Image shown is for reference only. Actual package may vary. Refer to the product data sheet for package details.
P-CHANNEL ENHANCEMENT MODE MOSFET
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This MOSFET has been designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.
|Compliance (Only Automotive(Q) supports PPAP)||Standard|
|ESD Diodes (Y|N)||No|
||VDS| (V)||40 V|
||VGS| (±V)||20 ±V|
||IDS| @TA = +25°C (A)||7.2 A|
|PD @TA = +25°C (W)||4.18 W|
|RDS(ON)Max @ VGS(10V)(mΩ)||51 mΩ|
|RDS(ON)Max @ VGS(4.5V)(mΩ)||85 mΩ|
||VGS(TH)| Max (V)||3 V|
|QG Typ @ |VGS| = 4.5V (nC)||7 nC|
|QG Typ @ |VGS| = 10V (nC)||14 nC|
|CISS Typ (pF)||674 pF|