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NRND = Not Recommended for New Design
175°C P-CHANNEL ENHANCEMENT MODE MOSFET
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This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.
|Compliance (Only Automotive supports PPAP)||Standard|
|CISS Condition @|VDS| (V)||20|
|CISS Typ (pF)||4234|
|Compliance (Only Automotive(Q) supports PPAP)||Standard|
|ESD Diodes (Y|N)||No|
||IDS| @TA = +25°C (A)||14|
|PD @TA = +25°C (W)||3.3|
|QG Typ@ VGS = -10V||91|
|QG Typ@ VGS = -4.5V (nC)||42.7|
|QG Typ @ |VGS| = 10V (nC)||91|
|QG Typ @ |VGS| = 4.5V (nC)||42.7|
|RDS(ON)Max @ VGS(10V)(mΩ)||11|
|RDS(ON)Max @ VGS(4.5V)(mΩ)||15|
||VGS(TH)| Max (V)||2.5|