Product Parameters

AEC Qualified Yes
Compliance (Only Automotive(Q) supports PPAP) Standard
Polarity N
ESD Diodes (Y|N) No
|VDS| (V) 100 V
|VGS| (±V) 20 ±V
|IDS| @TA = +25°C (A) 8.9 A
PD @TA = +25°C (W) 1.67 W
RDS(ON)Max @ VGS(10V)(mΩ) 14 mΩ
RDS(ON)Max @ VGS(4.5V)(mΩ) 25 mΩ
|VGS(TH)| Max (V) 3 V
QG Typ @ |VGS| = 10V (nC) 33.3 nC
CISS Typ (pF) 1871 pF
CISS Condition @|VDS| (V) 50 V

Related Content

Packages

Applications

Technical Documents

SPICE Model

Recommended Soldering Techniques

TN1.pdf

Product Change Notices (PCNs)

A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.

PCN # Issue Date Implementation Date Subject
PCN-2495 2021-03-31 2021-07-01 Qualification of Additional Assembly & Test Sites and Additional Wafer Back Grinding and Back Metal Process
Source for Select Discrete Products
PCN-2403 2019-03-25 2019-06-19 Qualification of Additional Wafer Solderable Front Metal Plating, Back Grinding and Back Metal Process Source, Additional Wafer Source, or Additional Assembly and Test site for Select Products.

FAQs

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