Image shown is for reference only. Actual package may vary. Refer to the product data sheet for package details.
40V 175°C P-CHANNEL ENHANCEMENT MODE MOSFET
Log in or register to manage email notifications about changes to datasheets or PCNs for this part.
This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high-efficiency power management applications.
|Compliance (Only Automotive(Q) supports PPAP)||Standard|
|ESD Diodes (Y|N)||No|
||VDS| (V)||40 V|
||VGS| (±V)||20 ±V|
||IDS| @TC = +25°C (A)||50 A|
|PD @TA = +25°C (W)||3.6 W|
|RDS(ON)Max @ VGS(10V)(mΩ)||26 mΩ|
||VGS(TH)| Max (V)||3 V|
|QG Typ @ |VGS| = 10V (nC)||18.7 nC|
|CISS Typ (pF)||1091 pF|
|CISS Condition @|VDS| (V)||20 V|
A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.
|PCN #||Issue Date||Implementation Date||Subject|
|PCN-2425||2019-10-04||2020-01-04||Qualification of Additional Wafer Solderable Front Metal Plating, Back Grinding and Back Metal Process Source, and
Additional Wafer Source for Select Products.